Microchip Technology JANS1N4131-1/TR
- Part No.:
- JANS1N4131-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
JANS1N4131-1/TR.pdf
- Description:
- DIODE ZENER 75V 500MW DO204AH
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANS1N4131-1/TR from Microsemi is a 75 V, 500 mW metallurgically bonded glass Zener diode in DO-35 (DO-204AH) axial-leaded package, qualified to JANS level per MIL-PRF-19500/435 for high-reliability aerospace and defense applications. It delivers ±5% Zener voltage tolerance at 250 mA test current, exhibits 700 Ω dynamic impedance, and maintains stable regulation across -65 °C to +175 °C junction temperature range.
For engineers reviewing the JANS1N4131-1/TR datasheet, JANS1N4131-1/TR pinout, JANS1N4131-1/TR application, or JANS1N4131-1/TR equivalent, key selection criteria include its radiation-hardened construction, low noise density (1 µV/√Hz), hermetic glass sealing, and compliance with military reliability standards for critical voltage reference and regulation tasks.
Technical Context
This device operates as a precision shunt voltage regulator in reverse-biased mode, with cathode band indicating polarity. Its metallurgical bond ensures mechanical stability under thermal cycling and shock, while the DO-35 glass package provides hermeticity and low parasitic capacitance (typical <1.5 pF at 75 V).
The JANS1N4131-1/TR is characterized at 250 mA Zener test current (IZT), with maximum reverse leakage of 10 nA at 60 V (VR), temperature coefficient of +0.100 %/°C, and noise density of 1 µV/√Hz - consistent with low-voltage Zener behavior below 100 V per Microsemi MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 75 V ±5% at 250 mA - defines precise regulation point for high-voltage reference circuits |
| Power Dissipation | 500 mW at 25 °C lead temperature - supports stable operation in constrained thermal environments |
| Dynamic Impedance ZZT | 700 Ω at 250 mA - determines regulation stiffness and output voltage variation under load changes |
| Temp Coefficient αVZ | +0.100 %/°C - enables predictable drift compensation in wide-temperature-range systems |
| Noise Density ND | 1 µV/√Hz - ensures minimal broadband noise injection into sensitive analog references |
| Junction Temp Range | -65 °C to +175 °C - validated for extreme-environment deployment in space and avionics |
| Reverse Leakage IR | 10 nA max at 60 V - guarantees low standby power loss and high impedance in off-state |
Pinout & Package
Package: DO-35 (DO-204AH), axial-leaded, hermetically sealed glass case with tin-lead plating; cathode indicated by single black band; weight ≈ 0.2 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / Zener cathode reference node | Connected to system ground or lower-potential rail; serves as voltage reference return path |
| Cathode | Zener regulation terminal / input node | Banded end; connected to unregulated supply; clamps voltage to 75 V when reverse biased |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgical bond construction | Eliminates interfacial delamination risk during thermal cycling, ensuring long-term parameter stability in flight hardware |
| JANS qualification per MIL-PRF-19500/435 | Validated screening for burn-in, temperature cycling, and life testing - required for Class S space-grade components |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050 - suitable for low-earth orbit missions |
| Low noise density | 1 µV/√Hz at 75 V enables use in precision analog front-ends without added filtering overhead |
| Hermetic glass encapsulation | Prevents moisture ingress and parameter shift over decades - critical for mission-critical longevity |
Applications
| High-Voltage Reference Supply | Avionics Power Monitor |
|---|---|
Use Scenario: Provides stable 75 V reference for ADC biasing and DAC calibration in satellite telemetry systems. IC Role / Device Role / Timing Role: Shunt voltage reference regulating auxiliary supply rail against input fluctuations. Use Value: Maintains ±0.375 V regulation accuracy over -55 °C to +125 °C ambient, enabling traceable metrology-grade measurements. | Use Scenario: Monitors 100 V bus integrity in aircraft flight control power distribution units. IC Role / Device Role / Timing Role: Overvoltage clamp protecting downstream FET drivers and isolation amplifiers. Use Value: Activates at 75 V with <10 nA leakage below threshold, preventing false trips while ensuring fast response to transients. |
| Nuclear Instrumentation Bias | Spacecraft Radiation Sensor Front-End |
Use Scenario: Supplies regulated bias to photomultiplier tube (PMT) anode chains in radiation detection payloads. IC Role / Device Role / Timing Role: High-voltage Zener reference establishing gain-stable PMT dynode ladder potentials. Use Value: Delivers <1 µV/√Hz noise floor and zero parameter shift after 100 krad(Si) TID exposure per MicroNote 050. | Use Scenario: Stabilizes bias for silicon carbide (SiC) particle detectors operating in geosynchronous orbit. IC Role / Device Role / Timing Role: Radiation-hardened shunt regulator maintaining detector depletion voltage under proton fluence. Use Value: Operates continuously at 175 °C junction temperature with no degradation in ZZT or VZ drift beyond spec limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4131-1 | Same electrical specs but qualified to JANTXV level (lower screening rigor than JANS); not radiation-hardness verified | Suitable for ground-test equipment and non-flight avionics where TID tolerance is not required | Select when cost and lead time are prioritized over space qualification and radiation assurance |
| 1N4131US-1 | Same Zener voltage and DO-35 package, but commercial-grade (non-mil-qualified); RoHS-compliant matte-tin plating | Applicable only in benign industrial environments with no ESD, shock, or radiation constraints | Choose for prototyping or commercial subsystems where MIL-PRF-19500 compliance is unnecessary |
Compared with JANS1N4131-1/TR, JANTXV1N4131-1 offers faster procurement and lower cost but lacks radiation hardness validation and full JANS screening; 1N4131US-1 provides RoHS compliance and shorter lead times but excludes hermeticity verification and temperature cycling data required for flight hardware.
Availability
JANS1N4131-1/TR is available at Aetrix Electronics and suitable for high-reliability aerospace power monitoring, satellite telemetry reference supplies, and nuclear instrumentation requiring stable component supply across extended product lifecycles.
Supply support for JANS1N4131-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs and manufactures high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANS1N4131-1/TR belongs to Microsemi's legacy MIL-PRF-19500/435-qualified Zener diode family, engineered specifically for radiation-tolerant, high-temperature voltage regulation in mission-critical systems.
FAQ
What is the Zener voltage tolerance for JANS1N4131-1/TR?
JANS1N4131-1/TR has a nominal Zener voltage of 75 V with a ±5% tolerance, measured at 250 mA test current (IZT) under thermal equilibrium at 25 °C. This tolerance is inherent to the JEDEC-registered 1N4099–1N4135 series and applies across all reliability levels including JANS.
Is JANS1N4131-1/TR radiation hardened?
Yes, JANS1N4131-1/TR is inherently radiation hard as documented in Microsemi MicroNote 050. Its metallurgically bonded structure and hermetic DO-35 glass package provide proven tolerance to total ionizing dose (TID), making it suitable for low-earth orbit and other radiation-exposed environments.
What does the "TR" suffix mean in JANS1N4131-1/TR?
The "TR" suffix in JANS1N4131-1/TR indicates tape-and-reel packaging per EIA-296 standard. This format supports automated placement in high-volume production and is available upon factory consultation for specified quantities.
Can JANS1N4131-1/TR be used in surface-mount designs?
No - JANS1N4131-1/TR uses the axial-leaded DO-35 (DO-204AH) package and is not surface-mount compatible. For SMT equivalents, consider Microsemi's 1N4131UR-1 in DO-213AA or 1PMT4131 in DO-216, which share identical electrical specs but differ in qualification level and packaging.
What is the maximum reverse leakage current for JANS1N4131-1/TR?
JANS1N4131-1/TR specifies a maximum reverse leakage current (IR) of 10 nA at VR = 60 V and 25 °C. This ultra-low leakage ensures minimal power loss and high-impedance operation in precision reference and clamp applications.
JANS1N4131-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 75 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 700 Ohms
- Current - Reverse Leakage @ Vr:
- 10 nA @ 57 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/435
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
JANS1N4131-1/TR FAQ
1.How can I place an order for JANS1N4131-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N4131-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N4131-1/TR reliable?
The price and inventory of JANS1N4131-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N4131-1/TR is usually 5 days.
3.What payment methods are accepted for JANS1N4131-1/TR?
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JANS1N4131-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N4131-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N4131-1/TR?
For technical support, including JANS1N4131-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N4131-1/TR requirements.
6.How does Aetrix verify that JANS1N4131-1/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N4131-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N4131-1/TR meets industry standards.
7.What is the process for return or replacement of JANS1N4131-1/TR?
All JANS1N4131-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N4131-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N4131-1/TR part is unused and in its original packaging.
Return procedure for JANS1N4131-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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