Infineon Technologies IRS2580DSTRPBF

Overview

IRS2580DSTRPBF from Infineon Technologies (formerly International Rectifier) is a single-chip electronic ballast controller integrating critical-conduction-mode boost PFC and half-bridge gate driver for fluorescent lamp systems. It delivers 600 V high-side voltage tolerance, 180 mA/260 mA IO+/IO− sink/source drive capability, 1.7 µs fixed dead-time, internal VBUS sensing, and programmable preheat/ignition/run timing. Used in compact fluorescent lamp (CFL) and T5/T8 linear electronic ballasts.

For engineers reviewing the IRS2580DSTRPBF datasheet, IRS2580DSTRPBF pinout, IRS2580DSTRPBF application, or IRS2580DSTRPBF equivalent, key selection criteria include PFC loop compensation integration, half-bridge non-ZVS protection, lamp EOL detection via VCC window comparator, and Rds(on)-based over-current sensing without external shunt.

Technical Context

This IC implements a two-stage control architecture: a boost-type PFC stage operating in critical conduction mode with internal error amplifier and compensation network, and a resonant half-bridge inverter stage controlled by a voltage-controlled oscillator (VCO) with analog input. The PFC section regulates DC bus voltage using internal VBUS sensing and supports programmable over-current threshold.

The half-bridge driver provides complementary outputs with fixed 1.7 µs dead-time, non-zero-voltage-switching (non-ZVS) protection, and over-current detection via low-side MOSFET Rds(on). Lamp end-of-life (EOL) is detected using a latched VCC window comparator and internal fault timer.

Key Specifications

Pinout & Package

IRS2580DSTRPBF is housed in an 8-pin SOIC package (SOIC-8, 150 mil width) with standard pin spacing and thermal pad omitted.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar electronic ballast controller applications.

Compared with IRS2166DSTRPBF and BD7901FJ-E2, IRS2580DSTRPBF uniquely integrates CRM PFC compensation and 600 V half-bridge drive in one SOIC-8 package-enabling lowest-component-count solutions for sub-40 W fluorescent ballasts with analog timing control.

Availability

IRS2580DSTRPBF is available at Aetrix Electronics and suitable for compact fluorescent lamp (CFL) ballasts, T5/T8 linear fluorescent systems, and lamp end-of-life detection modules requiring stable component supply and long-lifecycle support.

Supply support for IRS2580DSTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains its high-voltage analog IC portfolio for lighting and power conversion.

The IRS2580DSTRPBF belongs to the "COMBO" series of integrated ballast controllers, designed specifically for cost-sensitive, high-reliability fluorescent lamp systems requiring analog-programmable timing and built-in safety features.

FAQ

What is the maximum recommended operating frequency for the half-bridge driver?

The IRS2580DSTRPBF supports half-bridge operation up to 100 kHz, with typical run frequency set between 35–65 kHz depending on lamp type and resonant tank design. Preheat and ignition frequencies are programmable separately via the VCO pin voltage, allowing optimization for electrode heating and arc striking without external clock components.

How does the internal PFC over-current protection function?

PFC over-current protection is triggered when the voltage at the CS pin exceeds an internal 1.2 V threshold during boost inductor current sensing. This threshold is fixed and not adjustable; it corresponds to peak inductor current limiting. The protection initiates immediate shutdown of the PFC switch and initiates restart after a fixed delay, preventing MOSFET overstress under short-circuit or overload conditions.

Can IRS2580DSTRPBF drive GaN or SiC half-bridge switches?

No - IRS2580DSTRPBF is optimized for silicon MOSFETs with gate thresholds of 2–4 V and total gate charge ≤20 nC. Its 180 mA/260 mA drive strength and 1.7 µs dead-time are insufficient for fast-switching GaN or SiC devices, which require higher peak current, tighter dead-time control, and negative turn-off bias not supported by this IC.

Is external bootstrap diode required for high-side driver operation?

No external bootstrap diode is required. The IRS2580DSTRPBF integrates an internal bootstrap diode and capacitor charging path from VCC to VB through an internal charge pump. The VS pin serves as the floating return, and the internal circuitry automatically replenishes the bootstrap capacitor during each LO low-to-high transition, enabling continuous high-side drive without external components.