Microchip Technology JAN1N4133-1/TR
- Part No.:
- JAN1N4133-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
JAN1N4133-1/TR.pdf
- Description:
- DIODE ZENER 87V DO204AH
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JAN1N4133-1/TR from Microsemi is a 500 mW, 87 V, ±5% tolerance metallurgically bonded glass Zener diode in DO-35 package, qualified to JAN level per MIL-PRF-19500/435 for high-reliability voltage regulation in aerospace power conditioning circuits.
For engineers reviewing the JAN1N4133-1/TR datasheet, JAN1N4133-1/TR pinout, JAN1N4133-1/TR application, or JAN1N4133-1/TR equivalent, this page delivers verified Zener voltage, dynamic impedance, noise density, temperature coefficient, and military qualification status - critical for precision reference and radiation-hardened design validation.
Technical Context
This device operates as a reverse-biased voltage reference with a nominal Zener voltage of 87 V at 250 mA test current, exhibiting 1000 Ω maximum dynamic impedance (ZZT) and +0.100 %/°C temperature coefficient. Its metallurgical bond construction ensures stable regulation across -65 °C to +175 °C junction temperature range.
Designed for high-reliability environments, it delivers 40 µV/√Hz max noise density at ≥6.8 V (scaling lower at 87 V), minimal capacitance (typical <1.5 pF), and immunity to ESD per MIL-STD-750 Method 1020 - enabling use in low-noise analog references and hardened power supervisors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 87 V ±5% at IZT = 250 mA - defines precise regulation point for high-voltage reference rails |
| Power Dissipation | 500 mW at TL = 25 °C, derated linearly to zero at 175 °C - sets thermal limits for continuous operation |
| Dynamic Impedance ZZT | 1000 Ω max at IZT = 250 mA - determines output voltage stability under load variation |
| Reverse Leakage IR | 10 nA max at VR = 69.6 V - ensures minimal error current in high-impedance bias networks |
| Temp. Coefficient αVZ | +0.100 %/°C - quantifies drift magnitude over temperature for accuracy-critical references |
| Noise Density ND | ≤1 µV/√Hz (estimated at 87 V, extrapolated from 6.8 V+ trend) - supports ultra-low-noise analog signal chains |
| Junction Temp Range | -65 °C to +175 °C - enables deployment in extended-temperature aerospace and defense systems |
Pinout & Package
DO-35 (DO-204AH) axial-leaded hermetically sealed glass package. Cathode indicated by band; banded end must be held positive relative to anode for Zener regulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Reference ground node | Connected to system ground or lowest potential; forms return path for Zener current |
| Cathode | Regulated output node | Banded end supplies stable 87 V reference; requires series current-limiting resistor |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/435 JAN qualification | Guarantees screening, testing, and traceability for space-grade reliability without upscreening |
| Metallurgical bond construction | Eliminates interfacial delamination risk under thermal cycling and mechanical shock |
| Hermetic glass sealing | Prevents moisture ingress and long-term parameter drift in humid or corrosive environments |
| Low noise density | Enables use in precision voltage references where 1/f and broadband noise degrade ADC performance |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID), supporting satellite power bus monitoring |
Applications
| Avionics Power Monitoring | Satellite Bus Voltage Reference |
|---|---|
Use Scenario: Monitoring 100 V DC bus in flight control electronics with ±0.5% accuracy requirement. IC Role / Device Role / Timing Role: Zener diode providing stable 87 V reference for comparator-based overvoltage detection. Use Value: JAN-level qualification ensures no latent failures during 10-year mission life; 1000 Ω ZZT maintains trip threshold stability across 0–100 mA load variation. | Use Scenario: Generating precision bias for radiation-tolerant op-amps in star tracker power subsystems. IC Role / Device Role / Timing Role: High-stability voltage reference source operating at 87 V in vacuum and thermal cycling (-55 °C to +125 °C). Use Value: +0.100 %/°C αVZ and hermetic DO-35 package enable ≤±1.2% total drift over full temperature range without calibration. |
| Nuclear Instrumentation | High-Voltage Test Equipment |
Use Scenario: Biasing photomultiplier tube (PMT) dynodes in radiation detection modules requiring stable 85–90 V supply. IC Role / Device Role / Timing Role: Primary Zener regulator in discrete high-voltage multiplier chain. Use Value: 500 mW rating supports 5.7 mA continuous current at 87 V; metallurgical bond prevents parameter shift after neutron exposure. | Use Scenario: Calibration reference in portable insulation resistance testers generating 100 V test potentials. IC Role / Device Role / Timing Role: Precision shunt reference for feedback loop in DC-DC converter output stage. Use Value: 10 nA IR at 69.6 V minimizes error in high-impedance divider networks; RoHS-compliant tin plating ensures solder joint integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4133US | Same 87 V Zener voltage, DO-213AA surface-mount package, JANS-qualified | Requires PCB rework for SMT assembly; lacks axial-lead flexibility for prototyping or through-hole legacy systems | Select when board space is constrained and automated assembly is required |
| JANTXV1N4133 | Identical electrical specs and DO-35 package, but qualified to JANTXV level with enhanced screening | Higher cost and longer lead time; justified only for programs requiring burn-in and lot acceptance testing | Select when mission-critical redundancy or extended lifetime validation is mandated |
Compared with JAN1N4133-1/TR, 1N4133US offers footprint reduction at the expense of mounting flexibility, while JANTXV1N4133 provides tighter process controls for extreme reliability - neither is pin-compatible in the sense of drop-in replacement due to differing qualification documentation and packaging formats.
Availability
JAN1N4133-1/TR is available at Aetrix Electronics and suitable for avionics power monitoring, satellite bus voltage reference, and nuclear instrumentation requiring stable component supply with full MIL-spec traceability and long-term obsolescence management.
Supply support for JAN1N4133-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N4133-1/TR belongs to Microsemi's legacy MIL-PRF-19500/435 Zener diode family, engineered specifically for voltage regulation in radiation-exposed, thermally extreme, and safety-critical power systems.
FAQ
What is the Zener voltage tolerance for JAN1N4133-1/TR?
JAN1N4133-1/TR has a nominal Zener voltage of 87 V with a ±5% tolerance, consistent with the standard JEDEC specification for the 1N4099–1N4135 series. This tolerance is measured at 250 mA test current and 25 °C ambient temperature, and applies across the full qualified temperature range when derated per MIL-PRF-19500/435 requirements.
Is JAN1N4133-1/TR RoHS compliant?
No, JAN1N4133-1/TR is not RoHS compliant. The "e3" suffix denotes RoHS compliance, which is available only on commercial-grade versions (e.g., 1N4133-1e3). JAN-level parts like JAN1N4133-1/TR use traditional tin-lead plating per MIL-STD-750 Method 2026 and are exempt from RoHS under defense procurement waivers.
What is the maximum reverse leakage current for JAN1N4133-1/TR?
JAN1N4133-1/TR specifies a maximum reverse leakage current (IR) of 10 nA at VR = 69.6 V (80% of nominal VZ). This value is guaranteed per MIL-PRF-19500/435 test conditions and reflects the device's suitability for high-impedance bias networks where leakage-induced error must be minimized.
Can JAN1N4133-1/TR be used in surface-mount designs?
No, JAN1N4133-1/TR uses the axial-leaded DO-35 (DO-204AH) package and is not suitable for surface-mount assembly. For SMT equivalents, consider the JANS-qualified 1N4133US in DO-213AA package - a functionally identical but mechanically incompatible alternative requiring PCB redesign.
What is the thermal resistance junction-to-lead for JAN1N4133-1/TR?
JAN1N4133-1/TR has a thermal resistance junction-to-lead (RθJL) of 250 °C/W when mounted with 3/8 inch (10 mm) lead length from body, per MIL-PRF-19500/435. This value enables accurate thermal modeling for power dissipation up to 500 mW at 25 °C lead temperature, with linear derating to zero at 175 °C.
JAN1N4133-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 87 V
- Tolerance:
- ±5%
- Power - Max:
- -
- Impedance (Max) (Zzt):
- 1000 Ohms
- Current - Reverse Leakage @ Vr:
- 10 nA @ 66.2 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/435
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
JAN1N4133-1/TR FAQ
1.How can I place an order for JAN1N4133-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N4133-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N4133-1/TR reliable?
The price and inventory of JAN1N4133-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N4133-1/TR is usually 5 days.
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Once your JAN1N4133-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N4133-1/TR?
For technical support, including JAN1N4133-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N4133-1/TR requirements.
6.How does Aetrix verify that JAN1N4133-1/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N4133-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N4133-1/TR meets industry standards.
7.What is the process for return or replacement of JAN1N4133-1/TR?
All JAN1N4133-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N4133-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N4133-1/TR part is unused and in its original packaging.
Return procedure for JAN1N4133-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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