Texas Instruments INA213BIDCKR

Overview

INA213BIDCKR from Texas Instruments is a voltage-output, bidirectional current-shunt monitor with zero-drift architecture, designed for high-accuracy low- or high-side current sensing in power rails up to 26 V. It features a fixed gain of 50 V/V, ±100 µV maximum input offset voltage (RTI), 80 kHz bandwidth, 100 µA max quiescent current, and operates from 2.7 V to 26 V supply - enabling precise 10-mV full-scale shunt measurements in battery chargers and telecom power management.

For engineers reviewing the INA213BIDCKR datasheet, INA213BIDCKR pinout, INA213BIDCKR application, or INA213BIDCKR equivalent, this page delivers verified technical context, package-specific pin functions, real-world application mappings, and validated alternative options - all grounded in TI's SBOS437K production data sheet and orderable part documentation.

Technical Context

The INA213BIDCKR implements a zero-drift chopper-stabilized amplifier topology to achieve ±100 µV max RTI offset and 0.5 µV/°C max offset drift over –40°C to +125°C. Its differential input stage supports common-mode voltages from –0.1 V to 26 V independent of supply, enabling direct sensing on high-voltage rails while powered from low-voltage logic supplies.

It delivers 50 V/V fixed gain with ±1% max gain error over temperature (Version B), 100 dB min CMRR at DC, and rail-to-rail output swing capable of driving 10-kΩ loads. Input bias current remains below 35 µA, and internal 20-kΩ input resistors (R3/R4) define its gain-setting network per TI's simplified schematic.

Key Specifications

Pinout & Package

INA213BIDCKR is packaged in a 6-pin SC70 (DCK) package measuring 2.00 mm × 1.25 mm, optimized for space-constrained PCB layouts in portable and telecom equipment. Pin functions are validated per TI's SBOS437K Figure 4-1 and Table 4-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar current-sense amplifier applications.

Compared with INA213AIDCKR and INA214BIDCKR, the INA213BIDCKR balances cost, precision, and bandwidth - delivering optimal 50× gain and 80 kHz response for general-purpose 10–60 mV shunt applications where ±100 µV offset is sufficient.

Availability

INA213BIDCKR is available at Aetrix Electronics and suitable for battery charger monitoring, telecom power supply design, and industrial motor drive protection requiring stable component supply and long-term lifecycle support.

Supply support for INA213BIDCKR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in precision amplifiers and power management ICs.

The INA21x family was engineered for high-accuracy, low-power current sensing in space-constrained, high-common-mode applications - targeting battery management, telecom infrastructure, and industrial power systems.

FAQ

What is the maximum common-mode voltage supported by the INA213BIDCKR?

The INA213BIDCKR supports a common-mode input voltage range of –0.1 V to 26 V across its full operating temperature range (–40°C to +125°C). This specification applies specifically to Version B devices, as confirmed in TI's SBOS437K Electrical Characteristics table (Section 5.5). The device maintains functionality even when VIN+ exceeds the V+ supply rail by up to 26 V, making it suitable for high-side sensing on 24-V industrial buses while powered from a 3.3-V microcontroller rail.

Does the INA213BIDCKR have a shutdown pin?

No, the INA213BIDCKR does not include a dedicated shutdown pin. However, TI's datasheet (Section 6.4.2) confirms that external control of the V+ supply - using a logic gate or transistor switch - can effectively disable the device. In shutdown mode, input leakage paths remain (~1 MΩ from IN+ and IN− to REF and OUT), so system-level design must account for residual current flow through the shunt, especially when REF is grounded or biased.

What is the gain error specification for INA213BIDCKR over temperature?

The INA213BIDCKR (Version B) has a maximum gain error of ±1% over the full operating temperature range of –40°C to +125°C, as specified in TI's SBOS437K Section 5.5. This value is distinct from Version C (±0.5%) and Version A (±1%). Gain drift is further limited to 10 ppm/°C max, ensuring predictable scaling across thermal conditions without software compensation in most industrial applications.

Can INA213BIDCKR measure bidirectional current?

Yes, the INA213BIDCKR supports bidirectional current sensing. Its output voltage is referenced to the externally applied REF pin voltage: V_OUT = 50 × (V_IN+ – V_IN−) + V_REF. By setting REF to mid-supply (e.g., 1.65 V on 3.3-V system), positive and negative differential inputs produce outputs above and below REF - enabling unambiguous detection of charge vs. discharge current in battery systems.

What package type is used for INA213BIDCKR?

The INA213BIDCKR uses the SC70-6 (DCK) package, a surface-mount plastic package measuring 2.00 mm × 1.25 mm with 0.65-mm lead pitch. This is explicitly confirmed in TI's SBOS437K "Device Information" table and "Pin Configurations" section (Figure 4-1). The DCK variant is distinct from the 10-pin UQFN (RSW) option offered in the INA21x family - no UQFN version exists for the INA213BIDCKR orderable part number.