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Microchip Technology JAN1N4123D-1
- Part No.:
- JAN1N4123D-1
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
JAN1N4123D-1.pdf
- Description:
- DIODE ZENER 39V DO204AH
- Quantity:
- Payment:
- Shipping:
Inventory:4,515
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Product details
Overview
JAN1N4123D-1 from Microsemi is a 500 mW, 39.0 V, 1% tolerance metallurgically bonded glass Zener diode in DO-35 (DO-204AH) package, qualified to JANS level per MIL-PRF-19500/435 for high-reliability voltage regulation in aerospace and defense power conditioning circuits.
For engineers reviewing the JAN1N4123D-1 datasheet, JAN1N4123D-1 pinout, JAN1N4123D-1 application, or JAN1N4123D-1 equivalent, key selection factors include its 1% Zener voltage tolerance, 250 mA test current, 200 Ω dynamic impedance at IZT, -65°C to +175°C operating temperature range, and radiation-hardened hermetic construction.
Technical Context
This device operates as a precision shunt voltage regulator with a nominal Zener voltage of 39.0 V at 250 mA test current (IZT), exhibiting a temperature coefficient of +0.095 %/°C and maximum noise density of 1 µV/√Hz. Its metallurgical bond ensures stable breakdown characteristics under thermal cycling and radiation exposure.
The JAN1N4123D-1 is rated for 500 mW average power dissipation at 25 °C, linearly derated to zero at 175 °C, with junction-to-lead thermal resistance of 250 °C/W at 10 mm lead length. It maintains ≤0.01 µA reverse leakage current at VR = 31.2 V and exhibits 200 Ω dynamic impedance (ZZT) at IZT.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 39.0 V ±1% at 250 mA - enables precise reference generation for analog monitoring and feedback loops requiring tight voltage stability. |
| Power Dissipation | 500 mW at 25 °C - supports continuous regulation in compact, conduction-cooled military PCB layouts without forced air. |
| Dynamic Impedance (ZZT) | 200 Ω at IZT - ensures low output impedance for effective ripple suppression in DC-DC converter error amplifiers. |
| Reverse Leakage (IR) | ≤0.01 µA at VR = 31.2 V - minimizes standby current draw in battery-backed systems and high-impedance bias networks. |
| Temperature Range | -65 °C to +175 °C - certified for operation in extreme environments including missile guidance electronics and satellite power subsystems. |
| Noise Density (ND) | 1 µV/√Hz - provides ultra-low noise reference capability for precision instrumentation front-ends and ADC reference buffers. |
| Qualification Level | JANS per MIL-PRF-19500/435 - guarantees full screening, lot traceability, and radiation hardness for space-grade applications. |
Pinout & Package
DO-35 (DO-204AH) axial-leaded hermetically sealed glass package with cathode indicated by band; operated with banded end positive for Zener regulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current sink during forward bias; common return path in shunt regulator topology | Connected to system ground or lowest potential node; must handle full load current plus Zener current in fault conditions. |
| Cathode | Regulated output node; Zener breakdown occurs between cathode and anode | Banded end connects to regulated rail; requires stable thermal path via 10 mm lead length to meet RθJL = 250 °C/W spec. |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgical bond construction | Eliminates interfacial delamination risk under thermal shock and neutron irradiation, ensuring long-term parameter stability in flight hardware. |
| 1% Zener voltage tolerance | Reduces calibration overhead in closed-loop power supplies and eliminates need for post-solder trim resistors in reference designs. |
| Radiation hardness | Inherently hardened per Microsemi MicroNote 050 - validated for total ionizing dose (TID) > 100 krad(Si) without parameter shift. |
| Ultra-low noise density | 1 µV/√Hz at 39 V enables use as low-noise reference in 16-bit+ data acquisition systems without external filtering. |
| MIL-PRF-19500/435 qualification | Includes burn-in, temperature cycling, and parametric screening - meets JANS requirements for Class S space applications. |
Applications
| Avionics Power Monitoring | Satellite DC-DC Reference |
|---|---|
Use Scenario: Real-time bus voltage supervision in flight control computers using discrete comparator-based overvoltage detection. IC Role / Device Role / Timing Role: Shunt reference providing stable 39 V threshold against which sensed bus voltage is compared. Use Value: 1% tolerance ensures trip point accuracy within ±0.39 V across temperature, eliminating false alarms during transient load events. | Use Scenario: Precision voltage reference for isolated error amplifiers in radiation-tolerant 28 V to 5 V DC-DC converters onboard LEO satellites. IC Role / Device Role / Timing Role: Primary Zener reference establishing regulation setpoint for secondary-side feedback loop. Use Value: Metallurgical bond and JANS qualification guarantee no parameter drift after 10 krad(Si) TID exposure, maintaining output regulation within spec over mission lifetime. |
| Military Radar Bias Supply | Nuclear Instrumentation Calibration |
Use Scenario: Stable bias voltage generation for GaN RF power amplifier gate drivers in ground-based radar transmitters. IC Role / Device Role / Timing Role: Zener-regulated supply for negative gate bias rails requiring low-noise, high-temperature stability. Use Value: 1 µV/√Hz noise density prevents AM sideband corruption in 1–10 GHz transmit chains; +0.095 %/°C TC enables <±1% drift from -55°C to +125°C. | Use Scenario: Calibration reference in portable radiation survey meters requiring NIST-traceable voltage standards in field-deployable enclosures. IC Role / Device Role / Timing Role: Primary shunt reference used to calibrate high-impedance electrometer input stages. Use Value: Hermetic DO-35 package and -65°C to +175°C rating allow operation in desert/arctic environments without condensation-induced leakage or parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4123US-1 | Same electrical specs but in surface-mount DO-213AA package; no axial leads | Requires rework of PCB layout for SMT assembly; unsuitable for through-hole prototyping or high-vibration mechanical retention | Select when board space is constrained and automated placement is available; verify thermal pad design for 250 °C/W RθJL equivalence. |
| JANTXV1N4123D | Identical Zener parameters and 1% tolerance, but qualified only to JANTXV level (not JANS); lower screening rigor and no radiation hardness validation | Approved for airborne avionics but not spaceflight or nuclear-hardened systems | Choose for cost-sensitive defense programs where full JANS testing is not mandated by system specification. |
Compared with JAN1N4123D-1, the 1N4123US-1 offers identical regulation performance in a space-saving SMT form factor but sacrifices mechanical robustness and thermal path control, while JANTXV1N4123D reduces procurement cost and lead time at the expense of radiation tolerance and extended environmental screening.
Availability
JAN1N4123D-1 is available at Aetrix Electronics and suitable for avionics power monitoring, satellite DC-DC reference, and military radar bias supply applications requiring stable component supply across extended temperature ranges and radiation environments.
Supply support for JAN1N4123D-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JAN1N4123D-1 belongs to Microsemi's legacy MIL-qualified Zener diode product line, engineered specifically for precision voltage regulation in mission-critical systems where parameter stability under radiation, thermal stress, and long-term aging is non-negotiable.
FAQ
What is the Zener voltage tolerance of JAN1N4123D-1?
JAN1N4123D-1 has a Zener voltage tolerance of ±1%, denoted by the "D" suffix in its nomenclature. This means its nominal 39.0 V Zener voltage is guaranteed to fall between 38.61 V and 39.39 V when measured at 250 mA test current and 25 °C ambient temperature, supporting high-accuracy regulation without post-manufacturing trimming.
Is JAN1N4123D-1 suitable for space applications?
Yes, JAN1N4123D-1 is qualified to JANS level per MIL-PRF-19500/435, including full radiation hardness assurance per Microsemi MicroNote 050. Its metallurgically bonded structure, hermetic DO-35 package, and screening for total ionizing dose >100 krad(Si) make it appropriate for LEO and GEO satellite power subsystems where long-term parameter stability is critical.
What is the maximum reverse leakage current for JAN1N4123D-1?
The maximum reverse leakage current (IR) for JAN1N4123D-1 is 0.01 µA at VR = 31.2 V, as specified in the Electrical Characteristics table on page 3 of the T4-LDS-0245-2 datasheet. This ultra-low leakage supports high-impedance bias networks and battery-powered systems where standby current must be minimized.
How does the temperature coefficient affect JAN1N4123D-1 performance?
JAN1N4123D-1 has a temperature coefficient (αVZ) of +0.095 %/°C, meaning its Zener voltage increases by approximately 37.05 mV per degree Celsius rise above 25 °C. This predictable positive drift allows designers to compensate in feedback networks or select complementary components to achieve net-zero TC in precision references.
Can JAN1N4123D-1 be used in surface-mount designs?
No - JAN1N4123D-1 uses the axial-leaded DO-35 (DO-204AH) package and is not compatible with surface-mount assembly. For SMT equivalents, consider the 1N4123US-1 in DO-213AA package, which shares identical electrical specifications but requires PCB redesign to accommodate its surface-mount footprint and thermal pad requirements.
JAN1N4123D-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 39 V
- Tolerance:
- ±1%
- Power - Max:
- -
- Impedance (Max) (Zzt):
- 200 Ohms
- Current - Reverse Leakage @ Vr:
- 10 nA @ 29.7 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/435
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
JAN1N4123D-1 FAQ
1.How can I place an order for JAN1N4123D-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N4123D-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N4123D-1 reliable?
The price and inventory of JAN1N4123D-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N4123D-1 is usually 5 days.
3.What payment methods are accepted for JAN1N4123D-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N4123D-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N4123D-1?
JAN1N4123D-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N4123D-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N4123D-1?
For technical support, including JAN1N4123D-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N4123D-1 requirements.
6.How does Aetrix verify that JAN1N4123D-1 is sourced from the original manufacturer or authorized distributors?
All JAN1N4123D-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N4123D-1 meets industry standards.
7.What is the process for return or replacement of JAN1N4123D-1?
All JAN1N4123D-1 units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N4123D-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N4123D-1 part is unused and in its original packaging.
Return procedure for JAN1N4123D-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N4123D-1 Tags
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