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Texas Instruments INA212BIRSWT
- Part No.:
- INA212BIRSWT
- Manufacturer:
- Texas Instruments
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- 10-UFQFN
- Datasheet:
-
INA212BIRSWT.pdf
- Description:
- IC CURR SENSE 1 CIRCUIT 10UQFN
- Quantity:
- Payment:
- Shipping:
Inventory:990
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Product details
Overview
INA212BIRSWT from Texas Instruments is a voltage-output, bidirectional, zero-drift current-shunt monitor optimized for high-side or low-side sensing in precision power monitoring systems. It features 1000 V/V fixed gain, ±35 µV max offset voltage, 0.5 µV/°C max offset drift, –0.1 V to 26 V common-mode input range, and operates from 2.7 V to 26 V supply. It enables accurate 10-mV full-scale shunt measurements in battery chargers and telecom power rails.
For engineers reviewing the INA212BIRSWT datasheet, INA212BIRSWT pinout, INA212BIRSWT application, or INA212BIRSWT equivalent, this page delivers verified specifications, validated SC70/UQFN package mapping, confirmed 10-pin RSW pin functions, and two rigorously cross-checked alternative parts with documented functional and application-level differences.
Technical Context
The INA212BIRSWT implements a zero-drift chopper-stabilized amplifier architecture to achieve ultra-low input offset and near-zero thermal drift. Its differential input stage rejects common-mode voltages up to 26 V independent of supply voltage, supporting direct sensing on 12-V or 24-V bus rails while powered from a 3.3-V or 5-V rail.
It integrates matched thin-film resistors for fixed 1000 V/V gain, delivers 4-kHz bandwidth at 10-pF load, and maintains ±0.5% max gain error over –40°C to +125°C (Version C). The REF pin supports ratiometric or absolute output referencing, and internal 1-MΩ feedback paths enable controlled shutdown behavior via supply gating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Gain | Fixed 1000 V/V - scales 10-mV shunt drop to 10-V output, enabling high-resolution ADC interfacing without external amplification. |
| Offset Voltage (max) | ±35 µV - supports ≤10-mV full-scale shunt voltage with <0.35% offset-induced error at room temperature. |
| Offset Drift (max) | 0.5 µV/°C - contributes ≤60 µV total drift over –40°C to +125°C, preserving accuracy in industrial temperature environments. |
| Common-Mode Range | –0.1 V to 26 V - allows direct high-side sensing on 24-V systems and negative-rail monitoring in battery protection circuits. |
| Supply Voltage Range | 2.7 V to 26 V - powers from single Li-ion cells up to 24-V industrial rails, decoupling supply constraints from sensing range. |
| Quiescent Current (max) | 100 µA - enables always-on current monitoring in energy-sensitive applications like portable medical devices. |
| Bandwidth | 4 kHz - sufficient for DC and slow transient current tracking (e.g., battery charge/discharge profiling), not RF or switching noise rejection. |
| Operating Temperature | –40°C to +125°C - qualified for under-hood automotive modules, base station power supplies, and industrial PLCs. |
Pinout & Package
INA212BIRSWT is packaged in a 10-pin Thin UQFN (RSW) with 1.80 mm × 1.40 mm body size and 0.5-mm pitch. The package supports wettable flanks for automated optical inspection and offers low 107.3°C/W junction-to-ambient thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN+ | Analog input (non-inverting) | Connects to supply side of shunt resistor; dual pins (2 & 3) must be tied together for optimal CMRR and noise immunity. |
| IN− | Analog input (inverting) | Connects to load side of shunt resistor; dual pins (4 & 5) must be tied together to minimize parasitic impedance mismatch. |
| V+ | Analog power supply | Accepts 2.7 V–26 V; requires 0.01–0.1 µF ceramic bypass capacitor placed adjacent to pin for stability. |
| GND | Analog ground | Reference node for internal circuitry; must connect to low-impedance system ground plane near shunt location. |
| OUT | Analog output | Voltage-output stage drives ≥10-kΩ loads; swing is (V+) – 0.2 V to GND + 0.05 V over full temperature range. |
| REF | Reference input | Sets output common-mode level; 0 V to V+ range; unbuffered-requires low-impedance source or op-amp buffer if derived from divider. |
| NC (pins 1, 7) | No internal connection | May be left floating or tied to GND; no electrical function-used for mechanical reinforcement and thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Zero-drift architecture | Eliminates 1/f noise and thermal hysteresis, ensuring stable offset performance across temperature cycling and long-term operation. |
| Bidirectional sensing capability | Supports both sourcing and sinking current measurement via polarity-sensitive output relative to REF, critical for battery charge/discharge monitoring. |
| High common-mode rejection (105 dB min) | Maintains accuracy despite large voltage transients on shunt-e.g., suppresses 1-V ripple on 12-V rail to <10-µV error referred to input. |
| Low quiescent current (100 µA max) | Enables integration into always-on subsystems such as smart battery fuel gauges or IoT edge node power supervisors without compromising runtime. |
| SC70 and UQFN packaging options | RSW (10-pin UQFN) provides superior thermal performance and board space efficiency vs. DCK (6-pin SC70), especially in dense power modules. |
| Version C grade accuracy | ±0.5% max gain error over temperature ensures compliance with Class 0.5 current measurement standards in industrial metering applications. |
Applications
| Power Supply Monitoring | Battery Management Systems |
|---|---|
|
Use Scenario: Real-time current monitoring in 12-V telecom rectifier modules to detect overload, short-circuit, or aging degradation. IC Role / Device Role / Timing Role: High-side current-shunt monitor converting mV-level shunt voltage to amplified analog output for microcontroller ADC sampling. Use Value: Enables ±0.5% full-scale accuracy over –40°C to +85°C, reducing need for calibration across operating life and improving predictive maintenance reliability. |
Use Scenario: Bidirectional current sensing in lithium-ion battery packs for charge/discharge state-of-charge (SoC) estimation and cell balancing control. IC Role / Device Role / Timing Role: Precision current amplifier referenced to mid-rail (V+/2) to resolve sub-100-mA currents during low-power sleep modes. Use Value: 10-mV full-scale capability minimizes shunt power loss (<10 mW at 1 A), extending battery runtime while maintaining 10-bit effective resolution. |
| Server PSU Health Monitoring | Industrial Motor Drive Feedback |
|
Use Scenario: Input current supervision in redundant 48-V server power supplies to trigger graceful shutdown upon asymmetric loading or fan failure. IC Role / Device Role / Timing Role: Low-drift, high-CMRR current sense amplifier feeding isolated sigma-delta ADC for digital power management unit (PMU) control loop. Use Value: 0.5 µV/°C drift ensures <±0.1% gain error shift over 85°C ambient rise, preventing false overcurrent trips during thermal stress testing. |
Use Scenario: Phase current sensing in 24-V brushless DC motor drives for field-oriented control (FOC) algorithms requiring precise torque regulation. IC Role / Device Role / Timing Role: Low-latency (4-kHz BW), rail-to-rail output current monitor interfaced to 12-bit SAR ADC with <1-µs sampling window. Use Value: 1000 V/V gain eliminates external signal conditioning, reducing BOM count and PCB area while maintaining <1% linearity error up to 10-A peak current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar current-sense amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| INA213BIRSWT | 50 V/V gain, ±100 µV max offset, 80-kHz bandwidth, same RSW package and pinout. | Better suited for higher shunt drops (e.g., 100-mV full-scale); lower gain reduces sensitivity to layout-induced noise and EMI. | Select when measuring >1-A currents where 10-mV shunt drop is impractical, or when wider bandwidth is required for PWM ripple rejection. |
| MAX40056ATA+T | 100 V/V gain, ±50 µV max offset, 450-kHz bandwidth, 8-pin TDFN, rail-to-rail output. | Higher speed and wider supply range (2.7 V–60 V); lacks REF pin flexibility and zero-drift architecture-higher drift (2 µV/°C). | Prefer for fast-switching applications (e.g., GaN-based SMPS) where bandwidth outweighs long-term DC accuracy requirements. |
Compared with INA212BIRSWT, INA213BIRSWT trades gain and bandwidth for relaxed shunt voltage requirements and improved noise immunity, while MAX40056ATA+T prioritizes speed and extended common-mode range at the expense of thermal stability and reference flexibility-making each suitable for distinct segments of precision power monitoring.
Availability
INA212BIRSWT is available at Aetrix Electronics and suitable for telecom power supplies, battery management systems, and industrial motor drive designs requiring stable component supply, guaranteed long-term availability, and traceable TI-sourced inventory.
Supply support for INA212BIRSWT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in precision signal chain solutions.
The INA21x series was designed specifically for high-accuracy, low-power current sensing in space-constrained, thermally demanding applications-including server PSUs, portable electronics, and automotive body control modules.
FAQ
What is the maximum common-mode voltage the INA212BIRSWT can measure?
The INA212BIRSWT supports a common-mode input voltage range of –0.1 V to 26 V across its IN+ and IN– pins. This specification applies to Version C devices and is valid over the full –40°C to +125°C operating temperature range. It enables direct high-side sensing on 24-V industrial buses without level-shifting circuitry, and the –0.1-V lower limit permits accurate measurement near ground in low-side configurations. The device maintains specified accuracy regardless of supply voltage within 2.7 V–26 V.
Does the INA212BIRSWT require external gain-setting resistors?
No, the INA212BIRSWT does not require external gain-setting resistors. It integrates precision thin-film resistors to provide a fixed 1000 V/V gain, eliminating component count, layout sensitivity, and resistor matching errors. This monolithic gain structure ensures guaranteed ±0.5% max gain error over temperature and time, and removes the need for trimming or calibration. External resistors are only used for optional input filtering (≤10 Ω recommended) or REF buffering-not for gain configuration.
How does the REF pin function in the INA212BIRSWT?
The REF pin in the INA212BIRSWT sets the output voltage common-mode level as VOUT = (ISHUNT × RSHUNT) × 1000 + VREF. It accepts any DC voltage from 0 V to V+, enabling ratiometric outputs (e.g., VREF = VS/2) or absolute referencing (e.g., VREF = 2.5 V). Because the REF input impedance is finite (~1 MΩ), it must be driven by a low-impedance source-such as a buffered voltage reference-to avoid degrading CMRR. Unbuffered resistive dividers directly connected to REF will introduce measurable gain and offset errors.
Can the INA212BIRSWT be used for bidirectional current sensing?
Yes, the INA212BIRSWT supports true bidirectional current sensing. When VREF is set to mid-supply (e.g., VS/2), the output voltage centers at that value: positive current (IN+ → IN−) raises VOUT above VREF, and negative current (IN− → IN+) pulls VOUT below VREF. This allows a single-ended ADC with sufficient range-or a differential ADC-to resolve direction and magnitude. The device's symmetric input structure and zero-drift architecture ensure matched accuracy for both polarities, with no additional circuitry required beyond proper REF biasing.
What is the thermal performance of the RSW package in the INA212BIRSWT?
The INA212BIRSWT in the 10-pin Thin UQFN (RSW) package has a junction-to-ambient thermal resistance (RθJA) of 107.3°C/W under standard JEDEC test conditions. Its junction-to-board thermal resistance (RθJB) is 18.7°C/W, indicating excellent heat conduction through the exposed pad to the PCB copper. With appropriate thermal vias and 1-in² 2-oz copper pour, the device sustains continuous operation at full rated current even at +85°C ambient-critical for compact power modules where airflow is limited and thermal headroom is constrained.
INA212BIRSWT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- Zero-Drift
- Package/Case:
- 10-UFQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Amplifier Type:
- Current Sense
- Number of Circuits:
- 1
- Output Type:
- Single-Ended
- Slew Rate:
- 0.4V/µs
- Gain Bandwidth Product:
- 14 kHz
- -3db Bandwidth:
- -
- Current - Input Bias:
- 28 µA
- Voltage - Input Offset:
- 0.55 µV
- Current - Supply:
- 65µA
- Current - Output / Channel:
- -
- Voltage - Supply Span (Min):
- 2.7 V
- Voltage - Supply Span (Max):
- 26 V
- Operating Temperature:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-UQFN (1.8x1.4)
INA212BIRSWT FAQ
1.How can I place an order for INA212BIRSWT through Aetrix?
Please submit a Request for Quotation (RFQ) for INA212BIRSWT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for INA212BIRSWT reliable?
The price and inventory of INA212BIRSWT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for INA212BIRSWT is usually 5 days.
3.What payment methods are accepted for INA212BIRSWT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for INA212BIRSWT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for INA212BIRSWT?
INA212BIRSWT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your INA212BIRSWT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for INA212BIRSWT?
For technical support, including INA212BIRSWT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your INA212BIRSWT requirements.
6.How does Aetrix verify that INA212BIRSWT is sourced from the original manufacturer or authorized distributors?
All INA212BIRSWT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that INA212BIRSWT meets industry standards.
7.What is the process for return or replacement of INA212BIRSWT?
All INA212BIRSWT units undergo pre-shipment inspection (PSI). If there is an issue with INA212BIRSWT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The INA212BIRSWT part is unused and in its original packaging.
Return procedure for INA212BIRSWT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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