Renesas ISL6627CRZ
- Part No.:
- ISL6627CRZ
- Manufacturer:
- Renesas
- Category:
- Special Purpose Regulators
- Package:
- 10-VFDFN Exposed Pad
- Datasheet:
-
ISL6627CRZ.pdf
- Description:
- IC REG CTRLR INTEL 1OUT 10DFN
- Quantity:
- Payment:

- Shipping:

Inventory:4,624
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ISL6627CRZ from Intersil is a VR11.1/VR12-compatible dual N-channel MOSFET driver for synchronous buck converters, delivering 4A sink current on LGATE, 2A source/sink on UGATE/LGATE, and adaptive shoot-through protection with programmable deadtime. It operates from 5V ±10% VCC, supports diode emulation in PSI mode for light-load DCM, and targets core voltage regulation for advanced microprocessors.
For engineers reviewing the ISL6627CRZ datasheet, ISL6627CRZ pinout, ISL6627CRZ application, or ISL6627CRZ equivalent, key selection factors include its 0°C to +70°C ambient rating, 10-lead 3×3 DFN package with exposed thermal pad, integrated 36V bootstrap diode, and compatibility with Intersil VR11.1/VR12 controllers in high-frequency CPU/GPU VRM designs.
Technical Context
The ISL6627CRZ implements an advanced PWM protocol that detects PSI# commands from VR11.1/VR12 controllers to activate diode emulation-turning off LGATE at inductor zero-current crossing to enforce DCM. Its adaptive shoot-through protection monitors UGATE-PHASE and LGATE voltages to dynamically adjust deadtime, while the TD pin enables fixed propagation delay programming (7–40 ns range) for efficiency optimization.
It integrates a 20kΩ high-side gate-to-source resistor to suppress Miller-induced self-turn-on during high dV/dt events, features internal bootstrap diode clamping to prevent capacitor overcharge, and provides undervoltage lockout on VCC with 3.85V POR threshold and 300mV hysteresis-ensuring robust startup and fault recovery in multi-phase VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Supply | 5V ±10%; powers gate drivers and logic; requires low-ESR ceramic decoupling to GND. |
| LGATE Sink Current | 4A; enables fast turn-off of large lower-side MOSFETs in high-current VRMs. |
| UGATE/LGATE Rise/Fall Times | ≤8 ns (10–90%, 3nF load); supports >1 MHz switching without excessive gate drive loss. |
| Adaptive Deadtime | Automatically adjusts based on MOSFET gate thresholds; prevents shoot-through across process/voltage/temp. |
| Diode Emulation Min ON-Time | 330 ns typical; ensures safe DCM operation under light loads without reverse current. |
| Ambient Temp Range | 0°C to +70°C; validated for commercial-grade server/desktop CPU core regulator environments. |
| Bootstrap Diode Rating | 36V (<200ns); withstands transient overshoot during PHASE node ringing in high-dV/dt topologies. |
Pinout & Package
Dual Flat No-Lead (DFN) 10-lead 3×3 mm package with exposed thermal pad (EPAD) soldered to GND plane for enhanced heat dissipation. Pin 1 = UGATE; Pin 10 = PHASE; Pin 8 = NC; EPAD = GND reference and primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 UGATE | Upper gate drive output | Drives gate of high-side N-MOSFET; referenced to PHASE node; includes integrated 20kΩ pull-down. |
| 2 BOOT | Floating bootstrap supply | Connects to bootstrap capacitor (BOOT–PHASE); supplies gate voltage for high-side driver above input rail. |
| 3 TD | Deadtime programming | Resistor-to-GND/VCC selects fixed UGATE/LGATE propagation delay; floating enables adaptive mode. |
| 4 PWM | PWM control input | Accepts tri-level signals (0V/2.5V/5V) to decode VR11.1/VR12 PSI# and normal CCM modes. |
| 5 GND | Bias and power ground | Reference for all signals; return path for VCC, gate currents, and EPAD thermal conduction. |
| 6 LGATE | Lower gate drive output | Drives gate of low-side N-MOSFET; 4A sink capability handles Miller charge injection during high dV/dt. |
| 7 VCC | Bias supply input | 5V ±10% input; powers internal logic and gate drivers; requires local 1–10 µF ceramic decoupling. |
| 9 EN | Enable control | Active-high logic input; disables both gate outputs and reduces IVCC to 1.15 mA in standby. |
| 10 PHASE | Switching node connection | Connects to source of upper MOSFET and drain of lower MOSFET; return path for UGATE drive current. |
| EPAD | Thermal pad / GND | Must be soldered to PCB GND plane via multiple vias; primary thermal path for 10W+ dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| VR11.1/VR12 Protocol Support | Direct interoperability with Intersil multiphase controllers for dynamic phase shedding and PSI#-triggered DCM. |
| Programmable Fixed Deadtime | Selectable 7–40 ns delays via TD pin resistor; enables precise timing tuning for specific MOSFET Qg and layout parasitics. |
| Integrated Bootstrap Schottky Diode | 36V-rated internal diode eliminates external component; reduces BOM count and improves reliability in compact VRMs. |
| Bootstrap Overcharge Prevention | Clamps negative PHASE swing to limit BOOT–PHASE voltage; protects upper driver from overstress during ringing. |
| Low Standby Bias Current | 1.15 mA when EN = Low; minimizes quiescent power in system sleep states without compromising wake-up latency. |
Applications
| Server CPU Core Regulator | GPU Voltage Regulator Module |
|---|---|
Use Scenario: Multi-phase 12V-to-1V VRM supplying Intel Xeon or AMD EPYC processors under dynamic load transients up to 300A. IC Role / Device Role / Timing Role: Dual gate driver controlling high-side/low-side N-MOSFETs per phase; executes VR12-compliant PWM and PSI#-driven diode emulation. Use Value: Enables >90% efficiency at 10A load via DCM, reduces thermal stress on lower FETs through 4A LGATE sink, and maintains stability during 100A/µs load steps using adaptive shoot-through protection. | Use Scenario: High-density 8-phase VRM on AI accelerator card powering NVIDIA A100 GPUs with tight voltage tolerance (±10 mV). IC Role / Device Role / Timing Role: Synchronous rectified buck driver per phase; interfaces with VR12 controller to manage phase interleaving and dynamic voltage scaling. Use Value: Fast 8 ns rise/fall times support >1.2 MHz switching, minimizing output capacitance; programmable deadtime compensates for MOSFET mismatch across phases. |
| Desktop Motherboard VRD | High-Efficiency DC/DC Converter |
Use Scenario: Consumer motherboard VRD12 implementation delivering 1.0–1.4V to desktop CPUs with light-load efficiency requirements. IC Role / Device Role / Timing Role: Gate driver in single- or dual-phase buck stage; activates diode emulation below 20% load to enter DCM. Use Value: Achieves >85% efficiency at 1A load via 330 ns minimum LGATE ON-time control; integrated 20kΩ UGATE–PHASE resistor prevents false turn-on during cold boot. | Use Scenario: Industrial 48V-to-12V intermediate bus converter requiring high reliability and minimal external components. IC Role / Device Role / Timing Role: Primary gate driver in isolated or non-isolated synchronous buck; leverages adaptive deadtime for wide input voltage range (36–60V). Use Value: 36V bootstrap diode rating withstands 48V input transients; undervoltage lockout (3.2–4.4V POR) ensures clean startup without brownout glitches. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous buck MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6627IRZ | Identical functionality and pinout; rated for -40°C to +85°C ambient vs. ISL6627CRZ's 0°C to +70°C. | Suitable for extended-temperature industrial or telecom systems where cold-start operation is required. | Select ISL6627IRZ when operating below 0°C or above 70°C; otherwise ISL6627CRZ offers cost-optimized commercial-grade performance. |
| MP86942DQKT-LF-Z | Monolithic 2-phase controller + driver; integrates PWM logic, current sensing, and MOSFET drivers; no external TD pin programming. | Reduces component count in space-constrained designs but lacks VR11.1/VR12 protocol decoding and PSI#-triggered DCM. | Choose MP86942DQKT-LF-Z for simplified 2-phase VRM integration; retain ISL6627CRZ when strict VR12 compliance, multi-phase scalability, or programmable deadtime is mandatory. |
Compared with ISL6627IRZ, ISL6627CRZ trades extended temperature range for lower cost in commercial applications; compared with MP86942DQKT-LF-Z, it provides discrete driver flexibility, VR12 protocol fidelity, and fine-grained deadtime control essential for high-performance CPU VRMs.
Availability
ISL6627CRZ is available at Aetrix Electronics and suitable for server CPU core regulators, GPU VRMs, and high-efficiency DC/DC converters requiring stable component supply across production lifecycles.
Supply support for ISL6627CRZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Intersil Corporation is a designer of high-performance analog, mixed-signal, and power management semiconductors, with leadership in VRM/VRD solutions for computing infrastructure.
The ISL6627CRZ belongs to Intersil's VR11.1/VR12-compliant MOSFET driver product line, engineered specifically for high-current, high-frequency core voltage regulation in advanced microprocessors and GPUs.
FAQ
What is the maximum switching frequency supported by the ISL6627CRZ?
The ISL6627CRZ supports high-frequency operation up to 1.5 MHz, enabled by 8 ns typical rise/fall times and low propagation delays (14–28 ns). Its 4A LGATE sink current and fast 4 ns LGATE fall time ensure reliable turn-off of large lower-side MOSFETs even at elevated frequencies, making it suitable for modern high-density VRMs where compact magnetics and reduced output capacitance are critical design goals. The ISL6627CRZ achieves this while maintaining adaptive shoot-through protection integrity across temperature and voltage variations.
Does the ISL6627CRZ require an external bootstrap diode?
No, the ISL6627CRZ integrates a 36V-rated internal bootstrap Schottky diode, eliminating the need for an external component. This simplifies PCB layout, reduces BOM count, and improves reliability in high-density VRM designs. The internal diode is designed to work with a standard external bootstrap capacitor connected between BOOT and PHASE pins, and includes overcharge prevention circuitry to clamp negative PHASE node excursions and protect the upper gate driver. This feature is fully functional in the ISL6627CRZ without modification or external additions.
How does the ISL6627CRZ implement diode emulation, and what triggers it?
The ISL6627CRZ implements diode emulation by detecting the PSI# signal sent by compatible Intersil VR11.1 or VR12 controllers on the PWM input pin. Upon receiving this command, it enters diode emulation mode, monitoring inductor current zero-crossing and turning off LGATE to prevent reverse current flow-enforcing discontinuous conduction mode (DCM). The ISL6627CRZ enforces a minimum LGATE ON-time of 330 ns (typical) in this mode to ensure safe operation. This behavior is exclusive to PSI#-triggered operation and does not occur in standard CCM PWM mode.
What is the purpose of the TD pin on the ISL6627CRZ, and how is it configured?
The TD pin on the ISL6627CRZ programs the gate propagation delay mode: connecting it to GND or VCC via a resistor selects fixed deadtime (7–40 ns range), while leaving it floating enables adaptive shoot-through protection. Resistor values from 100kΩ to 910kΩ set precise UGATE–LGATE or LGATE–UGATE delays, allowing optimization for specific MOSFET gate charge and layout parasitics. This configuration directly affects efficiency and shoot-through margin in the ISL6627CRZ-based VRM, and is validated in the datasheet's Table 1 with measured delay values for each resistor option.
Is the ISL6627CRZ pin-compatible with other drivers in the ISL6627 family?
Yes, the ISL6627CRZ is pin-compatible with ISL6627IRZ and all variants in the ISL6627 family, sharing identical 10-lead 3×3 DFN package, pinout, and electrical interface. The only differences are ambient temperature rating (0°C to +70°C for ISL6627CRZ vs. -40°C to +85°C for ISL6627IRZ) and part marking. No PCB layout changes are required when substituting within the family, and all functional features-including VR11.1/VR12 protocol support, deadtime programming, and diode emulation-operate identically across variants. This ensures seamless BOM scalability and qualification reuse.
ISL6627CRZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 10-VFDFN Exposed Pad
- Packaging:
- Tube
- Product Status:
- Obsolete
- Applications:
- Controller, Intel VR11.1, VR12
- Voltage - Input:
- 4.5V ~ 5.5V
- Number of Outputs:
- 1
- Voltage - Output:
- -
- Operating Temperature:
- 0°C ~ 70°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-DFN (3x3)
ISL6627CRZ FAQ
1.How can I place an order for ISL6627CRZ through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL6627CRZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL6627CRZ reliable?
The price and inventory of ISL6627CRZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6627CRZ is usually 5 days.
3.What payment methods are accepted for ISL6627CRZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6627CRZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL6627CRZ?
ISL6627CRZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL6627CRZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL6627CRZ?
For technical support, including ISL6627CRZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6627CRZ requirements.
6.How does Aetrix verify that ISL6627CRZ is sourced from the original manufacturer or authorized distributors?
All ISL6627CRZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6627CRZ meets industry standards.
7.What is the process for return or replacement of ISL6627CRZ?
All ISL6627CRZ units undergo pre-shipment inspection (PSI). If there is an issue with ISL6627CRZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL6627CRZ part is unused and in its original packaging.
Return procedure for ISL6627CRZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ISL6627CRZ Tags

-
TPS51206DSQR
Texas Instruments

-
TPS51200DRCR
Texas Instruments

-
TPS51200DRCT
Texas Instruments

-
TPS62740DSSR
Texas Instruments

-
TPS51100DGQR
Texas Instruments
-
NCP51200MNTXG
onsemi
-
NCP51400MNTXG
onsemi

-
RT9026GSP
Richtek USA Inc.

-
LP2998MRX/NOPB
Texas Instruments

-
TPS51200QDRCRQ1
Texas Instruments

-
DPA423GN-TL
Power Integrations

-
LM10011SD/NOPB
Texas Instruments
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

