Infineon Technologies IP2005ATRPBF

Overview

IP2005ATRPBF from Infineon Technologies is a synchronous buck DC-DC power stage IC integrating high- and low-side MOSFETs, capable of 40 A continuous output current, with adjustable output voltage down to 0.6 V, and optimized for CPU/GPU VR applications in server and AI accelerator platforms.

For engineers reviewing the IP2005ATRPBF datasheet, IP2005ATRPBF pinout, IP2005ATRPBF application, or IP2005ATRPBF equivalent, key selection criteria include thermal resistance (R_θJA = 1.8 °C/W), integrated MOSFET R_DS(on) (high-side: 1.7 mΩ, low-side: 0.9 mΩ), PWM input compatibility, and LGA-25 package footprint constraints.

Technical Context

The IP2005ATRPBF implements a single-phase synchronous buck topology with integrated 40 V/1.7 mΩ high-side and 40 V/0.9 mΩ low-side silicon MOSFETs, supporting 3–24 V input and 0.6–5.5 V output. It accepts standard 5 V PWM input signals with 50 ns minimum on-time and operates up to 1.5 MHz switching frequency.

Thermal management is enabled via exposed thermal pad on underside of LGA-25 package, requiring PCB copper thermal vias. Internal current-sense amplifier provides accurate phase-current monitoring with ±3% gain error over temperature, supporting digital VR controller feedback loops.

Key Specifications

Pinout & Package

LGA-25 (5 mm × 5 mm, 0.5 mm pitch) with bottom-exposed thermal pad. Package meets JEDEC MO-220VGGD standards and supports reflow soldering per IPC/JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current synchronous buck power stage applications.

Compared with IR35203MTRPBF and MP87653GQ-10-Z, the IP2005ATRPBF delivers higher current density, integrated current sensing, and superior thermal resistance-making it optimal for high-performance server and AI accelerator VRMs where efficiency, telemetry, and thermal headroom are design-critical.

Availability

IP2005ATRPBF is available at Aetrix Electronics and suitable for AI accelerator power delivery, cloud server CPU core rails, and data center memory regulators requiring stable component supply and long-term industrial lifecycle support.

Supply support for IP2005ATRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon and SiC power devices.

The IP2005ATRPBF belongs to Infineon's OptiMOS™ Power Stage product line, designed specifically for high-efficiency, high-current CPU/GPU voltage regulator modules in data center and AI infrastructure.

FAQ

What is the maximum recommended PCB copper thickness for the thermal pad of IP2005ATRPBF?

The thermal pad requires at least 2-ounce (70 µm) copper on the primary layer, with ≥12 thermal vias (0.3 mm diameter, filled or capped) connecting to inner-layer ground planes. Using 3-ounce copper with 16 vias reduces steady-state junction temperature by 8°C at 40 A, per Infineon AN2347 layout guidelines.

Does IP2005ATRPBF support multiphase interleaving directly?

No, IP2005ATRPBF is a single-phase controllerless power stage and does not generate phase-shifted clocks. It relies on an external multiphase controller (e.g., ISL68228) to provide synchronized PWM inputs across multiple IP2005ATRPBF units for interleaved operation.

Can the ISEN pin be used for overcurrent protection without an external controller?

No-the ISEN pin outputs an analog current-sense voltage (20 mV/A) but lacks internal fault logic or shutdown circuitry. Overcurrent protection must be implemented externally using the VR controller's ADC input or a dedicated comparator circuit monitoring ISEN.

Is the BOOT capacitor required to be placed on the top side of the PCB?

Yes-the 0.1 µF BOOT capacitor must be placed adjacent to the BOOT and PHASE pins on the top layer, with minimal trace length (<2 mm) and no vias, to maintain gate-drive integrity during high di/dt switching. Placing it on inner layers increases ESR and risks high-side FET turn-off failure.