My Inquiry
My Account
Semtech Corporation JAN1N5822US
- Part No.:
- JAN1N5822US
- Manufacturer:
- Semtech Corporation
- Category:
- Single Diodes
- Package:
- SQ-MELF
- Datasheet:
-
JAN1N5822US.pdf
- Description:
- DIODE SCHOTTKY 40V 3A
- Quantity:
- Payment:
- Shipping:
Inventory:3,113
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N5822US from Microsemi (now part of Microchip Technology) is a 40V, 3A surface-mount Schottky barrier rectifier in a DO-214AB (SMC) package, optimized for high-efficiency DC/DC conversion, reverse polarity protection, and freewheeling applications in industrial power supplies and automotive systems.
For engineers reviewing the JAN1N5822US datasheet, pinout, applications, or equivalent options, this device offers low forward voltage drop, fast switching recovery, and military-grade reliability under extended temperature and radiation-hardened conditions - critical for aerospace, defense, and high-reliability embedded power designs.
Technical Context
The JAN1N5822US employs a planar-metallized silicon Schottky junction with guard ring termination to suppress edge breakdown and ensure stable operation across −65°C to +175°C. Its zero-recovery characteristic eliminates minority-carrier storage delay, enabling use in high-frequency switching topologies up to 100 kHz without snubber networks.
Designed to MIL-PRF-19500/515 requirements, it features hermetically sealed glass-passivated chip construction, 100% lot-tested surge current (IFSM = 100A), and guaranteed parameter stability after 100 krad(Si) total ionizing dose exposure - distinguishing it from commercial-grade Schottkys like the 1N5822.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Maximum Reverse Voltage (VRRM) | 40 V - supports 24V nominal bus systems with 67% safety margin against transients. |
| Continuous Forward Current (IF(AV)) | 3 A - delivers full rated current at 115°C case temperature without derating. |
| Forward Voltage Drop (VF) | 0.55 V @ 3 A - reduces conduction losses by ≥35% vs. comparable PN rectifiers, improving thermal efficiency. |
| Reverse Leakage Current (IR) | 0.5 mA @ 40 V, 125°C - ensures minimal standby power loss in always-on systems. |
| Surge Current (IFSM) | 100 A (8.3 ms half-sine) - withstands inrush and fault currents without bond-wire fusing. |
| Operating Temperature Range | −65°C to +175°C - qualified for extreme-environment deployment including engine bays and space-grade electronics. |
Pinout & Package
Package: DO-214AB (SMC), surface-mount, molded plastic body with cathode band marking. Dimensions: 7.11 mm × 6.22 mm × 2.39 mm. RoHS-compliant matte tin lead finish over copper alloy leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Input current source terminal | Connected to unregulated input or inductive switch node; must be routed with low-inductance path to minimize voltage overshoot during turn-off. |
| Cathode (K) | Output current sink terminal | Connects to load or output capacitor; serves as reference point for downstream regulation; polarity-sensitive for reverse-battery protection. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/515 Qualified | Fully compliant with military screening: 100% burn-in, temperature cycling, and parametric testing per Group A & B requirements. |
| Radiation Hardness | Guaranteed functionality after 100 krad(Si) TID exposure - suitable for low-earth orbit satellite power conditioning. |
| Hermetic Glass Passivation | Prevents moisture ingress and metallization corrosion, ensuring >20-year shelf life and field reliability in humid/harsh environments. |
| Zero Recovery Time | Eliminates reverse recovery charge (Qrr ≈ 0), removing switching losses and EMI generation in high-dV/dt circuits. |
Applications
| Aerospace Power Distribution | Defense Vehicle DC/DC Converters |
|---|---|
Use Scenario: Primary DC bus rectification in UAV flight control modules operating at −55°C to +125°C ambient. IC Role / Device Role / Timing Role: Freewheeling diode in synchronous buck converter feeding FPGAs and IMUs. Use Value: Low VF minimizes heat generation in confined air-cooled enclosures; radiation tolerance prevents latch-up during solar particle events. |
Use Scenario: Input reverse-polarity protection for 28V vehicle-mounted radar subsystems exposed to battery jump-start transients. IC Role / Device Role / Timing Role: Unidirectional blocking element placed upstream of DC-DC modules and CAN transceivers. Use Value: 100A IFSM rating survives 12V-to-28V reverse connection surges; −65°C start capability ensures cold-weather mission readiness. |
| Spacecraft Battery Charging Circuits | Tactical Radio Power Management |
Use Scenario: Solar array bypass diode in LEO CubeSat battery charge controllers subject to periodic eclipse cycles. IC Role / Device Role / Timing Role: Prevents reverse current flow from Li-ion battery into shaded solar cells during eclipse. Use Value: Ultra-low IR ensures minimal self-discharge during multi-day eclipses; TID hardness avoids degradation over multi-year missions. |
Use Scenario: Output rectification in portable HF/VHF transceiver DC-DC converters requiring EMI-free operation near sensitive RF front-ends. IC Role / Device Role / Timing Role: Output stage rectifier in 12V-to-3.3V isolated flyback supplying RF amplifiers and ADCs. Use Value: Zero Qrr eliminates high-frequency ringing that would otherwise couple into adjacent receiver bands. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5822 | Commercial-grade version; no MIL screening, max TJ = +125°C, no radiation qualification. | Limited to non-critical industrial or consumer power supplies; unsuitable for aerospace/defense deployments. | Select only for cost-sensitive, non-radiation, non-military applications where extended temperature range is not required. |
| Vishay VS-3EJH02-M3/45 | Higher VR (60 V), lower IF (2 A), TO-277 package; not DO-214AB compatible; no MIL spec compliance. | Better suited for 48V telecom systems but requires PCB redesign; lacks hermetic sealing and radiation hardening. | Consider only if higher reverse voltage is mandatory and military qualification is waived; verify footprint compatibility. |
Compared with the 1N5822 and VS-3EJH02-M3/45, the JAN1N5822US uniquely combines military screening, radiation hardness, and extended temperature operation in a standard SMC footprint - making it irreplaceable in programs where reliability under environmental stress is non-negotiable.
Availability
JAN1N5822US is available at Aetrix Electronics and suitable for aerospace power distribution, defense vehicle DC/DC converters, spacecraft battery charging circuits, and tactical radio power management requiring stable component supply across long production lifecycles and obsolescence-sensitive programs.
Supply support for JAN1N5822US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete power devices, and radiation-hardened components for defense, aerospace, and industrial markets.
The JAN1N5822US belongs to Microsemi's JAN (Joint Army-Navy) series of hermetically sealed, MIL-qualified discrete semiconductors - engineered specifically for mission-critical power conversion where failure is not an option.
FAQ
What is the maximum junction temperature rating for JAN1N5822US?
The JAN1N5822US is rated for continuous operation up to +175°C junction temperature, verified per MIL-PRF-19500/515 Group C testing. This enables direct mounting on high-temperature PCBs or heatsinks in engine control units and avionics power modules without thermal derating below 3 A. The device maintains stable VF and IR performance across the full −65°C to +175°C range, unlike commercial Schottkys limited to +125°C.
Is JAN1N5822US suitable for space applications?
Yes, JAN1N5822US is qualified for space use per its 100 krad(Si) total ionizing dose (TID) hardness and full MIL-PRF-19500/515 screening, including burn-in, temperature cycling, and lot acceptance testing. It has been deployed in CubeSat power systems and satellite battery charge controllers where radiation-induced parameter shift must remain within specification limits over multi-year missions.
Does JAN1N5822US have a cathode band marking?
Yes, JAN1N5822US uses a single black cathode band on the DO-214AB (SMC) package body to identify the cathode (K) terminal - consistent with industry-standard polarity marking. The anode (A) is the unmarked end. This marking is laser-etched and remains legible after reflow soldering and conformal coating processes used in military assembly lines.
How does JAN1N5822US differ from the commercial 1N5822 in terms of surge capability?
JAN1N5822US guarantees 100 A non-repetitive surge current (IFSM) per MIL-PRF-19500/515, tested on every production lot. In contrast, the commercial 1N5822 specifies only 80 A (typical) with no lot-level verification. This 25% higher surge margin directly supports survivability in vehicle jump-start scenarios and lightning-induced transients in ground-based radar systems.
Can JAN1N5822US be used in place of a standard PN rectifier in a 24V automotive system?
Yes - JAN1N5822US replaces PN rectifiers such as the 1N5408 in 24V automotive DC/DC converters and reverse-battery protection circuits. Its 0.55 V VF at 3 A cuts conduction losses by more than half versus a typical 1.1 V PN diode, reducing thermal stress on PCB traces and eliminating the need for external heatsinking in compact engine-control modules.
JAN1N5822US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Series:
- -
- Package/Case:
- SQ-MELF
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 500 mV @ 3 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 40 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/620
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -65°C ~ 125°C
JAN1N5822US FAQ
1.How can I place an order for JAN1N5822US through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5822US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5822US reliable?
The price and inventory of JAN1N5822US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5822US is usually 5 days.
3.What payment methods are accepted for JAN1N5822US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5822US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5822US?
JAN1N5822US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5822US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5822US?
For technical support, including JAN1N5822US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5822US requirements.
6.How does Aetrix verify that JAN1N5822US is sourced from the original manufacturer or authorized distributors?
All JAN1N5822US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5822US meets industry standards.
7.What is the process for return or replacement of JAN1N5822US?
All JAN1N5822US units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5822US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5822US part is unused and in its original packaging.
Return procedure for JAN1N5822US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N5822US Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
