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Microchip Technology JAN1N4134-1/TR
- Part No.:
- JAN1N4134-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
JAN1N4134-1/TR.pdf
- Description:
- DIODE ZENER 91V DO204AH
- Quantity:
- Payment:
- Shipping:
Inventory:5,735
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Product details
Overview
JAN1N4134-1/TR from Microsemi is a 500 mW, 91.0 V ±5% metallurgically bonded glass Zener diode in DO-35 (DO-204AH) axial-leaded package, qualified to JAN level per MIL-PRF-19500/435 for high-reliability military applications. It delivers stable voltage regulation at 250 mA test current with 1200 Ω dynamic impedance, 40 µA max reverse leakage at 73 V, and +0.100 %/°C temperature coefficient.
For engineers reviewing the JAN1N4134-1/TR datasheet, JAN1N4134-1/TR pinout, JAN1N4134-1/TR application, or JAN1N4134-1/TR equivalent, key selection criteria include Zener voltage tolerance, noise density (≤1 µV/√Hz below 6.8 V), thermal resistance (250 °C/W junction-to-lead), radiation hardness, and MIL-qualified reliability level.
Technical Context
This device operates as a precision shunt voltage regulator in reverse-biased breakdown mode, with cathode band marking polarity. Its metallurgical bond construction ensures low noise and stable long-term voltage drift under thermal cycling and radiation exposure.
The JAN1N4134-1/TR is specified for operation across –65 °C to +175 °C junction temperature, with linear power derating from 500 mW at 25 °C ambient to zero at 175 °C, and exhibits minimal capacitance (~1.5 pF typical at 91 V) per Figure 3 of the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 91.0 V ±5% at 250 mA - defines precise regulation point for high-voltage reference circuits |
| Power Dissipation | 500 mW @ 25 °C - sets maximum continuous DC power handling before thermal derating begins |
| Dynamic Impedance ZZT | 1200 Ω @ 250 mA - determines output voltage stability under load current variation |
| Reverse Leakage IR | ≤40 µA @ 73 V - ensures low standby current in high-impedance bias networks |
| Temp. Coefficient αVZ | +0.100 %/°C - quantifies voltage drift over temperature for precision reference design |
| Noise Density ND | ≤1 µV/√Hz - enables low-noise analog references in sensitive instrumentation |
| Junction Temp. Range | –65 °C to +175 °C - supports operation in extreme environmental conditions including aerospace |
Pinout & Package
Package: DO-35 (DO-204AH), hermetically sealed axial-leaded glass case with tin-lead plating; cathode indicated by color band; weight ≈ 0.2 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / Zener cathode reference ground | Connected to circuit ground or lower-potential node when used as shunt regulator |
| Cathode | Zener regulation terminal / input for reverse-bias voltage | Banded end; connected to unregulated supply rail to clamp voltage at 91 V |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/435 JAN qualification | Validated reliability for defense/aerospace systems requiring traceable lot history and screening |
| Metallurgical bond construction | Enables low long-term drift and enhanced radiation hardness per MicroNote 050 |
| Low noise density (≤1 µV/√Hz) | Supports high-fidelity voltage references in precision ADC/DAC biasing and sensor excitation |
| Hermetic glass DO-35 package | Provides moisture immunity and stable parameter retention over 20+ year field life |
| Non-ESD-sensitive per MIL-STD-750 | Eliminates need for ESD handling controls during assembly and field repair |
Applications
| Aerospace Power Monitoring | Defense Radar Bias Supply |
|---|---|
Use Scenario: Monitoring 100 V DC bus in satellite power distribution unit under thermal vacuum and radiation exposure. IC Role / Device Role / Timing Role: Shunt voltage reference for ADC input scaling and overvoltage protection threshold detection. Use Value: Stable 91 V reference enables ±0.5% bus voltage measurement accuracy across –55 °C to +125 °C operating range. | Use Scenario: Providing regulated bias to GaN RF amplifier stages in airborne radar transmitters. IC Role / Device Role / Timing Role: High-voltage Zener clamp ensuring consistent gate bias despite input ripple and temperature swing. Use Value: 1200 Ω dynamic impedance maintains <±0.3 V regulation error under 50 mA load transients. |
| Nuclear Instrumentation | Tactical Radio Receiver Front-End |
Use Scenario: High-stability reference in gamma spectrometer pulse-height analyzer requiring decades-long calibration stability. IC Role / Device Role / Timing Role: Primary voltage reference for charge-to-voltage conversion circuitry in radiation-hardened detector interface. Use Value: Metallurgical bond and hermetic seal ensure <50 ppm/year voltage drift under 10 krad(Si) total ionizing dose. | Use Scenario: Overvoltage protection and reference generation in SDR receiver power management subsystem. IC Role / Device Role / Timing Role: Clamp and reference element in dual-rail LDO feedback network for 90 V analog front-end supply. Use Value: 40 µA reverse leakage at 73 V minimizes quiescent current in battery-backed receive mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4134US-1 | Same electrical specs but in DO-213AA surface-mount package; no axial leads | Requires PCB rework for SMT assembly; unsuitable for through-hole prototyping or high-vibration mounting | Select when automated assembly and board space reduction are prioritized over mechanical robustness |
| JANTXV1N4134-1 | Identical DO-35 package and electrical parameters; qualified to JANTXV level with extended screening | Required for programs mandating JANTXV-level burn-in, thermal shock, and radiation testing | Select when full JANTXV compliance documentation and lot traceability are contractually required |
Compared with JAN1N4134-1/TR, the 1N4134US-1 offers footprint reduction at the cost of mechanical mounting flexibility, while JANTXV1N4134-1 adds screening rigor without altering electrical behavior-enabling trade-offs between cost, reliability assurance, and assembly method.
Availability
JAN1N4134-1/TR is available at Aetrix Electronics and suitable for aerospace power monitoring, defense radar bias supply, and nuclear instrumentation requiring stable component supply with full MIL-spec traceability and long-lifecycle support.
Supply support for JAN1N4134-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N4134-1/TR belongs to Microsemi's legacy MIL-qualified Zener diode family, engineered specifically for precision voltage regulation in mission-critical systems where radiation tolerance, thermal stability, and long-term parametric consistency are mandatory.
FAQ
What is the Zener voltage tolerance for JAN1N4134-1/TR?
JAN1N4134-1/TR has a nominal Zener voltage of 91.0 V with a standard tolerance of ±5%, as defined in the JEDEC-registered specification and confirmed in Table on page 3 of T4-LDS-0245-2 Rev. 1. This tolerance applies at 25 °C with the diode in thermal equilibrium and is verified per MIL-PRF-19500/435 screening requirements.
Is JAN1N4134-1/TR RoHS compliant?
No, JAN1N4134-1/TR is not RoHS compliant. The "e3" RoHS suffix is only available on commercial-grade versions (e.g., 1N4134-1e3); JAN-level parts use traditional tin-lead plating per MIL-STD-750 method 2026 and are exempt from RoHS under defense procurement regulations.
What is the maximum reverse leakage current for JAN1N4134-1/TR?
JAN1N4134-1/TR specifies a maximum reverse leakage current (IR) of 40 µA at 73 V (80% of nominal VZ), measured at 25 °C. This value is listed in the Electrical Characteristics table on page 3 and reflects worst-case leakage under specified test conditions.
Can JAN1N4134-1/TR be used in surface-mount designs?
No, JAN1N4134-1/TR uses the axial-leaded DO-35 (DO-204AH) package and is not suitable for surface-mount assembly. For SMT compatibility, Microsemi offers the functionally identical 1N4134US-1 in DO-213AA package, which shares all electrical parameters but requires re-layout for SMT pads and reflow profile adjustment.
What is the thermal resistance junction-to-lead for JAN1N4134-1/TR?
JAN1N4134-1/TR has a thermal resistance junction-to-lead (RθJL) of 250 °C/W when mounted with 3/8 inch (10 mm) lead length from body, as specified in the Maximum Ratings table on page 1. This value assumes standard lead-forming and soldering practices per MIL-STD-202.
JAN1N4134-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 91 V
- Tolerance:
- ±5%
- Power - Max:
- -
- Impedance (Max) (Zzt):
- 1200 Ohms
- Current - Reverse Leakage @ Vr:
- 10 nA @ 69.2 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/435
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
JAN1N4134-1/TR FAQ
1.How can I place an order for JAN1N4134-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N4134-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N4134-1/TR reliable?
The price and inventory of JAN1N4134-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N4134-1/TR is usually 5 days.
3.What payment methods are accepted for JAN1N4134-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N4134-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N4134-1/TR?
JAN1N4134-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N4134-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N4134-1/TR?
For technical support, including JAN1N4134-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N4134-1/TR requirements.
6.How does Aetrix verify that JAN1N4134-1/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N4134-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N4134-1/TR meets industry standards.
7.What is the process for return or replacement of JAN1N4134-1/TR?
All JAN1N4134-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N4134-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N4134-1/TR part is unused and in its original packaging.
Return procedure for JAN1N4134-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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