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Renesas ISL6627IRZ-T

Part No.:
ISL6627IRZ-T
Manufacturer:
Renesas
Category:
Special Purpose Regulators
Package:
10-VFDFN Exposed Pad
Datasheet:
AetrixISL6627IRZ-T.pdf
Description:
IC REG CTRLR INTEL 1OUT 10DFN
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,339

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Product details

Overview

ISL6627IRZ-T from Intersil is a VR11.1/VR12-compatible dual N-channel MOSFET driver for synchronous buck converters, delivering 4A sink current on LGATE, 2A source/sink on UGATE/LGATE, and adaptive shoot-through protection with programmable deadtime. It enables diode emulation during PSI mode for DCM operation in microprocessor core voltage regulators.

For engineers reviewing the ISL6627IRZ-T datasheet, ISL6627IRZ-T pinout, ISL6627IRZ-T application, or ISL6627IRZ-T equivalent, key selection considerations include its -40°C to +85°C operating range, 10-lead 3×3 DFN package with exposed thermal pad, VR11.1/VR12 protocol support, and integrated 20kΩ high-side gate-to-source resistor for dV/dt immunity.

Technical Context

The ISL6627IRZ-T implements an advanced PWM protocol that detects PSI# commands from VR11.1/VR12 controllers to activate diode emulation, enabling discontinuous conduction mode (DCM) by sensing zero inductor current and turning off LGATE. Its adaptive shoot-through protection monitors UGATE–PHASE and LGATE voltages to dynamically adjust dead time between high- and low-side FET switching transitions.

Deadtime is programmable via the TD pin using external resistors (e.g., 100kΩ to GND yields 25ns LGATE-fall-to-UGATE-rise delay), while floating TD enables adaptive mode. The driver integrates a 36V-rated bootstrap Schottky diode and prevents bootstrap capacitor overcharge during PHASE node negative excursions.

Key Specifications

ParameterValue and Actual Design Meaning
VCC Supply5V ±10% - powers internal logic and gate drivers; requires low-ESR ceramic decoupling to GND.
LGATE Sink Current4A - enables fast turn-off of large lower-side MOSFETs, critical for preventing shoot-through under high dV/dt.
UGATE/LGATE Rise/Fall Times4–8ns (3nF load) - supports >1MHz switching frequencies with minimal gate drive loss.
Propagation DelaystPDHL = 16ns (adaptive), tPDLFUR = 17ns (programmed) - ensures precise timing control for stable CCM/DCM transitions.
Operating Temp Range-40°C to +85°C - qualified for industrial and computing applications requiring extended thermal margin.
Bootstrap Diode Rating36V (<200ns) - withstands transient overshoot during high-frequency PHASE node switching.
Integrated Resistor20kΩ high-side gate-to-source - suppresses self-turn-on caused by input bus dV/dt without external components.

Pinout & Package

ISL6627IRZ-T uses a 10-lead 3×3 mm Dual Flat No-lead (DFN) package with exposed thermal pad (EPAD) soldered to GND for enhanced heat dissipation. Pin 1 (UGATE) to Pin 10 (PHASE) follow standard top-view numbering; EPAD is electrically connected to GND.

Pin/TerminalCircuit RoleDesign Meaning
UGATE (Pin 1)Upper gate drive outputDrives gate of high-side N-MOSFET; referenced to PHASE node, not GND.
BOOT (Pin 2)Floating bootstrap supplyConnects to bootstrap capacitor (BOOT–PHASE); supplies charge for UGATE high-side drive.
TD (Pin 3)Deadtime programmingResistor to GND/VCC sets fixed propagation delay; open = adaptive mode.
PWM (Pin 4)Control inputAccepts tri-state PWM signal from VR controller; interprets PSI# for diode emulation.
GND (Pin 5)Bias and reference groundReference for all signals and power return path; connects to EPAD.
LGATE (Pin 6)Lower gate drive outputDrives gate of low-side N-MOSFET; referenced to GND.
VCC (Pin 7)Bias supply input5V supply for logic and gate drivers; requires local ceramic decoupling.
NC (Pin 8)No connectionNot internally bonded; must remain unconnected.
EN (Pin 9)Enable inputLogic-high (>1.4V) enables driver; logic-low disables both outputs.
PHASE (Pin 10)Switching node connectionConnects to source of upper MOSFET and drain of lower MOSFET; return path for UGATE drive.

Key Features

FeatureDesign Value
VR11.1/VR12 Protocol SupportEnables seamless integration with Intersil multiphase controllers for dynamic voltage scaling and PSI-based light-load optimization.
Diode Emulation ModeActivates DCM at light loads by detecting zero inductor current and disabling LGATE, improving efficiency without external circuitry.
Programmable DeadtimeAllows fine-tuning of UGATE/LGATE overlap margins via TD pin resistor to maximize efficiency across MOSFET gate charge variations.
Integrated Bootstrap DiodeEliminates need for external Schottky diode; rated for 36V transients and includes overcharge prevention for robust bootstrapping.
20kΩ High-Side Gate ResistorPrevents Miller-induced self-turn-on during high-dV/dt startup or transient events without sacrificing drive strength or efficiency.

Applications

Server CPU Core RegulatorAI Accelerator VRM

Use Scenario: High-current, multi-phase buck regulator supplying core voltage to x86 or Arm-based server CPUs with dynamic frequency scaling.

IC Role / Device Role / Timing Role: Dual gate driver controlling high-side/low-side N-MOSFETs per phase; synchronizes with VR12 controller PWM and PSI commands.

Use Value: Adaptive shoot-through protection and diode emulation maintain >90% efficiency from 10% to 100% load, reducing thermal stress on VRM components.

Use Scenario: Compact, high-frequency VRM powering GPU or AI ASIC die with tight voltage tolerance and rapid load transient response.

IC Role / Device Role / Timing Role: Fast-propagation gate driver enabling >1MHz switching; supports diode braking to minimize overshoot during 10A/µs load steps.

Use Value: 4A LGATE sink current and <8ns rise/fall times ensure clean gate waveforms, suppressing ringing and EMI in dense PCB layouts.

Industrial FPGA Power SupplyHigh-Efficiency Telecom DC/DC Module

Use Scenario: Programmable logic device power rail requiring -40°C to +85°C operation, low standby current, and reliable startup under variable input conditions.

IC Role / Device Role / Timing Role: Synchronous rectified buck driver with POR threshold (3.85V rising) and EN-controlled sequencing for system-level power management.

Use Value: Low 1.27mA no-load VCC current and undervoltage lockout prevent erratic behavior during brown-out conditions.

Use Scenario: Isolated or non-isolated telecom brick delivering 12V–1V conversion with emphasis on light-load efficiency and long-term reliability.

IC Role / Device Role / Timing Role: High-efficiency gate driver supporting DCM operation via diode emulation and optimized deadtime for wide-input-range designs.

Use Value: Bootstrap capacitor overcharge prevention and 36V internal diode rating enable stable operation with 48V input transients common in telecom systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IR35201MTRPBFIntegrated PWM controller + driver; supports Intel VR12.5/VR13; no separate TD pin for deadtime tuning.Targeted at single-chip VRM solutions; lacks standalone driver flexibility for custom controller designs.Choose IR35201MTRPBF when consolidating controller and driver functions is preferred over discrete optimization.
LM5113SDX/NOPBHigh-speed dual driver with 5A sink, but no VR protocol awareness, diode emulation, or adaptive shoot-through; requires external deadtime circuitry.Suitable for generic high-frequency DC/DC, not optimized for microprocessor VRM timing requirements.Choose LM5113SDX/NOPB for non-VR applications needing higher peak current and simpler interface, accepting added design complexity.

Compared with IR35201MTRPBF and LM5113SDX/NOPB, the ISL6627IRZ-T uniquely combines VR11.1/VR12 protocol decoding, adaptive shoot-through, and diode emulation in a compact DFN-enabling high-efficiency, low-component-count core regulators without sacrificing timing precision or light-load performance.

Availability

ISL6627IRZ-T is available at Aetrix Electronics and suitable for server CPU core regulators, AI accelerator VRMs, and industrial FPGA power supplies requiring stable component supply, long lifecycle support, and RoHS-compliant packaging.

Supply support for ISL6627IRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Intersil Corporation designs high-performance analog, mixed-signal, and power management semiconductors for industrial, computing, and consumer markets.

The ISL6627IRZ-T belongs to Intersil's VRM driver product line, engineered specifically for high-efficiency, high-current synchronous buck regulation in advanced microprocessor and ASIC power delivery systems.

FAQ

What is the purpose of the TD pin on the ISL6627IRZ-T?

The TD pin on the ISL6627IRZ-T programs deadtime behavior: connecting it to GND or VCC via a resistor selects fixed propagation delay (e.g., 17ns LGATE-fall-to-UGATE-rise), while leaving it floating enables adaptive shoot-through protection. This allows designers to optimize efficiency across varying MOSFET gate charge characteristics without redesigning layout or firmware. The ISL6627IRZ-T datasheet specifies resistor values and resulting delays in Table 1.

Does the ISL6627IRZ-T support diode emulation, and how is it activated?

Yes, the ISL6627IRZ-T supports diode emulation to improve light-load efficiency. It activates automatically upon detecting a PSI# signal from a compatible VR11.1 or VR12 controller on the PWM pin. Once enabled, the ISL6627IRZ-T monitors inductor current zero-crossing and turns off LGATE to enforce discontinuous conduction mode (DCM), eliminating reverse current conduction through the low-side MOSFET.

What is the function of the integrated 20kΩ resistor in the ISL6627IRZ-T?

The ISL6627IRZ-T integrates a 20kΩ resistor between UGATE and PHASE to prevent high-side MOSFET self-turn-on caused by Miller coupling during high dV/dt events at startup or transients. This eliminates the need for an external gate-to-source resistor while maintaining full drive strength and efficiency-verified in typical applications where input bus slew rates exceed 10V/ns.

Can the ISL6627IRZ-T be used with non-Intersil VR controllers?

Yes, the ISL6627IRZ-T operates in standard CCM PWM mode with any controller providing a compatible tri-state PWM signal (0V/2.5V/5V levels). However, VR11.1/VR12-specific features-including PSI-triggered diode emulation and diode braking-require Intersil-compatible controllers. For generic buck applications, the ISL6627IRZ-T delivers robust gate drive with adaptive shoot-through protection independent of controller vendor.

What thermal design considerations apply to the ISL6627IRZ-T package?

The ISL6627IRZ-T uses a 10-lead 3×3 mm DFN with exposed thermal pad (EPAD) requiring direct soldering to a GND plane. Intersil recommends ≥4 thermal vias (0.3mm diameter, spaced ≤0.9mm apart) connecting EPAD to inner/outer GND layers to achieve θJC = 10°C/W. This minimizes junction temperature rise during 4A LGATE sink operation and supports continuous use at +85°C ambient.

ISL6627IRZ-T Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
10-VFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Applications:
Controller, Intel VR11.1, VR12
Voltage - Input:
4.5V ~ 5.5V
Number of Outputs:
1
Voltage - Output:
-
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
10-DFN (3x3)

ISL6627IRZ-T FAQ

1.How can I place an order for ISL6627IRZ-T through Aetrix?

Please submit a Request for Quotation (RFQ) for ISL6627IRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISL6627IRZ-T reliable?

The price and inventory of ISL6627IRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL6627IRZ-T is usually 5 days.

3.What payment methods are accepted for ISL6627IRZ-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL6627IRZ-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISL6627IRZ-T?

ISL6627IRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISL6627IRZ-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISL6627IRZ-T?

For technical support, including ISL6627IRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL6627IRZ-T requirements.

6.How does Aetrix verify that ISL6627IRZ-T is sourced from the original manufacturer or authorized distributors?

All ISL6627IRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL6627IRZ-T meets industry standards.

7.What is the process for return or replacement of ISL6627IRZ-T?

All ISL6627IRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL6627IRZ-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISL6627IRZ-T part is unused and in its original packaging.

Return procedure for ISL6627IRZ-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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