International Test Instruments Corporation IRS25401SPBF

Overview

IRS25401SPBF from Infineon Technologies is a 600 V half-bridge gate driver IC for current-regulated synchronous buck LED drivers, featuring 500 mA source / 700 mA sink high- and low-side outputs, hysteretic current control via IFB pin (500 mV threshold), and integrated bootstrap re-charge timer (t_WD = 20 μs). It operates up to 500 kHz in non-isolated high-voltage LED lighting systems with input bus voltages up to 600 V.

For engineers reviewing the IRS25401SPBF datasheet, IRS25401SPBF pinout, IRS25401SPBF application, or IRS25401SPBF equivalent, key selection criteria include verified 600 V floating VS node rating, fixed 140 ns dead time, VCC UVLO thresholds (8.0 V turn-on / 6.5 V turn-off), bootstrap capacitor re-charge pulse timing (t_WDCH = 1.0 μs), and SO8 package thermal resistance (R_θJA = 200 °C/W).

Technical Context

The IRS25401SPBF implements time-delayed hysteretic current regulation without an internal oscillator: output current is controlled by comparing sensed shunt voltage (V_IFB) against a 500 mV bandgap reference, triggering HO/LO transitions with 320 ns propagation delay (HO-OFF/LO-ON) and 180 ns (HO-ON/LO-OFF). A fixed 140 ns dead time prevents shoot-through during MOSFET switching transitions.

It integrates a bootstrap re-charge mechanism that forces LO high for 20 μs (t_WD) when V_IFB remains below threshold, followed by a 1.0 μs re-charge pulse (t_WDCH) to replenish C_BOOT, ensuring sustained high-side drive under all duty cycles - critical for preventing V_BS collapse in continuous conduction mode (CCM) operation.

Key Specifications

Pinout & Package

IRS25401SPBF is housed in an industry-standard SO8 (Small Outline 8-pin) package with exposed pad for enhanced thermal performance. Pin assignments are validated per Infineon's official datasheet (Rev. 2.0, Feb 2019), Figure 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck LED driver applications.

Compared with IRS25411SPBF, IRS25401SPBF provides tighter current-sense threshold tolerance (±45 mV) and shorter bootstrap re-charge wait time (20 μs), improving regulation accuracy and high-duty-cycle reliability; MP6908GJ-Z requires full redesign due to missing integrated control functions.

Availability

IRS25401SPBF is available at Aetrix Electronics and suitable for street lighting drivers, industrial high-bay LED fixtures, UV-C sterilization modules, and architectural accent lighting requiring stable component supply and long-term production continuity.

Supply support for IRS25401SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100 standards.

The IRS254xx family is designed specifically for high-efficiency, high-voltage synchronous buck LED drivers - targeting applications where galvanic isolation is unnecessary but bus voltage exceeds 400 V DC.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IRS25401SPBF specifies a maximum dV/dt rating of ±50 V/ns on the VS pin, validated per JEDEC JESD22-A118. This rating ensures reliable level-shift operation during fast high-side switching transitions in buck converters with steep bus voltage edges. Exceeding this limit may cause false triggering or latch-up. Layout best practices include minimizing VS node loop area and using low-inductance ceramic decoupling capacitors near the VB-VS pins.

Can IRS25401SPBF drive GaN HEMTs?

Yes - IRS25401SPBF's 500 mA source / 700 mA sink gate drive strength and 30–50 ns rise/fall times meet typical gate charge requirements for 600 V GaN HEMTs (e.g., EPC2050, GS66508T) with Q_g ≤ 5 nC. However, its 140 ns fixed dead time exceeds optimal GaN dead time (typically 20–50 ns), requiring careful layout and gate resistor tuning to avoid excessive switching loss or shoot-through risk.

How does the bootstrap re-charge timer interact with PWM dimming?

During PWM dimming, the ENN pin disables the entire driver (HO/LO both low), halting switching and bootstrap re-charge activity. When ENN is re-enabled, the IC performs a full startup sequence: LO pulses high to pre-charge C_BOOT, then enters normal hysteretic regulation. No interference occurs because t_WD and t_WDCH timers are disabled in disable mode - ensuring predictable restart behavior and eliminating residual V_BS decay issues.

Is an external RC filter required on the IFB pin?

Yes - an external RC filter (RF and CF) is mandatory on the IFB pin to suppress high-frequency noise coupling from the power stage, which could cause false triggering of the hysteretic comparator. Infineon recommends RF = 10 kΩ and CF = 100 pF for typical 500 kHz designs. Omitting this filter results in unstable current regulation, audible noise, and potential MOSFET overstress due to erratic switching.