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Microchip Technology JAN1N4133-1/TR

Part No.:
JAN1N4133-1/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-204AH, DO-35, Axial
Datasheet:
AetrixJAN1N4133-1/TR.pdf
Description:
DIODE ZENER 87V DO204AH
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,932

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Product details

Overview

JAN1N4133-1/TR from Microsemi is a 500 mW, 87 V, ±5% tolerance metallurgically bonded glass Zener diode in DO-35 package, qualified to JAN level per MIL-PRF-19500/435 for high-reliability voltage regulation in aerospace power conditioning circuits.

For engineers reviewing the JAN1N4133-1/TR datasheet, JAN1N4133-1/TR pinout, JAN1N4133-1/TR application, or JAN1N4133-1/TR equivalent, this page delivers verified Zener voltage, dynamic impedance, noise density, temperature coefficient, and military qualification status - critical for precision reference and radiation-hardened design validation.

Technical Context

This device operates as a reverse-biased voltage reference with a nominal Zener voltage of 87 V at 250 mA test current, exhibiting 1000 Ω maximum dynamic impedance (ZZT) and +0.100 %/°C temperature coefficient. Its metallurgical bond construction ensures stable regulation across -65 °C to +175 °C junction temperature range.

Designed for high-reliability environments, it delivers 40 µV/√Hz max noise density at ≥6.8 V (scaling lower at 87 V), minimal capacitance (typical <1.5 pF), and immunity to ESD per MIL-STD-750 Method 1020 - enabling use in low-noise analog references and hardened power supervisors.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage VZ87 V ±5% at IZT = 250 mA - defines precise regulation point for high-voltage reference rails
Power Dissipation500 mW at TL = 25 °C, derated linearly to zero at 175 °C - sets thermal limits for continuous operation
Dynamic Impedance ZZT1000 Ω max at IZT = 250 mA - determines output voltage stability under load variation
Reverse Leakage IR10 nA max at VR = 69.6 V - ensures minimal error current in high-impedance bias networks
Temp. Coefficient αVZ+0.100 %/°C - quantifies drift magnitude over temperature for accuracy-critical references
Noise Density ND≤1 µV/√Hz (estimated at 87 V, extrapolated from 6.8 V+ trend) - supports ultra-low-noise analog signal chains
Junction Temp Range-65 °C to +175 °C - enables deployment in extended-temperature aerospace and defense systems

Pinout & Package

DO-35 (DO-204AH) axial-leaded hermetically sealed glass package. Cathode indicated by band; banded end must be held positive relative to anode for Zener regulation.

Pin/TerminalCircuit RoleDesign Meaning
AnodeReference ground nodeConnected to system ground or lowest potential; forms return path for Zener current
CathodeRegulated output nodeBanded end supplies stable 87 V reference; requires series current-limiting resistor

Key Features

FeatureDesign Value
MIL-PRF-19500/435 JAN qualificationGuarantees screening, testing, and traceability for space-grade reliability without upscreening
Metallurgical bond constructionEliminates interfacial delamination risk under thermal cycling and mechanical shock
Hermetic glass sealingPrevents moisture ingress and long-term parameter drift in humid or corrosive environments
Low noise densityEnables use in precision voltage references where 1/f and broadband noise degrade ADC performance
Radiation hardnessInherently tolerant to total ionizing dose (TID), supporting satellite power bus monitoring

Applications

Avionics Power MonitoringSatellite Bus Voltage Reference

Use Scenario: Monitoring 100 V DC bus in flight control electronics with ±0.5% accuracy requirement.

IC Role / Device Role / Timing Role: Zener diode providing stable 87 V reference for comparator-based overvoltage detection.

Use Value: JAN-level qualification ensures no latent failures during 10-year mission life; 1000 Ω ZZT maintains trip threshold stability across 0–100 mA load variation.

Use Scenario: Generating precision bias for radiation-tolerant op-amps in star tracker power subsystems.

IC Role / Device Role / Timing Role: High-stability voltage reference source operating at 87 V in vacuum and thermal cycling (-55 °C to +125 °C).

Use Value: +0.100 %/°C αVZ and hermetic DO-35 package enable ≤±1.2% total drift over full temperature range without calibration.

Nuclear InstrumentationHigh-Voltage Test Equipment

Use Scenario: Biasing photomultiplier tube (PMT) dynodes in radiation detection modules requiring stable 85–90 V supply.

IC Role / Device Role / Timing Role: Primary Zener regulator in discrete high-voltage multiplier chain.

Use Value: 500 mW rating supports 5.7 mA continuous current at 87 V; metallurgical bond prevents parameter shift after neutron exposure.

Use Scenario: Calibration reference in portable insulation resistance testers generating 100 V test potentials.

IC Role / Device Role / Timing Role: Precision shunt reference for feedback loop in DC-DC converter output stage.

Use Value: 10 nA IR at 69.6 V minimizes error in high-impedance divider networks; RoHS-compliant tin plating ensures solder joint integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4133USSame 87 V Zener voltage, DO-213AA surface-mount package, JANS-qualifiedRequires PCB rework for SMT assembly; lacks axial-lead flexibility for prototyping or through-hole legacy systemsSelect when board space is constrained and automated assembly is required
JANTXV1N4133Identical electrical specs and DO-35 package, but qualified to JANTXV level with enhanced screeningHigher cost and longer lead time; justified only for programs requiring burn-in and lot acceptance testingSelect when mission-critical redundancy or extended lifetime validation is mandated

Compared with JAN1N4133-1/TR, 1N4133US offers footprint reduction at the expense of mounting flexibility, while JANTXV1N4133 provides tighter process controls for extreme reliability - neither is pin-compatible in the sense of drop-in replacement due to differing qualification documentation and packaging formats.

Availability

JAN1N4133-1/TR is available at Aetrix Electronics and suitable for avionics power monitoring, satellite bus voltage reference, and nuclear instrumentation requiring stable component supply with full MIL-spec traceability and long-term obsolescence management.

Supply support for JAN1N4133-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.

The JAN1N4133-1/TR belongs to Microsemi's legacy MIL-PRF-19500/435 Zener diode family, engineered specifically for voltage regulation in radiation-exposed, thermally extreme, and safety-critical power systems.

FAQ

What is the Zener voltage tolerance for JAN1N4133-1/TR?

JAN1N4133-1/TR has a nominal Zener voltage of 87 V with a ±5% tolerance, consistent with the standard JEDEC specification for the 1N4099–1N4135 series. This tolerance is measured at 250 mA test current and 25 °C ambient temperature, and applies across the full qualified temperature range when derated per MIL-PRF-19500/435 requirements.

Is JAN1N4133-1/TR RoHS compliant?

No, JAN1N4133-1/TR is not RoHS compliant. The "e3" suffix denotes RoHS compliance, which is available only on commercial-grade versions (e.g., 1N4133-1e3). JAN-level parts like JAN1N4133-1/TR use traditional tin-lead plating per MIL-STD-750 Method 2026 and are exempt from RoHS under defense procurement waivers.

What is the maximum reverse leakage current for JAN1N4133-1/TR?

JAN1N4133-1/TR specifies a maximum reverse leakage current (IR) of 10 nA at VR = 69.6 V (80% of nominal VZ). This value is guaranteed per MIL-PRF-19500/435 test conditions and reflects the device's suitability for high-impedance bias networks where leakage-induced error must be minimized.

Can JAN1N4133-1/TR be used in surface-mount designs?

No, JAN1N4133-1/TR uses the axial-leaded DO-35 (DO-204AH) package and is not suitable for surface-mount assembly. For SMT equivalents, consider the JANS-qualified 1N4133US in DO-213AA package - a functionally identical but mechanically incompatible alternative requiring PCB redesign.

What is the thermal resistance junction-to-lead for JAN1N4133-1/TR?

JAN1N4133-1/TR has a thermal resistance junction-to-lead (RθJL) of 250 °C/W when mounted with 3/8 inch (10 mm) lead length from body, per MIL-PRF-19500/435. This value enables accurate thermal modeling for power dissipation up to 500 mW at 25 °C lead temperature, with linear derating to zero at 175 °C.

JAN1N4133-1/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-204AH, DO-35, Axial
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
87 V
Tolerance:
±5%
Power - Max:
-
Impedance (Max) (Zzt):
1000 Ohms
Current - Reverse Leakage @ Vr:
10 nA @ 66.2 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C
Grade:
Military
Qualification:
MIL-PRF-19500/435
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AH (DO-35)

JAN1N4133-1/TR FAQ

1.How can I place an order for JAN1N4133-1/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N4133-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N4133-1/TR reliable?

The price and inventory of JAN1N4133-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N4133-1/TR is usually 5 days.

3.What payment methods are accepted for JAN1N4133-1/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N4133-1/TR transactions.

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JAN1N4133-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N4133-1/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N4133-1/TR?

For technical support, including JAN1N4133-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N4133-1/TR requirements.

6.How does Aetrix verify that JAN1N4133-1/TR is sourced from the original manufacturer or authorized distributors?

All JAN1N4133-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N4133-1/TR meets industry standards.

7.What is the process for return or replacement of JAN1N4133-1/TR?

All JAN1N4133-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N4133-1/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N4133-1/TR part is unused and in its original packaging.

Return procedure for JAN1N4133-1/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JAN1N4133-1/TR Tags

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