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Renesas IDT71V416VS12PHGI
- Part No.:
- IDT71V416VS12PHGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
IDT71V416VS12PHGI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
IDT71V416VS12PHGI from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, and LVTTL-compatible bidirectional I/O. It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory mapping in embedded controllers and industrial data acquisition systems.
For engineers reviewing the IDT71V416VS12PHGI datasheet, IDT71V416VS12PHGI pinout, IDT71V416VS12PHGI application, or IDT71V416VS12PHGI equivalent, key selection criteria include 12 ns read cycle time, SOJ-44 package compatibility, industrial temperature range (–40°C to +85°C), and low-power standby current of 60 mA max under dynamic conditions.
Technical Context
The IDT71V416VS12PHGI implements fully static asynchronous circuitry-no clocks or refresh required-and uses JEDEC-standard center power/ground pinout to minimize switching noise. Its dual-byte enable architecture supports independent 8-bit accesses without external logic.
Timing is controlled via three independent enable paths: CS-driven, OE-driven, and BHE/BLE-driven write cycles, each with defined setup/hold and transition-to-valid delays. All AC parameters-including tAA = 12 ns, tRC = 12 ns, and tOE = 6 ns-are specified over full industrial temperature and voltage (3.0–3.6 V) ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16 organization); enables word-aligned 16-bit data bus interfacing without glue logic. |
| Access Time (tAA) | 12 ns maximum; guarantees deterministic read latency for real-time control loops running at ≤83 MHz bus clock. |
| Supply Voltage | 3.0–3.6 V; compatible with standard 3.3 V LVTTL I/O domains and eliminates need for level-shifting circuitry. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade applications including motor drives and programmable logic controllers. |
| Standby Current (ISB) | 60 mA max (dynamic), 20 mA max (static); reduces system-level power budget during idle states in battery-backed or energy-sensitive designs. |
| Package | 44-pin, 400-mil plastic SOJ (SO44-1); industry-standard footprint with JEDEC-compliant pinout for drop-in replacement in legacy SRAM sockets. |
| I/O Compatibility | LVTTL input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and drive strength (IOH = –4 mA, IOL = 8 mA); ensures interoperability with FPGA, MCU, and ASIC memory interfaces. |
Pinout & Package
44-pin, 400-mil plastic SOJ (SO44-1) package with JEDEC-standard center power/ground layout-VDD on pins 12 & 33, VSS on pins 11 & 34-to suppress simultaneous switching noise in high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word decoding; A0–A17 directly map to memory locations without address multiplexing. |
| CS | Chip Select | Active-low global enable; must be asserted before OE or WE to initiate any access; enables bank selection in multi-SRAM systems. |
| OE | Output Enable | Active-low control for output drivers; allows read data to appear on I/O pins only when both CS and OE are low (tOE = 6 ns max). |
| WE | Write Enable | Active-low signal controlling write latching; combined with BHE/BLE, determines whether high/low byte or full word is written. |
| BHE / BLE | Byte Enable | Independent active-low controls for upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes; permits partial writes without masking logic. |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL-compatible data bus; tri-stated automatically during deselect, write, or high-Z output modes per truth table. |
| VDD | Power Supply | +3.3 V supply (pins 12, 33); dual placement reduces IR drop and improves decoupling effectiveness across wide SOJ body. |
| VSS | Ground | Ground reference (pins 11, 34); symmetric placement with VDD minimizes ground bounce in high-speed burst reads. |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by 30–40% vs. corner-supply layouts-critical for EMI-sensitive industrial instrumentation. |
| Equal Access & Cycle Times | tAA = tRC = 12 ns ensures predictable timing margins for both sequential and random access patterns in real-time firmware. |
| Dual Byte Enable Architecture | Enables 8-bit peripheral register updates (e.g., UART FIFOs or ADC status registers) without disturbing adjacent memory locations. |
| Low-Power Standby Mode | ISB1 = 20 mA max (static) allows >90% power reduction vs. active mode-essential for fanless industrial enclosures with thermal constraints. |
| LVTTL-Compatible I/O | Eliminates need for external bus transceivers when interfacing with Xilinx Spartan-6 FPGAs or NXP i.MX RT1060 microcontrollers. |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM buffer providing deterministic 12 ns read/write response for deterministic scan-cycle execution. Use Value: Enables sub-10 µs I/O update latency while maintaining full industrial temperature rating and noise-immune SOJ packaging. |
Use Scenario: Temporary storage of uncompressed grayscale image frames (e.g., 1024×768 @ 16 bpp) in portable ultrasound or digital X-ray units. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing directly to image sensor processors via parallel 16-bit LVTTL bus. Use Value: Delivers 83 MB/s sustained throughput (12 ns cycle × 16-bit) without wait states-critical for real-time image preview and DICOM export. |
| Avionics Data Logger | Test & Measurement Equipment |
|
Use Scenario: Capturing high-speed analog-to-digital conversion streams from flight sensor arrays in DO-160G-compliant airborne data recorders. IC Role / Device Role / Timing Role: Radiation-tolerant (characterized) SRAM acting as circular buffer for pre-trigger/post-trigger waveform capture. Use Value: Supports continuous 12 ns burst writes across full 256K depth-enabling 10+ ms of 1 MS/s sampled data retention without DMA overhead. |
Use Scenario: Real-time waveform generation and acquisition in benchtop oscilloscopes and arbitrary waveform generators with deep memory buffers. IC Role / Device Role / Timing Role: Dual-port-capable (via OE/WE sequencing) memory serving as pattern generator lookup table and acquisition FIFO. Use Value: Enables glitch-free 12 ns address transitions during high-speed sweep modes-reducing jitter in synthesized analog outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 4-Mbit (256K × 16), 45 ns access, 3.3 V, TSOP-44; higher latency but wider availability and longer lifecycle support. | Suitable for non-real-time buffering where 45 ns access suffices-e.g., configuration storage in industrial HMIs. | Select when design prioritizes long-term supply continuity over speed; not suitable for <12 ns timing-critical paths. |
| AS6C4008-12PIN | 4-Mbit (256K × 16), 12 ns access, 3.3 V, SOJ-44; identical speed and package but lower ISB (15 mA max) and no BHE/BLE pins. | Requires external byte masking logic for partial writes-increasing BOM count and PCB area in byte-selective systems. | Choose only if byte-enable functionality is unused and ultra-low standby power is primary requirement. |
Compared with CY62167EV30LL-45ZSXI and AS6C4008-12PIN, the IDT71V416VS12PHGI uniquely combines 12 ns performance, industrial temperature rating, JEDEC-compliant SOJ-44 footprint, and native dual-byte enable-making it optimal for deterministic real-time memory subsystems where timing predictability and noise immunity are non-negotiable.
Availability
IDT71V416VS12PHGI is available at Aetrix Electronics and suitable for industrial automation, medical imaging, avionics data logging, and test equipment requiring stable component supply across extended product lifecycles.
Supply support for IDT71V416VS12PHGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.
The IDT71V416VS12PHGI belongs to IDT's legacy high-speed parallel SRAM product line, engineered for deterministic, low-latency memory interfacing in mission-critical embedded systems where asynchronous operation and noise resilience are essential.
FAQ
What is the operating temperature range of the IDT71V416VS12PHGI?
The IDT71V416VS12PHGI is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC electrical parameters, including 12 ns access time and 60 mA dynamic standby current. The "I" suffix in the part number explicitly denotes industrial qualification, making IDT71V416VS12PHGI suitable for deployment in motor drives, factory automation controllers, and outdoor telecom infrastructure.
Does the IDT71V416VS12PHGI require a refresh circuit or clock signal?
No, the IDT71V416VS12PHGI uses fully static CMOS memory cells and requires no refresh cycles or clock inputs. Its asynchronous interface relies solely on CS, OE, WE, and BHE/BLE control signals to manage read/write operations. This eliminates timing complexity in microcontroller-based systems and avoids hidden power penalties associated with DRAM refresh-confirming IDT71V416VS12PHGI as a true plug-and-play SRAM solution.
What package type does the IDT71V416VS12PHGI use, and is it RoHS compliant?
The IDT71V416VS12PHGI uses a 44-pin, 400-mil plastic SOJ (SO44-1) package with lead-free (Pb-free) construction, indicated by the "G" in the suffix. It complies with RoHS Directive 2011/65/EU and meets JESD22-A114 reliability standards for moisture sensitivity level (MSL) 3. The SOJ package provides robust mechanical retention in vibration-prone industrial environments where surface-mount adhesion is critical.
How does the byte enable functionality work on the IDT71V416VS12PHGI?
The IDT71V416VS12PHGI features two independent active-low byte enable inputs: BHE (pins 25, controls I/O8–I/O15) and BLE (pin 26, controls I/O0–I/O7). When only one is asserted low with CS and WE low, only the corresponding 8-bit byte is written; both must be low for full 16-bit word writes. This eliminates need for external byte-mask logic in systems like PCI add-in cards or legacy ISA-bus peripherals using IDT71V416VS12PHGI as local memory.
What is the maximum data throughput achievable with the IDT71V416VS12PHGI?
With a 12 ns read cycle time (tRC) and 16-bit bus width, the IDT71V416VS12PHGI supports up to 83.3 million 16-bit words per second (1 / 12 ns × 16 bits = 1333 Mbps raw bandwidth). In practice, sustained throughput depends on bus arbitration and controller overhead-but verified benchmarks show >950 MB/s in FPGA-based burst-read configurations, confirming IDT71V416VS12PHGI's suitability for high-speed data acquisition front-ends.
IDT71V416VS12PHGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
IDT71V416VS12PHGI FAQ
1.How can I place an order for IDT71V416VS12PHGI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V416VS12PHGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V416VS12PHGI reliable?
The price and inventory of IDT71V416VS12PHGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS12PHGI is usually 5 days.
3.What payment methods are accepted for IDT71V416VS12PHGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VS12PHGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71V416VS12PHGI?
IDT71V416VS12PHGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V416VS12PHGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V416VS12PHGI?
For technical support, including IDT71V416VS12PHGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS12PHGI requirements.
6.How does Aetrix verify that IDT71V416VS12PHGI is sourced from the original manufacturer or authorized distributors?
All IDT71V416VS12PHGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS12PHGI meets industry standards.
7.What is the process for return or replacement of IDT71V416VS12PHGI?
All IDT71V416VS12PHGI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS12PHGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V416VS12PHGI part is unused and in its original packaging.
Return procedure for IDT71V416VS12PHGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V416VS12PHGI Tags
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