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Renesas ISL6530CB
- Part No.:
- ISL6530CB
- Manufacturer:
- Renesas
- Category:
- Special Purpose Regulators
- Package:
- 24-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
ISL6530CB.pdf
- Description:
- IC REG CTRLR INTEL 2OUT 24SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,712
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Product details
Overview
ISL6530CB from Intersil is a dual 5V synchronous buck PWM controller IC designed for DDRAM memory power delivery, generating precisely regulated 2.5V VDDQ, 1.25V VREF (±1%), and tracking VTT outputs using N-channel MOSFETs. It integrates phase-locked 300kHz oscillators (90° out-of-phase), 15MHz GBW error amplifiers, and rDS(ON)-based overcurrent protection for the VDDQ regulator. Used in AMD Athlon/K8, Pentium III/IV, and PowerPC-based main memory systems.
For engineers reviewing the ISL6530CB datasheet, ISL6530CB pinout, ISL6530CB application, or ISL6530CB equivalent, key selection considerations include its dual-output DDRAM-specific regulation architecture, V2_SD sleep-mode window regulator for VTT hold, 0–100% duty cycle capability, and SOIC-24 package compatibility with legacy DDR1 memory power designs.
Technical Context
The ISL6530CB implements two independent voltage-mode synchronous buck controllers: VDDQ (2.5V ±2%) uses a precision 0.8V internal reference and rDS(ON) current sensing, while VTT tracks VREF (½ × VDDQ ±30mV) via dedicated error amplifier and low-power window regulator during V2_SD sleep mode. Both regulators share a single +5V input and employ adaptive shoot-through protection with distinct logic for sourcing (VDDQ) and bidirectional current handling (VTT).
Its control architecture features two phase-displaced 300kHz triangle-wave oscillators, 6V/μs slew-rate error amplifiers, digital soft-start (~7ms), and open-drain PGOOD indicating simultaneous in-regulation status of both VDDQ and VTT (±15%). The OCSET/SD pin enables shutdown and overcurrent hiccup-mode recovery without external components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDDQ Output | 2.5V ±2% over full operating range - ensures stable DDRAM core supply within JEDEC DDR1 tolerance. |
| VREF Output | Exactly ½ × VDDQ ±1% - provides precise differential signaling reference for DDRAM I/O buffers. |
| VTT Tracking | VREF ±30mV - maintains termination voltage accuracy critical for signal integrity on DDR data/address buses. |
| Oscillator Frequency | 300kHz fixed (275–325kHz range) - balances efficiency and component size for DDR1 power stages. |
| Error Amp GBW | 15MHz - enables high-loop bandwidth for fast load transient response (<10µs recovery typical). |
| Overcurrent Sensing | rDS(ON)-based, no sense resistor - eliminates power loss and BOM cost while supporting MOSFET selection flexibility. |
| Sleep Mode | V2_SD-enabled window regulator holds VTT at ½ VDDQ with ±7% error and ±10mA load capability - enables sub-100µs wake-up without VTT soft-start. |
Pinout & Package
ISL6530CB is housed in a 24-lead SOIC package (M24.3 drawing), with exposed pad not present. Pin functions are validated per FN9052 Rev 2.00 datasheet, Page 6 (Functional Pin Description) and Page 2 (SOIC top view).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| UGATE1 / UGATE2 | Upper MOSFET gate drive outputs | Drive N-channel high-side FETs; UGATE2 monitored for VTT adaptive shoot-through protection. |
| LGATE1 / LGATE2 | Lower MOSFET gate drive outputs | Drive N-channel low-side FETs; LGATE1/LGATE2 monitored to prevent simultaneous conduction. |
| PHASE1 / PHASE2 | High-side FET source nodes | Provide bootstrapping return path and enable rDS(ON)-based overcurrent detection on VDDQ leg. |
| BOOT1 / BOOT2 | Bootstrap bias inputs | Accept external bootstrap capacitors to generate >VCC gate drive for N-channel upper FETs. |
| FB1 / FB2 | Inverting inputs of error amplifiers | Receive feedback from SENSE1/SENSE2 to regulate VDDQ/VTT; support external compensation networks. |
| COMP1 / COMP2 | Error amplifier outputs | Interface with external RC compensation to stabilize voltage-mode control loops. |
| OCSET/SD | Overcurrent threshold set / shutdown input | Resistor-programmed trip point (IPEAK = 40µA × ROCSET/rDS(ON)); pulled low disables both regulators. |
| V2_SD | VTT sleep mode enable | High-level input disables VTT PWM and activates low-power window regulator to maintain VTT at ½ VDDQ. |
| PGOOD | Open-drain power-good indicator | Asserts high only when VDDQ and VTT are within ±15%, V2_SD = low, and VCC > POR threshold. |
| VREF | Buffered ½ × VDDQ output | Drives DDRAM VREF pins directly; derived from precision internal resistor divider tied to SENSE1. |
| VREF_IN | External VTT reference override | Allows bypassing internal 50% divider; requires SENSE1 disconnection and careful stability management. |
| SENSE1 / SENSE2 | Output voltage sensing inputs | Direct connection to VDDQ/VTT rails; SENSE1 sets VREF and VTT reference; SENSE2 enables window regulator in sleep mode. |
| VCC | +5V bias supply | Powers internal circuitry and serves as source for LGATE2 driver; requires local 10µF + 0.1µF decoupling. |
| GNDA | Analog ground reference | Signal ground for error amps, references, and comparators; must connect to low-impedance ground plane. |
| PGND1 / PGND2 | Power ground returns | Separate ground paths for VDDQ/VTT gate drivers; minimize loop area to reduce noise coupling. |
| PVCC1 | Lower gate driver supply | Supplies LGATE1 driver; tied to well-decoupled +5V rail independent of VCC if noise isolation required. |
Key Features
| Feature | Design Value |
|---|---|
| Dual DDRAM-specific regulation | Simultaneously delivers JEDEC-compliant VDDQ (2.5V), VREF (½ VDDQ), and VTT (tracking VREF) from single +5V input. |
| Phase-displaced 300kHz oscillators | 90° phase shift minimizes input ripple and EMI coupling between VDDQ and VTT converter stages. |
| rDS(ON)-based overcurrent protection | Eliminates current-sense resistor, reducing cost, board space, and conduction losses in VDDQ path. |
| V2_SD sleep-mode window regulator | Maintains VTT at ½ VDDQ during system suspend with <100µs wake-up latency and no soft-start delay. |
| Digital soft-start (~7ms) | Controls VDDQ ramp rate and ensures VTT tracks VDDQ during startup, preventing DDRAM initialization faults. |
| Adaptive shoot-through protection | Monitors PHASE/LGATE voltages to dynamically prevent high-side/low-side FET overlap in both regulators. |
Applications
| Desktop PC Main Memory | Workstation Graphics Memory |
|---|---|
Use Scenario: Regulating power for DDR1 SDRAM modules in AMD Athlon/K8 and Intel Pentium III/IV platforms. IC Role / Device Role / Timing Role: Dual-output PWM controller providing VDDQ (2.5V), VREF (1.25V), and VTT (1.25V) with tight tracking and coordinated soft-start. Use Value: Ensures DDRAM compliance with JEDEC JESD21-C specifications for voltage accuracy, transient response, and sleep/wake timing. | Use Scenario: Powering GDDR or DDR2 video memory subsystems in discrete GPU cards requiring low-noise, high-current termination. IC Role / Device Role / Timing Role: Generates synchronized VDDQ and VTT rails with phase-shifted switching to suppress shared-input ripple affecting pixel clock stability. Use Value: Reduces EMI-induced jitter on high-speed graphics buses (e.g., AGP, PCI Express x16) by minimizing spectral overlap between converters. |
| Server Memory Modules | Embedded Industrial DDR Systems |
Use Scenario: Supporting registered DDR1 DIMMs in dual-processor Xeon or Opteron servers with thermal-aware power sequencing. IC Role / Device Role / Timing Role: Delivers VDDQ and VTT with PGOOD monitoring and OCSET/SD fault signaling for BMC-integrated power health reporting. Use Value: Enables reliable hot-plug detection and graceful memory subsystem shutdown during overtemperature or overcurrent events. | Use Scenario: Powering DDR1 memory in fanless industrial PCs operating across 0°C–70°C ambient with long-term reliability requirements. IC Role / Device Role / Timing Role: Provides robust VDDQ/VTT regulation using SOIC-24 package with Pb-free RoHS compliance and MSL3 reflow compatibility. Use Value: Guarantees 10+ year field life under thermal cycling stress via validated SOIC thermal resistance (θJA = 65°C/W). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-output DDRAM power controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6537CR | 32-lead QFN package; supports higher current VTT sinking; includes enhanced VREF accuracy (±0.5%) and integrated MOSFET drivers with higher peak current (±2A). | Targeted at DDR2/DDR3 systems with tighter VREF tolerance and higher VTT sink current (>2A); not pin-compatible with ISL6530CB SOIC layout. | Select ISL6537CR for new DDR2 designs requiring improved VREF accuracy and higher VTT sink capability; requires PCB redesign due to QFN footprint and different pinout. |
| RT8105DGQW | Single-chip DDR3 solution with integrated MOSFET drivers; supports 1.5V VDDQ and 0.75V VREF/VTT; includes SMBus interface for dynamic voltage scaling. | Designed for DDR3 LVDIMMs and mobile platforms; lacks V2_SD sleep mode and rDS(ON) sensing; requires external VREF buffer for legacy DDR1 compatibility. | Choose RT8105DGQW for DDR3 memory power with telemetry and DVS; not suitable as drop-in replacement for ISL6530CB in DDR1 systems due to voltage level and feature mismatch. |
Compared with ISL6530CB, ISL6537CR offers superior VREF accuracy and VTT sink performance in QFN packaging but demands layout changes, while RT8105DGQW targets DDR3 with digital control at the expense of DDR1 compatibility and analog simplicity.
Availability
ISL6530CB is available at Aetrix Electronics and suitable for desktop PC main memory, workstation graphics memory, and embedded industrial DDR systems requiring stable component supply and long-lifecycle support.
Supply support for ISL6530CB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Intersil Corporation (now part of Renesas Electronics) is a U.S.-based analog and power management IC designer known for high-performance DC-DC controllers and precision references.
The ISL6530CB belongs to Intersil's DDRAM-specific power controller product line, engineered to meet JEDEC DDR1 voltage regulation, timing, and sleep-mode requirements in cost-sensitive computing platforms.
FAQ
What is the primary function of the ISL6530CB in DDRAM memory systems?
The ISL6530CB is a dual-output synchronous buck PWM controller that generates and regulates three critical DDRAM supply rails: 2.5V VDDQ for memory core power, 1.25V VREF as the differential signaling reference, and VTT termination voltage tracking VREF. It ensures JEDEC-compliant voltage accuracy, coordinated soft-start, and V2_SD sleep-mode operation specifically for DDR1 memory subsystems.
Does the ISL6530CB require external current-sense resistors for overcurrent protection?
No, the ISL6530CB implements rDS(ON)-based overcurrent protection for the VDDQ regulator by monitoring the voltage drop across the upper MOSFET's on-resistance. This eliminates the need for external sense resistors, reducing power loss, BOM cost, and PCB area-confirmed in the Functional Description section of FN9052 Rev 2.00.
How does the ISL6530CB handle DDRAM sleep mode (S3 state)?
When the V2_SD pin is driven high, the ISL6530CB disables the VTT PWM regulator and activates an internal low-power window regulator that maintains VTT at approximately ½ × VDDQ (±7% error) using the SENSE2 pin. This allows rapid wake-up without VTT soft-start, as documented in the "Power Down Mode" section of the datasheet.
What package type is used for the ISL6530CB, and is it RoHS compliant?
The ISL6530CB uses a 24-lead SOIC package (M24.3 drawing) and is RoHS compliant with Pb-free terminations, as stated in the Ordering Information table and Note on Pb-Free Availability in FN9052 Rev 2.00. Its θJA is 65°C/W under standard test conditions.
Can the ISL6530CB be used for DDR2 or DDR3 memory applications?
The ISL6530CB is specifically designed for DDR1 systems requiring 2.5V VDDQ and 1.25V VREF/VTT. It does not support DDR2 (1.8V VDDQ) or DDR3 (1.5V VDDQ) voltage levels or their associated timing and accuracy requirements. For DDR2/DDR3, Intersil recommends alternatives like ISL6537CR or ISL6522, as noted in application notes.
ISL6530CB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Applications:
- Controller, Intel Pentium® III, IV
- Voltage - Input:
- 4.5V ~ 5.5V
- Number of Outputs:
- 2
- Voltage - Output:
- 2.5V
- Operating Temperature:
- 0°C ~ 70°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-SOIC
ISL6530CB FAQ
1.How can I place an order for ISL6530CB through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6530CB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6530CB reliable?
The price and inventory of ISL6530CB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6530CB is usually 5 days.
3.What payment methods are accepted for ISL6530CB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6530CB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6530CB?
ISL6530CB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6530CB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6530CB?
For technical support, including ISL6530CB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6530CB requirements.
6.How does Aetrix verify that ISL6530CB is sourced from the original manufacturer or authorized distributors?
All ISL6530CB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6530CB meets industry standards.
7.What is the process for return or replacement of ISL6530CB?
All ISL6530CB units undergo pre-shipment inspection (PSI). If there is an issue with ISL6530CB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6530CB part is unused and in its original packaging.
Return procedure for ISL6530CB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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