Infineon Technologies IR5001S

Overview

IR5001S from Infineon Technologies is a universal high-speed active ORing controller and N-channel MOSFET driver for redundant DC power systems. It provides reverse polarity protection and fast 130 ns turn-off response, supports 36–100 V input voltage range, delivers 3 A peak gate drive current, and operates in SO-8 package. Used in carrier-class telecom equipment for -48 V input ORing and redundant AC-DC/DC-DC outputs.

For engineers reviewing the IR5001S datasheet, IR5001S pinout, IR5001S application, or IR5001S equivalent, key selection criteria include turn-off delay under fault conditions, integrated 100 V input clamps, asymmetrical comparator offset to prevent light-load oscillation, UVLO thresholds (9.6 V ON / 7.2 V OFF), and dual bias options (Vline or external Vcc).

Technical Context

The IR5001S integrates a high-speed comparator with -4.0 mV typical input offset and 31 mV hysteresis, enabling stable detection of forward vs. reverse current flow across an N-channel ORing FET. Its internal shunt regulator maintains Vcc at 12.5 V (typ) from Vline inputs between 25 V and 100 V.

Vout drives the MOSFET gate directly with 11.5 V high-level output and 0.1 V low-level output, while FETch and FETst pins provide system-level redundancy status monitoring. Both INP and INN feature integrated 70 kΩ high-voltage resistors and clamps, allowing direct connection to up to 100 V source/drain nodes without external protection.

Key Specifications

Pinout & Package

IR5001S is housed in an SO-8 surface-mount package (5.0 mm × 6.0 mm, 1.27 mm pitch) with standard thermal pad layout and θJA = 128°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar active ORing controller applications.

Compared with LM5050-1 and TPS2410, the IR5001S uniquely combines 100 V input clamps, internal 12.5 V shunt regulation, and sub-150 ns turn-off in a single SO-8 package-enabling compact, robust ORing designs for carrier-grade infrastructure without external protection or bias circuitry.

Availability

IR5001S is available at Aetrix Electronics and suitable for carrier-class telecom power ORing, redundant AC-DC rectifier outputs, and processor core voltage ORing requiring stable component supply across extended temperature and voltage ranges.

Supply support for IR5001S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The IR5001S belongs to Infineon's Active ORing Controller product line, engineered specifically for high-reliability DC redundancy in telecom, datacom, and server power systems where fast fault response and minimal external components are critical.

FAQ

What is the recommended layout practice for INP and INN traces?

INP and INN traces must be matched in length and routed as tightly coupled differential pair over solid ground plane, with total trace length under 5 mm. Keep connections to MOSFET source/drain terminals as short as possible to minimize noise pickup and ensure accurate current-direction detection. Avoid routing near switching nodes or high-dv/dt paths.

Can IR5001S drive multiple parallel N-channel MOSFETs?

Yes - the 3 A peak gate drive current supports driving multiple parallel N-FETs provided total gate charge (Qg) remains within safe SOA limits. For example, two 50 nC FETs (100 nC total) switched in 33 ns require ~3 A average current, aligning with IR5001S capability. Always verify thermal dissipation using θJA = 128°C/W and worst-case ambient conditions.

How does the asymmetrical comparator offset improve system reliability?

The -4.0 mV typical offset ensures the comparator never operates near zero differential voltage, eliminating ambiguity during light-load transitions. This prevents unintended oscillation that could cause FET chatter, gate overheating, or bus instability - especially critical in low-current standby modes of telecom equipment.

Is external decoupling required on Vcc, and what value is recommended?

Yes - a minimum 0.1 µF ceramic capacitor must be placed between Vcc and Gnd, located within 2 mm of the IC pins. This stabilizes the internal shunt regulator and suppresses high-frequency noise from gate switching. For systems with heavy transient loads, add a 1–10 µF tantalum or polymer capacitor in parallel to handle bulk current demand.