Infineon Technologies IR1150ISTRPBF

Overview

IR1150ISTRPBF from Infineon Technologies is a continuous conduction mode (CCM) boost-type power factor correction (PFC) control IC implementing proprietary One Cycle Control (OCC), eliminating line voltage sensing, supporting 50–200 kHz programmable switching frequency, and delivering <200 µA sleep-mode current. It drives external MOSFETs in AC-DC front-end stages for industrial SMPS and LED drivers.

For engineers reviewing the IR1150ISTRPBF datasheet, IR1150ISTRPBF pinout, IR1150ISTRPBF application, or IR1150ISTRPBF equivalent, key selection criteria include OCC-based current-loop architecture, OVP/EN dual-function pin behavior, 98% max duty cycle limit, 1.5 A peak gate drive capability, and SOIC-8 thermal performance (R_θJA = 128 °C/W).

Technical Context

The IR1150ISTRPBF implements a two-loop control architecture: a fast inner current loop that derives input voltage dependency from duty-cycle modulation-enabling sinusoidal input current without direct line sensing-and an outer voltage loop using a transconductance error amplifier (g_m = 40 µS) to regulate DC bus voltage via COMP pin compensation.

OCC operation eliminates analog multipliers and line-sense circuitry, reducing THD at light load while maintaining EN61000-3-2 Class D compliance; protection includes cycle-by-cycle ISNS-based peak current limiting (−1.04 V threshold), brownout detection (V_CC UVLO = 10.7 V), and open-loop fault response with 1.2–1.5 V COMP FLT voltage.

Key Specifications

Pinout & Package

IR1150ISTRPBF is housed in an 8-pin SOIC package (body width 3.9 mm, lead pitch 1.27 mm), rated for −25 °C to 85 °C ambient operation (IR1150I variant), with R_θJA = 128 °C/W under standard board-mount conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PFC controller applications.

Compared with UCC28070DR and FAN4803SMX, the IR1150ISTRPBF uniquely integrates OCC-based line-sensing elimination, programmable sleep mode activation, and dual-function OVP/EN pin-reducing component count by ≥4 passive parts and enabling single-stage PFC compliance in compact form factors.

Availability

IR1150ISTRPBF is available at Aetrix Electronics and suitable for LED driver front-ends, industrial SMPS input stages, and server PSU auxiliary PFC circuits requiring stable component supply, long-lifecycle availability, and RoHS-compliant packaging.

Supply support for IR1150ISTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IR1150 product line delivers highly integrated, cost-optimized PFC controllers for universal-input AC-DC conversion, targeting energy-efficient consumer, industrial, and lighting applications with simplified design cycles.

FAQ

What is the minimum external resistor value for the FREQ pin to achieve 200 kHz operation?

The IR1150ISTRPBF datasheet specifies a 37 kΩ resistor from FREQ to COM yields approximately 200 kHz. Using a lower resistance risks exceeding the maximum frequency limit and may cause instability due to reduced minimum off-time margin (200–400 ns). Resistor tolerance should be ≤1% to maintain ±5% frequency accuracy across temperature.

How does the OVP/EN pin initiate sleep mode, and what is the required voltage threshold?

Sleep mode is activated when the OVP/EN pin voltage drops below 0.62 V (typical), causing total supply current to fall to 125–200 µA. This is achieved by connecting a pull-down resistor from OVP/EN to COM, sized to ensure voltage remains below threshold during standby. The pin retains its overvoltage protection function above 105.5% V_REF (≈7.4 V).

Can the IR1150ISTRPBF drive a 500 V, 20 A MOSFET directly without external gate drivers?

Yes-the 1.5 A peak gate drive and 13 V internal clamp support direct driving of MOSFETs with ≤10 nF total gate charge (Q_g) at 200 kHz. For a typical 500 V, 20 A MOSFET (e.g., IPW60R099CP) with Q_g ≈ 45 nC, gate charge time is ~30 ns at 1.5 A, well within safe operating limits. Layout must minimize gate loop inductance.

What is the purpose of the 350 ns blanking time on the ISNS pin, and how does it affect noise immunity?

The 350 ns leading-edge blanking window disables the peak current comparator immediately after GATE turn-on, preventing false triggering from voltage spikes caused by parasitic inductance in the current-sense path. This blanking time is factory-trimmed and temperature-compensated, ensuring consistent noise rejection across −25 °C to 85 °C ambient without external RC filtering.