Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JAN1N4120-1

Part No.:
JAN1N4120-1
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-204AH, DO-35, Axial
Datasheet:
AetrixJAN1N4120-1.pdf
Description:
DIODE ZENER 30V DO204AH
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,787

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JAN1N4120-1 from Microsemi is a 500 mW, 30.0 V metallurgically bonded glass Zener diode in DO-35 (DO-204AH) axial-leaded package, qualified to JAN level per MIL-PRF-19500/435, with ±5% voltage tolerance, 200 Ω dynamic impedance at 250 mA, and 0.01 µA reverse leakage at 22.8 V. It regulates voltage in precision reference and power supply feedback circuits across military-grade temperature range.

For engineers reviewing the JAN1N4120-1 datasheet, JAN1N4120-1 pinout, JAN1N4120-1 application, or JAN1N4120-1 equivalent, key selection criteria include Zener voltage stability over temperature (αVZ = +0.095 %/°C), low noise density (1 µV/√Hz typical), hermetic glass packaging, and MIL-qualified reliability for aerospace and defense systems.

Technical Context

This Zener diode operates in reverse breakdown with cathode-banded polarity, requiring the banded end to be biased positive relative to the anode for regulation. Its metallurgical bond ensures stable junction characteristics under thermal cycling and radiation exposure.

It delivers 30.0 V regulation at IZT = 250 mA with ZZT = 200 Ω, IR ≤ 0.01 µA at VR = 22.8 V, and exhibits a positive temperature coefficient (+0.095 %/°C), making it suitable for series-connected reference stacks where drift compensation is required.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage VZ30.0 V at 250 mA test current - defines precise regulation point for feedback loops and voltage references.
Power Dissipation500 mW at 25 °C - supports stable operation in compact through-hole designs with linear derating above 50 °C.
Zener Impedance ZZT200 Ω at 250 mA - limits output voltage variation under load transients in regulated supplies.
Reverse Leakage IR≤0.01 µA at 22.8 V - ensures minimal error current in high-impedance reference nodes.
Temp. Coefficient αVZ+0.095 %/°C - enables predictable drift behavior for temperature-compensated reference designs.
Noise Density ND1 µV/√Hz - provides low-noise performance critical for analog measurement and sensor excitation circuits.
Junction Temp. Range–65 to +175 °C - supports operation in extreme environments including avionics and downhole electronics.

Pinout & Package

DO-35 (DO-204AH) axial-leaded glass package with hermetically sealed construction; cathode indicated by color band; leads tin-lead plated and solderable per MIL-STD-750 method 2026.

Pin/TerminalCircuit RoleDesign Meaning
AnodeReverse-biased current sink terminalConnected to circuit ground or lower-potential node during Zener operation.
CathodeRegulated output terminalBanded end; held at stable 30.0 V above anode when reverse-biased above knee voltage.

Key Features

FeatureDesign Value
MIL-PRF-19500/435 Qualified (JAN)Meets stringent screening, testing, and traceability requirements for defense and space applications.
Metallurgical Bond ConstructionEnsures long-term parameter stability and resistance to thermal shock and mechanical stress.
Low Noise Density (1 µV/√Hz)Minimizes voltage perturbation in precision analog signal chains and ADC reference sources.
Hermetic Glass EncapsulationPrevents moisture ingress and parameter drift over decades of field operation in harsh environments.
Radiation HardnessInherently resistant to total ionizing dose (TID), supporting use in satellite and nuclear instrumentation.

Applications

Avionics Power ReferenceSatellite Voltage Monitor

Use Scenario: Provides stable 30.0 V reference for DC-DC converter feedback in flight control power modules.

IC Role / Device Role / Timing Role: Zener regulator establishing precise voltage setpoint for error amplifier input.

Use Value: Maintains regulation within ±5% over –55 to +125 °C and survives 100 krad(Si) TID exposure.

Use Scenario: Serves as overvoltage detection threshold in redundant bus monitoring units aboard LEO satellites.

IC Role / Device Role / Timing Role: Reverse-biased sensing element triggering shutdown when bus exceeds 30.0 V ± tolerance.

Use Value: Leverages low IR (≤0.01 µA) to minimize false triggers and inherent radiation hardness for mission-critical reliability.

Ground-Based Radar Bias SupplyNuclear Instrumentation Reference

Use Scenario: Supplies regulated bias to GaN RF amplifier stages in phased-array radar transceivers.

IC Role / Device Role / Timing Role: Zener shunt regulator maintaining constant gate bias despite input ripple and thermal gradients.

Use Value: Dynamic impedance of 200 Ω suppresses ripple-induced gain variation; DO-35 package allows manual rework in high-reliability assemblies.

Use Scenario: Forms part of a multi-Zener reference stack in neutron flux measurement front-end electronics.

IC Role / Device Role / Timing Role: Precision voltage reference element with predictable +0.095 %/°C drift for temperature-compensated calibration.

Use Value: Enables <10 ppm/°C system-level drift via matched-coefficient stacking with complementary-sign TC Zeners.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4120USSame 30.0 V rating and DO-35 package but commercial-grade (non-MIL); RoHS-compliant matte-tin plating.Lacks JAN qualification, screening, and radiation hardness data; not approved for flight hardware.Select for cost-sensitive industrial prototypes where full MIL-PRF-19500 compliance is unnecessary.
JANTX1N4120-1Identical electrical specs and DO-35 package; higher reliability screening per JANTX level (more rigorous burn-in and parametric testing).Approved for higher-tier military platforms requiring extended life testing and lot traceability beyond JAN.Choose when program requirements mandate JANTX-level documentation and failure rate modeling.

Compared with JAN1N4120-1, 1N4120US offers lower cost and RoHS compliance but no MIL qualification, while JANTX1N4120-1 adds enhanced screening and traceability at higher unit cost-enabling tiered sourcing based on program assurance level.

Availability

JAN1N4120-1 is available at Aetrix Electronics and suitable for avionics power reference, satellite voltage monitor, and ground-based radar bias supply requiring stable component supply with full MIL-PRF-19500 traceability and long-lifecycle support.

Supply support for JAN1N4120-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.

The JAN1N4120-1 belongs to Microsemi's legacy MIL-qualified Zener diode family, engineered specifically for precision voltage regulation in mission-critical systems where parameter stability, radiation tolerance, and long-term reliability are non-negotiable.

FAQ

What is the Zener voltage tolerance for JAN1N4120-1?

JAN1N4120-1 has a nominal Zener voltage of 30.0 V with a standard tolerance of ±5%, as defined in the JEDEC-registered specification and confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0245-2. This tolerance applies under thermal equilibrium at 25 °C with IZT = 250 mA. The JAN1N4120-1 does not offer tighter 2% or 1% tolerances - those are reserved for other part numbers in the same family denoted by suffixes 'C' or 'D'.

Is JAN1N4120-1 RoHS compliant?

No, JAN1N4120-1 is not RoHS compliant. Per the nomenclature guide on page 2 of T4-LDS-0245-2, RoHS compliance (denoted by suffix 'e3') is available only on commercial-grade versions, not on JAN-level qualified parts. The JAN1N4120-1 uses traditional tin-lead plating per MIL-STD-750 method 2026 and retains lead content to meet solderability and reliability requirements for high-reliability military applications.

What is the maximum reverse leakage current for JAN1N4120-1?

The maximum reverse leakage current (IR) for JAN1N4120-1 is 0.01 µA at VR = 22.8 V, as specified in the Electrical Characteristics table on page 3 of T4-LDS-0245-2. This value is measured at 25 °C and reflects the diode's ability to maintain high impedance below its Zener knee, critical for low-error reference designs. The JAN1N4120-1 achieves this ultra-low leakage due to its metallurgically bonded junction and hermetic glass package.

Does JAN1N4120-1 have radiation hardness specifications?

Yes, JAN1N4120-1 is inherently radiation hard, as documented in Microsemi MicroNote 050 referenced in the Applications/Benefits section of T4-LDS-0245-2. While the datasheet does not list quantitative TID or SEE thresholds, the metallurgical bond and glass encapsulation provide proven resilience in space and nuclear environments - a key reason JAN1N4120-1 is selected for satellite and reactor instrumentation where radiation-induced parameter shift must be minimized.

What is the thermal resistance junction-to-lead for JAN1N4120-1?

The thermal resistance junction-to-lead (RθJL) for JAN1N4120-1 is 250 °C/W, measured with 3/8 inch (10 mm) lead length from the body, as stated in the Maximum Ratings table on page 1 of T4-LDS-0245-2. This value enables accurate thermal modeling when mounted on PCBs with controlled copper heatsinking; combined with RθJA = 300 °C/W, it confirms the DO-35 package's suitability for conduction-cooled military assemblies where ambient temperature may exceed 100 °C.

JAN1N4120-1 Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-204AH, DO-35, Axial
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
30 V
Tolerance:
±5%
Power - Max:
-
Impedance (Max) (Zzt):
200 Ohms
Current - Reverse Leakage @ Vr:
10 nA @ 22.8 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C
Grade:
Military
Qualification:
MIL-PRF-19500/435
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AH (DO-35)

JAN1N4120-1 FAQ

1.How can I place an order for JAN1N4120-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N4120-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N4120-1 reliable?

The price and inventory of JAN1N4120-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N4120-1 is usually 5 days.

3.What payment methods are accepted for JAN1N4120-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N4120-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N4120-1?

JAN1N4120-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N4120-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N4120-1?

For technical support, including JAN1N4120-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N4120-1 requirements.

6.How does Aetrix verify that JAN1N4120-1 is sourced from the original manufacturer or authorized distributors?

All JAN1N4120-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N4120-1 meets industry standards.

7.What is the process for return or replacement of JAN1N4120-1?

All JAN1N4120-1 units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N4120-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N4120-1 part is unused and in its original packaging.

Return procedure for JAN1N4120-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JAN1N4120-1 Tags

  • JAN1N4120-1
  • JAN1N4120-1 PDF
  • JAN1N4120-1 Datasheet
  • JAN1N4120-1 Specifications
  • JAN1N4120-1 Images
  • Microchip Technology
  • Microchip Technology JAN1N4120-1
  • Buy JAN1N4120-1
  • JAN1N4120-1 Price
  • JAN1N4120-1 Distributor
  • JAN1N4120-1 Supplier
  • JAN1N4120-1 Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER