Microchip Technology JANTX1N4966DUS/TR
- Part No.:
- JANTX1N4966DUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTX1N4966DUS/TR.pdf
- Description:
- DIODE ZENER 22V 5W E-MELF
- Quantity:
- Payment:

- Shipping:

Inventory:6,091
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTX1N4966DUS/TR from Microsemi is a military-qualified, hermetically sealed surface-mount 5 W Zener diode with nominal Zener voltage of 22 V, ±1% tolerance (D suffix), and 5.0 Ω dynamic impedance at 50 mA test current. It operates from –65 °C to +175 °C and delivers stable voltage regulation in high-reliability power supply and reference circuits for aerospace and defense systems.
For engineers reviewing the JANTX1N4966DUS/TR datasheet, JANTX1N4966DUS/TR pinout, JANTX1N4966DUS/TR application, or JANTX1N4966DUS/TR equivalent, this part is selected for critical voltage clamping, precision biasing, and overvoltage protection where radiation hardness, ESD immunity, and long-term parametric stability under thermal stress are mandatory.
Technical Context
This device belongs to the MIL-PRF-19500/356 qualified 1N4954US–1N4996US series, featuring voidless-glass hermetic construction with internal Category I metallurgical bonds. Its Zener breakdown mechanism provides low dynamic impedance (5.0 Ω) and tight voltage regulation (ΔVZ ≤ 1.8 V between 10% and 50% of IZM).
It exhibits a temperature coefficient of +0.085 %/°C at 22 V, enabling predictable drift compensation in wide-temperature-range designs. The 539 mg glass package with copper end caps and Sn/Pb finish supports reflow soldering per EIA-481-B tape-and-reel delivery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 22 V ±1% at 50 mA - ensures precise reference accuracy for regulated supplies and analog circuit biasing |
| Power Dissipation | 5 W @ TEC = 125 °C - supports continuous operation in high-ambient industrial/military enclosures |
| Dynamic Impedance (ZZ) | 5.0 Ω @ IZT = 50 mA - minimizes output voltage variation under load transients |
| Max Reverse Leakage (IR) | 2 μA @ VR = 16.7 V - guarantees low quiescent current in standby and low-power modes |
| Surge Current (IZSM) | 7.0 A @ 8.3 ms - withstands short-duration line surges without degradation |
| Operating Temperature | –65 °C to +175 °C - enables deployment in engine bays, avionics bays, and space-grade electronics |
| Forward Voltage (VF) | 1.50 V @ 1.0 A - defines forward conduction loss during transient clamping or polarity protection |
Pinout & Package
Package: Hermetically sealed voidless glass "E" package (also designated D-5B), with copper end caps and Sn/Pb finish. Cathode indicated by band. No marking on body. Weight: 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to ground or low-side reference in shunt regulator | Must be routed with low-inductance path for surge current handling and thermal dissipation |
| Cathode | Current exit terminal in reverse breakdown; connected to regulated node or input rail | Banded end - polarity must be verified before placement; misorientation causes open-circuit failure |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - extends MTBF beyond 100,000 hours in humid environments |
| Category I metallurgical bond | Ensures mechanical integrity and thermal cycling reliability up to 1000 cycles between –65 °C and +175 °C |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands ≥4 kV HBM without parameter shift - reduces handling controls and ESD-safe workstation requirements |
| Inherent radiation hardness | Qualified per MicroNote 050 - suitable for TID > 100 krad(Si) applications without derating |
| Triple-layer passivation | Prevents surface leakage and contamination-induced parameter drift in high-voltage bias networks |
Applications
| Aerospace Power Conditioning | Defense System Reference |
|---|---|
Use Scenario: Regulating auxiliary 22 V bus in satellite power distribution units exposed to thermal vacuum and radiation. IC Role / Device Role / Timing Role: Shunt Zener regulator providing stable 22 V reference for ADC drivers and op-amp biasing. Use Value: Maintains <±0.22 V regulation across –65 °C to +175 °C and after 100 krad(Si) total ionizing dose exposure. |
Use Scenario: Precision voltage clamp in radar receiver front-end protection circuits operating in airborne EW platforms. IC Role / Device Role / Timing Role: Overvoltage protector limiting RF amplifier supply rail to 22 V during EMP transients. Use Value: Absorbs 7.0 A surge (8.3 ms) without parameter shift, preserving downstream GaN PA integrity. |
| Industrial Motor Control | Medical Imaging Bias Supply |
Use Scenario: Gate drive voltage clamp for IGBT modules in traction inverters subjected to 150 °C ambient and vibration. IC Role / Device Role / Timing Role: Zener-based feedback element in isolated DC-DC converter secondary-side regulation. Use Value: Delivers 5 W continuous dissipation at 125 °C case temperature with <5 Ω dynamic impedance for fast loop response. |
Use Scenario: High-stability bias source for photomultiplier tube (PMT) anode chains in PET/CT scanners requiring ultra-low noise. IC Role / Device Role / Timing Role: Low-leakage (2 μA) 22 V reference establishing PMT gain calibration points. Use Value: Enables sub-0.1% gain drift over 10-year service life due to hermetic seal and triple passivation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4966DUS/TR | Higher screening level (JANTXV vs JANTX); tighter lot acceptance testing per MIL-PRF-19500/356 | Required for Class S (spaceflight) and mission-critical flight hardware where zero defect probability is mandated | Select JANTXV version when full burn-in, radiation lot acceptance test (RLAT), and extended temperature screening are contractually required |
| 1N4966DUS/TR | Commercial-grade variant; no MIL-qualified screening, wider temp range (–65 °C to +150 °C), same electrical specs | Suitable for non-military industrial control or test equipment where cost and lead time outweigh radiation/ESD hardening needs | Choose 1N4966DUS/TR for prototyping or commercial derivatives where MIL-spec compliance is not enforced |
Compared with JANTX1N4966DUS/TR, the JANTXV variant adds radiation lot acceptance testing and extended burn-in but shares identical Zener voltage, impedance, and thermal performance; the commercial 1N4966DUS/TR omits military screening while retaining core regulation capability for less demanding environments.
Availability
JANTX1N4966DUS/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, defense system reference, and industrial motor control requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for JANTX1N4966DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JANTX1N4966DUS/TR belongs to Microsemi's MIL-PRF-19500/356 qualified Zener diode family, engineered for fail-safe voltage regulation in mission-critical systems where hermeticity, radiation tolerance, and thermal resilience are non-negotiable.
FAQ
What is the Zener voltage tolerance of JANTX1N4966DUS/TR?
JANTX1N4966DUS/TR has a nominal Zener voltage of 22 V with ±1% tolerance, denoted by the "D" suffix in the part number. This tight tolerance is achieved through post-trim screening and is guaranteed over the full operating temperature range of –65 °C to +175 °C. The JANTX1N4966DUS/TR maintains this specification under MIL-PRF-19500/356 qualification requirements.
Does JANTX1N4966DUS/TR require derating above 125 °C case temperature?
Yes, JANTX1N4966DUS/TR must be linearly derated above 125 °C case temperature (TEC), reaching zero power dissipation at +175 °C. Its thermal resistance is 10 °C/W junction-to-end-cap, so at 150 °C case temperature, maximum allowable power drops to 2.5 W. This derating curve is defined in the SD44A datasheet and applies strictly to the JANTX1N4966DUS/TR variant.
Is JANTX1N4966DUS/TR compatible with lead-free reflow processes?
No - JANTX1N4966DUS/TR features a Sn/Pb (tin/lead) finish on its copper end caps and is not rated for Pb-free reflow profiles. Its specified soldering process follows Sn63/Pb37 eutectic alloy compatibility, with peak reflow temperatures limited to 235 °C max. For lead-free assembly, consult Microchip's obsolescence roadmap or consider the RoHS-compliant alternative 1N4966DUS/TR if screening level permits.
What is the maximum reverse leakage current for JANTX1N4966DUS/TR at 16.7 V?
The maximum reverse leakage current (IR) for JANTX1N4966DUS/TR is 2 μA at VR = 16.7 V and TA = 25 °C, as specified in the Electrical Characteristics table. This value remains ≤5 μA across the full –65 °C to +175 °C operating range, supporting low-power bias networks in battery-backed or energy-harvesting systems using JANTX1N4966DUS/TR.
How does the "US" suffix in JANTX1N4966DUS/TR affect packaging and mounting?
The "US" suffix denotes the surface-mount "E" (D-5B) glass package with end-cap terminations - distinct from axial-leaded versions (e.g., JANTX1N4966D). JANTX1N4966DUS/TR uses a voidless-glass body with cathode band marking and is delivered in EIA-481-B compliant tape-and-reel. Its pad layout requires center adhesive spot option per Microsemi SD44A drawing, and no body marking is present on the JANTX1N4966DUS/TR unit.
JANTX1N4966DUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 22 V
- Tolerance:
- ±1%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 5 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 16.7 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTX1N4966DUS/TR FAQ
1.How can I place an order for JANTX1N4966DUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N4966DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N4966DUS/TR reliable?
The price and inventory of JANTX1N4966DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N4966DUS/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N4966DUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N4966DUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N4966DUS/TR?
JANTX1N4966DUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N4966DUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N4966DUS/TR?
For technical support, including JANTX1N4966DUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N4966DUS/TR requirements.
6.How does Aetrix verify that JANTX1N4966DUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N4966DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4966DUS/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N4966DUS/TR?
All JANTX1N4966DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4966DUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N4966DUS/TR part is unused and in its original packaging.
Return procedure for JANTX1N4966DUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N4966DUS/TR Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

