Texas Instruments INA199A3DCKR

Overview

INA199A3DCKR from Texas Instruments is a bidirectional, zero-drift current-shunt monitor optimized for high-accuracy, low-power current sensing in both high-side and low-side configurations. It features a 200 V/V fixed gain, ±150 µV maximum offset voltage, –0.3 V to 26 V common-mode input range, and operates from 2.7 V to 26 V supply with ≤100 µA quiescent current. It enables 10-mV full-scale shunt measurements in notebook battery management and Qi wireless charging transmitters.

For engineers reviewing the INA199A3DCKR datasheet, INA199A3DCKR pinout, INA199A3DCKR application, or INA199A3DCKR equivalent, key selection criteria include its 200 V/V gain accuracy (±1.5% over temperature), 0.5 µV/°C offset drift, SC70-6 package footprint, and compatibility with low-voltage microcontroller ADC interfaces in space-constrained portable power systems.

Technical Context

The INA199A3DCKR implements a precision zero-drift amplifier topology with matched internal resistor networks (R3 = 5 kΩ, R4 = 1 MΩ) to achieve 200 V/V differential gain and 100 dB minimum CMRR. Its input stage operates independently of supply voltage, allowing accurate sensing at common-mode voltages up to 26 V-even when powered from as low as 2.7 V.

It uses a rail-to-rail output stage with 0.05 V headroom to V+ and 5 mV headroom to GND under 10-kΩ load, enabling direct interfacing with 3.3-V or 5-V ADCs. The device lacks an enable pin but supports shutdown via supply gating, with <25 µA input bias current above 3 V common-mode and 1-MΩ internal paths from IN+/IN– to REF/OUT for transient analysis.

Key Specifications

Pinout & Package

INA199A3DCKR is packaged in a 6-pin SC70 (2.00 mm × 1.25 mm) surface-mount package with wettable flanks, optimized for automated optical inspection and high-density PCB layouts in portable electronics.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar current-sense amplifier applications.

Compared with INA199A3DCKR, INA219BIDR adds integrated digitization at the cost of higher supply current (1.2 mA) and reduced flexibility in analog signal routing, while MAX40056AUT+T improves offset and speed but lacks TI's production-validated ESD robustness (±2-kV HBM) in portable consumer environments.

Availability

INA199A3DCKR is available at Aetrix Electronics and suitable for notebook computers, Qi-compliant wireless charging transmitters, and industrial 24-V power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for INA199A3DCKR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog and embedded processing solutions, with over 50 years of innovation in precision signal conditioning and power management ICs.

The INA199 series was designed specifically for high-accuracy, low-power current sensing in space-constrained portable and industrial systems-emphasizing zero-drift performance, wide common-mode operation, and SC70/UQFN packaging for modern PCB assembly.

FAQ

What is the maximum common-mode voltage supported by the INA199A3DCKR?

The INA199A3DCKR supports a common-mode input voltage range of –0.3 V to 26 V across its full operating temperature range of –40°C to +125°C. This specification applies specifically to the INA199A version, enabling reliable high-side sensing on 24-V industrial buses and low-side sensing on negative-ground battery systems without external level-shifting circuitry. The device maintains specified gain accuracy and offset performance throughout this range when powered from 2.7 V to 26 V.

Does the INA199A3DCKR require external resistors to set gain?

No, the INA199A3DCKR has a factory-trimmed fixed gain of 200 V/V achieved through internal laser-trimmed thin-film resistors (R3 = 5 kΩ, R4 = 1 MΩ). Unlike programmable current-sense amplifiers, it does not require external gain-setting resistors-reducing BOM count, PCB area, and potential errors from resistor tolerance or layout parasitics. This fixed-gain architecture ensures consistent performance across production units and simplifies design validation for 10-mV shunt applications.

Can the INA199A3DCKR be used for bidirectional current measurement?

Yes, the INA199A3DCKR supports true bidirectional current sensing. When the shunt voltage (V_IN+ – V_IN–) is positive, the output voltage rises above the REF pin voltage; when negative, the output falls below REF. With REF biased at mid-supply (e.g., 1.65 V on 3.3-V system), the output swings symmetrically to indicate direction and magnitude. This capability is explicitly validated in the datasheet for INA199A versions and enables battery charge/discharge state detection in portable electronics without additional signal-conditioning circuitry.

What is the recommended bypass capacitor for the INA199A3DCKR V+ pin?

Texas Instruments specifies a 0.1-µF ceramic capacitor placed within 2 mm of the V+ pin as mandatory for stable operation. This capacitor must be X7R or better dielectric, rated for ≥10 V, and mounted directly between V+ and GND with minimal trace inductance. For noisy supply environments-such as switch-mode power supply outputs-a second 1-µF tantalum or aluminum electrolytic capacitor may be added in parallel, but the 0.1-µF ceramic remains essential to suppress high-frequency PSRR degradation observed above 100 kHz in the INA199A3DCKR's electrical characteristics table.

Is the SC70-6 package of the INA199A3DCKR compatible with standard reflow profiles?

Yes, the INA199A3DCKR in SC70-6 (DCK) package is qualified for standard lead-free reflow per JEDEC J-STD-020 Rev E, with peak temperature of 260°C and time above liquidus of 60–150 seconds. Its 2.00 mm × 1.25 mm body and 0.65-mm pitch meet IPC-7351B density Level A requirements. Texas Instruments confirms no special stencil design or thermal profiling is needed beyond standard Class 3 process controls-making it suitable for high-volume SMT lines producing smartphones and wearables where board space and thermal mass are tightly constrained.