Texas Instruments INA196AIDBVTG4

Overview

INA196AIDBVTG4 from Texas Instruments is a high-voltage current shunt monitor IC designed for bidirectional sensing across precision shunt resistors in industrial and automotive power systems. It delivers 20 V/V fixed gain, supports −16 V to +80 V common-mode input voltage independent of its 2.7 V to 18 V supply, achieves ≤3.0% total output error over temperature, and operates up to 500 kHz bandwidth - enabling accurate real-time current feedback in battery chargers and motor control loops.

For engineers reviewing the INA196AIDBVTG4 datasheet, INA196AIDBVTG4 pinout, INA196AIDBVTG4 application, or INA196AIDBVTG4 equivalent, key selection criteria include its SOT-23-5 package compatibility, −40°C to +125°C extended temperature rating, 900 μA max quiescent current, and guaranteed performance under negative common-mode conditions down to −16 V - critical for high-side and low-side sensing in 48 V telecom or EV auxiliary power rails.

Technical Context

The INA196AIDBVTG4 implements a patented dual-amplifier front-end architecture: amplifier A1 activates for negative common-mode voltages (−16 V to 0 V), while A2 handles positive ranges (0 V to +80 V), ensuring seamless transition and stable operation across the full range without external biasing. Its internal current-to-voltage conversion eliminates reliance on precision resistor matching, delivering 80 dB minimum CMR at DC and >100 dB over temperature.

This device functions as a single-supply, rail-to-rail output current sense amplifier with RTI offset voltage ≤3 mV and PSR ≤100 μV/V - enabling direct interfacing with 12-bit ADCs without additional signal conditioning in closed-loop power management systems operating from 3.3 V or 5 V microcontrollers.

Key Specifications

Pinout & Package

SOT-23-5 (DBV) package: 2.90 mm × 1.60 mm body, 0.95 mm height, gull-wing leads; suitable for high-density PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar current sense amplifier applications.

Compared with INA196AIDBVR, the INA196AIDBVTG4 offers identical performance in a single-piece tray format ideal for bench validation; versus MAX4080TASA+, it delivers 3× wider negative common-mode capability and 25% lower quiescent current - making it the sole choice for automotive cold-crank and telecom negative-bus applications.

Availability

INA196AIDBVTG4 is available at Aetrix Electronics and suitable for battery management systems, industrial motor drives, and telecom power supplies requiring stable component supply with guaranteed long-term sourcing and consistent parametric performance across manufacturing lots.

Supply support for INA196AIDBVTG4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in precision signal chain and power management solutions.

The INA19x family was engineered specifically for high-accuracy, high-common-mode current sensing in harsh industrial, automotive, and telecom environments - prioritizing wide voltage range, low error, and robust thermal performance over cost-optimized consumer-grade alternatives.

FAQ

What is the maximum common-mode voltage the INA196AIDBVTG4 can handle?

The INA196AIDBVTG4 supports a common-mode input voltage range of −16 V to +80 V, independent of its supply voltage. This specification is verified per TI SBOS307G datasheet Section 7.3 and applies across the full −40°C to +125°C operating temperature range. The device maintains specified accuracy even at the extremes, making it suitable for negative-rail monitoring in telecom systems and high-side sensing in 48 V automotive architectures. No external level-shifting circuitry is required to achieve this range.

Does the INA196AIDBVTG4 require external components for basic operation?

Yes - the INA196AIDBVTG4 requires a minimum 0.1 μF ceramic bypass capacitor between V+ (Pin 4) and GND (Pin 2), placed within 2 mm of the pins. No external gain-setting resistors are needed since gain is fixed at 20 V/V. Input filtering is optional and only recommended if high-frequency noise exceeds the 500 kHz bandwidth; adding RC filters at VIN+ or VIN− introduces gain error that must be calculated per Section 8.4.1 of the SBOS307G datasheet. The INA196AIDBVTG4 operates fully functional with just the bypass cap and proper PCB layout.

Can the INA196AIDBVTG4 accurately measure current when the shunt voltage is below 20 mV?

Accuracy degrades significantly below 20 mV shunt voltage (VSENSE). Per Section 8.4.2 of the SBOS307G datasheet, output error increases substantially in Low VSENSE cases - especially when VSENSE < 20 mV and common-mode voltage is between 0 V and V+. At VSENSE = 0 mV, typical output voltage may reach 300 mV, introducing large offset errors. For reliable measurements, maintain VSENSE ≥20 mV. If low-current sensing is required, select a higher-gain variant (e.g., INA197AIDBVTG4 at 50 V/V) or increase shunt resistance while respecting power dissipation limits.

Is the INA196AIDBVTG4 pin-compatible with other devices in the INA19x family?

The INA196AIDBVTG4 uses Pinout #2 (as defined in Table 5 of SBOS307G), which differs from the INA193–INA195 series (Pinout #1). Specifically, V+ and VIN+ positions are swapped between the two pinouts. Therefore, INA196AIDBVTG4 is not pin-compatible with INA193AIDBVTG4 or INA194AIDBVTG4. However, it is pin-compatible with INA197AIDBVTG4 and INA198AIDBVTG4 - all share identical SOT-23-5 DBV pin mapping and can be substituted within the same footprint when gain and bandwidth requirements align.

What is the thermal performance of the INA196AIDBVTG4 in a standard PCB layout?

In a standard 2-layer PCB with JEDEC-standard copper pour (1 in² 2 oz Cu on top/bottom layers), the INA196AIDBVTG4 exhibits a junction-to-board thermal resistance (ψJB) of 49.0°C/W and junction-to-ambient (RθJA) of 221.7°C/W, per Section 7.4 of SBOS307G. At maximum 900 μA quiescent current and 12 V supply, power dissipation is ~10.8 mW, resulting in <2.4°C junction rise above ambient. No heatsinking is required for operation up to +125°C ambient, provided the SOT-23-5 pad is soldered to ≥1 cm² of internal or external copper plane.