Microchip Technology JANS1N4114-1/TR
- Part No.:
- JANS1N4114-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
JANS1N4114-1/TR.pdf
- Description:
- DIODE ZENER 20V 500MW DO204AH
- Quantity:
- Payment:

- Shipping:

Inventory:5,101
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Product details
Overview
JANS1N4114-1/TR from Microsemi is a 500 mW, 20.0 V ±5% Zener voltage regulator diode in DO-35 glass axial-leaded package, qualified to JANS level per MIL-PRF-19500/435 for high-reliability aerospace and defense applications. It delivers 15.2 mA maximum Zener current at 25 °C, exhibits 150 Ω dynamic impedance at 250 mA test current, and maintains stable regulation across -65 °C to +175 °C junction temperature range.
For engineers reviewing the JANS1N4114-1/TR datasheet, JANS1N4114-1/TR pinout, JANS1N4114-1/TR application, or JANS1N4114-1/TR equivalent, key selection criteria include its JANS-level radiation-hardened qualification, 1% max reverse leakage at 15.2 V, low 1 μV/√Hz noise density below 6.8 V, and metallurgically bonded construction for thermal stability in harsh-environment power regulation.
Technical Context
This device operates as a precision shunt voltage reference in feedback loops and overvoltage protection circuits. Its Zener breakdown mechanism provides stable regulation with 0.090 %/°C temperature coefficient and 150 Ω dynamic impedance at IZT = 250 mA - critical for maintaining accuracy under varying load and thermal conditions.
The DO-35 hermetically sealed glass package ensures long-term reliability in vacuum, radiation, and high-temperature environments. Internal metallurgical bonding minimizes thermal resistance (RθJL = 250 °C/W) and supports operation up to 175 °C junction temperature without parameter drift.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 20.0 V ±5% at IZT = 250 mA - defines nominal regulation point for precision reference design |
| Power Dissipation | 500 mW at TC = 25 °C - sets maximum continuous thermal load before derating begins at 50 °C |
| Dynamic Impedance ZZT | 150 Ω at IZT = 250 mA - determines output voltage variation under load transients |
| Reverse Leakage IR | ≤0.01 µA at VR = 15.2 V - ensures minimal parasitic current in high-impedance bias networks |
| Temp Coefficient αVZ | +0.090 %/°C - quantifies voltage drift per degree Celsius for thermal error budgeting |
| Noise Density ND | 1 µV/√Hz - enables low-noise analog references in signal conditioning front-ends |
| Junction Temp Range | -65 °C to +175 °C - supports operation in extended-temperature military and space platforms |
Pinout & Package
DO-35 (DO-204AH) axial-leaded glass package with cathode indicated by band; banded end is positive during Zener regulation. Hermetically sealed, tin-lead plated leads solderable per MIL-STD-750 method 2026.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Reference ground node | Connected to system ground or lowest potential point in shunt regulator topology |
| Cathode | Zener regulation output | Banded terminal; supplies regulated 20.0 V when reverse-biased above breakdown threshold |
Key Features
| Feature | Design Value |
|---|---|
| JANS qualification per MIL-PRF-19500/435 | Validated for Class S spaceflight and nuclear-hardened systems requiring zero defect screening |
| Metallurgically bonded construction | Eliminates interfacial delamination risk under thermal cycling and mechanical shock |
| 1 µV/√Hz noise density | Enables use in low-noise instrumentation references where 1/f noise must be minimized |
| Hermetic DO-35 glass package | Prevents moisture ingress and parameter shift over 20+ year service life in sealed enclosures |
| Radiation hardness per MicroNote 050 | Retains electrical parameters after total ionizing dose ≥100 krad(Si) - suitable for LEO missions |
Applications
| Avionics Power Reference | Satellite Bus Voltage Monitor |
|---|---|
Use Scenario: Provides stable 20.0 V reference for ADCs and DACs in flight control computers operating across -55 °C to +125 °C ambient. IC Role / Device Role / Timing Role: Shunt voltage reference in precision analog signal chain. Use Value: JANS qualification and 0.090 %/°C tempco ensure <±0.5% regulation error over full temperature range without calibration. | Use Scenario: Monitors primary bus voltage in CubeSat power distribution units with autonomous fault detection. IC Role / Device Role / Timing Role: Overvoltage clamp and threshold detector in redundant protection circuitry. Use Value: 150 Ω dynamic impedance and 0.01 µA leakage enable fast response to transient surges while minimizing standby current drain. |
| Nuclear Instrumentation | Tactical Radios |
Use Scenario: Biasing photomultiplier tube HV supplies in radiation survey meters deployed in contaminated zones. IC Role / Device Role / Timing Role: High-stability Zener reference for ultra-low-drift HV regulation. Use Value: Inherent radiation hardness and hermetic sealing prevent parametric degradation after 100 krad(Si) exposure. | Use Scenario: Regulating local 20 V rail for RF power amplifier stages in manpack radios subjected to vibration and thermal shock. IC Role / Device Role / Timing Role: Primary shunt regulator in compact, conduction-cooled power module. Use Value: Metallurgical bond and DO-35 mechanical robustness withstand 20 g random vibration per MIL-STD-810G. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4114US-1 | Same Zener voltage and JANS qualification, but in DO-213AA surface-mount package | Requires PCB rework for SMT assembly; no axial-lead compatibility | Select when board space constraints prohibit axial-leaded components |
| JANTXV1N4114-1 | Identical electrical specs and DO-35 package, but qualified only to JANTXV level (not JANS) | Lacks full Class S screening and radiation hardness validation per MicroNote 050 | Select for high-reliability ground-based systems where full JANS testing is not mandated |
Compared with JANS1N4114-1/TR, the 1N4114US-1 offers identical regulation performance in a space-saving SMT form factor, while JANTXV1N4114-1 reduces cost and lead time for non-space applications where JANS-level radiation assurance is unnecessary.
Availability
JANS1N4114-1/TR is available at Aetrix Electronics and suitable for avionics power reference, satellite bus voltage monitor, and nuclear instrumentation requiring stable component supply with guaranteed traceability and long-term obsolescence management.
Supply support for JANS1N4114-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANS1N4114-1/TR belongs to Microsemi's legacy MIL-PRF-19500/435-qualified Zener diode family, engineered specifically for mission-critical voltage regulation in radiation-exposed, high-temperature, and long-lifecycle systems.
FAQ
What is the Zener voltage tolerance for JANS1N4114-1/TR?
JANS1N4114-1/TR has a nominal Zener voltage of 20.0 V with a ±5% tolerance, as specified in the Electrical Characteristics table on page 3 of T4-LDS-0245-2 Rev. 1. This tolerance applies under standard test conditions of 25 °C and IZT = 250 mA, and is consistent across all JAN, JANTX, JANTXV, and JANS reliability levels for this part number.
Is JANS1N4114-1/TR RoHS compliant?
No, JANS1N4114-1/TR is not RoHS compliant. Per the nomenclature guide on page 2 of T4-LDS-0245-2 Rev. 1, the "e3" suffix denotes RoHS compliance, which is available only on commercial-grade versions. The JANS1N4114-1/TR uses tin-lead plating and is manufactured to military specifications that do not require RoHS adherence.
What is the maximum reverse leakage current for JANS1N4114-1/TR?
The maximum reverse leakage current (IR) for JANS1N4114-1/TR is 0.01 µA at VR = 15.2 V, as stated in the Electrical Characteristics table on page 3 of T4-LDS-0245-2 Rev. 1. This ultra-low leakage supports high-impedance bias networks and precision reference applications where parasitic current must be minimized.
Does JANS1N4114-1/TR have radiation hardness certification?
Yes, JANS1N4114-1/TR is inherently radiation hard as described in Microsemi MicroNote 050, referenced in the Applications/Benefits section on page 1 of T4-LDS-0245-2 Rev. 1. It retains full functionality after total ionizing dose exposure ≥100 krad(Si), making it suitable for low-Earth orbit satellite and nuclear instrumentation applications.
What is the thermal resistance junction-to-lead for JANS1N4114-1/TR?
The thermal resistance junction-to-lead (RθJL) for JANS1N4114-1/TR is 250 °C/W, measured at 3/8 inch (10 mm) lead length from body, per the Maximum Ratings table on page 1 of T4-LDS-0245-2 Rev. 1. This value enables accurate thermal modeling when mounted on chassis or heat-conductive fixtures in high-reliability systems.
JANS1N4114-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 20 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 150 Ohms
- Current - Reverse Leakage @ Vr:
- 10 nA @ 15.2 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/435
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
JANS1N4114-1/TR FAQ
1.How can I place an order for JANS1N4114-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N4114-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N4114-1/TR reliable?
The price and inventory of JANS1N4114-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N4114-1/TR is usually 5 days.
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Once your JANS1N4114-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N4114-1/TR?
For technical support, including JANS1N4114-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N4114-1/TR requirements.
6.How does Aetrix verify that JANS1N4114-1/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N4114-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N4114-1/TR meets industry standards.
7.What is the process for return or replacement of JANS1N4114-1/TR?
All JANS1N4114-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N4114-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N4114-1/TR part is unused and in its original packaging.
Return procedure for JANS1N4114-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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