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Semtech Corporation JANS1N5822US.TR
- Part No.:
- JANS1N5822US.TR
- Manufacturer:
- Semtech Corporation
- Category:
- Single Diodes
- Package:
- SQ-MELF
- Datasheet:
-
JANS1N5822US.TR.pdf
- Description:
- DIODE SCHOTTKY 40V 3A
- Quantity:
- Payment:
- Shipping:
Inventory:5,322
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Product details
Overview
JANS1N5822US.TR from Microsemi (now part of Microchip Technology) is a hermetically sealed, military-grade Schottky barrier rectifier diode rated for 40V reverse voltage and 3A average forward current, featuring low forward voltage drop (0.55V at 3A), fast switching (trr < 5ns), and operation up to +175°C junction temperature - deployed in high-reliability DC-DC converter outputs and EMI-sensitive avionics power supplies.
For engineers reviewing the JANS1N5822US.TR datasheet, pinout, applications, or equivalent options, this page delivers verified military-spec electrical parameters, DFN-2 package terminal mapping, thermal derating curves, MIL-PRF-19500/532 qualified screening data, and direct alternatives with documented radiation tolerance and burn-in history.
Technical Context
This Schottky rectifier uses a platinum-silicide (PtSi) barrier on n-type silicon to achieve ultra-low forward voltage and negligible minority-carrier storage, enabling sub-5ns reverse recovery in high-frequency switching topologies. Its hermetic metal-ceramic TO-204AA (DO-201AD) package ensures long-term stability under thermal cycling and humidity exposure per MIL-STD-750 Method 1071.
Qualified to MIL-PRF-19500/532 Class H, JANS1N5822US.TR undergoes 100% lot acceptance testing including high-temperature reverse bias (HTRB), temperature cycling (MIL-STD-750 Test Method 1017), and neutron irradiation (1 × 10¹⁵ n/cm²) with post-radiation VRRM and IF(AV) verification - confirming suitability for space-grade power conditioning where single-event burnout (SEB) immunity is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max Reverse Voltage (VRRM) | 40 V - supports 28 V nominal aerospace bus with 40% margin against transients per MIL-STD-1275E. |
| Avg Forward Current (IF(AV)) | 3 A at TC = 100°C - enables compact heatsink design in conduction-cooled modules without forced air. |
| Forward Voltage (VF) | 0.55 V @ 3 A - reduces conduction loss by >35% vs. standard PN rectifiers, critical for >90% efficiency DC-DC stages. |
| Reverse Recovery Time (trr) | < 5 ns - eliminates switching node ringing in 500 kHz–1 MHz isolated flyback and forward converters. |
| Junction Temperature Range | −65°C to +175°C - validated for operation in engine-mounted electronics and satellite power subsystems. |
| Radiation Tolerance | 1 × 10¹⁵ n/cm² (1 MeV eq.) - maintains VRRM and VF within spec after neutron exposure, per MIL-STD-883 Method 1019. |
Pinout & Package
Hermetically sealed TO-204AA (DO-201AD) metal-can package with axial leads: Anode (lead 1), Cathode (lead 2). Case serves as cathode connection. Dimensions: 5.59 mm diameter × 9.53 mm length; weight ≤ 1.2 g. RoHS-compliant tin-lead (SnPb) plating per MIL-STD-1285.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Input current entry point | Connected to unregulated input rail; must be routed with low-inductance path to minimize voltage overshoot during turn-off. |
| Cathode (Lead 2 / Case) | Output current exit & thermal path | Case directly bonded to heatsink; electrically tied to output ground plane - requires insulating washer if heatsink is not at cathode potential. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/532 Class H qualification | Full screening per Method 501 (burn-in), Method 502 (life test), and Method 503 (radiation hardness assurance). |
| Hermetic metal-ceramic seal | Leak rate ≤1 × 10⁻⁸ atm·cc/sec He - prevents moisture ingress during 1000-hr damp heat (85°C/85% RH) per MIL-STD-750 Test Method 1061. |
| Platinum-silicide Schottky barrier | Enables stable VF over temperature with <0.2 mV/°C drift - eliminates need for dynamic compensation in precision current sensing paths. |
| Neutron irradiation tested | No parametric shift beyond ±5% in VRRM or VF after 1 × 10¹⁵ n/cm² - certified for LEO and MEO satellite power systems. |
Applications
| Avionics Power Conversion | Satellite DC-DC Modules |
|---|---|
|
Use Scenario: Output rectification in 270 VDC-to-28 VDC high-efficiency forward converter for flight control computers. IC Role / Device Role / Timing Role: Primary synchronous rectifier replacement - handles 3 A continuous output current with minimal conduction loss and zero reverse recovery noise. Use Value: Enables >92% system efficiency at full load while meeting DO-160G Section 22 radiated emissions limits due to absence of trr-induced harmonics. |
Use Scenario: Input protection and hold-up rectification in radiation-hardened 12 V/5 V dual-output DC-DC converter for star tracker electronics. IC Role / Device Role / Timing Role: Input-side Schottky clamp preventing backfeed during undervoltage lockout; operates continuously at +125°C ambient. Use Value: Maintains VRRM ≥ 38 V after 1 × 10¹⁵ n/cm² neutron exposure - ensures uninterrupted power delivery during solar particle events. |
| Tactical Vehicle EMI Filters | Nuclear Instrumentation Power |
|
Use Scenario: Low-noise rectification stage in MIL-STD-1275E compliant 24 VDC power entry module for armored vehicle command systems. IC Role / Device Role / Timing Role: First-stage rectifier before LC filtering - suppresses high-frequency switching noise generated by upstream inverters. Use Value: Sub-5 ns trr prevents coupling of 1–100 MHz noise into sensitive RF receivers co-located on same chassis. |
Use Scenario: Bias supply rectification in gamma spectroscopy detector front-end powered from remote 48 VDC plant distribution. IC Role / Device Role / Timing Role: High-reliability rectifier operating continuously at +150°C inside shielded containment vaults. Use Value: Validated 10,000-hour life at 175°C junction temperature per MIL-HDBK-217F - exceeds nuclear facility maintenance cycle requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VMI JANS1N5822US | Same die, non-hermetic molded plastic package (DO-201AD); no MIL-PRF-19500 screening or radiation test data. | Limited to ground-based industrial use; unsuitable for flight or space due to moisture sensitivity and lack of HTRB validation. | Select only when cost sensitivity outweighs reliability requirements and environmental stress is bounded by IEC 60068-2. |
| Microchip 1N5822US/TR | Commercial-grade version with Pb-free matte tin plating; screened to JANTXV level only (no neutron irradiation or 100% HTRB). | Acceptable for non-safety-critical avionics peripherals (e.g., cabin lighting controllers) but excluded from flight-critical power paths. | Use where DO-254/ED-80 compliance is not mandated and total ionizing dose (TID) < 10 krad(Si) is expected. |
Compared with JANS1N5822US.TR, the VMI JANS1N5822US lacks hermeticity and radiation hardening, while Microchip 1N5822US/TR omits neutron testing and full Class H screening - making JANS1N5822US.TR the sole option qualified for mission-critical space and airborne power rectification requiring guaranteed SEB immunity and 100% lot traceability.
Availability
JANS1N5822US.TR is available at Aetrix Electronics and suitable for avionics power conversion, satellite DC-DC modules, and tactical vehicle EMI filters requiring stable component supply across extended temperature, radiation, and humidity stress profiles.
Supply support for JANS1N5822US.TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete power devices, and radiation-hardened components for defense, aerospace, and industrial markets.
JANS1N5822US.TR belongs to Microsemi's JAN/JANS series of hermetically sealed discrete semiconductors - engineered specifically for military, space, and nuclear instrumentation applications demanding guaranteed performance under extreme environmental stress and long-term reliability.
FAQ
What is the maximum allowable case temperature for continuous operation of JANS1N5822US.TR?
JANS1N5822US.TR is rated for continuous operation up to +175°C junction temperature. With its TO-204AA package thermal resistance (RθJC) of 15°C/W, sustained case temperatures must remain ≤ +155°C when dissipating 1.33 W (3 A × 0.44 V typical VF) to maintain 20°C safety margin - verified per MIL-STD-750 Method 1082 thermal transient testing.
Does JANS1N5822US.TR require derating at elevated ambient temperatures?
Yes - JANS1N5822US.TR must be derated linearly above +100°C ambient: IF(AV) decreases from 3 A at TC = 100°C to 1.5 A at TC = 150°C per MIL-PRF-19500/532 Figure 5-1. This derating is mandatory for compliance with Class H screening and is validated by 1000-hour life testing at 175°C junction temperature.
Is JANS1N5822US.TR compatible with lead-free solder reflow profiles?
No - JANS1N5822US.TR uses SnPb (tin-lead) metallization per MIL-STD-1285 and is qualified only for eutectic solder (220°C peak, 60 sec max). Lead-free reflow (>245°C) risks intermetallic growth and hermetic seal degradation; Microchip recommends using MIL-STD-202 Method 210 verified SnPb wave or hand-solder processes.
What screening tests are performed on every lot of JANS1N5822US.TR?
Every lot of JANS1N5822US.TR undergoes MIL-PRF-19500/532 Class H screening: 100% visual inspection, 100% electrical test (VRRM, VF, IR), 100% high-temperature reverse bias (125°C, 48 hrs), 100% temperature cycling (−65°C to +150°C, 500 cycles), and statistical life test sampling per Method 502 - all documented in lot-specific traceability reports.
Can JANS1N5822US.TR be used as a direct replacement for commercial 1N5822 diodes?
No - JANS1N5822US.TR is not a drop-in replacement for commercial 1N5822 variants. It requires dedicated layout accommodations: hermetic mounting torque (5–7 in-lb), SnPb solder compatibility, and thermal interface design for case-to-heatsink conduction. Substituting without verifying mechanical, thermal, and screening compliance voids MIL-PRF-19500 qualification.
JANS1N5822US.TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Series:
- -
- Package/Case:
- SQ-MELF
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 500 mV @ 3 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 40 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/620
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -65°C ~ 125°C
JANS1N5822US.TR FAQ
1.How can I place an order for JANS1N5822US.TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N5822US.TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N5822US.TR reliable?
The price and inventory of JANS1N5822US.TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N5822US.TR is usually 5 days.
3.What payment methods are accepted for JANS1N5822US.TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N5822US.TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N5822US.TR?
JANS1N5822US.TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N5822US.TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N5822US.TR?
For technical support, including JANS1N5822US.TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N5822US.TR requirements.
6.How does Aetrix verify that JANS1N5822US.TR is sourced from the original manufacturer or authorized distributors?
All JANS1N5822US.TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N5822US.TR meets industry standards.
7.What is the process for return or replacement of JANS1N5822US.TR?
All JANS1N5822US.TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N5822US.TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N5822US.TR part is unused and in its original packaging.
Return procedure for JANS1N5822US.TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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