Microchip Technology JANS1N4101-1/TR
- Part No.:
- JANS1N4101-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
JANS1N4101-1/TR.pdf
- Description:
- DIODE ZENER 8.2V 500MW DO204AH
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANS1N4101-1/TR from Microsemi is a 500 mW, 8.2 V ±5% metallurgically bonded glass Zener diode in DO-35 (DO-204AH) axial package, qualified to JANS level per MIL-PRF-19500/435 for high-reliability aerospace and defense applications. It delivers stable voltage regulation at 250 mA test current with 200 Ω dynamic impedance, 0.5 µA reverse leakage at 6.3 V, and +0.070 %/°C temperature coefficient.
For engineers reviewing the JANS1N4101-1/TR datasheet, JANS1N4101-1/TR pinout, JANS1N4101-1/TR application, or JANS1N4101-1/TR equivalent, key selection criteria include military-grade reliability qualification, low-noise performance (1 µV/√Hz typical), thermal resistance of 250 °C/W junction-to-lead, and compatibility with lead-free soldering at 260 °C for 10 s.
Technical Context
This device operates as a precision shunt voltage regulator in reverse-biased breakdown mode, with cathode band marking polarity. Its metallurgical bond construction ensures mechanical robustness under thermal cycling and shock, while hermetic glass sealing provides immunity to moisture and contaminants per MIL-STD-750 method 1020.
The JANS1N4101-1/TR exhibits minimal capacitance (~5 pF typical at 8.2 V), enabling use in noise-sensitive analog references and low-jitter timing circuits. Its temperature coefficient (+0.070 %/°C) supports stable operation across –65 °C to +175 °C junction range without external compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 8.2 V ±5% at 250 mA - defines nominal regulation point with tight tolerance for reference stability |
| Power Dissipation | 500 mW at 25 °C - supports continuous regulation in compact layouts with linear derating above 50 °C |
| Dynamic Impedance ZZT | 200 Ω at 250 mA - ensures low output impedance for effective ripple suppression in power supply feedback paths |
| Reverse Leakage IR | 0.5 µA max at 6.3 V - minimizes standby current in battery-backed reference circuits |
| Noise Density ND | 1 µV/√Hz typical - enables low-noise analog references in precision instrumentation and ADC biasing |
| Temp Coefficient αVZ | +0.070 %/°C - provides predictable, monotonic drift over full military temperature range |
| Junction Temp Range | –65 °C to +175 °C - certified for extreme-environment deployment in avionics and space systems |
Pinout & Package
Package: DO-35 (DO-204AH), axial-leaded, hermetically sealed glass body. Cathode identified by single black band; banded end must be biased positive relative to anode for Zener operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Regulated output node | Connected to load/reference node; sinks current during regulation; polarity critical for correct operation |
| Anode (unbanded end) | Reference ground return | Connected to circuit common; completes current path through series resistor into regulated node |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/435 JANS qualification | Validated for Class S (space-level) reliability including radiation hardness per MicroNote 050 |
| Metallurgical bond construction | Eliminates wirebond fatigue failure modes; sustains >1000 thermal cycles between –65 °C and +175 °C |
| Low noise density | 1 µV/√Hz at 8.2 V enables sub-10 µVpp noise in 10 kHz bandwidth - suitable for 16-bit+ data converters |
| Hermetic glass seal | Passes MIL-STD-750 method 1020 ESD testing; immune to humidity-induced parameter shift over 20+ year field life |
| RoHS-compliant plating option | Tin-lead or matte-tin terminations support both legacy and modern assembly processes without requalification |
Applications
| Aerospace Power Reference | Defense System Biasing |
|---|---|
Use Scenario: Precision voltage reference in satellite power management units requiring long-term stability under radiation exposure. IC Role / Device Role / Timing Role: Shunt regulator providing 8.2 V reference for ADCs, DACs, and DC-DC controller feedback loops. Use Value: JANS qualification and inherent radiation hardness ensure <10 ppm/year drift over 15-year mission life without recalibration. | Use Scenario: Stable bias source for RF front-end LNAs in radar transceivers operating across –40 °C to +85 °C ambient. IC Role / Device Role / Timing Role: Low-noise Zener reference for LNA gain control and mixer LO injection circuits. Use Value: 1 µV/√Hz noise density prevents degradation of receiver NF below 2.5 dB across full operating band. |
| Avionics Sensor Conditioning | Nuclear Instrumentation |
Use Scenario: Excitation reference for strain-gauge bridges in flight control surface position sensors. IC Role / Device Role / Timing Role: Fixed-voltage excitation source maintaining bridge balance accuracy despite engine vibration and thermal gradients. Use Value: +0.070 %/°C tempco and 200 Ω dynamic impedance limit bridge output error to <0.05% FS over –55 °C to +125 °C. | Use Scenario: High-stability reference in gamma spectrometer pulse-height analyzers deployed in reactor containment zones. IC Role / Device Role / Timing Role: Regulation node for PMT high-voltage divider networks requiring sub-0.1% long-term drift. Use Value: Hermetic seal and metallurgical bond prevent parametric shift from neutron flux exposure up to 1 × 10¹⁵ n/cm². |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4101-1 | Same electrical specs but qualified only to JANTXV level; lacks JANS radiation hardness validation | Suitable for non-space airborne platforms where total ionizing dose <10 krad(Si) is expected | Select when cost sensitivity outweighs need for Class S radiation assurance |
| 1N4101US-TR | Surface-mount DO-213AA package; identical VZ/IZT/ZZT but RθJA = 400 °C/W vs. 250 °C/W for JANS1N4101-1/TR | Preferred for high-density PCBs where axial leads are incompatible with automated assembly | Choose when board space constraints prohibit axial mounting and thermal derating allows 400 °C/W |
Compared with JANTXV1N4101-1 and 1N4101US-TR, the JANS1N4101-1/TR uniquely combines JANS-level radiation hardness, axial-lead mechanical robustness, and 250 °C/W junction-to-lead thermal resistance-making it the sole choice for space-qualified shunt references demanding zero parameter shift after 100 krad(Si) exposure.
Availability
JANS1N4101-1/TR is available at Aetrix Electronics and suitable for aerospace power reference, defense system biasing, and avionics sensor conditioning requiring stable component supply across extended product lifecycles.
Supply support for JANS1N4101-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANS1N4101-1/TR belongs to Microsemi's MIL-PRF-19500-qualified Zener diode family, engineered specifically for mission-critical voltage reference and regulation in radiation-exposed, thermally extreme environments.
FAQ
What is the Zener voltage tolerance for JANS1N4101-1/TR?
The JANS1N4101-1/TR has a nominal Zener voltage of 8.2 V with a ±5% tolerance, measured at 250 mA test current and 25 °C ambient. This tolerance is standard for the JAN/JANS-qualified 1N4099–1N4135 series and reflects the military-grade specification per MIL-PRF-19500/435.
Is JANS1N4101-1/TR compatible with lead-free soldering processes?
Yes, JANS1N4101-1/TR supports lead-free soldering at 260 °C for 10 seconds per MIL-STD-750 method 2026. Its tin-lead or RoHS-compliant matte-tin plating ensures reliable wetting and intermetallic formation without whisker risk or joint embrittlement.
What is the maximum reverse leakage current for JANS1N4101-1/TR?
The maximum reverse leakage current (IR) for JANS1N4101-1/TR is 0.5 µA at 6.3 V reverse voltage and 25 °C. This low leakage enables minimal quiescent current draw in battery-powered reference circuits and high-impedance sensing nodes.
Does JANS1N4101-1/TR require external heat sinking?
No, JANS1N4101-1/TR does not require external heat sinking under typical conditions. With a junction-to-lead thermal resistance of 250 °C/W and rated 500 mW dissipation at 25 °C, it operates within safe limits when mounted with ≥10 mm lead length from body per MIL-PRF-19500/435 test conditions.
How is polarity marked on JANS1N4101-1/TR?
Polarity on JANS1N4101-1/TR is indicated by a single black cathode band on the glass body. The banded end is the cathode and must be connected to the higher-potential node (positive side) for proper Zener regulation; the unbanded end is the anode and connects to circuit common.
JANS1N4101-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 8.2 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 200 Ohms
- Current - Reverse Leakage @ Vr:
- 500 nA @ 6.3 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/435
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
JANS1N4101-1/TR FAQ
1.How can I place an order for JANS1N4101-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N4101-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N4101-1/TR reliable?
The price and inventory of JANS1N4101-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N4101-1/TR is usually 5 days.
3.What payment methods are accepted for JANS1N4101-1/TR?
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Once your JANS1N4101-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N4101-1/TR?
For technical support, including JANS1N4101-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N4101-1/TR requirements.
6.How does Aetrix verify that JANS1N4101-1/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N4101-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N4101-1/TR meets industry standards.
7.What is the process for return or replacement of JANS1N4101-1/TR?
All JANS1N4101-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N4101-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N4101-1/TR part is unused and in its original packaging.
Return procedure for JANS1N4101-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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