Texas Instruments INA211BIDCKR

Overview

INA211BIDCKR from Texas Instruments is a voltage-output, bidirectional current-shunt monitor with zero-drift architecture, designed for high-accuracy low- or high-side current sensing in power rails up to 26 V. It features a fixed gain of 500 V/V, ±35 µV maximum offset voltage (over temperature), 0.5 µV/°C max offset drift, and operates from 2.7 V to 26 V supply with only 100 µA quiescent current - enabling precise 10-mV full-scale shunt measurements in battery chargers and telecom power management.

For engineers reviewing the INA211BIDCKR datasheet, INA211BIDCKR pinout, INA211BIDCKR application, or INA211BIDCKR equivalent, this device is selected for its wide –0.1 V to 26 V common-mode range, 105 dB min CMRR, SC70-6 package compatibility, and verified performance in closed-loop current feedback and overcurrent protection circuits requiring stable gain accuracy across –40°C to +125°C.

Technical Context

The INA211BIDCKR implements a precision zero-drift chopper-stabilized amplifier topology that rejects input offset drift and maintains gain stability under thermal stress. Its differential input stage supports true bidirectional sensing with independent common-mode rejection up to 26 V - even when supply voltage is as low as 2.7 V - making it suitable for asymmetric rail monitoring in DC-DC converters and battery protection ICs.

It uses internal matched thin-film resistors for fixed 500 V/V gain, delivers 7 kHz bandwidth at 10 pF load, and provides rail-to-rail output swing (within 50 mV of V+ and 5 mV of GND) while maintaining <±1% gain error over temperature. The REF pin allows flexible output referencing, including single-ended or differential ADC interfacing with impedance cancellation techniques.

Key Specifications

Pinout & Package

INA211BIDCKR is packaged in a 6-pin SC70 (DCK) package measuring 2.00 mm × 1.25 mm, optimized for space-constrained PCB layouts in handheld and modular power systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar current-sense amplifier applications.

Compared with INA212BIDCKR and MAX4005EUT+T, INA211BIDCKR offers the optimal balance of 500× gain, ±35 µV offset, and –40°C to +125°C operation - delivering highest accuracy per millivolt of shunt drop in thermally demanding, high-reliability power systems.

Availability

INA211BIDCKR is available at Aetrix Electronics and suitable for server power supplies, USB-C PD implementations, lithium battery protection circuits, industrial 4–20 mA transmitters, and telecom DC-DC modules requiring stable component supply with guaranteed long-term sourcing.

Supply support for INA211BIDCKR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in precision amplifiers and power management ICs.

The INA21x series was developed specifically for high-accuracy, low-power current sensing in space- and energy-constrained applications - targeting battery management, server power, and industrial automation where shunt-based measurement must replace Hall-effect sensors.

FAQ

What is the maximum common-mode voltage supported by the INA211BIDCKR?

The INA211BIDCKR supports a common-mode input voltage range of –0.1 V to 26 V over its full operating temperature range (–40°C to +125°C). This allows reliable high-side sensing on 24-V industrial rails and low-side sensing near ground, independent of the 2.7–26 V supply voltage applied to V+. The specification is validated per TI's SBOS437K datasheet Section 5.5.

Does the INA211BIDCKR require external calibration for accurate current measurement?

No, the INA211BIDCKR does not require external calibration for most applications. Its zero-drift architecture ensures ±35 µV maximum offset voltage and 0.5 µV/°C max drift over temperature, enabling ≤0.35% error at 10-mV full-scale shunt voltage. Gain error remains within ±1% over –40°C to +125°C, making factory-trimmed performance sufficient for precision power monitoring in INA211BIDCKR-based designs.

Can the INA211BIDCKR be used in bidirectional current sensing applications?

Yes, the INA211BIDCKR supports true bidirectional current sensing. When current flows in opposite directions through the shunt resistor, the polarity of (V_IN+ – V_IN–) changes, causing the output voltage to swing above or below the REF voltage - enabling detection of charge vs. discharge states in battery systems. This behavior is inherent to its differential input architecture and is confirmed in the INA211BIDCKR functional description (Section 6.1).

What package type is used for the INA211BIDCKR, and what are its key mechanical dimensions?

The INA211BIDCKR uses the SC70-6 (DCK) package, with nominal body dimensions of 2.00 mm × 1.25 mm and a maximum height of 0.9 mm. This ultra-compact footprint reduces PCB area by >60% versus SOIC-8 alternatives, supporting miniaturized designs in portable electronics and dense power modules where layout space is constrained - as specified in TI's INA21x orderable addendum.

How does the REF pin function in the INA211BIDCKR, and what are its design implications?

The REF pin in the INA211BIDCKR sets the output voltage baseline: V_OUT = 500 × (V_IN+ – V_IN–) + V_REF. It can be tied to GND for single-ended output, to mid-supply for rail-splitting, or to a precision reference for differential ADC interfacing. External impedance on REF degrades CMRR, so buffering is required for resistive dividers - a key implementation detail documented in INA211BIDCKR Application Note SBOS437K Section 6.4.3.