Infineon Technologies IRS27952SPBF

Overview

IRS27952SPBF from Infineon Technologies (formerly International Rectifier) is a self-oscillating resonant half-bridge driver IC for LLC converter topologies, featuring programmable 44–299 kHz switching frequency, 170–250 ns dead time, 300 mA high-side/900 mA low-side gate drive, and 600 V floating offset capability. It enables primary-side control in high-efficiency AC-DC power supplies for flat-panel displays.

For engineers reviewing the IRS27952SPBF datasheet, IRS27952SPBF pinout, IRS27952SPBF application, or IRS27952SPBF equivalent, key selection criteria include its bootstrap-based high-side operation up to +600 V, micropower sleep mode (150–200 µA), over-current protection via low-side R_DS(on) sensing, and dual external programming of frequency and dead time using RT and CT pins.

Technical Context

The IRS27952SPBF integrates a self-oscillating controller with internal current fault logic, leading-edge blanking (300 ns), and matched delay paths for HO/LO outputs. Its oscillator uses an external RT resistor and CT capacitor to set frequency and dead time independently, with guaranteed matching between high- and low-side dead times (≤25 ns mismatch).

It employs a floating high-side level shifter with dv/dt immunity, UV detection on both VCC (10.1–11.9 V turn-on, 2 V hysteresis) and VBS (7.6–9.4 V turn-on), and a dedicated CT/SD pin supporting enable (1.05 V threshold), standby (0.85 V), and shutdown propagation (300 ns delay).

Key Specifications

Pinout & Package

IRS27952SPBF is housed in an 8-pin SOIC (SOIC8N) package with creepage and thermal performance validated for industrial-grade DC-DC converters.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar resonant half-bridge driver applications.

Compared with IRS27951SPBF, IRS27952SPBF adds sleep mode and lowers OCP threshold for better low-current fault sensitivity; versus UCC27922D, it trades external timing flexibility for integrated self-oscillation and reduced component count.

Availability

IRS27952SPBF is available at Aetrix Electronics and suitable for LCD TV power supplies, telecom SMPS, and PC SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IRS27952SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with legacy expertise from International Rectifier's high-voltage analog IC portfolio.

The IRS2795x family was designed specifically for resonant LLC half-bridge converters in high-efficiency, high-reliability AC-DC power supplies targeting consumer and telecom markets.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IRS27952SPBF specifies a guaranteed allowable offset voltage slew rate of ±50 V/ns on the VS pin. This dv/dt immunity is achieved through an integrated dv/dt booster and level-shifter architecture, enabling reliable operation during fast-switching transitions in high-frequency LLC converters without false triggering or latch-up.

How does the over-current protection function without a sense resistor?

The IRS27952SPBF monitors the voltage drop across the low-side MOSFET's R_DS(on) during conduction. When the sensed voltage exceeds 1.9–2.1 V (typical), the IC triggers immediate shutdown. This eliminates the need for an external current-sense resistor and associated layout complexity while maintaining accurate, temperature-compensated over-current detection.

Can IRS27952SPBF drive GaN HEMTs directly?

Yes - with appropriate external gate resistors and layout. The IRS27952SPBF delivers 300 mA source / 900 mA sink current and supports 200 ns rise / 65 ns fall times into 4.7 nF loads, meeting typical GaN HEMT gate drive requirements. However, designers must verify gate voltage swing (V_OH = V_CC−1 V, V_OL = 0.15 V) and ensure adequate negative turn-off margin for enhancement-mode GaN devices.

What is the minimum recommended CT capacitor value and why?

The datasheet specifies a minimum CT capacitor value of 200 pF. Using less than this risks insufficient charge storage for stable oscillator ramp generation, leading to frequency instability, increased jitter, or failure to initiate oscillation - especially under wide temperature or supply voltage variations. Values below 200 pF also degrade dead-time accuracy and increase susceptibility to noise coupling on the CT node.