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Renesas ISL6530CRZ-T
- Part No.:
- ISL6530CRZ-T
- Manufacturer:
- Renesas
- Category:
- Special Purpose Regulators
- Package:
- 32-VFQFN Exposed Pad
- Datasheet:
-
ISL6530CRZ-T.pdf
- Description:
- IC REG CTRLR INTEL 2OUT 32QFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,455
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Product details
Overview
ISL6530CRZ-T from Renesas Electronics (formerly Intersil) is a dual synchronous buck PWM controller IC designed for DDRAM memory power delivery, generating VDDQ (2.5V), VREF (½×VDDQ), and VTT (tracking VREF) with integrated overcurrent protection using MOSFET rDS(ON). It operates from a +5V input, features two 300kHz phase-shifted oscillators, and supports S3 sleep mode via V2_SD control for low-power VTT hold.
For engineers reviewing the ISL6530CRZ-T datasheet, ISL6530CRZ-T pinout, ISL6530CRZ-T application, or ISL6530CRZ-T equivalent, key selection considerations include its dual-regulator architecture for DDR termination, VDDQ/VTT tracking accuracy (±30mV), 15MHz error amplifier gain-bandwidth, adaptive shoot-through protection, and QFN-32 package thermal performance (θJA = 33°C/W).
Technical Context
The ISL6530CRZ-T integrates two independent voltage-mode PWM controllers: Channel 1 regulates VDDQ at 2.5V ±2% using a 0.8V internal reference and rDS(ON)-based overcurrent sensing; Channel 2 generates VTT referenced to VREF (derived from SENSE1), enabling precise ½×VDDQ tracking. Both channels use 300kHz triangle-wave oscillators locked with 90° phase displacement to minimize noise coupling.
It implements digital soft-start (≈7ms), Power-On Reset (POR) with 4.25–4.5V threshold, and adaptive shoot-through protection-distinct per channel: Channel 1 uses PHASE1/LGATE1 monitoring for sourcing-only operation, while Channel 2 employs UGATE2/LGATE2 sensing to enable bidirectional current flow required for DDR signal termination.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDDQ Output | 2.5V ±2% over full operating range - ensures stable DDR memory core supply within JEDEC tolerance. |
| VREF Accuracy | ½×VDDQ ±1% - provides precise differential signaling reference for DDR I/O buffers. |
| VTT Tracking | VREF ±30mV - maintains tight termination voltage match to VREF for signal integrity in high-speed DDR buses. |
| Oscillator Frequency | 300kHz ±8.3% - fixed-frequency operation enables predictable EMI filtering and compact magnetics design. |
| Error Amp GBW | 15MHz - enables high-loop bandwidth for fast load transient response (<10µs recovery typical). |
| Overcurrent Sensing | rDS(ON)-based, no external sense resistor - reduces BOM cost and PCB area while maintaining accuracy. |
| Package Thermal θJA | 33°C/W (QFN-32) - supports higher continuous output current vs. SOIC variant under same ambient conditions. |
Pinout & Package
ISL6530CRZ-T is housed in a 32-lead, 5mm × 5mm QFN package with exposed thermal pad (PKG DWG # L32.5x5), RoHS-compliant and Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| UGATE1 / UGATE2 | Upper gate drive outputs | Drive N-channel MOSFET gates; UGATE2 monitored for VTT shoot-through protection. |
| LGATE1 / LGATE2 | Lower gate drive outputs | Drive N-channel MOSFET gates; LGATE1/LGATE2 sensed for adaptive shoot-through detection. |
| PHASE1 / PHASE2 | High-side switch node inputs | Monitor upper FET source voltage for overcurrent (PHASE1) and shoot-through timing (both). |
| SENSE1 / SENSE2 | Output voltage feedback inputs | SENSE1 sets VDDQ regulation and VREF generation; SENSE2 enables VTT regulation and V2_SD window regulator. |
| VREF / VREF_IN | Reference output & override input | VREF delivers buffered ½×VDDQ to DDR devices; VREF_IN allows external reference injection or resistor-divider overdrive. |
| OCSET/SD | Overcurrent set/shutdown input | Resistor-connected pin sets VDDQ OC trip point; pulled low disables both regulators and resets soft-start. |
| V2_SD | VTT sleep mode control | High-level input disables main VTT regulator and activates low-power window regulator to hold VTT at ½×VDDQ. |
| PGOOD | Open-drain power-good indicator | Asserts high only when both VDDQ and VTT are within ±15% regulation, V2_SD = low, and VCC > POR threshold. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent buck controllers | Enables single-chip VDDQ + VTT generation with coordinated soft-start and fault response. |
| Phase-shifted 300kHz oscillators | 90° displacement reduces input ripple current and system-level EMI peaks. |
| rDS(ON)-based overcurrent protection | Eliminates current-sense resistor, saving board space and improving efficiency by ~0.5% at 10A. |
| V2_SD sleep mode with window regulator | Maintains VTT at ½×VDDQ with <±7% error and ±10mA load capability, enabling sub-100µs wake-up. |
| Adaptive shoot-through protection | Per-channel logic prevents simultaneous high-side/low-side conduction without fixed dead-time, optimizing efficiency across load range. |
Applications
| DDR Memory Power Supply | Graphics Memory Regulation |
|---|---|
Use Scenario: Providing regulated VDDQ, VREF, and VTT for DDR2 SDRAM modules in desktop/server motherboards. IC Role / Device Role / Timing Role: Dual PWM controller managing synchronous buck converters for memory core voltage and termination bias. Use Value: Ensures VDDQ stability (±2%) and VTT tracking (±30mV) critical for 400–800MT/s data rates in AMD Athlon/K8 and Intel Pentium IV platforms. | Use Scenario: Delivering precision VDDQ and VTT to GDDR3/GDDR5 video memory on discrete GPU cards. IC Role / Device Role / Timing Role: High-bandwidth voltage-mode controller generating tightly coupled memory rails with fast transient response. Use Value: 15MHz error amplifier GBW and 0–100% duty cycle support rapid load steps during texture rendering bursts without voltage droop >50mV. |
| S3 Sleep Mode Termination Hold | High-Density Memory Subsystem |
Use Scenario: Maintaining VTT bias during system suspend-to-RAM (S3) state in laptops and embedded systems. IC Role / Device Role / Timing Role: Window regulator activated via V2_SD pin to sustain VTT at ½×VDDQ with minimal quiescent current. Use Value: Enables wake-up latency <100µs by avoiding VTT soft-start reinitialization, meeting ACPI S3 timing requirements. | Use Scenario: Consolidating DDR termination power in multi-channel memory controllers (e.g., dual-rank RDIMMs). IC Role / Device Role / Timing Role: Single-package solution replacing discrete controllers to reduce layout complexity and improve thermal uniformity. Use Value: QFN-32 package (θJA = 33°C/W) supports 12A combined output in 25mm² footprint, reducing board area by 35% vs. dual-SOIC implementation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-output DDR memory controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6537IRZ-T | Higher integration: includes integrated MOSFET drivers with 2A sink/source, supports 1.8V/1.5V DDR3 VDDQ, adds VRM 11.0 compatibility. | Targets DDR3 systems requiring tighter VDDQ tolerance (±1%) and dynamic VID control; not drop-in compatible due to different pinout and FB scaling. | Select ISL6537IRZ-T for new DDR3 designs needing lower VDDQ and enhanced telemetry; ISL6530CRZ-T remains optimal for cost-sensitive DDR2 legacy platforms. |
| TPS51116PWR | TI part with integrated 5V LDO for VREF, 300kHz fixed frequency, but uses external current-sense resistors and lacks V2_SD sleep mode. | Requires additional components for VREF generation and VTT hold; suitable for industrial DDR2 where sleep mode is unused. | Choose TPS51116PWR if LDO-based VREF stability is prioritized over board area; ISL6530CRZ-T offers superior integration for space-constrained consumer DDR2 designs. |
Compared with ISL6530CRZ-T, ISL6537IRZ-T delivers enhanced DDR3 compliance and integrated drivers but requires PCB redesign, while TPS51116PWR trades integration for flexibility in non-sleep applications-making ISL6530CRZ-T the most balanced choice for proven DDR2 VDDQ/VTT delivery with minimal BOM count.
Availability
ISL6530CRZ-T is available at Aetrix Electronics and suitable for DDR2 memory power supplies, graphics subsystems, and embedded computing platforms requiring stable component supply and long-term lifecycle support.
Supply support for ISL6530CRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The ISL6530CRZ-T belongs to Renesas' legacy Intersil DDR power management portfolio, engineered specifically for high-efficiency, low-noise dual-rail DDR2 memory regulation with integrated protection and sleep-mode optimization.
FAQ
What is the primary function of the ISL6530CRZ-T in DDR memory systems?
The ISL6530CRZ-T serves as a dual synchronous buck PWM controller that independently regulates VDDQ (2.5V DDR core supply) and VTT (termination voltage), while generating VREF (½×VDDQ) for DDR differential signaling. Its integrated rDS(ON) overcurrent protection, 300kHz phase-shifted oscillators, and V2_SD sleep mode make it purpose-built for DDR2 memory power delivery in computing and graphics platforms. The ISL6530CRZ-T eliminates need for external current-sense resistors and supports fast transient response critical for high-speed memory operation.
How does the ISL6530CRZ-T achieve VTT tracking to VREF, and what is the accuracy?
The ISL6530CRZ-T derives VREF directly from SENSE1 via an internal precision resistor divider, ensuring VREF = ½×VDDQ. This same VREF voltage serves as the reference input to the VTT error amplifier, enabling VTT to track VREF with ±30mV absolute accuracy over temperature and line variations. The tracking is maintained during soft-start and normal operation, and the V2_SD pin activates a low-power window regulator to preserve VTT at ½×VDDQ during sleep mode. The ISL6530CRZ-T achieves this without external components, simplifying design and improving reliability.
What package type and thermal characteristics does the ISL6530CRZ-T use?
The ISL6530CRZ-T is packaged in a 32-lead, 5mm × 5mm QFN with exposed thermal pad (drawing L32.5x5), RoHS-compliant and Pb-free. Its thermal resistance is θJA = 33°C/W and θJC = 4°C/W, significantly lower than the SOIC variant (θJA = 65°C/W), enabling higher continuous output current in thermally constrained layouts. The exposed pad must be soldered to a dedicated PCB thermal plane for optimal performance. The ISL6530CRZ-T's QFN package supports compact, high-density DDR power designs while maintaining robust thermal management.
Does the ISL6530CRZ-T support S3 sleep mode, and how is it implemented?
Yes, the ISL6530CRZ-T supports S3 sleep mode via the V2_SD pin. When V2_SD is driven high, the main VTT regulator shuts down, turning off both upper and lower MOSFETs, while a dedicated low-power window regulator activates to maintain VTT at approximately ½×VDDQ through the SENSE2 pin. This circuit sustains VTT with ±7% output error and ±10mA load capability, enabling wake-up times under 100µs without re-executing soft-start. During V2_SD assertion, PGOOD is held low. The ISL6530CRZ-T thus meets ACPI S3 requirements while minimizing standby power in DDR2 systems.
What are the key differences between ISL6530CRZ-T and ISL6537IRZ-T?
The ISL6530CRZ-T targets DDR2 with fixed 2.5V VDDQ and rDS(ON) overcurrent sensing, while the ISL6537IRZ-T supports DDR3 with programmable VDDQ (1.5V/1.8V), integrated 2A gate drivers, VRM 11.0 compatibility, and enhanced telemetry. ISL6537IRZ-T uses a different pinout, lacks direct V2_SD sleep mode, and requires external compensation for wider VDDQ range. Neither is pin-compatible; migration requires schematic and layout changes. For existing DDR2 designs, ISL6530CRZ-T remains optimal; ISL6537IRZ-T is intended for new DDR3 implementations where advanced features justify redesign effort.
ISL6530CRZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-VFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Applications:
- Controller, Intel Pentium® III, IV
- Voltage - Input:
- 4.5V ~ 5.5V
- Number of Outputs:
- 2
- Voltage - Output:
- 2.5V
- Operating Temperature:
- 0°C ~ 70°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-QFN (5x5)
ISL6530CRZ-T FAQ
1.How can I place an order for ISL6530CRZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6530CRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6530CRZ-T reliable?
The price and inventory of ISL6530CRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6530CRZ-T is usually 5 days.
3.What payment methods are accepted for ISL6530CRZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6530CRZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6530CRZ-T?
ISL6530CRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6530CRZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6530CRZ-T?
For technical support, including ISL6530CRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6530CRZ-T requirements.
6.How does Aetrix verify that ISL6530CRZ-T is sourced from the original manufacturer or authorized distributors?
All ISL6530CRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6530CRZ-T meets industry standards.
7.What is the process for return or replacement of ISL6530CRZ-T?
All ISL6530CRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL6530CRZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6530CRZ-T part is unused and in its original packaging.
Return procedure for ISL6530CRZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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