Renesas ISL3035EIRTZ-T

Overview

ISL3035EIRTZ-T from Renesas Electronics is a 6-channel bidirectional auto-direction sensing logic level translator operating at up to 100Mbps, supporting VL = +1.35V to +3.2V and VCC = +2.2V to +3.6V supplies. It enables voltage translation between low-voltage microcontrollers (e.g., 1.8V I²C peripherals) and higher-voltage system interfaces (e.g., 3.3V host controllers), with ±15kV IEC61000-4-2 ESD protection on all I/O pins.

For engineers reviewing the ISL3035EIRTZ-T datasheet, ISL3035EIRTZ-T pinout, ISL3035EIRTZ-T application, or ISL3035EIRTZ-T equivalent, key selection considerations include its 100Mbps data rate at VL ≥ 1.62V, auto-direction sensing eliminating external control lines, 16-lead TQFN (3mm × 3mm) package with exposed thermal pad, shutdown current ≤ 4µA, and compatibility with both push-pull and open-drain drivers.

Technical Context

The ISL3035EIRTZ-T implements a dual-rail, accelerator-based level-shifting architecture with independent high/low threshold detectors, one-shot triggered PMOS/NMOS output drivers, and weak hold circuitry. Each channel dynamically senses direction on either I/OVL or I/OVCC side without external control, enabling bit-by-bit bidirectional translation.

It features internal 30µA pull-up current sources per I/O in active mode and 10–23kΩ pull-up resistors in shutdown mode, eliminating most external bus resistors. The device enters automatic shutdown when VCC falls below VL + 0.2V or EN is driven low, tri-stating all I/Os and reducing supply current to ≤ 4µA.

Key Specifications

Pinout & Package

ISL3035EIRTZ-T uses a 16-lead TQFN package (3.0mm × 3.0mm, 0.75mm height) with exposed thermal pad (pin 16). Pin 1 index is marked by a dot; thermal pad must be soldered to PCB ground plane for thermal and ESD performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional level translation applications.

Compared with TXS0108E and SN74AVC16T245, ISL3035EIRTZ-T delivers superior ESD robustness (±15kV vs ±8kV), lower active and shutdown current, and eliminates direction-control hardware - making it optimal for compact, low-power, high-reliability embedded interfaces where pin count and layout simplicity are critical.

Availability

ISL3035EIRTZ-T is available at Aetrix Electronics and suitable for industrial sensor interfaces, mobile memory adapters, automotive body control modules, and IoT edge node gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for ISL3035EIRTZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and enterprise applications.

The ISL3035EIRTZ-T belongs to Renesas' high-speed logic level translation product line, designed specifically for reliable, low-latency voltage domain bridging in mixed-supply systems with stringent ESD and power requirements.

FAQ

What is the maximum data rate supported by the ISL3035EIRTZ-T?

The ISL3035EIRTZ-T supports up to 100Mbps when VL ≥ 1.62V and using push-pull drivers with 150Ω source impedance and ≤15pF load capacitance. At VL = 1.35V, the guaranteed maximum data rate is 85Mbps. These values are measured under standard test conditions per the FN6492 Rev.2.00 datasheet and reflect actual timing performance, not theoretical limits.

Does the ISL3035EIRTZ-T require external pull-up resistors?

No, the ISL3035EIRTZ-T does not require external pull-up resistors for normal operation. It integrates 30µA internal pull-up current sources on each I/O pin in active mode and 10–23kΩ pull-up resistors in shutdown mode. External resistors are only recommended for high-speed open-drain signaling with heavy capacitive loads exceeding 35pF.

How does the auto-direction sensing work in the ISL3035EIRTZ-T?

The ISL3035EIRTZ-T uses per-channel high/low threshold detectors and one-shot triggered accelerator drivers. A transition on either I/OVL or I/OVCC side automatically defines that pin as input, shifts the logic level, and drives the corresponding output pin. After ~3–4ns of active driving, weak hold circuitry maintains the state until the next transition - eliminating need for external DIR signals or firmware intervention.

What is the shutdown behavior of the ISL3035EIRTZ-T?

The ISL3035EIRTZ-T enters low-power shutdown when EN is driven low or when VCC falls below VL + 0.2V. In shutdown, all I/O pins are tri-stated, VCC supply current drops to ≤2.5µA, VL supply current drops to ≤4µA, and internal pull-up resistors (10–23kΩ) become active on all I/O lines - ensuring defined logic states without external components.

Is the ISL3035EIRTZ-T pin-compatible with the ISL3034EIRTZ-T?

Yes, the ISL3035EIRTZ-T is functionally identical and pin-compatible with the ISL3034EIRTZ-T. Both share the same 16-lead TQFN package (L16.3x3A), identical pinout, electrical specifications, and thermal characteristics. The ISL3035EIRTZ-T supersedes the ISL3034EIRTZ-T per Renesas' product change notification, maintaining full drop-in compatibility for existing designs.