Texas Instruments INA216A1RSWT

Overview

INA216A1RSWT from Texas Instruments is a unidirectional, high-side current shunt monitor IC with 25V/V fixed gain, ±30μV max input offset voltage, 13μA quiescent current, and common-mode input range of +1.8V to +5.5V - used for precision battery charge monitoring in space-constrained portable electronics.

For engineers reviewing the INA216A1RSWT datasheet, INA216A1RSWT pinout, INA216A1RSWT application, or INA216A1RSWT equivalent, this page delivers verified technical context, package-specific pin mapping, real-world use cases, and validated alternative options for low-power, high-accuracy current sensing designs.

Technical Context

The INA216A1RSWT employs zero-drift auto-zero architecture to achieve ±30μV max input offset voltage and 0.06μV/°C drift, enabling accurate sensing down to 10mV full-scale shunt drops. Its input stage operates directly from the IN+ pin (no dedicated V_CC), limiting minimum common-mode voltage to +1.8V and precluding low-side configurations.

With 20kHz bandwidth (C_L = 10pF), 90dB CMRR, and buffered rail-to-rail output swing (to within 100mV of V₊ and 1mV of GND), it supports stable DC and slow-varying current measurements in battery-powered systems without external op-amp buffering.

Key Specifications

Pinout & Package

INA216A1RSWT is packaged in a 10-pin ThinQFN (RSW) with wettable flanks, 2.0mm × 2.0mm footprint, and 0.5mm pitch - optimized for automated optical inspection and high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side current sensing applications.

Compared with INA216A1RSWT, INA215A1RSWT trades gain and offset for cost-sensitive designs, while MAX40016ATA+T offers pin-compatible SOT23 convenience at the expense of zero-drift performance and ultra-low IQ - making INA216A1RSWT optimal for battery-critical, high-precision portable systems.

Availability

INA216A1RSWT is available at Aetrix Electronics and suitable for battery fuel gauging, USB power delivery monitoring, and industrial sensor node power management requiring stable component supply across long-lifecycle portable electronics programs.

Supply support for INA216A1RSWT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with emphasis on power efficiency and signal integrity.

The INA216 series was designed specifically for ultra-low-power, high-accuracy current sensing in space-constrained battery-operated devices - emphasizing zero-drift stability, chip-scale packaging, and single-supply simplicity.

FAQ

What is the supply configuration for INA216A1RSWT?

INA216A1RSWT has no dedicated V_CC pin; it draws power directly from the IN+ pin, which serves as both high-side shunt connection and supply input. This architecture limits the minimum common-mode voltage to +1.8V and prohibits low-side sensing configurations. The device operates across +1.8V to +5.5V at the IN+ pin, consuming only 13μA typical quiescent current - making INA216A1RSWT ideal for direct integration into battery-powered rails without auxiliary regulation.

Does INA216A1RSWT require an external op-amp buffer?

No, INA216A1RSWT features a fully buffered voltage output capable of driving 10kΩ loads directly to within 100mV of V₊ and 1mV of GND. Its output impedance is 42Ω, and it delivers rail-to-rail swing without phase reversal or instability - eliminating the need for external op-amp buffering in standard MCU ADC interface applications. This integrated buffering reduces BOM count and PCB area, a key advantage of INA216A1RSWT in compact portable designs.

What is the maximum shunt voltage measurable with INA216A1RSWT?

With its 25V/V gain, INA216A1RSWT produces full-scale output at 2.5V when the differential input is 100mV. However, absolute maximum differential input is ±5.5V, and practical full-scale shunt voltage is constrained by output swing limits: at V_CM = +5.5V, output swings to (V₊) – 0.1V = +5.4V, allowing up to 216mV shunt drop (5.4V ÷ 25). For precision operation, TI specifies linear range up to 100mV - confirming INA216A1RSWT's design intent for low-drop, high-accuracy current sensing.

How does the zero-drift architecture benefit INA216A1RSWT in battery applications?

The zero-drift auto-zero architecture of INA216A1RSWT delivers ±30μV max input offset voltage and 0.06μV/°C drift, enabling reliable current measurement down to 10mV shunt drops with <0.3% error - critical for detecting low standby currents (<10mA) in battery-fueled devices. Unlike conventional amplifiers, INA216A1RSWT maintains calibration stability across –40°C to +125°C without external trimming, reducing firmware compensation overhead and improving long-term fuel gauge accuracy in smartphones and medical wearables.

Is INA216A1RSWT pin-compatible with other variants in the INA216 family?

Yes, all RSW-package variants (INA216A1RSWT, INA216A2RSWT, etc.) share identical 10-pin ThinQFN footprints and pinouts - only the gain and marking differ. This allows design reuse across current-sensing ranges: swapping INA216A1RSWT (25V/V) for INA216A2RSWT (50V/V) requires no PCB change, only firmware scaling adjustment. However, note that INA216A1RSWT is marked "SNJ" per TI's package addendum, and its obsolescence status requires proactive BOM planning - a distinction confirmed in official TI ordering documentation.