Renesas ISL43L410IR

Overview

ISL43L410IR from Intersil is a bidirectional, double-pole/double-throw (DPDT) analog switch optimized for low-voltage portable systems. It operates from a single +1.65V to +3.6V supply, delivers 0.25Ω ON-resistance at 3V, achieves 12ns turn-on/5ns turn-off times, and features an inhibit pin to simultaneously disable all signal paths. It is used in cellular phone ASIC interface expansion to add analog multiplexing without redesigning baseband ICs.

For engineers reviewing the ISL43L410IR datasheet, ISL43L410IR pinout, ISL43L410IR application, or ISL43L410IR equivalent, key selection criteria include guaranteed break-before-make timing, R_ON matching ≤0.03Ω, 1.8V logic compatibility with 3V supply, >9kV HBM ESD rating, and support for differential 2-to-1 mux topologies in space-constrained handheld designs.

Technical Context

The ISL43L410IR implements a fully committed DPDT architecture with two independent SPDT sections-each comprising one normally open (NO) and one normally closed (NC) switch-controlled by a shared ADD address input and global INH inhibit. Its sub-1Ω R_ON across 1.65–3.6V supply range is enabled by submicron CMOS process and optimized gate drive.

Switching is governed by CMOS transmission gates with level-shifted control logic; digital inputs are referenced to V+ and GND, not external logic rails. The device guarantees break-before-make operation (t_D ≥2ns), eliminates charge injection-induced glitches (<95pC at 3V), and maintains <0.1Ω R_ON flatness over full analog signal range (0V to V+).

Key Specifications

Pinout & Package

ISL43L410IR is packaged in a 10-lead 3×3 mm thin DFN (TDFN) with exposed thermal pad (PKG DWG L10.3x3A), optimized for high-density portable PCBs and thermal performance (θ_JA = 110°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DPDT analog switch applications.

Compared with TMUX1309RTER and ADG732BRUZ, the ISL43L410IR uniquely combines true hardware-committed DPDT topology, sub-0.3Ω R_ON, integrated inhibit functionality, and guaranteed break-before-make-making it irreplaceable for space-constrained, high-fidelity analog multiplexing where signal integrity and control simplicity are co-critical.

Availability

ISL43L410IR is available at Aetrix Electronics and suitable for cellular phone baseband expansion, portable medical sensor multiplexing, USB-C audio adapter design, and handheld test equipment requiring stable component supply and long-term lifecycle continuity.

Supply support for ISL43L410IR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Intersil Corporation (now part of Renesas Electronics) is a U.S.-based semiconductor designer specializing in high-performance analog and mixed-signal ICs for power management, precision analog, and interface applications.

The ISL43L410IR belongs to Intersil's ultra-low-voltage analog switch product line, engineered specifically for battery-powered portable electronics where minimal R_ON, fast switching, and single-supply operation are essential.

FAQ

What is the maximum allowable analog signal voltage range for ISL43L410IR?

The ISL43L410IR supports an analog signal range from 0V to V+, where V+ is the applied positive supply voltage. With V+ set to +3.3V, the signal range is 0V to +3.3V. Exceeding this range forward-biases internal ESD protection diodes, risking damage or increased leakage; therefore, analog signals must remain within the supply rails at all times.

Does ISL43L410IR support true break-before-make switching, and what is its minimum guaranteed delay?

Yes, ISL43L410IR guarantees break-before-make operation with a minimum time delay (t_D) of 2ns across the full −40°C to +85°C temperature range. This ensures no overlap between NC and NO path conduction during ADD input transitions, preventing signal shorting in sensitive analog circuits such as differential receivers or sensor front-ends.

Can ISL43L410IR operate from a 1.8V supply, and how does performance change versus 3V operation?

Yes, ISL43L410IR operates from +1.65V to +3.6V. At 1.8V supply, R_ON increases to 0.4Ω typical (vs. 0.25Ω at 3V), t_ON/t_OFF degrade to 22ns/9ns, and logic thresholds shift to VINH ≥1.0V/VINL ≤0.4V. All specifications remain fully guaranteed across temperature, making it viable for single-cell Li-ion systems under load.

What package type is used for ISL43L410IR, and does it include thermal enhancement?

ISL43L410IR uses a 10-lead 3×3 mm thin DFN package (drawing L10.3x3A) with an exposed thermal pad. This pad improves thermal dissipation (θ_JA = 110°C/W) and provides a low-inductance ground path, critical for maintaining low noise and stable R_ON in high-frequency analog switching applications.

How does the INH (inhibit) pin function, and what logic level disables all switches?

The INH pin is an active-high global disable control. When INH is driven to V+ (logic '1'), all four switch paths (NO1/NC1/NO2/NC2) open simultaneously, regardless of ADD state. When INH is tied to GND (logic '0'), normal ADD-controlled switching resumes. This enables system-level power gating without modifying address logic.