Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas IDT71V416VS15YG

Part No.:
IDT71V416VS15YG
Manufacturer:
Renesas
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixIDT71V416VS15YG.pdf
Description:
IC SRAM 4MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,318

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IDT71V416VS from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, and JEDEC-standard center power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write via independent BHE/BLE controls and operates across commercial temperature range (0°C to +70°C) in 44-pin SOJ package.

For engineers reviewing the IDT71V416VS datasheet, IDT71V416VS pinout, IDT71V416VS application, or IDT71V416VS equivalent, key selection criteria include its 10 ns read cycle time, LVTTL-compatible bidirectional I/Os, low-power standby current (max 70 mA), and support for asynchronous memory interfacing in embedded controllers and networking datapaths.

Technical Context

The IDT71V416VS implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual-byte enable (BHE/BLE) to gate high- and low-byte data paths independently. Its address decoding covers A0–A17 (18-bit addressing), supporting 256K-word depth with 16-bit data width.

Timing is controlled by three independent enables: Chip Select (CS), Output Enable (OE), and Write Enable (WE), each with defined setup/hold and transition-to-valid delays. All inputs and outputs are LVTTL-compatible, with VIH min = 2.0 V and VOL max = 0.4 V at 8 mA sink, ensuring interoperability with 3.3 V logic families.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16), enabling direct replacement of legacy 256K-word × 16-bit SRAM sockets
Access Time (tAA)10 ns max - determines minimum CPU wait-state insertion for zero-wait-state interface at ≤100 MHz bus clock
Supply Voltage3.0 V to 3.6 V - compatible with standard 3.3 V system rails without level-shifting
Standby Current (ISB)70 mA max - defines power budget during idle cycles in battery-backed or low-duty-cycle systems
Input Capacitance7 pF max - limits trace-length-dependent signal integrity degradation on high-speed address/data buses
Operating Temperature0°C to +70°C - validated for commercial-grade industrial control panels and telecom line cards
Package44-pin, 400-mil SOJ (SO44-1) - surface-mount compatible with standard reflow profiles and automated assembly

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard center power/ground layout (VDD/VSS on pins 12 & 33, respectively) for reduced simultaneous switching noise.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; no address multiplexing required
I/O0–I/O7Low-Byte Data I/OBidirectional 8-bit data path enabled only when BLE = L; LVTTL-compatible, 8 mA sink capability
I/O8–I/O15High-Byte Data I/OBidirectional 8-bit data path enabled only when BHE = L; matches low-byte timing and drive strength
CSChip SelectActive-low global enable; device enters standby (high-Z I/O, low ISB) when CS = H
OEOutput EnableActive-low output gating; allows read data to appear on I/Os within 5 ns of OE assertion
WEWrite EnableActive-low write control; initiates write cycle when CS and BHE/BLE are also asserted
BLELow-Byte EnableActive-low select for I/O0–I/O7; enables byte-write without disturbing high-byte contents
BHEHigh-Byte EnableActive-low select for I/O8–I/O15; enables isolated high-byte writes in mixed-endian systems
VDDPower Supply3.3 V core and I/O supply; pins 12 and 33 provide distributed decoupling points
VSSGroundSignal and power ground reference; pins 11 and 34 reduce ground bounce in high-speed transitions

Key Features

FeatureDesign Value
JEDEC Center Power/Ground PinoutReduces simultaneous switching noise by interleaving VDD/VSS between signal pins, improving signal integrity on dense PCBs
Independent Byte Enables (BHE/BLE)Enables true 8-bit sub-word writes without read-modify-write cycles, critical for efficient buffer management in UART/DMA subsystems
5 ns Output Enable PropagationMinimizes read latency in burst-access scenarios, allowing tight coupling with FPGA or ASIC memory controllers
Single 3.3 V Supply OperationEliminates need for dual-voltage regulation, simplifying power delivery and reducing BOM cost in 3.3 V-only systems
Full Static Asynchronous DesignRequires no clocks, refresh, or initialization sequence-ideal for deterministic real-time firmware execution and cold-start applications

Applications

Network Packet BufferingIndustrial PLC Data Logging

Use Scenario: Storing incoming Ethernet frame payloads in a switch fabric ASIC before classification and forwarding.

IC Role / Device Role / Timing Role: Asynchronous 16-bit wide SRAM providing zero-wait-state buffering for 100 Mbps+ line-rate traffic.

Use Value: 10 ns tAA and 5 ns tOE enable direct connection to FPGA memory interfaces without glue logic or wait-state insertion.

Use Scenario: Capturing sensor readings at 1 kHz in a programmable logic controller with deterministic scan-cycle timing.

IC Role / Device Role / Timing Role: Non-refreshing data store holding process variables and I/O image tables between scan cycles.

Use Value: Full static operation ensures data retention across power glitches and eliminates refresh-induced jitter in control loop timing.

Medical Imaging Frame StoreAvionics Display Controller Memory

Use Scenario: Holding one full 1024×768 monochrome frame (786 KB) in a portable ultrasound device's display pipeline.

IC Role / Device Role / Timing Role: High-reliability, low-noise SRAM interfaced to an ARM9-based display controller via 16-bit parallel bus.

Use Value: JEDEC center VDD/VSS pinout minimizes EMI in sensitive analog front-end environments near transducer circuits.

Use Scenario: Serving as configuration memory for a DO-254-compliant graphics processor rendering cockpit symbology.

IC Role / Device Role / Timing Role: Radiation-tolerant (by design heritage), commercial-temp SRAM storing font glyphs and overlay bitmaps.

Use Value: 44-pin SOJ package supports manual rework and conformal coating-critical for avionics repairability and environmental sealing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62148EV30LL-10ZSXISame density (256K × 16), 10 ns speed, but 48-pin TSOP-II package; higher ISB (100 µA vs 70 mA)Lower standby current suits battery-powered devices; TSOP-II footprint differs from SOJ, requiring PCB redesignSelect if board space is constrained and TSOP-II is preferred; verify thermal profile compatibility with SOJ reflow.
AS6C4008-10TIN256K × 16, 10 ns, 3.3 V, but uses 44-pin TSOP-I package; no BHE/BLE-byte writes require external logicLacks native byte-enable control; requires additional gates or FPGA logic to emulate BLE/BHE functionalityChoose only if byte-select capability is unused; otherwise, IDT71V416VS provides superior integration for mixed-width data handling.

Compared with CY62148EV30LL-10ZSXI and AS6C4008-10TIN, the IDT71V416VS delivers native byte-enable control in a proven SOJ package with lower dynamic standby current, making it optimal for cost-sensitive, high-reliability embedded systems requiring flexible memory access granularity.

Availability

IDT71V416VS is available at Aetrix Electronics and suitable for network packet buffering, industrial PLC data logging, and medical imaging frame storage requiring stable component supply and long-term obsolescence management.

Supply support for IDT71V416VS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The IDT71V416VS belongs to IDT's legacy high-speed parallel SRAM product line, designed specifically for low-latency, deterministic memory interfacing in embedded controllers, telecom infrastructure, and real-time data acquisition systems.

FAQ

What is the maximum operating frequency supported by the IDT71V416VS?

The IDT71V416VS does not operate on a clock; it is an asynchronous SRAM. Its performance is specified by timing parameters-not frequency. The 10 ns access time (tAA) and 10 ns read cycle time (tRC) allow reliable interfacing with microprocessors or FPGAs running bus clocks up to 100 MHz in zero-wait-state configurations. Actual maximum usable bus rate depends on controller timing margins and PCB layout.

Does the IDT71V416VS require a refresh circuit or periodic memory maintenance?

No, the IDT71V416VS is a fully static RAM and requires no refresh cycles, clocks, or periodic maintenance. Its CMOS latch-based memory cells retain data indefinitely as long as VDD is applied and within specification. This makes the IDT71V416VS ideal for deterministic real-time systems where refresh-induced latency or jitter is unacceptable.

Can the IDT71V416VS be used with 5 V logic interfaces?

No, the IDT71V416VS is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH min is 2.0 V-compatible only with 3.3 V logic families. Direct connection to 5 V systems risks damage and violates DC operating conditions. Level translation (e.g., TXB0108) is required for 5 V host interfaces.

What is the function of pin 28 on the IDT71V416VS SOJ package?

Pin 28 on the IDT71V416VS in the 44-pin SOJ package is designated NC* (No Connect), meaning it has no internal connection and must remain unconnected. The datasheet explicitly states "Pin 28 can either be a NC or connected to Vss"-but connecting it to VSS is optional and offers no functional benefit. Standard practice is to leave it floating or tie it to ground only if required for mechanical stability or EMI mitigation per board-level design rules.

How does the byte-enable feature (BHE/BLE) improve system efficiency in the IDT71V416VS?

The BHE and BLE pins in the IDT71V416VS enable independent 8-bit writes to high and low bytes without reading-modify-writing the full 16-bit word. This reduces bus traffic, eliminates race conditions in multi-master systems, and accelerates buffer management in UART, SPI, or DMA peripherals. For example, writing a single status byte to I/O0–I/O7 while preserving I/O8–I/O15 contents takes one cycle instead of three-directly improving throughput in IDT71V416VS-based designs.

IDT71V416VS15YG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

IDT71V416VS15YG FAQ

1.How can I place an order for IDT71V416VS15YG through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416VS15YG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416VS15YG reliable?

The price and inventory of IDT71V416VS15YG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS15YG is usually 5 days.

3.What payment methods are accepted for IDT71V416VS15YG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VS15YG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416VS15YG?

IDT71V416VS15YG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416VS15YG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416VS15YG?

For technical support, including IDT71V416VS15YG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS15YG requirements.

6.How does Aetrix verify that IDT71V416VS15YG is sourced from the original manufacturer or authorized distributors?

All IDT71V416VS15YG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS15YG meets industry standards.

7.What is the process for return or replacement of IDT71V416VS15YG?

All IDT71V416VS15YG units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS15YG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416VS15YG part is unused and in its original packaging.

Return procedure for IDT71V416VS15YG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71V416VS15YG Tags

  • IDT71V416VS15YG
  • IDT71V416VS15YG PDF
  • IDT71V416VS15YG Datasheet
  • IDT71V416VS15YG Specifications
  • IDT71V416VS15YG Images
  • Renesas
  • Renesas IDT71V416VS15YG
  • Buy IDT71V416VS15YG
  • IDT71V416VS15YG Price
  • IDT71V416VS15YG Distributor
  • IDT71V416VS15YG Supplier
  • IDT71V416VS15YG Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER