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Home > Products > Discrete Semiconductor Products > Transistors > JFETs

Infineon Technologies IJW120R070T1FKSA1

Name: IJW120R070T1FKSA1
Brand: Infineon Technologies
SKU: IJW120R070T1FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IJW120R070T1FKSA1

Manufacturer:: Infineon Technologies

Category:: JFETs

Package:: TO-247-3

Datasheet:: IJW120R070T1FKSA1.pdf

Description:: JFET PWR FIELD EFFECT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IJW120R070T1FKSA1 from Infineon is a 1200 V silicon carbide junction field-effect transistor (SiC JFET) with normally-on operation, 70 mΩ maximum R_DS(on), 92 nC typical gate charge, and PG-TO247-3 package. It delivers ultra-fast switching, low intrinsic capacitance, and monolithic fast body diode for high-efficiency solar inverters and bidirectional DC/DC converters operating up to 175 °C junction temperature.

For engineers reviewing the IJW120R070T1FKSA1 datasheet, IJW120R070T1FKSA1 pinout, IJW120R070T1FKSA1 application, or IJW120R070T1FKSA1 equivalent, key selection criteria include gate voltage window (-12 V to -15 V threshold), dV/dt ruggedness (80 V/ns), short-circuit ruggedness, reverse recovery performance of integrated body diode, and cascode vs. direct-drive gate control requirements.

Technical Context

This SiC JFET operates as a normally-on power switch requiring negative gate voltage (≤ –12 V) for turn-off and 0 V for turn-on. Its bipolar gate junction enables forward conduction above +2.5 V but mandates strict gate voltage window control between pinch-off (–12 V to –15 V) and punch-through (≈ –23 V) to avoid leakage or breakdown.

It features monolithic integration of a SiC body diode with near-zero reverse recovery (Q_rr load-current independent), enabling synchronous rectification in bidirectional topologies. Switching losses are ~10× lower than IGBTs, and conduction loss temperature coefficient is only 1.6× from 25 °C to 100 °C due to majority-carrier operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Withstands DC bus voltages up to 1200 V in HV DC/DC and solar inverter applications without derating.
R_DS(on) max	70 mΩ at 25 °C - Enables low conduction loss at 35 A continuous current; increases to 130 mΩ at 150 °C, maintaining stable thermal behavior.
Q_G, typ	92 nC - Low gate charge supports high-frequency switching (>100 kHz) with reduced driver power and EMI.
E_oss @ 800 V	38 µJ - Low output energy minimizes turn-off loss and improves hard-switching efficiency in unidirectional and bidirectional converters.
dV/dt ruggedness	80 V/ns - Tolerates rapid voltage transients during commutation without spurious turn-on, critical in high-di/dt motor drives and inverters.
T_j max	175 °C - Allows compact heatsink design and extended lifetime under sustained high-power operation in industrial environments.
I_D,pulse	114 A - Supports peak current demands in transient overload conditions without thermal runaway.

Pinout & Package

Package: PG-TO247-3 - Industry-standard through-hole power package with isolated mounting screw hole, optimized for high-current, high-voltage thermal and electrical performance in industrial power modules and discrete designs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring negative bias (–12 V to –15 V) for reliable turn-off; forward-biased above +2.5 V for accelerated turn-on.
Pin 2	Drain	High-side power terminal connected to positive DC bus; withstands 1200 V blocking and handles 114 A pulsed current.
Pin 3	Source	Power return path and reference for gate drive; forms low-inductance loop with gate for optimal dI/dt control.

Key Features

Feature	Design Value
Ultra-fast switching	Sub-100 ns turn-on/off times enabled by low Q_G (92 nC) and minimal C_iss/C_oss, supporting >100 kHz operation in resonant and hard-switched topologies.
Monolithic SiC body diode	Zero reverse recovery (Q_rr ≈ 0) and soft recovery behavior-eliminates snubber circuits and reduces EMI in freewheeling paths.
Low gate loop resistance limit	Max 5.1 Ω external gate resistor ensures safe, robust turn-off while preventing parasitic dV/dt-induced false triggering.
Short-circuit ruggedness	Withstands ≥2 µs short-circuit events at 1200 V and rated current without failure-critical for fault-tolerant UPS and traction inverters.
Wide gate voltage window	Operates reliably across –19.5 V to +2 V gate-source range, enabling flexible driver design including direct-drive with dedicated gate drivers like 1EDI30J12Cx.

Applications

Solar Inverters

Bidirectional DC/DC Converters

Use Scenario: String-level DC/AC conversion in utility-scale photovoltaic plants with 1000 V+ DC input and grid-synchronized 50/60 Hz output.

IC Role / Device Role / Timing Role: High-side switching element in three-phase NPC or T-type inverter legs, handling 35 A continuous and 114 A pulse current at 1200 V blocking.

Use Value: Enables >99% peak efficiency and 20 kHz+ switching frequency, reducing filter size and cooling volume versus IGBT-based designs.

Use Scenario: Isolated bidirectional power transfer between 800 V battery and 400 V auxiliary bus in EV fast-charging stations.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology, leveraging internal body diode for zero-voltage switching (ZVS) during reverse conduction.

Use Value: Eliminates need for external SiC SBDs, cuts component count by 2 per leg, and maintains <1% efficiency drop across full load range (0–10 kW).

High-Voltage AC/DC Power Supplies

Industrial Motor Drives

Use Scenario: Front-end PFC stage in 15 kW telecom rectifiers with universal 380–800 V DC input and 48 V output.

IC Role / Device Role / Timing Role: Boost switch in interleaved totem-pole PFC, operating at 100 kHz with synchronous rectification via channel turn-on during body diode conduction.

Use Value: Achieves >98.5% system efficiency and meets EN 61000-3-2 Class A harmonic limits without passive filtering.

Use Scenario: Inverter output stage in 30 kW HVAC compressors with field-oriented control and regenerative braking.

IC Role / Device Role / Timing Role: Phase-leg switch managing 114 A pulsed current during torque transients, using direct-drive gate control for precise dI/dt limiting.

Use Value: Reduces heatsink mass by 40% and eliminates forced-air cooling, enabling IP55-rated cabinet integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0075120K (Wolfspeed)	1200 V, 75 mΩ SiC MOSFET; normally-off, 35 V gate drive; higher Q_G (110 nC); no integrated body diode.	Requires external SiC SBD for bidirectional operation; better suited for single-ended topologies where gate simplicity outweighs body diode omission.	Select when gate driver simplicity (0/+15 V) and inherent fail-safe off-state are prioritized over integrated diode functionality.
STPSC12065D (STMicroelectronics)	1200 V, 65 mΩ SiC JFET; same normally-on architecture; 85 nC Q_G; TO-247-3 package; slightly lower R_DS(on) but no binning for V_GS(th).	Lacks V_GS(th) binning, limiting parallel reliability; identical thermal and switching specs enable drop-in replacement where bin-matching is not required.	Select for cost-sensitive designs where V_GS(th) variation tolerance exceeds ±1 V and paralleling is not planned.

Compared with C3M0075120K and STPSC12065D, IJW120R070T1FKSA1 offers superior gate-controlled turn-on speed via forward-biased gate, guaranteed V_GS(th) binning for reliable paralleling, and monolithic body diode eliminating external diode BOM and layout complexity-making it optimal for high-reliability, space-constrained bidirectional systems.

Availability

IJW120R070T1FKSA1 is available at Aetrix Electronics and suitable for solar inverters, bidirectional DC/DC converters, and high-voltage AC/DC power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial deployment.

Supply support for IJW120R070T1FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's CoolSiC™ family of silicon carbide power transistors, designed specifically for high-efficiency, high-power-density systems demanding 1200 V capability, extreme temperature resilience, and rugged switching in renewable energy and industrial automation.

FAQ

What gate driver configuration is required for IJW120R070T1FKSA1?

The IJW120R070T1FKSA1 is a normally-on SiC JFET requiring negative gate voltage (–12 V to –15 V) for turn-off and 0 V for turn-on. Direct-drive with dedicated gate drivers such as Infineon's 1EDI30J12Cx is recommended over cascode configurations to minimize switching losses and enable full controllability. Gate loop resistance must remain ≤5.1 Ω to ensure robust dV/dt immunity.

Can IJW120R070T1FKSA1 be paralleled, and what precautions apply?

Yes, but only devices from the same V_GS(th) bin (bin1, bin2, or bin3) may be paralleled to ensure matched turn-on characteristics and thermal sharing. Mixing bins causes unequal current distribution and thermal runaway. External gate resistors must be individually matched, and PCB layout must maintain symmetrical source inductance to preserve dynamic current balance.

How does the integrated body diode compare to external SiC Schottky diodes?

The monolithic SiC body diode exhibits near-identical reverse recovery performance (Q_rr ≈ 0, soft recovery) to discrete SiC Schottky diodes but has a higher forward voltage (~2.5 V at 10 A vs. ~1.5 V). For lowest loss, active channel turn-on during reverse conduction (synchronous rectification) is preferred over passive body diode conduction.

Is IJW120R070T1FKSA1 compliant with environmental standards for harsh industrial use?

Yes-it is qualified per IEC 60721-3-4 (4K4H), covering operation from –20 °C to +55 °C ambient, 4–100% relative humidity, and storage up to 175 °C junction temperature. It also meets J-STD-020 and JESD22-A103D for moisture sensitivity and high-temperature storage, making it suitable for outdoor solar and industrial motor drive enclosures.

IJW120R070T1FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Voltage - Breakdown (V(BR)GSS):: 1200 V

Drain to Source Voltage (Vdss):: 1200 V

Current - Drain (Idss) @ Vds (Vgs=0):: 3.3 µA @ 1200 V

Current Drain (Id) - Max:: 35 A

Voltage - Cutoff (VGS off) @ Id:: -

Input Capacitance (Ciss) (Max) @ Vds:: 2000pF @ 19.5V (VGS)

Resistance - RDS(On):: 70 mOhms

Power - Max:: 238 W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IJW120R070T1FKSA1 FAQ

1.How can I place an order for IJW120R070T1FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IJW120R070T1FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IJW120R070T1FKSA1 reliable?

The price and inventory of IJW120R070T1FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IJW120R070T1FKSA1 is usually 5 days.

3.What payment methods are accepted for IJW120R070T1FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IJW120R070T1FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IJW120R070T1FKSA1?

IJW120R070T1FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IJW120R070T1FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IJW120R070T1FKSA1?

For technical support, including IJW120R070T1FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IJW120R070T1FKSA1 requirements.

6.How does Aetrix verify that IJW120R070T1FKSA1 is sourced from the original manufacturer or authorized distributors?

All IJW120R070T1FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IJW120R070T1FKSA1 meets industry standards.

7.What is the process for return or replacement of IJW120R070T1FKSA1?

All IJW120R070T1FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IJW120R070T1FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IJW120R070T1FKSA1 part is unused and in its original packaging.

Return procedure for IJW120R070T1FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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