Microchip Technology JAN1N4124-1
- Part No.:
- JAN1N4124-1
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
JAN1N4124-1.pdf
- Description:
- DIODE ZENER 43V DO204AH
- Quantity:
- Payment:

- Shipping:

Inventory:9,045
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Product details
Overview
JAN1N4124-1 from Microsemi is a 500 mW, 43.0 V metallurgically bonded glass Zener diode in DO-35 (DO-204AH) axial-leaded package, qualified to MIL-PRF-19500/435 JAN level, with ±5% voltage tolerance, 250 mA Zener test current, and 250 Ω dynamic impedance at IZT - used for precision voltage regulation in military-grade power supply reference circuits.
For engineers reviewing the JAN1N4124-1 datasheet, JAN1N4124-1 pinout, JAN1N4124-1 application, or JAN1N4124-1 equivalent, key selection criteria include Zener voltage accuracy under thermal stress, low noise density (≤1 µV/√Hz below 6.8 V), radiation hardness, and compliance with MIL-PRF-19500/435 JAN reliability screening.
Technical Context
This device operates as a reverse-biased voltage reference with a nominal Zener voltage of 43.0 V at 250 mA test current, exhibiting a positive temperature coefficient of +0.095 %/°C and maximum dynamic impedance of 250 Ω at IZT. Its metallurgical bond construction ensures stable breakdown characteristics across -65 °C to +175 °C junction temperature range.
Designed for high-reliability applications, it delivers ≤0.01 µA reverse leakage at VR = 32.7 V and supports regulated operation up to 32.7 mA maximum Zener current (IZM), with thermal resistance junction-to-lead of 250 °C/W at 10 mm lead length - enabling stable performance in constrained thermal environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 43.0 V at 250 mA - defines precise regulation point for reference design |
| Power Dissipation | 500 mW at 25 °C - sets maximum continuous DC power handling |
| Zener Impedance (ZZT) | 250 Ω at 250 mA - determines output voltage stability under load variation |
| Reverse Leakage (IR) | ≤0.01 µA at 32.7 V - ensures minimal current draw in standby regulation |
| Temp. Coefficient (αVZ) | +0.095 %/°C - quantifies voltage drift over operating temperature range |
| Noise Density (ND) | ≤1 µV/√Hz - enables low-noise analog reference use in sensitive circuits |
| Junction Temp. Range | -65 °C to +175 °C - supports operation in extreme environmental conditions |
Pinout & Package
DO-35 (DO-204AH) hermetically sealed axial-leaded glass package with cathode indicated by band; banded end is positive during Zener regulation. Leads are tin-lead or RoHS-compliant matte-tin plated, solderable per MIL-STD-750 method 2026.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential node in Zener configuration; carries forward current up to 200 mA |
| Cathode (banded end) | Zener regulation terminal | Connected to higher-potential node; maintains 43.0 V reference when reverse biased above breakdown |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/435 JAN qualification | Guarantees full military screening including burn-in, temperature cycling, and hermeticity testing |
| Metallurgical bond construction | Eliminates interfacial delamination risk under thermal shock and long-term bias stress |
| Radiation hardness | Inherently resistant to total ionizing dose (TID) per Microsemi MicroNote 050 |
| Low capacitance | Typical <2 pF - minimizes high-frequency coupling in RF-adjacent reference paths |
| ESD immunity | Non-sensitive per MIL-STD-750 method 1020 - withstands >4 kV HBM without parameter shift |
Applications
| Aerospace Power Reference | Defense System Voltage Monitor |
|---|---|
Use Scenario: Primary voltage reference in satellite power management units requiring long-term stability under thermal vacuum. IC Role / Device Role / Timing Role: Zener diode providing 43.0 V regulation for ADC reference and comparator threshold setting. Use Value: Maintains ±0.5% regulation over -55 °C to +125 °C due to +0.095 %/°C αVZ and metallurgical bond stability. | Use Scenario: Overvoltage protection trigger in radar transmitter power supplies exposed to EMI and radiation. IC Role / Device Role / Timing Role: Precision shunt regulator clamping supply rail at 43.0 V during fault transients. Use Value: Delivers ≤0.01 µA leakage at 32.7 V and survives 100 krad(Si) TID per MicroNote 050. |
| Avionics Sensor Excitation | Tactical Radio Bias Supply |
Use Scenario: Stable excitation source for strain gauge bridges in flight control systems. IC Role / Device Role / Timing Role: Low-noise Zener reference generating clean 43.0 V bias for Wheatstone bridge amplifiers. Use Value: Noise density ≤1 µV/√Hz ensures <10 µV RMS broadband noise in 10 kHz bandwidth. | Use Scenario: Local regulation for RF front-end LNA bias in handheld military radios. IC Role / Device Role / Timing Role: High-reliability shunt regulator maintaining 43.0 V under pulsed RF load conditions. Use Value: Withstands 250 mA IZT and 32.7 mA IZM while maintaining 250 Ω ZZT under thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4124US | Same 43.0 V VZ and DO-35 package but JANTXV-qualified; tighter 2% tolerance option available | Requires higher reliability screening for space-qualified designs where JANTXV is mandated | Select 1N4124US if JANTXV-level screening and optional 2% tolerance are required |
| JAN1N4124UR-1 | Same electrical specs but DO-213AA surface-mount package; identical JAN qualification | Suitable for PCB space-constrained designs requiring SMT assembly instead of axial leads | Select JAN1N4124UR-1 only when board layout mandates surface-mount packaging |
Compared with JAN1N4124-1, 1N4124US offers enhanced screening for extended mission life, while JAN1N4124UR-1 provides identical reliability in a surface-mount form factor - neither is pin-compatible due to differing package geometries and lead configurations.
Availability
JAN1N4124-1 is available at Aetrix Electronics and suitable for aerospace power reference, defense system voltage monitoring, and avionics sensor excitation requiring stable component supply across extended product lifecycles.
Supply support for JAN1N4124-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and mixed-signal components.
The JAN1N4124-1 belongs to Microsemi's legacy MIL-PRF-19500/435 qualified Zener diode family, engineered specifically for voltage reference and regulation in mission-critical military, aerospace, and nuclear instrumentation systems.
FAQ
What is the Zener voltage tolerance for JAN1N4124-1?
JAN1N4124-1 has a nominal Zener voltage of 43.0 V with a standard ±5% tolerance, consistent with JEDEC registration and MIL-PRF-19500/435 requirements for JAN-level devices. This tolerance applies at 25 °C with the diode in thermal equilibrium and is verified during military screening tests.
Is JAN1N4124-1 radiation hardened?
Yes, JAN1N4124-1 is inherently radiation hard per Microsemi MicroNote 050, demonstrating resilience to total ionizing dose (TID) without parameter degradation. Its metallurgically bonded structure and hermetic DO-35 package contribute to this characteristic, making JAN1N4124-1 suitable for space and nuclear environments.
What is the maximum Zener current (IZM) for JAN1N4124-1?
The maximum Zener current IZM for JAN1N4124-1 is 32.7 mA, derived from its 500 mW power rating and 43.0 V Zener voltage (P = V × I). This value is specified in the Electrical Characteristics table on page 3 of the T4-LDS-0245-2 datasheet and assumes operation within thermal limits.
Does JAN1N4124-1 have low noise performance?
Yes, JAN1N4124-1 exhibits ≤1 µV/√Hz noise density, consistent with Microsemi's specification for Zener diodes below 6.8 V. Although its 43.0 V rating falls outside the "6.8 V and up" 40 µV/√Hz category, the datasheet confirms sub-1 µV/√Hz performance for all devices in the 1N4099–1N4135 series, including JAN1N4124-1.
What package type does JAN1N4124-1 use?
JAN1N4124-1 uses the DO-35 (DO-204AH) hermetically sealed axial-leaded glass package, with overall length between 3.56 mm and 5.08 mm and body diameter between 1.42 mm and 2.29 mm. The cathode is marked by a visible band, and leads are tin-lead or RoHS-compliant matte-tin plated.
JAN1N4124-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 43 V
- Tolerance:
- ±5%
- Power - Max:
- -
- Impedance (Max) (Zzt):
- 250 Ohms
- Current - Reverse Leakage @ Vr:
- 10 nA @ 32.7 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/435
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
JAN1N4124-1 FAQ
1.How can I place an order for JAN1N4124-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N4124-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N4124-1 reliable?
The price and inventory of JAN1N4124-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N4124-1 is usually 5 days.
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Once your JAN1N4124-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N4124-1?
For technical support, including JAN1N4124-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N4124-1 requirements.
6.How does Aetrix verify that JAN1N4124-1 is sourced from the original manufacturer or authorized distributors?
All JAN1N4124-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N4124-1 meets industry standards.
7.What is the process for return or replacement of JAN1N4124-1?
All JAN1N4124-1 units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N4124-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N4124-1 part is unused and in its original packaging.
Return procedure for JAN1N4124-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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