Renesas IDT71V416VS12BEI8

Overview

IDT71V416VS12BEI8 from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V CMOS static RAM with 12 ns access time, JEDEC-compliant center power/ground pinout, and LVTTL-compatible bidirectional I/O. It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and operates across –40°C to +85°C industrial temperature range in a 44-pin SOJ package.

For engineers reviewing the IDT71V416VS12BEI8 datasheet, IDT71V416VS12BEI8 pinout, IDT71V416VS12BEI8 application, or IDT71V416VS12BEI8 equivalent, key selection criteria include its 12 ns tAA/tRC timing, dual-byte enable architecture, low-power standby current (ISB ≤ 60 mA), and compatibility with legacy 3.3V memory bus designs requiring deterministic asynchronous operation without clocks or refresh.

Technical Context

The IDT71V416VS12BEI8 implements fully static asynchronous circuitry-no clocks, no refresh cycles-enabling deterministic timing for real-time embedded control and data buffering. Its address decoding uses row/column architecture with A0–A17 inputs, supporting 256K word addressing, while OE, CS, WE, BHE, and BLE collectively manage output enable, chip select, write strobe, and high/low byte masking.

Timing is defined by overlapping control signals: read cycle time (tRC = 12 ns) equals address access time (tAA = 12 ns), and chip select access (tACS = 12 ns) matches both. Output enable propagation (tOE = 6 ns) and byte enable response (tBE = 6 ns) ensure tight synchronization in multiplexed bus environments with shared data paths.

Key Specifications

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard outline with center power/ground pins for reduced switching noise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with CY62148EV30LL-12ZSXIT and AS6C4008-12BIN, the IDT71V416VS12BEI8 offers proven SOJ-44 mechanical reliability in vibration-prone industrial settings, though its higher ISB requires more conservative thermal design; AS6C4008-12BIN provides closest functional and packaging match for seamless replacement.

Availability

IDT71V416VS12BEI8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ECU calibration storage, and medical imaging frame buffering requiring stable component supply across extended product lifecycles.

Supply support for IDT71V416VS12BEI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The IDT71V416VS12BEI8 belongs to IDT's legacy 3.3V high-speed SRAM product line, engineered specifically for deterministic, low-latency memory access in real-time embedded systems where clockless operation and industrial temperature resilience are mandatory.

FAQ

What is the maximum operating frequency implied by the 12 ns access time of IDT71V416VS12BEI8?

The IDT71V416VS12BEI8 has a read cycle time (tRC) of 12 ns, implying a maximum sustained operation frequency of approximately 83 MHz (1 / 12 ns). This is not a clocked device, so "frequency" refers to the reciprocal of the minimum time between successive read cycles-not a clock input. The IDT71V416VS12BEI8 achieves this timing asynchronously using address and control signal edges alone, with no internal clock required.

Does IDT71V416VS12BEI8 support true 8-bit access, and how is it implemented?

Yes, the IDT71V416VS12BEI8 supports true independent 8-bit access via dedicated BHE (high byte enable) and BLE (low byte enable) pins. When only BHE is asserted (L), data transfers occur exclusively on I/O8–I/O15; when only BLE is asserted (L), transfers occur on I/O0–I/O7. This eliminates the need for external byte-lane gating or read-modify-write sequences, directly enabling efficient interfacing with 8-bit microcontrollers or peripherals sharing the same data bus.

What does the "BE" suffix in IDT71V416VS12BEI8 indicate in the ordering code?

The "BE" in IDT71V416VS12BEI8 denotes the 44-pin, 400-mil plastic SOJ package (SO44-1) per IDT's ordering nomenclature. It distinguishes this variant from the TSOP II ("PH") and BGA ("EI") versions. The full suffix "BEI8" confirms SOJ packaging, industrial temperature grade (I), and tape-and-reel packaging (8), ensuring mechanical and thermal compliance for automated SMT assembly in industrial environments.

How does the JEDEC center power/ground pinout of IDT71V416VS12BEI8 improve system noise performance?

The IDT71V416VS12BEI8 places VDD (pins 12, 33) and VSS (pins 11, 34) adjacent and centered in the SOJ package, reducing loop inductance and minimizing ground bounce during simultaneous switching of multiple I/O lines. This layout lowers peak SSN by up to 40% compared to corner-fed packages, directly improving signal integrity in dense 16-bit memory buses-especially critical in mixed-signal industrial systems where analog sensor accuracy must be preserved.

Can IDT71V416VS12BEI8 be used in place of older 5V SRAMs like the 6264 or 62256?

No, the IDT71V416VS12BEI8 is a 3.3V-only device with LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and absolute maximum ratings incompatible with 5V logic families. Direct substitution would risk damage or metastability. Interfacing requires level translation or redesign to 3.3V bus standards. The IDT71V416VS12BEI8 targets modern low-voltage systems-not retrofits for legacy 5V designs.