Texas Instruments INA2332AIPWT

Overview

INA2332AIPWT from Texas Instruments is a dual-channel, rail-to-rail output, low-power CMOS instrumentation amplifier in TSSOP-14 package, featuring 5 V/V internal gain (extendable to 1000 V/V via external resistors), 2.0 MHz bandwidth, 5 V/µs slew rate, and 415 µA per channel quiescent current. It operates from +2.7 V to +5.5 V single supply and supports industrial sensor signal conditioning with 73 dB DC CMRR and –55°C to +125°C temperature range.

For engineers reviewing the INA2332AIPWT datasheet, INA2332AIPWT pinout, INA2332AIPWT application, or INA2332AIPWT equivalent, this page delivers verified electrical specs, dual-channel timing behavior, shutdown control interface details, and real-world medical/industrial use cases - all grounded in TI SBOS216B production data.

Technical Context

The INA2332AIPWT implements a modified two-op-amp instrumentation architecture with integrated gain stage A3, enabling precise differential-to-single-ended conversion while maintaining high common-mode rejection up to 45 kHz. Its internal 40 kΩ RG network sets baseline G = 5, and external R1/R2 resistors allow programmable gain ≥5 V/V using G = 5 + 5(R2/R1).

Each channel features independent shutdown control (pins 1 and 14), rail-to-rail output swing within 25 mV of rails at G ≥ 10 and RL ≥ 10 kΩ, and reference pins (REFA/REFB) that define zero-output level and directly influence input common-mode range - requiring low-impedance connections to preserve >70 dB CMRR.

Key Specifications

Pinout & Package

TSSOP-14 (PW) package: 4.4 mm × 5.0 mm body, 0.65 mm pitch, exposed pad not present, JEDEC MO-153 compliant, MSL Level-2-260°C-1 year.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar instrumentation amplifier applications.

Compared with INA333AIPWR and AD8226ARMZ, the INA2332AIPWT uniquely balances dual-channel integration, micropower shutdown, and TSSOP-14 manufacturability - making it optimal for compact, battery-aware sensor fusion nodes where channel independence and thermal robustness are mandatory.

Availability

INA2332AIPWT is available at Aetrix Electronics and suitable for industrial sensor interfaces, portable medical devices, and automotive battery monitoring systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for INA2332AIPWT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with over 50 years of innovation in precision signal chain solutions.

The INA2332AIPWT belongs to TI's precision instrumentation amplifier product line, engineered specifically for low-power, wide-temperature industrial and medical sensor signal conditioning where accuracy, reliability, and small-footprint integration are critical.

FAQ

What is the maximum gain achievable with the INA2332AIPWT?

The INA2332AIPWT supports gains from 5 V/V to 1000 V/V using the external resistor equation G = 5 + 5(R2/R1). At G = 1000, bandwidth reduces to ~20 kHz (per typical gain vs frequency curves), and stability requires careful layout with feedback capacitance. The device maintains ±0.4% gain error across this full range when using 0.1% tolerance resistors with matched temperature coefficients.

Does the INA2332AIPWT support true rail-to-rail input common-mode range?

No - the INA2332AIPWT does not support rail-to-rail input common-mode range. Its lower input common-mode limit is defined by amplifier A1's output swing and depends on REF voltage; upper limit is V+ – 1.2 V. For example, at VS = 5 V, usable VCM spans 0.55 V to 3.8 V. Operation outside this range degrades CMRR and may cause saturation, as confirmed in the SBOS216B Typical Characteristics section.

How does the shutdown function behave on each channel of the INA2332AIPWT?

Each channel of the INA2332AIPWT has an independent shutdown pin: pin 1 (SDA) controls Channel A, pin 7 (SDB) controls Channel B. Pulling either pin below 0.8 V (at VS = 5 V) reduces its respective channel's quiescent current to 0.01 µA within nanoseconds. Output enters high-impedance state, and wake-up occurs in <2 µs when the pin rises above threshold - verified in SBOS216B Shutdown Transient Behavior plot.

Can the INA2332AIPWT drive an ADC directly without an output buffer?

Yes - the INA2332AIPWT can directly drive capacitive-input ADCs such as the ADS7818 (12-bit, 100 kSPS) as shown in Figure 4 of SBOS216B. Its low 100 Ω output impedance at high frequencies and 2.0 MHz bandwidth ensure <0.1% settling in <2.5 µs for 2 V steps. However, for ADCs with >100 pF input capacitance or requiring >12-bit linearity, a series 10–22 Ω resistor is recommended to isolate capacitive load and prevent peaking.

What is the purpose of the REFA and REFB pins on the INA2332AIPWT?

The REFA and REFB pins set the zero-output reference level for Channels A and B respectively. They define the DC offset of each output and directly affect the allowable input common-mode voltage range per channel. As stated in SBOS216B Applications Information, VOA2 = VREF + 5(VIN+ – VIN–), so VREF must be kept ≤ V+ – 1.2 V for proper operation. A low-impedance connection (<160 Ω) is mandatory to preserve CMRR; failure to do so degrades CMRR to 50 dB.