Texas Instruments INA826SIDRCR

Overview

INA826SIDRCR from Texas Instruments is a precision instrumentation amplifier optimized for low-power, rail-to-rail output operation across 3 V to 36 V single or ±1.5 V to ±18 V dual supplies. It delivers 104 dB min CMRR at G = 10, 150 µV max input offset voltage, 200 µA quiescent current, and shutdown current of 2 µA - enabling high-accuracy sensor signal conditioning in battery-powered ECG amplifiers and industrial process controllers.

For engineers reviewing the INA826SIDRCR datasheet, INA826SIDRCR pinout, INA826SIDRCR application, or INA826SIDRCR equivalent, key selection criteria include its gain-setting resistor interface (G = 1 + 49.4 kΩ/R_G), ±40 V input overvoltage protection, 1 MHz bandwidth at G = 1, and specified operation from –40°C to +125°C in the 3-mm × 3-mm VSON package.

Technical Context

The INA826SIDRCR employs a three-op-amp topology with integrated 50-kΩ thin-film resistors forming the difference amplifier stage, enabling high common-mode rejection without external trimming. Its input buffers (A1, A2) provide high impedance (10 GΩ || 5 pF common-mode, 20 GΩ || 1 pF differential) and extend the input common-mode range to include V– and up to 1 V below V+.

Gain is set by a single external resistor (R_G) between pins 2 and 3, yielding programmable gain from 1 to 1000. The device integrates RFI filters on both inputs (–3 dB at 20 MHz) and features active input current limiting to <8 mA under ±40 V overvoltage conditions, with shutdown controlled via EN/ENREF pins referenced to a dedicated enable reference.

Key Specifications

Pinout & Package

The INA826SIDRCR is housed in a 10-pin, 3-mm × 3-mm VSON (DRC) package with an exposed thermal pad that must be soldered to V– for specified thermal performance (R_θJB = 25.8°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar instrumentation amplifier applications.

Compared with INA828IDRCT and AD8421ARMZ, the INA826SIDRCR uniquely balances sub-200 µA quiescent current, ±40 V input protection, and 3-mm × 3-mm VSON packaging - making it optimal for space- and power-constrained industrial and medical edge sensors where moderate bandwidth suffices.

Availability

INA826SIDRCR is available at Aetrix Electronics and suitable for industrial process controls, battery testers, and ECG amplifiers requiring stable component supply with guaranteed long-term availability and traceable sourcing.

Supply support for INA826SIDRCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in precision signal chain solutions.

The INA826S product line targets cost-sensitive, low-power instrumentation applications - delivering rail-to-rail output, shutdown capability, and robust input protection in compact packages for medical, industrial, and test equipment.

FAQ

What is the minimum external gain-setting resistor value for the INA826SIDRCR?

The INA826SIDRCR supports gains from 1 to 1000 using a single external resistor R_G between pins 2 and 3 per G = 1 + 49.4 kΩ/R_G. To achieve G = 1000, R_G = 49.4 Ω is required. TI specifies R_G ≥ 49.4 Ω for stability and accuracy; lower values risk gain nonlinearity and thermal drift. The INA826SIDRCR datasheet confirms 49.4 Ω as the practical minimum for full-specified performance.

Does the INA826SIDRCR require external capacitors on the REF pin?

Yes - the REF pin of the INA826SIDRCR must be driven by a low-impedance source, and TI recommends a 0.1 µF ceramic capacitor placed directly at the pin to ground for noise suppression and stability. This capacitor minimizes reference path impedance at high frequencies and prevents oscillation when driving reactive loads. The INA826SIDRCR's REF input impedance is only 100 kΩ, so bypassing is essential for precision applications.

How does the EN/ENREF interface differ from standard enable pins on other TI instrumentation amps?

The INA826SIDRCR uses a differential enable scheme: EN is referenced to ENREF, not to ground or supply. ENREF must be biased between (V–) + 1.5 V and V+, and EN must fall ≤ –0.75 V below ENREF to activate shutdown. This architecture rejects common-mode noise on the enable line - critical in noisy industrial environments. Unlike single-pin enables, this design prevents false triggering in high-EMI settings and is explicitly defined in the INA826SIDRCR electrical characteristics table.

Can the INA826SIDRCR operate with a 2.7-V supply?

No - the INA826SIDRCR has a minimum specified supply voltage of 3 V for single-supply operation, as stated in Section 6.3 (Recommended Operating Conditions) of its datasheet. Operation below 3 V risks undefined behavior, reduced CMRR, and failure to meet rail-to-rail output specifications. While some units may function at 2.7 V, TI does not characterize or guarantee performance there; the INA826SIDRCR is not rated for sub-3-V use.

What is the purpose of the thermal pad on the INA826SIDRCR VSON package?

The exposed thermal pad on the bottom of the INA826SIDRCR's VSON (DRC) package must be soldered to the PCB's V– (ground) plane to achieve the specified thermal performance: R_θJB = 25.8°C/W. Without this connection, junction-to-board resistance degrades significantly, risking thermal runaway at full load. TI's datasheet explicitly states "Soldering the thermal pad improves heat dissipation and provides specified performance" - making it mandatory, not optional, for reliable INA826SIDRCR operation.