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Renesas IDT71V416VS15BEGI8

Part No.:
IDT71V416VS15BEGI8
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixIDT71V416VS15BEGI8.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,727

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Product details

Overview

IDT71V416VS15BEGI8 from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V CMOS static RAM with 15 ns access time, JEDEC-compliant center power/ground pinout, and LVTTL-compatible bidirectional I/O. It operates across industrial temperature range (–40°C to +85°C), supports byte-wide or full-word read/write via BHE/BLE, and targets high-speed buffering in telecom line cards and industrial controllers.

For engineers reviewing the IDT71V416VS15BEGI8 datasheet, IDT71V416VS15BEGI8 pinout, IDT71V416VS15BEGI8 application, or IDT71V416VS15BEGI8 equivalent, key selection criteria include its 15 ns tAA/tRC timing, dual-byte enable architecture, SOJ-44 package footprint, and industrial-grade reliability under sustained 3.3V operation without refresh.

Technical Context

The IDT71V416VS15BEGI8 implements fully static asynchronous logic with no clocks or refresh required. Its memory array is organized as 256K words × 16 bits, decoded via row/column address buffers driving a 4,194,304-bit core, with separate high- and low-byte write drivers and output buffers.

Control is managed through dedicated CS, OE, WE, BHE, and BLE inputs, enabling independent byte-level access and fast output disable (tOHZ = 7 ns max). All I/Os are LVTTL-compatible with VIH ≥ 2.0 V and VIL ≤ 0.8 V at VDD = 3.0–3.6 V, ensuring interoperability with 3.3V microcontrollers and FPGAs.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 256K × 16-bit (4,194,304-bit total); enables word-aligned data storage without software bit-packing.
Access Time (tAA) 15 ns max; guarantees valid data on I/O pins within 15 ns of stable address and CS/OE assertion.
Cycle Time (tRC) 15 ns max; supports consecutive read/write operations at up to 66.7 MHz sustained rate.
Supply Voltage 3.0 V to 3.6 V; compatible with standard 3.3V system rails and tolerant of ±10% regulation variation.
Operating Temperature –40°C to +85°C; qualified for industrial environments including factory automation and base station equipment.
I/O Interface LVTTL-compatible; interfaces directly with 3.3V FPGA I/O banks and microcontroller GPIOs without level shifters.
Standby Current (ISB1) 20 mA max; maintains ultra-low static power during chip deselect, critical for power-constrained embedded systems.

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard center-power/ground layout reducing simultaneous switching noise.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting full 256K-word decoding; A0–A15 select word, A16–A17 unused in 256K×16 config.
CS Chip Select Active-low enable; device enters standby (high-Z I/O, low ISB) when deasserted; tACS = 15 ns max.
OE Output Enable Active-low control for output buffer; tOE = 7 ns max ensures fast read response after address stability.
WE Write Enable Active-low write strobe; coordinates with BHE/BLE to gate write drivers; tWP = 10 ns min pulse width.
BHE, BLE Byte Enable Independent high- and low-byte controls; enable partial writes without disturbing adjacent bytes.
I/O0–I/O15 Bidirectional Data 16-bit LVTTL I/O bus; high-Z state during deselect or write cycles prevents bus contention.
VDD, VSS Power/Ground Center-placed VDD (pins 12, 33) and VSS (pins 11, 34) minimize IR drop and ground bounce in high-speed operation.

Key Features

Feature Design Value
JEDEC Center Power/Ground Pinout Reduces simultaneous switching noise by symmetrically distributing VDD/VSS pins across the SOJ body.
Dual Byte Enable (BHE/BLE) Enables selective 8-bit writes to upper or lower byte without masking logic or extra control signals.
Fully Static Operation No clocks or refresh cycles required-simplifies system design and eliminates hidden timing dependencies.
Low-Power Standby Mode ISB1 ≤ 20 mA at VDD = 3.6 V ensures minimal leakage during idle periods in battery-backed systems.
LVTTL-Compatible I/O Direct interface with 3.3V FPGAs and microcontrollers; eliminates need for external level translators.

Applications

Telecom Line Card Buffering Industrial PLC Data Logging

Use Scenario: Storing real-time packet headers and status flags in TDM switch fabric interface modules.

IC Role / Device Role / Timing Role: High-speed, non-refreshing SRAM acting as dual-port-accessible FIFO buffer between serial PHY and backplane controller.

Use Value: 15 ns tAA enables sub-cycle latency for header lookups, while BHE/BLE allows atomic update of timestamp and error counters without locking full word.

Use Scenario: Capturing sensor readings and actuator commands in programmable logic controller mainboards.

IC Role / Device Role / Timing Role: Local scratchpad memory for ladder logic execution engine, accessed asynchronously by ARM Cortex-M4 core.

Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3V-only supply ensure reliable operation in uncontrolled cabinet environments.

Medical Imaging Frame Buffer Avionics Display Controller Cache

Use Scenario: Temporary storage of compressed DICOM image tiles during GPU-assisted rendering pipeline.

IC Role / Device Role / Timing Role: Burst-capable SRAM providing deterministic read latency to graphics DMA engine.

Use Value: 15 ns tRC supports continuous 66.7 MB/s throughput-sufficient for 1080p@60fps raw pixel streaming with margin.

Use Scenario: Caching flight instrument symbology and navigation overlays in certified cockpit display units.

IC Role / Device Role / Timing Role: Safety-critical local memory holding validated GUI assets, isolated from main processor bus faults.

Use Value: SOJ-44 package offers proven long-term solder joint reliability under thermal cycling and vibration per DO-160.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-45ZSXI 512K × 16-bit, 45 ns access, 3.3V, TSOP-44; higher density but slower speed. Suitable for cost-sensitive designs where bandwidth < 22 MHz suffices and board space allows larger footprint. Select when memory depth > 256K is needed and timing budget permits 3× longer access latency.
AS6C4008-15TIN 256K × 16-bit, 15 ns access, 3.3V, SOJ-44; same organization and speed, but different manufacturer qualification. Validated for extended temperature range (–40°C to +105°C) and automotive AEC-Q100 Grade 3. Prefer for automotive infotainment head units requiring extended thermal margin and automotive qualification.

Compared with IDT71V416VS15BEGI8, CY62167EV30LL-45ZSXI trades speed for density and cost, while AS6C4008-15TIN matches timing and footprint but adds automotive qualification-making it suitable for harsher thermal environments where IDT's industrial rating may be insufficient.

Availability

IDT71V416VS15BEGI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and medical imaging systems requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.

Supply support for IDT71V416VS15BEGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications and computing markets.

IDT71V416VS15BEGI8 belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for low-latency, no-refresh memory needs in industrial and telecom equipment where deterministic timing and LVTTL compatibility are mandatory.

FAQ

What is the maximum operating frequency supported by IDT71V416VS15BEGI8?

IDT71V416VS15BEGI8 does not use a clock signal-it is an asynchronous SRAM. Its maximum effective throughput is determined by cycle time: tRC = 15 ns supports up to 66.7 million operations per second. This translates to sustained 106.7 MB/s for 16-bit word transfers, assuming ideal bus arbitration and no wait states.

Does IDT71V416VS15BEGI8 require external refresh circuitry?

No-IDT71V416VS15BEGI8 is a fully static RAM using CMOS latches for storage cells. It retains data indefinitely as long as VDD remains within 3.0–3.6 V and ambient temperature stays within –40°C to +85°C. No clocks, timers, or refresh cycles are needed, simplifying system design and eliminating hidden power spikes.

Can IDT71V416VS15BEGI8 be used with 5V-tolerant microcontrollers?

IDT71V416VS15BEGI8 has LVTTL-compatible inputs (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and outputs (VOH ≥ 2.4 V at –4 mA, VOL ≤ 0.4 V at 8 mA), all referenced to 3.3V. It is not 5V-tolerant: applying 5V to any input risks permanent damage. Interface with 5V systems requires level-shifting ICs such as TXB0108 or discrete resistor dividers.

What is the function of pin 28 on the SOJ-44 package of IDT71V416VS15BEGI8?

Pin 28 on the IDT71V416VS15BEGI8 SOJ-44 package is designated NC* (No Connect), meaning it is internally unconnected and must be left floating or tied to VSS per design preference. The datasheet explicitly states "Pin 28 can either be a NC or connected to Vss"-no functional impact results from either choice.

How does the byte enable architecture of IDT71V416VS15BEGI8 improve system efficiency?

IDT71V416VS15BEGI8 uses separate BHE (high byte) and BLE (low byte) inputs to gate write drivers independently. This allows 8-bit writes to either byte lane without reading-modify-write sequences or masking logic-reducing bus traffic, CPU overhead, and power consumption in mixed-data-width applications like protocol stack processing or register-mapped peripherals.

IDT71V416VS15BEGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

IDT71V416VS15BEGI8 FAQ

1.How can I place an order for IDT71V416VS15BEGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416VS15BEGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416VS15BEGI8 reliable?

The price and inventory of IDT71V416VS15BEGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS15BEGI8 is usually 5 days.

3.What payment methods are accepted for IDT71V416VS15BEGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VS15BEGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416VS15BEGI8?

IDT71V416VS15BEGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416VS15BEGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416VS15BEGI8?

For technical support, including IDT71V416VS15BEGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS15BEGI8 requirements.

6.How does Aetrix verify that IDT71V416VS15BEGI8 is sourced from the original manufacturer or authorized distributors?

All IDT71V416VS15BEGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS15BEGI8 meets industry standards.

7.What is the process for return or replacement of IDT71V416VS15BEGI8?

All IDT71V416VS15BEGI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS15BEGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416VS15BEGI8 part is unused and in its original packaging.

Return procedure for IDT71V416VS15BEGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71V416VS15BEGI8 Tags

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