My Inquiry
My Account
Texas Instruments ISO5851DW
- Part No.:
- ISO5851DW
- Manufacturer:
- Texas Instruments
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
ISO5851DW.pdf
- Description:
- DGTL ISO 5.7KV 1CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,905
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ISO5851DW from Texas Instruments is a reinforced isolated gate driver IC for IGBTs and MOSFETs, delivering 2.5-A peak source and 5-A peak sink output current, 76-ns typical propagation delay, 100-kV/μs CMTI, and integrated desaturation (DESAT) fault detection with active Miller clamp. It operates across –40°C to +125°C ambient and targets high-reliability motor drives and solar inverters.
For engineers reviewing the ISO5851DW datasheet, ISO5851DW pinout, ISO5851DW application, or ISO5851DW equivalent, this page delivers verified technical context, real-world design meaning of key specs, validated SOIC-16 pin functions, safety-certified isolation parameters, and two confirmed alternative gate drivers with documented functional trade-offs.
Technical Context
The ISO5851DW implements dual-supply reinforced isolation with independent 3–5.5-V input-side (VCC1) and 15–30-V output-side (VCC2/VEE2) rails, enabling unipolar or bipolar gate drive configurations. Its internal DESAT sensing circuit monitors IGBT collector-emitter voltage via the DESAT pin and triggers a latched fault signal on FLT within 2000 ns.
It features complementary CMOS inputs (IN+, IN−), active output pull-down during UVLO, and a dedicated CLAMP terminal that sinks up to 2.5-A Miller current at ≤80-mV clamping voltage. The device uses capacitive isolation with 5.7-kVRMS withstand rating and meets VDE V 0884-10 (VIOTM = 8000 VPK, VIORM = 2121 VPK) and UL 1577 (5700 VRMS) standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| CMTI | 100 kV/μs minimum - ensures reliable operation in noisy high-dV/dt environments like IGBT-based motor drives and inverters. |
| Output Drive | 2.5-A source / 5-A sink - supports fast switching of medium-power IGBTs (e.g., 600-V/100-A) with low gate charge. |
| Propagation Delay | 76 ns typ, 110 ns max - enables precise timing control in high-frequency PWM systems (e.g., >20 kHz solar inverters). |
| Isolation Rating | 5.7-kVRMS reinforced - certified per VDE V 0884-10 and UL 1577, supporting 1200-V DC bus systems with safety margin. |
| DESAT Threshold | 9.0 V typ (8.3–9.5 V) - detects IGBT overcurrent before thermal runaway, with 330–500 ns leading-edge blanking to reject noise. |
| UVLO Thresholds | VCC1: 2.25 V (rising), VCC2: 13 V (rising) - prevents erratic output behavior during power-up/down sequences. |
| Operating Temp | –40°C to +125°C ambient - qualified for under-hood EV power modules and industrial motor control enclosures. |
Pinout & Package
ISO5851DW is housed in a 16-pin SOIC (DW) package measuring 10.30 mm × 7.50 mm, optimized for creepage/clearance compliance in high-voltage PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| GND1 (Pins 9, 16) | Input-side ground reference | Return path for VCC1 supply and logic inputs; must be star-connected to minimize noise coupling into isolation barrier. |
| IN+ / IN− (Pins 10, 11) | Complementary gate control inputs | CMOS-compatible differential pair enabling robust noise rejection; glitch filter rejects transients <20 ns. |
| RST (Pin 14) | Fault reset input | Low-active pulse ≥800 ns resets latched FLT signal after DESAT event; requires clean, debounced control signal. |
| RDY (Pin 12) | Power-good status indicator | Open-drain output pulled high when both VCC1 and VCC2 are above UVLO thresholds - used for system enable sequencing. |
| FLT (Pin 13) | Fault alarm output | Open-drain, low-active signal asserted during DESAT; blocks isolator input until RST pulse clears latch. |
| OUT (Pin 6) | High-side gate drive output | Drives IGBT/MOSFET gate directly; capable of 2.5-A sourcing and 5-A sinking into 1-nF load at 76-ns delay. |
| CLAMP (Pin 7) | Active Miller clamp terminal | Sinks 2-A Miller current at ≤80 mV above VEE2 - prevents dynamic turn-on during high dV/dt commutation events. |
| DESAT (Pin 2) | Desaturation sense input | Monitors IGBT VCE via external resistor divider; internal comparator triggers fault when voltage exceeds 9.0 V threshold. |
| VCC1 (Pin 15) | Input-side supply | 3–5.5-V rail powering logic, isolation encoder, and UVLO1; quiescent current 2.8–4.5 mA. |
| VCC2 / VEE2 (Pins 5, 1, 8) | Output-side supply terminals | VCC2 (15–30 V) and VEE2 (–15 to 0 V) define gate drive swing; bipolar configuration enables hard clamp to VEE2 during turn-off. |
| GND2 (Pin 3) | Output-side emitter/common reference | Must connect directly to IGBT emitter; serves as return for OUT, CLAMP, DESAT, and VEE2 in unipolar/bipolar topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Reinforced Isolation | 5.7-kVRMS with 8000-VPK transient rating - eliminates need for external isolation components in Class I medical and industrial safety designs. |
| Active Miller Clamp | 2-A clamp current at ≤80 mV above VEE2 - suppresses false turn-on in high-speed SiC/GaN half-bridges without external diodes. |
| Integrated DESAT Protection | Latched fault signaling with 330–500 ns blanking - provides deterministic overcurrent shutdown without software intervention. |
| UVLO with RDY Output | Dual-rail monitoring (VCC1/VCC2) with open-drain RDY - enables safe power sequencing and system-level readiness validation. |
| Noise Immunity | 20-ns input pulse rejection + 100-kV/μs CMTI - maintains signal integrity in EMI-heavy environments like variable-frequency drives. |
Applications
| Industrial Motor Drives | Solar Inverters |
|---|---|
Use Scenario: 3-phase inverter driving 15–75 kW induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Isolated gate driver controlling IGBT half-bridge switches with precise dead-time management and DESAT fault response. Use Value: 76-ns propagation delay enables tight PWM timing control; 100-kV/μs CMTI prevents misfiring during bus transients. |
Use Scenario: String-level DC-AC conversion in utility-scale photovoltaic plants with 1000-V DC input. IC Role / Device Role / Timing Role: Reinforced-isolated driver for 650-V/1200-V IGBTs in NPC and T-type three-level topologies. Use Value: 5.7-kVRMS isolation and 8000-VPK surge rating meet IEC 62109 requirements for PV system safety certification. |
| EV Power Modules | Induction Heating |
Use Scenario: Traction inverter module in hybrid electric vehicles operating at 400–800-V battery voltages. IC Role / Device Role / Timing Role: High-CMTI gate driver for silicon carbide MOSFETs in dual inverter architectures with fast switching (>50 kHz). Use Value: Active Miller clamp prevents spurious turn-on during 100-V/ns dV/dt events; –40°C to +125°C rating supports under-hood placement. |
Use Scenario: Resonant half-bridge in commercial kitchen induction cooktops requiring 20–100 kHz switching. IC Role / Device Role / Timing Role: Isolated driver for 1200-V IGBTs managing zero-voltage switching transitions with minimal dead-time uncertainty. Use Value: 2.5-A/5-A drive strength ensures rapid gate charging/discharging; short propagation skew (<20 ns) improves phase matching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si827x (Si8273BD-IS) | Lower peak output (4-A sink), no integrated DESAT, 5-kVRMS isolation, 35-V max VDD2 | Lacks active fault protection; requires external DESAT circuitry and higher BOM count | Choose for cost-sensitive, lower-power (<5 kW) applications where full DESAT integration is not required |
| UCC5390SCD | Higher drive (5-A source/5-A sink), 100-kV/μs CMTI, but only 3.75-kVRMS isolation and no Miller clamp | Not certified for reinforced isolation; unsuitable for medical or high-voltage industrial safety-critical use | Prefer for non-safety-critical, high-speed SiC gate driving where compact size and speed outweigh isolation robustness |
Compared with ISO5851DW, Si8273BD-IS offers lower cost but requires external fault handling, while UCC5390SCD delivers higher drive strength yet lacks reinforced isolation and active Miller clamping - making ISO5851DW the only option meeting full IEC 61800-5-1 and UL 62368-1 requirements for 1200-V systems.
Availability
ISO5851DW is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and EV power modules requiring stable component supply, long-term lifecycle support, and certified reinforced isolation.
Supply support for ISO5851DW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and high-reliability power management solutions, with decades of expertise in isolation technology.
The ISO5851DW belongs to TI's reinforced isolated gate driver product line, engineered specifically for high-voltage IGBT and MOSFET control in safety-critical industrial, automotive, and renewable energy systems.
FAQ
What is the maximum output supply voltage range supported by the ISO5851DW?
The ISO5851DW supports an output-side supply range of VCC2 = 15 V to 30 V and VEE2 = –15 V to 0 V, enabling both unipolar (e.g., 15 V/0 V) and bipolar (e.g., 15 V/–8 V) gate drive configurations. This flexibility allows optimal gate voltage selection for IGBT saturation and MOSFET RDS(on) minimization while maintaining safe operation within absolute maximum ratings.
How does the ISO5851DW implement desaturation protection, and what is its response time?
The ISO5851DW monitors IGBT collector-emitter voltage via the DESAT pin using an internal comparator with a 9.0-V typical threshold. Upon detection, it drives OUT low within 415 ns (10% point) and asserts FLT low within 2420 ns. The fault latch remains active until cleared by a low pulse on RST, ensuring fail-safe shutdown without software dependency - a critical feature in the ISO5851DW for protecting high-value power stages.
Does the ISO5851DW require external components for Miller clamp functionality?
No. The ISO5851DW integrates a 2-A active Miller clamp on the CLAMP pin, which sinks gate current at ≤80 mV above VEE2 during high dV/dt events. Unlike discrete clamp solutions, this eliminates external diodes and resistors, reduces layout complexity, and ensures consistent clamping performance across temperature - a core capability built into the ISO5851DW architecture.
What safety certifications apply to the ISO5851DW, and which standards do they cover?
The ISO5851DW holds VDE V 0884-10 (reinforced isolation, VIOTM = 8000 VPK), UL 1577 (5700 VRMS, 1 min), CSA Component Acceptance Notice 5A, CQC GB4943.1-2011, and TUV EN 61010-1/EN 60950-1. These certifications validate its suitability for end equipment complying with IEC 61800-5-1 (drives), IEC 62109 (PV inverters), and IEC 60601-1 (medical), all directly applicable to the ISO5851DW's rated performance.
Can the ISO5851DW operate with a single-ended (unipolar) output supply?
Yes. The ISO5851DW supports unipolar output supplies (e.g., VCC2 = 15 V, VEE2 = GND2) and uses its integrated CLAMP pin to provide active Miller current sinking. In this mode, the CLAMP terminal connects directly to the IGBT gate, preventing dynamic turn-on during high-voltage transients - a fully supported configuration explicitly documented for the ISO5851DW in TI's datasheet Section 5.
ISO5851DW Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5700Vrms
- Common Mode Transient Immunity (Min):
- 100kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 110ns, 110ns
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- 20ns, 20ns
- Current - Output High, Low:
- 1.5A, 3.4A
- Current - Peak Output:
- 2.7A, 5.5A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 15V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
ISO5851DW FAQ
1.How can I place an order for ISO5851DW through Aetrix?
Please submit a Request for Quotation (RFQ) for ISO5851DW on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISO5851DW reliable?
The price and inventory of ISO5851DW are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISO5851DW is usually 5 days.
3.What payment methods are accepted for ISO5851DW?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISO5851DW transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISO5851DW?
ISO5851DW orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISO5851DW order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISO5851DW?
For technical support, including ISO5851DW datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISO5851DW requirements.
6.How does Aetrix verify that ISO5851DW is sourced from the original manufacturer or authorized distributors?
All ISO5851DW products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISO5851DW meets industry standards.
7.What is the process for return or replacement of ISO5851DW?
All ISO5851DW units undergo pre-shipment inspection (PSI). If there is an issue with ISO5851DW, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISO5851DW part is unused and in its original packaging.
Return procedure for ISO5851DW:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ISO5851DW Tags
.JPG)
-
TLP152(TPL,E
Toshiba Semiconductor and Storage
-
HT0740LG-G
Microchip Technology
-
FOD8314TR2
onsemi
-
1EDI60N12AFXUMA1
Infineon Technologies
-
1EDB7275FXUMA1
Infineon Technologies
-
UCC5350MCDR
Texas Instruments
-
2EDB7259KXUMA1
Infineon Technologies
-
UCC5304DWVR
Texas Instruments
-
SI8261BBC-C-ISR
Skyworks Solutions Inc.
-
HT0440LG-G
Microchip Technology
-
HCPL-0302-500E
Broadcom Limited
-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
