My Inquiry
My Account
Microchip Technology JAN1N4116-1/TR
- Part No.:
- JAN1N4116-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
JAN1N4116-1/TR.pdf
- Description:
- DIODE ZENER 24V DO204AH
- Quantity:
- Payment:
- Shipping:
Inventory:3,766
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N4116-1/TR from Microsemi is a 500 mW, 24.0 V ±5% metallurgically bonded glass Zener diode in DO-35 (DO-204AH) axial-leaded package, qualified to JAN level per MIL-PRF-19500/435 for high-reliability voltage regulation in aerospace and defense power supplies, reference circuits, and overvoltage protection.
For engineers reviewing the JAN1N4116-1/TR datasheet, JAN1N4116-1/TR pinout, JAN1N4116-1/TR application, or JAN1N4116-1/TR equivalent, key selection criteria include its 24.0 V nominal Zener voltage at 250 mA test current, 150 Ω dynamic impedance, 0.01 µA maximum reverse leakage at 18.3 V, and -65 °C to +175 °C operating junction temperature range.
Technical Context
This device operates as a precision shunt voltage regulator with a specified Zener test current (IZT) of 250 mA and exhibits a positive temperature coefficient of +0.090 %/°C - critical for stable biasing in wide-temperature military systems. Its internal metallurgical bond ensures low noise density (1 µV/√Hz typical at low voltages) and radiation hardness per Microsemi MicroNote 050.
The JAN1N4116-1/TR is designed for operation with cathode (banded end) positive relative to anode, requiring proper polarity orientation in circuit layout. It delivers regulated output across broad current ranges (up to 40 mA max Zener current IZM) while maintaining hermetic seal integrity and ESD insensitivity per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 24.0 V at 250 mA test current - defines precise regulation point for feedback loops and reference generation. |
| Power Dissipation PM(AV) | 500 mW at 25 °C - sets thermal design margin; derates linearly to zero at 175 °C ambient. |
| Dynamic Impedance ZZT | 150 Ω at 250 mA - determines regulation stiffness and output voltage variation under load transients. |
| Reverse Leakage IR | 0.01 µA at 18.3 V - ensures minimal error current in high-impedance reference paths. |
| Temp Coefficient αVZ | +0.090 %/°C - enables predictable drift compensation in temperature-critical analog subsystems. |
| Noise Density ND | 1 µV/√Hz (typical) - supports low-noise voltage references in precision instrumentation and ADC biasing. |
| Junction Temp Range | -65 °C to +175 °C - qualifies for extended environmental operation in avionics and space-grade electronics. |
Pinout & Package
DO-35 (DO-204AH) axial-leaded glass package with hermetically sealed construction; cathode identified by single black band on body; leads tin-lead plated and solderable per MIL-STD-750 Method 2026.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Reference ground node | Connected to system ground or lower-potential rail; forms return path for Zener current. |
| Cathode | Regulated output node | Banded end; connected to input supply; maintains 24.0 V above anode when biased above knee current. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/435 JAN qualification | Validated reliability for mission-critical applications including launch vehicle power conditioning and radar bias supplies. |
| Metallurgical bond construction | Enables low noise density (1 µV/√Hz) and inherent radiation hardness without external shielding. |
| Hermetic glass DO-35 package | Prevents moisture ingress and long-term parameter drift in humid or corrosive environments. |
| ESD immunity per MIL-STD-750 | Eliminates need for external ESD protection in handling and board assembly for defense contractors. |
| 1% to 5% voltage tolerance options | Supports both cost-sensitive commercial designs (5%) and precision military calibration (1% via D suffix). |
Applications
| Aerospace Power Conditioning | Defense Radar Bias Supply |
|---|---|
|
Use Scenario: Regulating auxiliary 24 V rails in satellite power distribution units exposed to thermal cycling and radiation. IC Role / Device Role / Timing Role: Shunt voltage reference providing stable bias for op-amps and comparators in telemetry signal chains. Use Value: Maintains ±0.5% regulation over -55 °C to +125 °C due to +0.090 %/°C TC and hermetic sealing. |
Use Scenario: Setting precise threshold voltages for pulse-width modulated RF amplifier gate drivers in airborne radar transceivers. IC Role / Device Role / Timing Role: Zener clamp defining upper limit of gate drive swing to prevent transistor overvoltage failure. Use Value: 150 Ω dynamic impedance ensures <100 mV deviation during 10–100 mA transient load steps. |
| Avionics Reference Circuit | Tactical Radio Voltage Monitor |
|
Use Scenario: Generating stable 24 V reference for analog-to-digital conversion of engine sensor signals in flight control computers. IC Role / Device Role / Timing Role: Precision shunt regulator feeding buffered reference input of 16-bit SAR ADCs. Use Value: 1 µV/√Hz noise density prevents degradation of effective number of bits (ENOB) in high-resolution sensing. |
Use Scenario: Monitoring battery voltage thresholds in manpack radios operating across desert and arctic environments. IC Role / Device Role / Timing Role: Overvoltage/undervoltage detection element in discrete comparator-based monitoring circuit. Use Value: -65 °C to +175 °C junction rating allows direct mounting on PCBs without thermal derating penalties. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4116US-1 | Same 24.0 V Zener voltage and JAN qualification, but in surface-mount DO-213AA package. | Requires rework of PCB layout for SMT assembly; eliminates axial lead routing constraints. | Select when automated assembly, space-constrained layouts, or vibration resistance are prioritized over through-hole serviceability. |
| JANTXV1N4116-1 | Identical electrical specs and DO-35 package, but qualified to JANTXV level (enhanced screening, tighter parametric limits). | Suitable for higher-tier programs requiring extended burn-in, lot traceability, and 100% parametric testing. | Select when program requirements mandate JANTXV-level reliability documentation and screening beyond JAN baseline. |
Compared with JAN1N4116-1/TR, 1N4116US-1 offers identical regulation performance in a compact SMT form factor, while JANTXV1N4116-1 provides stricter process controls and screening for mission-critical subsystems where failure risk must be minimized below JAN thresholds.
Availability
JAN1N4116-1/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, defense radar bias supply, and avionics reference circuit applications requiring stable component supply across extended temperature and radiation environments.
Supply support for JAN1N4116-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JAN1N4116-1/TR belongs to Microsemi's legacy MIL-qualified Zener diode family, engineered specifically for voltage regulation in harsh-environment electronics where long-term stability, radiation tolerance, and military specification compliance are mandatory.
FAQ
What is the Zener voltage tolerance for JAN1N4116-1/TR?
The JAN1N4116-1/TR has a nominal Zener voltage of 24.0 V with a standard tolerance of ±5%, as defined by its JEDEC registration and MIL-PRF-19500/435 qualification. This tolerance applies under thermal equilibrium conditions at 25 °C with 250 mA test current. Tighter tolerances (e.g., ±1%) require alternate part numbers with D suffix, not applicable to this specific JAN1N4116-1/TR variant.
Is JAN1N4116-1/TR RoHS compliant?
No, JAN1N4116-1/TR is not RoHS compliant. Per Microsemi documentation, RoHS-compliant versions (e.g., with e3 suffix) are available only for commercial-grade variants, not for JAN-qualified parts like JAN1N4116-1/TR. The JAN1N4116-1/TR uses traditional tin-lead plating on its axial leads to meet MIL-STD-750 solderability requirements.
What is the maximum Zener current IZM for JAN1N4116-1/TR?
The maximum Zener current IZM for JAN1N4116-1/TR is 40 mA, derived from its 500 mW power rating and 24.0 V Zener voltage (P = V × I → I = 0.5 W / 24 V ≈ 20.8 mA), with margin added per datasheet Table on Page 3. This value assumes operation within thermal limits and accounts for derating above 50 °C lead temperature.
Does JAN1N4116-1/TR have a specified noise density?
Yes, JAN1N4116-1/TR has a specified noise density of 1 µV/√Hz, consistent with the family's behavior at lower Zener voltages (<6.8 V). This value is measured using a 1 kHz–3 kHz bandpass filter at 25 °C ambient and 250 mA test current, enabling use in low-noise analog reference designs where spectral purity is critical.
What is the thermal resistance junction-to-lead (RθJL) for JAN1N4116-1/TR?
The thermal resistance junction-to-lead (RθJL) for JAN1N4116-1/TR is 250 °C/W when mounted with 3/8 inch (10 mm) lead length from the body, per Maximum Ratings table on Page 1 of the datasheet. This value guides heatsinking decisions for continuous operation near rated power dissipation in high-reliability chassis-mounted configurations.
JAN1N4116-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 24 V
- Tolerance:
- ±5%
- Power - Max:
- -
- Impedance (Max) (Zzt):
- 150 Ohms
- Current - Reverse Leakage @ Vr:
- 10 nA @ 18.3 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/435
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
JAN1N4116-1/TR FAQ
1.How can I place an order for JAN1N4116-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N4116-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N4116-1/TR reliable?
The price and inventory of JAN1N4116-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N4116-1/TR is usually 5 days.
3.What payment methods are accepted for JAN1N4116-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N4116-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N4116-1/TR?
JAN1N4116-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N4116-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N4116-1/TR?
For technical support, including JAN1N4116-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N4116-1/TR requirements.
6.How does Aetrix verify that JAN1N4116-1/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N4116-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N4116-1/TR meets industry standards.
7.What is the process for return or replacement of JAN1N4116-1/TR?
All JAN1N4116-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N4116-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N4116-1/TR part is unused and in its original packaging.
Return procedure for JAN1N4116-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N4116-1/TR Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
