Microchip Technology JAN1N4618D-1

Overview

JAN1N4618D-1 from Microsemi is a 500 mW, 2.7 V Zener diode in DO-35 glass package, qualified to JANS level per MIL-PRF-19500/435, with 1% voltage tolerance, 1500 Ω dynamic impedance at 250 mA test current, and max reverse leakage of 0.5 µA at rated voltage - used for precision voltage reference and regulation in aerospace power conditioning circuits.

For engineers reviewing the JAN1N4618D-1 datasheet, JAN1N4618D-1 pinout, JAN1N4618D-1 application, or JAN1N4618D-1 equivalent, key selection factors include its JANS qualification, 1% Zener voltage tolerance, low noise density (1 µV/√Hz), metallurgically bonded construction, and DO-35 axial-leaded hermetic packaging for high-reliability analog reference design.

Technical Context

This device operates as a reverse-biased voltage regulator with a nominal Zener voltage of 2.7 V at 250 mA test current (IZT), exhibiting a temperature coefficient of –0.075 %/°C and dynamic impedance of 1500 Ω. Its metallurgical bond ensures stable junction behavior under thermal cycling and radiation exposure.

Designed for operation across –65 °C to +175 °C junction temperature range, it delivers regulated output with ≤0.5 µA reverse leakage at rated voltage and supports linear derating from 500 mW at 25 °C to zero at 175 °C on standard FR4 PCBs.

Key Specifications

Pinout & Package

DO-35 (DO-204AH) axial-leaded hermetically sealed glass package; cathode indicated by band; banded end is positive during Zener regulation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage reference applications.

Compared with JAN1N4618D-1, the 1N4618US-1 offers identical regulation performance in a smaller footprint but requires SMT process validation, while JANTXV1N4618D-1 reduces qualification cost and lead time at the expense of radiation hardness and extreme temperature screening depth.

Availability

JAN1N4618D-1 is available at Aetrix Electronics and suitable for aerospace power reference, satellite sensor biasing, and nuclear instrumentation requiring stable component supply with full traceability and long-term obsolescence management.

Supply support for JAN1N4618D-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and mixed-signal components.

The 1N46xx-1 series was developed specifically for military and space applications requiring MIL-PRF-19500/435 qualification, low-noise voltage regulation, and long-term parametric stability under extreme environmental stress.

FAQ

What is the Zener voltage tolerance for JAN1N4618D-1?

JAN1N4618D-1 has a Zener voltage tolerance of ±1%, denoted by the "D" suffix in its nomenclature. This tight tolerance is achieved through post-trim screening and applies to its nominal 2.7 V rating at 250 mA test current. The 1% spec ensures consistent performance across lots in mission-critical reference designs where calibration overhead must be minimized. JAN1N4618D-1 maintains this tolerance across its qualified temperature range without additional external compensation.

Is JAN1N4618D-1 suitable for space applications?

Yes, JAN1N4618D-1 is qualified to JANS level per MIL-PRF-19500/435, including full radiation hardness assurance per Microsemi MicroNote 050. It is screened for total ionizing dose (TID), enhanced low-dose-rate sensitivity (ELDRS), and single-event effects (SEE) compliance. Its metallurgically bonded DO-35 construction and hermetic glass seal make JAN1N4618D-1 appropriate for LEO and GEO satellite power and sensor subsystems where long-term reliability under radiation exposure is mandatory.

What is the maximum reverse leakage current for JAN1N4618D-1?

The maximum reverse leakage current (IR) for JAN1N4618D-1 is 0.5 µA at its rated Zener voltage of 2.7 V. This value is specified at 25 °C and reflects worst-case leakage under regulation conditions. Low IR minimizes error current in high-impedance reference divider networks and preserves accuracy in battery-powered or ultra-low-power monitoring circuits. JAN1N4618D-1 maintains IR ≤1.0 µA across its full –65 °C to +175 °C junction temperature range.

Does JAN1N4618D-1 have RoHS compliance?

No, JAN1N4618D-1 is not RoHS compliant. The "e3" RoHS suffix is only available on commercial-grade versions (e.g., 1N4618D-1e3); JAN-level parts retain tin-lead plating per MIL-STD-750 to ensure solderability and reliability under thermal cycling in high-reliability assemblies. JAN1N4618D-1 uses annealed matte-tin plating only in non-JAN variants - the JAN prefix confirms legacy military-spec construction with Pb-containing terminations.

What is the thermal resistance junction-to-lead for JAN1N4618D-1?

JAN1N4618D-1 has a thermal resistance junction-to-lead (RθJL) of 250 °C/W when measured with 3/8 inch (10 mm) lead length from the DO-35 package body. This value assumes standard mounting on FR4 with 1 mm trace width and 25 mm length. RθJL directly impacts safe operating current under sustained power dissipation; for example, at 250 mA regulation current, junction temperature rise above lead temperature is ~62.5 °C. Derating curves in the JAN1N4618D-1 datasheet define absolute maximums based on ambient and layout conditions.