Renesas IDT71V416VS15Y8
- Part No.:
- IDT71V416VS15Y8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
IDT71V416VS15Y8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT71V416VS15Y8 from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V CMOS static RAM with 15 ns access time, JEDEC-compliant center power/ground pinout, and LVTTL-compatible bidirectional I/O. It operates across industrial temperature range (–40°C to +85°C), supports byte-wide or full-word read/write via BHE/BLE, and targets high-speed buffering in telecom line cards and industrial controllers.
For engineers reviewing the IDT71V416VS15Y8 datasheet, IDT71V416VS15Y8 pinout, IDT71V416VS15Y8 application, or IDT71V416VS15Y8 equivalent, key selection criteria include its 15 ns tAA/tRC timing, SOJ-44 package with VDD/VSS symmetry, low-power standby current (ISB1 ≤ 20 mA), and dual-byte enable architecture for x8/x16 bus flexibility.
Technical Context
The IDT71V416VS15Y8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses dedicated OE, CS, WE, BHE, and BLE control inputs to manage output enable, chip select, write strobe, and high/low byte selection independently. Its memory array is organized as 262,144 words × 16 bits with address lines A0–A17.
All I/Os are LVTTL-compatible with VIH ≥ 2.0 V, VIL ≤ 0.8 V, VOH ≥ 2.4 V at –4 mA, and VOL ≤ 0.4 V at 8 mA. The device guarantees tCLZ ≤ 4 ns and tOE ≤ 7 ns under industrial conditions, enabling reliable interfacing with FPGA or microcontroller data buses operating up to 66 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16) - supports full 16-bit parallel data paths without external multiplexing |
| Access Time (tAA) | 15 ns max at –40°C to +85°C - ensures deterministic read latency for real-time control loops |
| Supply Voltage | 3.0 V to 3.6 V - compatible with standard 3.3V logic rails and tolerant of ±10% regulation variation |
| Standby Current (ISB1) | 20 mA max - enables low-power hold mode during processor sleep without battery drain concerns |
| I/O Capacitance | CI/O ≤ 8 pF - minimizes signal integrity degradation on high-speed PCB traces up to 100 MHz |
| Operating Temperature | –40°C to +85°C - qualified for industrial automation, base station, and transportation electronics |
| Package | 44-pin, 400-mil plastic SOJ (SO44-1) - surface-mount compatible with standard reflow profiles and IPC-7351 footprints |
Pinout & Package
44-pin plastic SOJ (SO44-1) package with JEDEC-standard center VDD/VSS arrangement for noise reduction. Pin 28 is NC or connectable to VSS per design option.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word decoding; no external address latching required |
| CS | Chip Select | Active-low global enable; must be stable before tAS to initiate valid read/write cycles |
| OE | Output Enable | Active-low control for tri-state output drivers; independent of WE, enabling read-modify-write sequences |
| WE | Write Enable | Active-low write strobe; concurrent with CS and BHE/BLE to define write boundaries |
| BHE, BLE | Byte Enable | Independent high/low byte gating; allows 8-bit sub-word writes without disturbing adjacent bytes |
| I/O0–I/O15 | Bidirectional Data | LVTTL-compatible 16-bit data bus; direction controlled by CS/OE/WE state per truth table |
| VDD, VSS | Power/Ground | Center-placed pins (Pins 12 & 25, 33 & 44) reduce simultaneous switching noise in dense layouts |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/GND Pinout | Reduces ground bounce and supply noise by symmetrically distributing VDD/VSS across package center |
| Dual Byte Enable (BHE/BLE) | Enables selective 8-bit writes to upper or lower byte without full-word read-modify-write overhead |
| 5 ns Output Enable Delay (tOE) | Supports fast burst reads in pipelined architectures where OE is toggled per word access |
| Low-Power Standby Mode (ISB1) | Draws only 20 mA max in full standby-critical for fanless industrial systems with thermal constraints |
| Asynchronous Operation | Eliminates clock tree design complexity and jitter sensitivity; compatible with any controller timing margin |
Applications
| Telecom Line Card Buffering | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: Storing packet headers and metadata in TDM-over-IP gateway line cards requiring deterministic 15 ns read latency. IC Role / Device Role / Timing Role: High-speed parallel SRAM acting as first-level packet buffer between framer ASIC and host processor bus. Use Value: 256K × 16 organization eliminates external address multiplexing; SOJ-44 footprint fits constrained card-edge space. |
Use Scenario: Capturing sensor timestamps and analog-to-digital conversion results in modular PLC backplanes with 16-bit data highways. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding runtime configuration and fault history during hot-swappable module insertion. Use Value: Industrial temperature rating (–40°C to +85°C) and ISB1 ≤ 20 mA ensure reliability in uncooled control cabinets. |
| Medical Imaging Frame Store | Avionics Display Controller Cache |
|
Use Scenario: Temporary storage of compressed ultrasound frame segments prior to JPEG encoding in portable diagnostic devices. IC Role / Device Role / Timing Role: Burst-access SRAM interfaced directly to image processing DSP with LVTTL-level signaling. Use Value: tCLZ ≤ 4 ns and tOH ≥ 4 ns guarantee clean data capture windows for 66 MHz DSP read cycles. |
Use Scenario: Caching glyph bitmaps and overlay metadata in DO-254-certified cockpit display units with strict EMI requirements. IC Role / Device Role / Timing Role: Decoupled memory subsystem isolating display controller timing from CPU bus contention. Use Value: JEDEC center VDD/VSS layout reduces radiated emissions below 150 MHz, aiding EMC compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1041DV33-15ZXC | Same density (256K × 16), 15 ns speed, but TSOP-II package only; no SOJ option | Requires PCB redesign for TSOP-II footprint; lacks SOJ-44 mechanical compatibility with IDT71V416VS15Y8 | Select when board layout already accommodates TSOP-II and JEDEC pinout alignment is not critical |
| ISSI IS61LV25616AL-15TQLI | 15 ns access, industrial temp, but uses different byte-enable logic (UB/LB vs BHE/BLE) and non-JEDEC pinout | Needs firmware adaptation for byte-enable polarity and address mapping; incompatible pin-for-pin replacement | Choose for cost-sensitive designs where timing matches but layout and software changes are acceptable |
Compared with IDT71V416VS15Y8, CY7C1041DV33-15ZXC offers identical timing but mandates TSOP-II placement, while IS61LV25616AL-15TQLI requires pinout and control logic redesign-neither is drop-in, but both satisfy core 256K×16/15ns functional requirements.
Availability
IDT71V416VS15Y8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial PLCs, and medical imaging systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IDT71V416VS15Y8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, interface, and RF solutions for communications and computing markets.
IDT71V416VS15Y8 belongs to IDT's legacy high-speed CMOS SRAM product line, engineered for deterministic low-latency data buffering in industrial and telecom equipment where asynchronous operation and JEDEC-compliant noise control are mandatory.
FAQ
What is the maximum operating frequency supported by the IDT71V416VS15Y8?
The IDT71V416VS15Y8 does not operate on a clock; it is an asynchronous SRAM. Its maximum effective throughput is determined by cycle time: tRC = 15 ns, supporting up to ~66 MHz sustained random access. This value reflects worst-case industrial temperature performance and assumes proper address setup/hold timing per datasheet AC specs.
Can the IDT71V416VS15Y8 be used with a 5V microcontroller interface?
No-the IDT71V416VS15Y8 is strictly a 3.3V-only device with absolute maximum input voltage of VDD + 0.5 V. Direct connection to 5V logic violates VIH/VIL limits and risks permanent damage. Level-shifting circuitry or a 3.3V-compatible controller is required for safe integration.
Does the IDT71V416VS15Y8 require external refresh circuitry?
No. The IDT71V416VS15Y8 is a fully static CMOS SRAM using asynchronous logic-no clocks, timers, or refresh cycles are needed. Data retention is indefinite as long as VDD remains within 3.0 V–3.6 V and ambient temperature stays within –40°C to +85°C.
What is the function of Pin 28 on the IDT71V416VS15Y8 SOJ package?
Pin 28 on the IDT71V416VS15Y8 is designated NC (No Connect) but may optionally be tied to VSS per board-level noise mitigation strategy. This flexibility is documented in the datasheet top-view diagram and does not affect internal functionality when left floating.
How does byte enable (BHE/BLE) operation work on the IDT71V416VS15Y8?
BHE controls I/O8–I/O15 (high byte); BLE controls I/O0–I/O7 (low byte). When only one is active low with CS and WE asserted, only that 8-bit subset is written. During reads, both must be low for full 16-bit output; otherwise, the disabled byte presents high-impedance. This enables true 8-bit sub-word access without read-modify-write overhead.
IDT71V416VS15Y8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
IDT71V416VS15Y8 FAQ
1.How can I place an order for IDT71V416VS15Y8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V416VS15Y8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V416VS15Y8 reliable?
The price and inventory of IDT71V416VS15Y8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS15Y8 is usually 5 days.
3.What payment methods are accepted for IDT71V416VS15Y8?
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IDT71V416VS15Y8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V416VS15Y8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V416VS15Y8?
For technical support, including IDT71V416VS15Y8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS15Y8 requirements.
6.How does Aetrix verify that IDT71V416VS15Y8 is sourced from the original manufacturer or authorized distributors?
All IDT71V416VS15Y8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS15Y8 meets industry standards.
7.What is the process for return or replacement of IDT71V416VS15Y8?
All IDT71V416VS15Y8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS15Y8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V416VS15Y8 part is unused and in its original packaging.
Return procedure for IDT71V416VS15Y8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V416VS15Y8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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