Texas Instruments INA350ABSIDDFR

Overview

INA350ABSIDDFR from Texas Instruments is a selectable-gain instrumentation amplifier in an 8-pin SOT-23-THN (DDF) package, offering G = 10 or G = 20 via the GS pin, 95 dB typical CMRR, 0.2 mV typical offset voltage, and 100 µA typical quiescent current - optimized for low-power bridge sensing and analog input modules in wearable health and industrial monitoring systems.

For engineers reviewing the INA350ABSIDDFR datasheet, INA350ABSIDDFR pinout, INA350ABSIDDFR application, or INA350ABSIDDFR equivalent, this page delivers verified gain-select logic thresholds, shutdown timing, thermal resistance (RθJA = 169.1°C/W), load drive capability (500 pF <20% overshoot), and precise pin-level functional roles per TI SBOSAA0C Rev C.

Technical Context

The INA350ABSIDDFR implements a three-amplifier instrumentation architecture with integrated precision matched resistors, eliminating external gain-setting components. Its gain select (GS) pin toggles between G = 10 (logic low) and G = 20 (logic high), with no-connect defaulting to G = 20.

It features rail-to-rail output swing with 15 mV headroom, reference input (REF) with 60 kΩ impedance and unity gain, and shutdown control (SHDN) enabling sub-1.25 µA quiescent current. Performance is specified across –40°C to 125°C with 1.8 V to 5.5 V single-supply operation.

Key Specifications

Pinout & Package

INA350ABSIDDFR uses the 8-pin SOT-23-THN (DDF) package, measuring 1.60 mm × 2.90 mm, with exposed thermal pad connected to V– for improved thermal performance (RθJA = 169.1°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar instrumentation amplifier applications.

Compared with INA351ABSIDDFR and AD8420ARMZ, the INA350ABSIDDFR uniquely balances selectable gain, ultra-low power, and minimal footprint - making it optimal for space-constrained, battery-operated sensor nodes where gain reconfiguration adds system-level flexibility without sacrificing efficiency.

Availability

INA350ABSIDDFR is available at Aetrix Electronics and suitable for bridge network sensing, wearable fitness monitors, and analog input modules requiring stable component supply, full traceability, and long-term industrial lifecycle support.

Supply support for INA350ABSIDDFR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets.

The INA350 product line was designed specifically for cost- and size-sensitive, low-power instrumentation applications - targeting 10-bit to 14-bit data acquisition systems in portable and battery-operated equipment.

FAQ

What gain options does the INA350ABSIDDFR support, and how are they selected?

The INA350ABSIDDFR supports two gain options: G = 10 (when GS pin is logic low) and G = 20 (when GS pin is logic high). If the GS pin is left unconnected, the device defaults to G = 20. This hardware-selectable gain eliminates the need for external resistors or digital configuration, simplifying design and reducing bill-of-materials cost. The logic thresholds are defined as VIL ≤ (V–) + 0.2 V and VIH ≥ (V–) + 1 V, ensuring robust compatibility with standard GPIOs. The INA350ABSIDDFR maintains consistent performance across both gains, including 95 dB CMRR and 0.2 mV offset.

How does the shutdown function operate on the INA350ABSIDDFR, and what is its impact on power consumption?

The INA350ABSIDDFR's SHDN pin disables the amplifier when pulled low, reducing quiescent current to 0.70–1.25 µA. When enabled (SHDN high), typical IQ is 100 µA. The disable time (tOFF) is 4 µs, and enable time (tON) is 100 µs - enabling rapid power cycling in duty-cycled sensor systems. This feature is critical for extending battery life in wearable fitness monitors and portable medical devices. The INA350ABSIDDFR's shutdown behavior is fully characterized across –40°C to 125°C and all supply voltages (1.8 V–5.5 V), ensuring reliable operation in harsh environments.

What is the maximum capacitive load the INA350ABSIDDFR can drive while maintaining stability?

The INA350ABSIDDFR is specified to drive up to 500 pF with less than 20% overshoot under small-signal conditions (100 mV step), per TI SBOSAA0C Rev C. This capability allows direct connection to typical ADC input capacitors (e.g., 10–100 pF) and longer PCB traces without requiring series isolation resistors. Stability is maintained across all gains (G = 10/20) and supply voltages (1.8 V–5.5 V). For loads exceeding 500 pF, external compensation or a small series resistor (e.g., 10–50 Ω) may be needed - but the INA350ABSIDDFR's robust phase margin eliminates the need for complex compensation networks in most sensor interface applications.

Does the INA350ABSIDDFR require external resistors for gain setting or reference biasing?

No, the INA350ABSIDDFR integrates precision matched thin-film resistors for gain setting and requires no external components to configure G = 10 or G = 20. Its REF pin accepts a low-impedance DC bias (e.g., from a resistor divider or op-amp buffer) and provides unity gain to set the output common-mode voltage - no feedback network is needed. This integration reduces PCB area, eliminates resistor matching tolerances, and improves temperature drift performance. Unlike discrete IA implementations or older-generation IAs, the INA350ABSIDDFR achieves this while maintaining 0.05% typical gain error at G = 10 and 0.06% at G = 20 - all within its 4.64 mm² DDF package.

What is the operating temperature range and supply voltage specification for the INA350ABSIDDFR?

The INA350ABSIDDFR is fully specified from –40°C to +125°C ambient temperature and operates from a single supply of 1.8 V to 5.5 V (or dual supply ±0.9 V to ±2.75 V). All key parameters - including offset voltage (±1.2 mV max), CMRR (≥85 dB min), gain error (±0.6% max), and quiescent current (≤135 µA) - are guaranteed across this full range. This makes the INA350ABSIDDFR suitable for under-hood automotive sensors, industrial process transmitters, and outdoor environmental monitors. Its thermal resistance (RθJA = 169.1°C/W in DDF) and junction-to-board metric (RθJB = 84.8°C/W) further support reliable operation in thermally constrained layouts.