Infineon Technologies IRS25411STRPBF

Overview

IRS25411STRPBF from Infineon Technologies is a 600 V half-bridge gate driver IC for current-regulated synchronous buck LED drivers, featuring hysteretic current control, 500 mA source / 700 mA sink gate drive outputs, and SO8 package. It enables high-efficiency, non-isolated LED lighting systems operating from high-voltage DC bus inputs up to 600 V.

For engineers reviewing the IRS25411STRPBF datasheet, IRS25411STRPBF pinout, IRS25411STRPBF application, or IRS25411STRPBF equivalent, key selection criteria include bootstrap-recharge timing (tWD = 20.0 μs), IFB input threshold (455–540 mV), dead time (140 ns), VCC UVLO thresholds (8.0–10.0 V turn-on), and ZVS-capable operation in continuous conduction mode.

Technical Context

The IRS25411STRPBF implements time-delayed hysteretic current regulation using an internal 500 mV bandgap reference (VIFBTH) compared against shunt-sensed feedback voltage. It integrates independent high-side (HO) and low-side (LO) gate drivers with 600 V floating capability, UVLO on both VCC and VBS supplies, and automatic bootstrap capacitor (CBOOT) recharging logic.

Its functional architecture includes propagation-delay-matched HO/LO outputs (tHO-OFF/tLO-OFF = 180 ns; tHO-ON/tLO-ON = 320 ns), fixed 140 ns dead time, and a re-charge timer that forces LO high for 1.0 μs every 20.0 μs to sustain VBS - enabling reliable startup and sustained operation without external timing components.

Key Specifications

Pinout & Package

IRS25411STRPBF is housed in an industry-standard SO8 (Small Outline, 8-pin) package with exposed thermal pad (RoHS-compliant, halogen-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck LED driver applications.

Compared with IRS25407STRPBF and UCC27211D, the IRS25411STRPBF uniquely integrates hysteretic current regulation, autonomous bootstrap management, and 600 V high-side operation - reducing BOM count by ≥4 components and eliminating timing-critical layout constraints associated with external recharge circuits.

Availability

IRS25411STRPBF is available at Aetrix Electronics and suitable for industrial high-bay lighting, streetlight LED drivers, architectural floodlights, and UV-C disinfection modules requiring stable component supply and long-term production continuity.

Supply support for IRS25411STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and energy-efficient solutions.

The IRS25411STRPBF belongs to Infineon's LED Driver IC product line, designed specifically for high-efficiency, non-isolated, current-regulated LED lighting systems operating directly from high-voltage DC bus inputs.

FAQ

What is the minimum recommended bootstrap capacitor value for IRS25411STRPBF?

The datasheet specifies a 0.1 μF ceramic capacitor rated for 25 V as the minimum recommended CBOOT value. This value ensures sufficient charge storage to sustain VBS during worst-case duty cycles and switching frequencies up to 500 kHz. Lower values risk VBS droop and HO driver failure; X7R or C0G dielectrics are preferred for stability across temperature.

Can IRS25411STRPBF drive GaN HEMTs in place of silicon MOSFETs?

Yes - its 500 mA source / 700 mA sink gate drive strength, 30 ns rise time, and 140 ns dead time are compatible with enhancement-mode GaN HEMTs requiring low gate charge and fast switching. However, layout must minimize loop inductance, and VGS slew rate must stay within GaN device limits (typically <10 V/ns) using appropriate gate resistors.

How does the IRS25411STRPBF handle overvoltage on the IFB pin?

The IFB pin has absolute maximum rating of −0.3 V to VCC+0.3 V. Exceeding this range risks latch-up or permanent damage. External clamping (e.g., series resistor + TVS to COM) is recommended if noise or transients exceed ±500 mV around the 500 mV threshold, especially in high-dV/dt environments like 600 V buck nodes.

Is the ENN pin compatible with 3.3 V microcontroller GPIOs?

Yes - the ENN pin has a 1.7–2.3 V enable threshold and 2.5–3.0 V disable threshold, making it fully compatible with standard 3.3 V logic outputs. A 3.3 V GPIO driven high disables the driver (HO low, LO high); driven low enables normal hysteretic operation. No level-shifter is needed.