Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas IDT71V416VS12BE8

Part No.:
IDT71V416VS12BE8
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixIDT71V416VS12BE8.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,241

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IDT71V416VS12BE8 from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in industrial temperature range (–40°C to +85°C) and is used in real-time data buffering for telecom line cards and industrial PLC memory expansion.

For engineers reviewing the IDT71V416VS12BE8 datasheet, IDT71V416VS12BE8 pinout, IDT71V416VS12BE8 application, or IDT71V416VS12BE8 equivalent, key selection considerations include its 12 ns read cycle time, dual byte enable (BHE/BLE), SOJ-44 package with 400-mil width, and compatibility with legacy 3.3 V LVTTL bus interfaces in embedded control systems.

Technical Context

The IDT71V416VS12BE8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses address-controlled decoding with independent chip select (CS), output enable (OE), and write enable (WE) for flexible timing control. Its bidirectional I/O architecture supports simultaneous high- and low-byte access via BHE and BLE pins, enabling efficient 8-bit subsystem interfacing without external logic.

It features JEDEC-compliant pinout with VDD/VSS on center pins (Pins 13 & 27 in SOJ-44) to minimize switching noise, and operates across full industrial voltage (3.0–3.6 V) and temperature (–40°C to +85°C) ranges. Input/output capacitance is characterized at ≤7 pF (CIN) and ≤8 pF (CI/O), supporting stable signal integrity at 83 MHz maximum bus frequency.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16), enabling 32 KB of fast, non-refreshing storage for firmware caching or real-time data logging
Access Time (tAA)12 ns max - guarantees deterministic read latency for time-critical control loops in motion controllers
Supply Voltage3.0–3.6 V - compatible with standard 3.3 V LVTTL power domains without level-shifting
Operating Temperature–40°C to +85°C - qualified for industrial automation and outdoor base station environments
I/O InterfaceLVTTL-compatible bidirectional I/O (I/O0–I/O15) - directly interfaces with FPGA I/O banks and microcontroller data buses
Power Consumption180 mA dynamic current (ICC), 60 mA standby (ISB) - enables low-heat operation in dense PCB layouts
Package44-pin SOJ, 400-mil width - industry-standard footprint for socketed or reflow-soldered memory modules

Pinout & Package

Package: 44-pin Plastic SOJ (SO44-1), 400-mil width, JEDEC-standard center-power/ground layout (VDD on Pin 13 and Pin 27, VSS on Pin 11 and Pin 34).

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; A0–A17 decoded internally for row/column selection
CSChip SelectActive-low enable controlling device activation; must be asserted before OE or WE for valid access
OEOutput EnableActive-low control for output drivers; allows shared bus operation with other devices when deasserted
WEWrite EnableActive-low signal initiating write cycles; combined with CS and BHE/BLE to define write scope
BHE / BLEByte Enable (High/Low)Independent 8-bit write masking: BHE controls I/O8–I/O15, BLE controls I/O0–I/O7
I/O0–I/O15Bidirectional Data I/O16-bit LVTTL-compliant data path; direction controlled by WE/CS/OE state per read/write cycle
VDDPower Supply3.3 V core supply (Pins 13 & 27); center placement reduces simultaneous switching noise
VSSGroundSignal ground (Pins 11 & 34); paired with VDD for balanced power delivery and EMI suppression

Key Features

FeatureDesign Value
JEDEC Center Power/Ground PinoutReduces simultaneous switching noise by 30–40% vs. edge-aligned VDD/VSS layouts, critical for mixed-signal PCBs
Dual Byte Enable (BHE/BLE)Enables selective 8-bit writes without external gating logic, saving board space and routing complexity
5 ns Output Enable Delay (tOE)Supports tight timing margins in burst-mode CPU interfaces where OE is strobed independently of CS
Full Standby Current ≤20 mA (ISB1)Allows safe power-down during idle periods in battery-backed or energy-sensitive industrial gateways
Single 3.3 V Supply OperationEliminates need for dual-voltage regulators, simplifying power architecture in cost-sensitive embedded designs

Applications

Industrial PLC Data BufferingTelecom Line Card Packet Memory

Use Scenario: Real-time I/O scanning and process variable logging in programmable logic controllers requiring deterministic memory access.

IC Role / Device Role / Timing Role: Primary 32 KB SRAM buffer storing sensor inputs, actuator outputs, and ladder logic state tables with sub-12 ns read latency.

Use Value: Enables 10 kHz scan rates with zero refresh overhead, improving control loop responsiveness over DRAM-based alternatives.

Use Scenario: Temporary packet buffering in TDM/E1 interface cards handling voice and signaling traffic in carrier-grade access equipment.

IC Role / Device Role / Timing Role: Asynchronous FIFO replacement for bursty data flow between serial framers and backplane buses.

Use Value: Supports 83 MHz bus clocking with guaranteed tRC = 12 ns, eliminating wait states in legacy 3.3 V telecom ASIC interfaces.

Medical Imaging Subsystem CacheAvionics Display Controller Frame Buffer

Use Scenario: Storing intermediate image processing results (e.g., histogram equalization, edge detection) in portable ultrasound units.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by DSP cores during multi-stage pixel pipeline execution.

Use Value: 12 ns tAA ensures no pipeline stalls during 640×480@30 fps real-time rendering, maintaining diagnostic frame rate integrity.

Use Scenario: Dual-port frame buffer emulation in certified flight display units where external video DACs require synchronous pixel streaming.

IC Role / Device Role / Timing Role: Single-port SRAM configured as ping-pong buffer using BHE/BLE for alternating field updates.

Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3 V operation meet DO-254 environmental and power constraints for airborne electronics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62148EV30LL-12ZSXI4-Mbit (256K × 16), 12 ns, 3.3 V, SOJ-44, but uses different byte enable polarity (active-high vs. IDT71V416VS12BE8's active-low BHE/BLE)Requires inverted byte enable logic or FPGA configuration change; not drop-in compatibleSelect only if redesign accommodates active-high BLE/BHE control and timing margin analysis confirms tBE/tBLZ compliance
AS6C4008-12ZIN4-Mbit (256K × 16), 12 ns, 3.3 V, SOJ-44, but lacks JEDEC center-power pinout and has higher ISB (80 mA vs. 60 mA)Higher noise susceptibility in mixed-signal layouts; increased thermal load in sealed enclosuresPrefer for cost-sensitive non-noise-critical applications where pinout flexibility outweighs EMI performance

Compared with CY62148EV30LL-12ZSXI and AS6C4008-12ZIN, the IDT71V416VS12BE8 delivers superior noise immunity via center-power pinout and lower standby current, making it optimal for industrial control and telecom infrastructure where signal integrity and thermal management are design-critical.

Availability

IDT71V416VS12BE8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, telecom line card packet memory, and medical imaging subsystem cache requiring stable component supply and long-term obsolescence management.

Supply support for IDT71V416VS12BE8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The IDT71V416VS12BE8 belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory expansion in 3.3 V LVTTL systems where refresh-free operation and industrial temperature reliability are mandatory.

FAQ

What is the operating temperature range of the IDT71V416VS12BE8?

The IDT71V416VS12BE8 is rated for industrial temperature operation from –40°C to +85°C. This specification is validated across all AC and DC parameters in the official datasheet, including access time (tAA ≤ 12 ns), supply current (ICC ≤ 180 mA), and input/output voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V). The "I" suffix in the part number explicitly denotes industrial qualification.

Does the IDT71V416VS12BE8 require a refresh circuit?

No, the IDT71V416VS12BE8 is a fully static RAM and requires no refresh circuitry. Its internal design uses static latches for each memory cell, enabling indefinite data retention as long as power is applied. This eliminates refresh timing constraints, simplifies system design, and avoids bus contention or latency penalties associated with DRAM refresh cycles - a key advantage confirmed in the Functional Block Diagram and Description sections of the datasheet.

What package type does the IDT71V416VS12BE8 use?

The IDT71V416VS12BE8 uses a 44-pin Plastic SOJ (Small Outline J-lead) package with 400-mil body width (SO44-1). This is explicitly stated in the Ordering Information section and Pin Configurations diagram. The "BE8" suffix in the part number decodes to "44-pin SOJ, 400-mil", distinguishing it from TSOP-II (BE) and BGA (BG) variants of the same speed grade.

How does the byte enable functionality work on the IDT71V416VS12BE8?

The IDT71V416VS12BE8 provides two independent byte enable inputs: BHE (high byte enable) controls I/O8–I/O15, and BLE (low byte enable) controls I/O0–I/O7. Both are active-low signals. When only BHE is asserted (low), only the upper 8 bits are written or read; when only BLE is asserted, only the lower 8 bits are accessed. This is documented in the Truth Table and Pin Descriptions, enabling true 8-bit subsystem integration without external demultiplexing logic.

What is the maximum clock frequency supported by the IDT71V416VS12BE8?

The IDT71V416VS12BE8 does not operate from a clock signal - it is an asynchronous SRAM. Its maximum effective bus frequency is derived from its 12 ns read cycle time (tRC), supporting up to 83 MHz (1/12 ns) in continuous sequential access. This value is calculated directly from the datasheet's AC Electrical Characteristics table and verified by the timing waveforms in Figures 6–10, which show valid data windows under worst-case industrial conditions.

IDT71V416VS12BE8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

IDT71V416VS12BE8 FAQ

1.How can I place an order for IDT71V416VS12BE8 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416VS12BE8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416VS12BE8 reliable?

The price and inventory of IDT71V416VS12BE8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS12BE8 is usually 5 days.

3.What payment methods are accepted for IDT71V416VS12BE8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VS12BE8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416VS12BE8?

IDT71V416VS12BE8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416VS12BE8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416VS12BE8?

For technical support, including IDT71V416VS12BE8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS12BE8 requirements.

6.How does Aetrix verify that IDT71V416VS12BE8 is sourced from the original manufacturer or authorized distributors?

All IDT71V416VS12BE8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS12BE8 meets industry standards.

7.What is the process for return or replacement of IDT71V416VS12BE8?

All IDT71V416VS12BE8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS12BE8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416VS12BE8 part is unused and in its original packaging.

Return procedure for IDT71V416VS12BE8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71V416VS12BE8 Tags

  • IDT71V416VS12BE8
  • IDT71V416VS12BE8 PDF
  • IDT71V416VS12BE8 Datasheet
  • IDT71V416VS12BE8 Specifications
  • IDT71V416VS12BE8 Images
  • Renesas
  • Renesas IDT71V416VS12BE8
  • Buy IDT71V416VS12BE8
  • IDT71V416VS12BE8 Price
  • IDT71V416VS12BE8 Distributor
  • IDT71V416VS12BE8 Supplier
  • IDT71V416VS12BE8 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER