Microchip Technology JANS1N4134C-1/TR

Overview

JANS1N4134C-1/TR from Microsemi is a 91 V, ±2% tolerance, 500 mW metallurgically bonded glass Zener diode in DO-35 package, qualified to JANS level per MIL-PRF-19500/435 for high-reliability aerospace and defense voltage regulation. It delivers stable reference voltage with 1200 Ω dynamic impedance at 250 mA test current and operates across –65 °C to +175 °C junction temperature range.

For engineers reviewing the JANS1N4134C-1/TR datasheet, JANS1N4134C-1/TR pinout, JANS1N4134C-1/TR application, or JANS1N4134C-1/TR equivalent, key selection criteria include Zener voltage tolerance (±2%), radiation-hardened construction, noise density (1 µV/√Hz), and JANS-level qualification for mission-critical analog reference and power-supply feedback circuits.

Technical Context

This device functions as a precision shunt voltage regulator in reverse-biased operation, with cathode band indicating polarity. Its metallurgical bond ensures low thermal resistance (R_θJL = 250 °C/W) and stable long-term Zener voltage drift under thermal cycling.

The JANS1N4134C-1/TR exhibits a positive temperature coefficient of +0.100 %/°C above 50 V, enabling predictable voltage shift over wide temperature ranges, and maintains ≤0.01 µA reverse leakage at 73 V (80% of V_Z), supporting low-power biasing in high-impedance circuits.

Key Specifications

Pinout & Package

DO-35 (DO-204AH) axial-leaded hermetically sealed glass package; cathode indicated by single black band; leads tin-lead plated, solderable per MIL-STD-750 method 2026.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with JANTXV1N4134C-1 and 1N4134C-1/TR, the JANS1N4134C-1/TR provides verified neutron irradiation survivability, full lot-by-lot MIL-STD-883 testing, and guaranteed operation at +175 °C - essential for flight-critical voltage references where failure modes cannot be mitigated by redundancy.

Availability

JANS1N4134C-1/TR is available at Aetrix Electronics and suitable for avionics power monitoring, satellite bus regulation, nuclear instrumentation, and hypersonic vehicle control electronics requiring stable component supply with full traceability and extended temperature performance.

Supply support for JANS1N4134C-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The JANS1N4134C-1/TR belongs to Microsemi's legacy MIL-PRF-19500/435-qualified Zener diode family, engineered specifically for precision voltage reference and regulation in mission-critical systems where radiation tolerance, thermal stability, and long-term parametric consistency are mandatory.

FAQ

What is the Zener voltage tolerance and test current for JANS1N4134C-1/TR?

The JANS1N4134C-1/TR has a nominal Zener voltage of 91 V with a ±2% tolerance, measured at a Zener test current (I_ZT) of 250 mA. This tolerance is achieved through post-assembly screening and is guaranteed across the full qualified temperature range, making JANS1N4134C-1/TR suitable for applications demanding tighter regulation than standard ±5% commercial Zeners.

Is JANS1N4134C-1/TR radiation hardened, and what testing validates this?

Yes, JANS1N4134C-1/TR is inherently radiation hard per Microsemi MicroNote 050, with validated performance up to 100 krad(Si) total ionizing dose. Its metallurgically bonded structure and hermetic DO-35 package eliminate moisture-induced degradation mechanisms, and JANS qualification includes neutron irradiation testing per MIL-PRF-19500/435 - a requirement not met by JANTXV or commercial variants.

What is the maximum reverse leakage current specification for JANS1N4134C-1/TR?

JANS1N4134C-1/TR specifies a maximum reverse leakage current (I_R) of 0.01 µA at 73 V (80% of nominal V_Z). This ultra-low leakage supports high-impedance bias networks and precision reference divider chains where even nanoamp-level errors would degrade accuracy - a key differentiator versus lower-reliability Zener diodes.

Does JANS1N4134C-1/TR require derating at elevated temperatures, and if so, how?

Yes, JANS1N4134C-1/TR must be linearly derated from 500 mW starting at 50 °C lead temperature, reaching zero dissipation at 175 °C. On a typical FR4 board, derating begins at 25 °C ambient, with power reduced by 3.33 mW/°C. This behavior is documented in Figure 2 of the T4-LDS-0245-2 datasheet and applies to all JANS-level devices in the series.

Can JANS1N4134C-1/TR be used in surface-mount designs?

No - JANS1N4134C-1/TR is supplied in the axial-leaded DO-35 (DO-204AH) package and is not compatible with surface-mount assembly. For SMT alternatives, Microsemi offers the 1N4134C-1UR in DO-213AA and 1PMT4134 in DO-216 packages, though neither carries JANS qualification or identical radiation performance.