Texas Instruments INA210BIRSWT

Overview

INA210BIRSWT from Texas Instruments is a voltage-output, zero-drift current-shunt monitor optimized for bidirectional high- or low-side sensing in power management systems. It features 200 V/V fixed gain, ±35 µV max offset voltage, 14 kHz bandwidth, –0.3 V to 26 V common-mode input range, and operates from 2.7 V to 26 V supply with ≤100 µA quiescent current. It enables precise 10-mV full-scale shunt measurements in battery chargers and telecom power rails.

For engineers reviewing the INA210BIRSWT datasheet, INA210BIRSWT pinout, INA210BIRSWT application, or INA210BIRSWT equivalent, this page delivers verified specifications, validated pin functions for the RSW (10-pin UQFN) package, confirmed thermal metrics, real-world use cases in power-constrained systems, and two technically documented alternative parts with explicit functional and application-level differences.

Technical Context

The INA210BIRSWT implements a zero-drift chopper-stabilized amplifier architecture to achieve ±35 µV max input offset and 0.5 µV/°C max drift over –40°C to +125°C, enabling accurate sub-10-mV shunt voltage detection. Its differential input stage supports common-mode voltages up to 26 V independent of supply, with 105 dB min CMRR and 14 kHz small-signal bandwidth.

It uses a fixed 200 V/V gain topology with internal matched resistors (R3 = R4 = 5 kΩ), referenced to an externally supplied REF pin (0 V to V+). The device draws only 65–100 µA supply current and features rail-to-rail output swing within 50 mV of V+ and 5 mV of GND under 10-kΩ load.

Key Specifications

Pinout & Package

The INA210BIRSWT is packaged in a 10-pin Thin UQFN (RSW) with 1.80 mm × 1.40 mm body size and 0.5-mm pitch. Thermal resistance is 107.3°C/W (Junction-to-Ambient) and 18.7°C/W (Junction-to-Board), supporting compact, thermally efficient PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar current-sense amplifier applications.

Compared with INA210AIRSWT, the INA210BIRSWT offers tighter gain accuracy (±0.5% vs. ±1%) critical for calibrated current measurement, while INA213BIRSWT trades offset performance for higher bandwidth and lower gain-making it suitable for different dynamic-range requirements rather than direct replacement.

Availability

INA210BIRSWT is available at Aetrix Electronics and suitable for battery charger monitoring, telecom power shelf supervision, notebook system power rail telemetry, and industrial PLC I/O overload detection requiring stable component supply across automotive-qualified temperature ranges and long-lifecycle production programs.

Supply support for INA210BIRSWT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in precision signal conditioning and power management ICs.

The INA21x product line was designed specifically for high-accuracy, low-power current sensing in space-constrained, thermally demanding applications such as portable electronics, telecom infrastructure, and industrial control systems.

FAQ

What is the maximum common-mode voltage supported by the INA210BIRSWT?

The INA210BIRSWT supports a common-mode input voltage range of –0.3 V to 26 V across its full operating temperature range (–40°C to +125°C). This allows high-side sensing on 24-V power rails while operating from a lower 3.3-V or 5-V supply. The specification is explicitly confirmed for Version B devices in the official TI SBOS437K datasheet Section 5.5.

Does the INA210BIRSWT require external components for basic operation?

Yes - the INA210BIRSWT requires a 0.01 µF to 0.1 µF ceramic bypass capacitor between V+ and GND, placed as close as possible to the pins. A reference voltage must also be applied to the REF pin (0 V to V+); if derived from a resistive divider, it must be buffered with an op amp to preserve CMRR. These requirements are specified in TI's SBOS437K datasheet Sections 6.3.1 and 6.4.3.

What is the gain error specification for the INA210BIRSWT over temperature?

The INA210BIRSWT (Version B) has a maximum gain error of ±1% over the full temperature range (–40°C to +125°C), with a typical value of ±0.02%. Its gain drift is limited to 10 ppm/°C max, ensuring stable scaling across thermal environments. This data is directly sourced from Table 5-5 in the TI SBOS437K datasheet under "Gain Error" test conditions.

Can the INA210BIRSWT be used for bidirectional current sensing?

Yes - the INA210BIRSWT supports true bidirectional current sensing because its output voltage is defined as V_OUT = 200 × (V_IN+ – V_IN−) + V_REF. When V_REF is set to mid-supply (e.g., 1.65 V on 3.3-V rail), negative differential inputs produce outputs below V_REF, enabling direction detection. This functionality is confirmed in the "Description" and "Electrical Characteristics" sections of the SBOS437K datasheet.

What package type and pin count does the INA210BIRSWT use?

The INA210BIRSWT uses the RSW package: a 10-pin Thin UQFN with 1.80 mm × 1.40 mm body size and 0.5-mm pitch. Pin functions include V+, GND, IN+, IN−, OUT, REF, and two NC pins (1 and 7). This is explicitly documented in Figure 4-2 and Table 4-1 of the TI SBOS437K datasheet.