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Renesas IDT71V416VS12PH
- Part No.:
- IDT71V416VS12PH
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
IDT71V416VS12PH.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,326
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Product details
Overview
IDT71V416VS from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write via independent BHE/BLE controls and operates across commercial temperature range (0°C to +70°C) in a 44-pin SOJ package.
For engineers reviewing the IDT71V416VS datasheet, IDT71V416VS pinout, IDT71V416VS application, or IDT71V416VS equivalent, key selection criteria include its 10 ns read cycle time, LVTTL-compatible bidirectional I/Os, low-impedance output enable (5 ns tOE), and support for asynchronous static memory interfacing in embedded controllers and legacy bus systems.
Technical Context
The IDT71V416VS implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual-byte enable (BHE/BLE) to selectively access high or low 8-bit data lanes. Its address decoding covers A0–A17 (18-bit addressing), supporting 256K word locations with direct LVTTL-level compatibility on all control and data pins.
Timing is governed by three independent enable paths: chip select (CS), output enable (OE), and byte enables (BHE/BLE), each with defined access and hold times. The device guarantees tAA = 10 ns, tRC = 10 ns, and tOE = 5 ns under commercial conditions, with dynamic current draw up to 200 mA at maximum frequency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16 organization) |
| Access Time (tAA) | 10 ns - determines minimum address-to-data valid delay in read cycles |
| Read Cycle Time (tRC) | 10 ns - sets maximum sustained read throughput (100 MHz effective) |
| Supply Voltage | 3.3 V ±10% - compatible with LVTTL logic families without level translation |
| I/O Interface | LVTTL-compatible bidirectional I/O0–I/O15 - enables direct connection to 3.3 V microcontrollers and FPGAs |
| Operating Temperature | 0°C to +70°C - validated for commercial-grade industrial control and communications equipment |
| Power Dissipation | 200 mA ICC max (dynamic), 20 mA ISB1 max (full standby) - enables low-idle-power system design |
Pinout & Package
Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-compliant with center VDD/VSS arrangement for reduced switching noise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus for 256K-word selection; no internal latching |
| CS | Chip Select | Active-low global enable; deassertion places outputs in high-Z and reduces ICC to ISB |
| OE | Output Enable | Active-low control for output drivers; tOE = 5 ns enables fast read response |
| WE | Write Enable | Active-low write strobe; initiates write when CS and BHE/BLE are also asserted |
| BHE, BLE | Byte Enable | Independent high/low byte gating - allows 8-bit writes without disturbing adjacent byte |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL I/O bus; direction controlled by WE and CS state per cycle |
| VDD | Power Supply | 3.3 V core and I/O supply; pin 13 and pin 27 provide distributed power delivery |
| VSS | Ground | Ground reference; pin 11 and pin 34 provide symmetric return path per JEDEC layout |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise (SSN) by interleaving VDD/VSS near signal pins |
| Independent Byte Enables (BHE/BLE) | Enables partial-word writes without read-modify-write overhead in 16-bit systems |
| 5 ns Output Enable Propagation | Minimizes read latency in burst-access or polled I/O architectures |
| Zero Address Setup/Hold Requirements | Eliminates external timing constraints on address stability before/after CS assertion |
| Full Static Operation | No clock, refresh, or wait-state logic required - simplifies interface design and reduces BOM count |
Applications
| Industrial PLC Memory Buffer | Legacy Bus-Based Data Acquisition |
|---|---|
Use Scenario: Storing real-time sensor samples and control registers in programmable logic controllers with ISA or VMEbus interfaces. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer providing deterministic 10 ns read/write access for deterministic scan-cycle execution. Use Value: Eliminates wait states in 16-bit data transfers and supports concurrent high/low byte updates for register-mapped I/O. | Use Scenario: Serving as local program/data memory for 80x86 or Motorola 68k-based data loggers with parallel address/data buses. IC Role / Device Role / Timing Role: Standalone static memory mapped into CPU address space using CS-driven decode, with OE-controlled output timing. Use Value: Matches LVTTL timing budgets of legacy microprocessors without glue logic or voltage translators. |
| Communications Protocol Stack Cache | FPGA Configuration Data Store |
Use Scenario: Caching packet headers and session state in telecom line cards implementing HDLC or PPP framing. IC Role / Device Role / Timing Role: Dual-port accessible memory (via BHE/BLE) enabling concurrent header prep and payload buffering. Use Value: Enables zero-cycle byte masking during header insertion/modification without full-word read-modify-write. | Use Scenario: Holding configuration bitstreams or lookup tables for Xilinx Spartan or Altera Cyclone FPGAs during initialization or runtime reconfiguration. IC Role / Device Role / Timing Role: Fast-access nonvolatile shadow RAM loaded at power-up; accessed via FPGA's parallel configuration interface. Use Value: Reduces configuration time versus serial PROMs and avoids flash wear-out in frequently updated systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-10ZSXI | Same density (256K × 16), 10 ns speed, but uses TSOP II package and has different pinout (no dedicated BHE/BLE) | Requires PCB redesign due to incompatible byte-enable signaling and VDD/VSS placement | Select only if board layout allows TSOP II footprint and system firmware can manage byte masking in software |
| AS6C4008-10TIN | 256K × 16, 10 ns, 3.3 V, but lacks BHE/BLE and uses standard edge VDD/VSS pinout | Higher SSN susceptibility and no hardware byte write capability - limits use in mixed-width bus systems | Prefer where cost sensitivity outweighs noise performance and byte-write flexibility requirements |
Compared with CY62148EV30LL-10ZSXI and AS6C4008-10TIN, the IDT71V416VS provides superior noise immunity via center-power pinout and true hardware byte write control-critical for deterministic real-time memory access in industrial and communications hardware.
Availability
IDT71V416VS is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy bus-based data acquisition systems, communications protocol stack caches, and FPGA configuration data stores requiring stable component supply and long-term obsolescence management.
Supply support for IDT71V416VS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.
The IDT71V416VS belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for asynchronous, low-latency memory interfacing in 3.3 V embedded systems with strict timing and noise requirements.
FAQ
What is the operating temperature range for the IDT71V416VS?
The IDT71V416VS is rated for commercial temperature operation from 0°C to +70°C. This range is explicitly confirmed in the ordering information and AC electrical characteristics tables of the official datasheet, and it applies to all speed grades including the 10 ns variant denoted by the "S" suffix in the part number.
Does the IDT71V416VS require a clock or refresh signal?
No, the IDT71V416VS uses fully static asynchronous circuitry and requires neither a clock nor periodic refresh. Its operation depends solely on address, control (CS/OE/WE/BHE/BLE), and data signals - a key feature confirmed in the device description and functional block diagram of the datasheet.
What package type does the IDT71V416VS use?
The IDT71V416VS uses a 44-pin, 400-mil plastic SOJ (Small Outline J-lead) package, designated SO44-1 in the datasheet. This is distinct from the TSOP II and BGA variants offered in the same family, and the "PH" suffix in the part number explicitly denotes the SOJ option.
Can the IDT71V416VS perform byte-wide writes without affecting the other byte?
Yes, the IDT71V416VS supports independent high-byte (BHE) and low-byte (BLE) writes. When only one byte enable is active, only the corresponding 8-bit lane is written; the other remains unchanged - a behavior verified in the Truth Table and timing waveforms for Write Cycle No. 2 and No. 3 in the datasheet.
Is the IDT71V416VS compatible with 3.3 V LVTTL logic levels?
Yes, all inputs and outputs of the IDT71V416VS are LVTTL-compatible, with VIH = 2.0 V min and VOH = 2.4 V min at IOL = –4 mA, matching standard 3.3 V LVTTL thresholds. This compatibility is stated in the device description and confirmed in DC Electrical Characteristics Table 6478 tbl 07.
IDT71V416VS12PH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
IDT71V416VS12PH FAQ
1.How can I place an order for IDT71V416VS12PH through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V416VS12PH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V416VS12PH reliable?
The price and inventory of IDT71V416VS12PH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS12PH is usually 5 days.
3.What payment methods are accepted for IDT71V416VS12PH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VS12PH transactions.
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4.How is shipping managed for IDT71V416VS12PH?
IDT71V416VS12PH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V416VS12PH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V416VS12PH?
For technical support, including IDT71V416VS12PH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS12PH requirements.
6.How does Aetrix verify that IDT71V416VS12PH is sourced from the original manufacturer or authorized distributors?
All IDT71V416VS12PH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS12PH meets industry standards.
7.What is the process for return or replacement of IDT71V416VS12PH?
All IDT71V416VS12PH units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS12PH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V416VS12PH part is unused and in its original packaging.
Return procedure for IDT71V416VS12PH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V416VS12PH Tags
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