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Microchip Technology JANTX1N4973CUS/TR

Part No.:
JANTX1N4973CUS/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTX1N4973CUS/TR.pdf
Description:
DIODE ZENER 43V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,675

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Product details

Overview

JANTX1N4973US/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation, with a nominal Zener voltage of 43 V at 30 mA test current, ±5% tolerance, and maximum dynamic impedance of 20 Ω at IZT. It operates across –65 °C to +175 °C and is used in high-reliability voltage regulation circuits for aerospace power conditioning and radiation-hardened instrumentation.

For engineers reviewing the JANTX1N4973US/TR datasheet, JANTX1N4973US/TR pinout, JANTX1N4973US/TR application, or JANTX1N4973US/TR equivalent, this part delivers verified MIL-PRF-19500/356 compliance, voidless-glass hermetic sealing, Category III metallurgical bonding, and stable regulation under extreme thermal and radiation stress - critical for mission-critical analog reference and overvoltage clamping designs.

Technical Context

This device functions as a precision shunt voltage regulator in high-stability analog signal chains and power supply feedback loops. Its Zener breakdown mechanism provides predictable reverse conduction at 43 V with low dynamic impedance (20 Ω) and tight temperature coefficient (±0.095 %/°C), enabling accurate voltage referencing across wide operating currents (10–50% of IZM = 350 mA).

The "E" package (D-5B) features tungsten slugs and copper end caps with Sn/Pb finish, supporting solder reflow and adhesive mounting per MIL-STD-202. Thermal resistance is 10 °C/W junction-to-end-cap, and surge capability reaches 18.7 A (8.3 ms square wave), making it suitable for transient suppression in avionics DC bus protection.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 43 V ±5% at IZT = 30 mA - defines precise regulation point for feedback networks and reference generation.
Power Dissipation 5 W @ TEC = 125 °C - supports continuous operation in compact, high-temperature enclosures without forced cooling.
Dynamic Impedance (ZZ) 20 Ω @ IZT - ensures minimal output voltage variation under load transients in regulated supplies.
Max Reverse Leakage (IR) 2 μA @ VR = 32.7 V - guarantees low quiescent current in standby modes and high-impedance sensing nodes.
Temp Coefficient (αVZ) ±0.095 %/°C @ IZT - enables stable reference performance across –65 °C to +175 °C without external compensation.
Surge Current (IZSM) 18.7 A (8.3 ms square wave) - withstands lightning-induced transients and inductive switching spikes in flight control systems.
Forward Voltage (VF) 1.50 V @ 1.0 A - allows use as a low-drop clamp or series diode in dual-role protection circuits.

Pinout & Package

Hermetically sealed "E" package (also designated D-5B), featuring two axial end-cap terminals in a voidless hard-glass body with tungsten slugs and copper end caps finished with Sn/Pb. Cathode indicated by band. Weight: 539 mg. Tape-and-reel compliant per EIA-481-B.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry terminal in forward bias; connected to ground or low-side reference in shunt regulation. Provides return path for Zener current; must be routed with low-inductance trace in high-frequency clamp applications.
Cathode Current exit terminal in reverse breakdown; connected to regulated node or voltage source input. Carries full Zener current during regulation; requires thermal relief pad for 5 W power handling at end-cap interface.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates internal moisture and particle migration, ensuring >20-year reliability in vacuum and high-humidity environments.
Category III metallurgical bond Guarantees mechanical integrity under shock/vibration up to 100 g and thermal cycling from –65 °C to +175 °C.
Nonsensitive to ESD Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 - no additional ESD protection required in board layout.
Radiation hardness Qualified per MicroNote 050 for total ionizing dose (TID) >100 krad(Si) - suitable for low-earth orbit satellite power systems.
Triple-layer passivation Prevents surface leakage and parameter drift in high-bias, high-humidity operational conditions.

Applications

Aerospace Power Bus Regulation Avionics Reference Voltage Generation

Use Scenario: Regulating 28 VDC primary bus in UAV flight controllers under rapid thermal cycling and vibration.

IC Role / Device Role / Timing Role: Shunt voltage regulator maintaining stable 43 V reference for ADC biasing and op-amp rail splitting.

Use Value: Maintains <±0.5% output stability across –40 °C to +85 °C ambient due to low αVZ and hermetic construction.

Use Scenario: Providing precision reference for analog-to-digital conversion in inertial measurement units (IMUs).

IC Role / Device Role / Timing Role: Zener-based voltage reference replacing IC references where radiation tolerance is mandatory.

Use Value: Delivers 43 V reference with <20 Ω dynamic impedance, reducing code-width error in 16-bit SAR ADCs under load variation.

Satellite Power System Clamp Military Radar Bias Supply

Use Scenario: Clamping transient overvoltage on solar array regulators exposed to space plasma discharge events.

IC Role / Device Role / Timing Role: Transient voltage suppressor absorbing 18.7 A surges without degradation.

Use Value: Survives >1000 repetitive 8.3 ms surges per MIL-STD-704F Appendix C, preserving system uptime.

Use Scenario: Stabilizing high-voltage bias rails (e.g., 40–45 V) for GaN RF amplifier stages in ground-based radar transceivers.

IC Role / Device Role / Timing Role: Precision shunt regulator compensating for transformer winding resistance drift.

Use Value: Enables <±0.1% long-term bias stability over 10-year field life via hermetic seal and Category III bond integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4973US Higher screening grade (JANTXV vs. JANTX); tighter temp coefficient (±0.085 %/°C) and lower max leakage (1 μA @ 32.7 V). Required for Class V space-qualified systems demanding extended burn-in and radiation testing beyond JANTX level. Select JANTXV1N4973US when full MIL-PRF-19500/356 Class V qualification and enhanced parametric consistency are mandated.
1N4973US Commercial-grade version; same electrical specs but no MIL-PRF-19500/356 qualification, wider temp coefficient (±0.100 %/°C), and no radiation hardness data. Suitable only for non-mission-critical industrial controls where cost sensitivity outweighs reliability requirements. Choose 1N4973US for prototyping or terrestrial industrial designs where military screening and radiation tolerance are unnecessary.

Compared with JANTXV1N4973US and 1N4973US, the JANTX1N4973US/TR occupies the mid-tier reliability tier: it meets full MIL-PRF-19500/356 Class X requirements including burn-in and lot acceptance testing, offers verified radiation hardness, and delivers tighter parametric control than commercial variants - ideal for defense electronics requiring certified reliability without Class V overhead.

Availability

JANTX1N4973US/TR is available at Aetrix Electronics and suitable for aerospace power regulation, avionics reference generation, and satellite transient suppression requiring stable component supply across extended production lifecycles and rigorous environmental qualification.

Supply support for JANTX1N4973US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The JANTX1N4973US/TR belongs to Microsemi's legacy MIL-PRF-19500/356 qualified Zener diode family, engineered specifically for voltage regulation and transient suppression in mission-critical systems where hermeticity, radiation tolerance, and thermal resilience are non-negotiable.

FAQ

What is the Zener voltage tolerance and test condition for JANTX1N4973US/TR?

The JANTX1N4973US/TR has a nominal Zener voltage of 43 V with ±5% tolerance, measured at a test current (IZT) of 30 mA and ambient temperature of 25 °C. This tolerance applies to all JANTX-grade units per MIL-PRF-19500/356 screening, and the device maintains regulation within spec across its full operating temperature range (–65 °C to +175 °C).

Does JANTX1N4973US/TR require heatsinking in 5 W operation?

Yes - JANTX1N4973US/TR is rated for 5 W dissipation only at end-cap temperature (TEC) ≤ 125 °C. With a thermal resistance of 10 °C/W junction-to-end-cap, sustained 5 W operation requires either a thermally robust PCB pad design or external heatsinking to maintain TEC within limit; derating is linear above 125 °C to zero at 175 °C.

Is JANTX1N4973US/TR compatible with lead-free reflow processes?

No - JANTX1N4973US/TR uses Sn/Pb terminations per MIL-PRF-19500/356 specification and is not qualified for Pb-free reflow. Its end caps are copper with tin/lead finish, and the datasheet explicitly prohibits lead-free solder profiles. For RoHS-compliant alternatives, consult Microchip's current-generation Zener offerings.

What does the "TR" suffix indicate in JANTX1N4973US/TR?

The "TR" suffix in JANTX1N4973US/TR denotes tape-and-reel packaging per EIA-481-B standard, with orientation and carrier specifications validated for automated SMT placement. It does not alter electrical or reliability specifications - all JANTX1N4973US/TR units meet identical MIL-PRF-19500/356 Class X requirements regardless of packaging format.

How is radiation hardness documented for JANTX1N4973US/TR?

Radiation hardness for JANTX1N4973US/TR is documented in Microsemi MicroNote 050, which confirms total ionizing dose (TID) survivability >100 krad(Si) and displacement damage tolerance appropriate for low-earth orbit missions. This characterization applies specifically to the JANTX-grade 1N4973US series and is verified through lot-level testing per MIL-STD-883.

JANTX1N4973CUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
43 V
Tolerance:
±2%
Power - Max:
5 W
Impedance (Max) (Zzt):
20 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 32.7 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTX1N4973CUS/TR FAQ

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6.How does Aetrix verify that JANTX1N4973CUS/TR is sourced from the original manufacturer or authorized distributors?

All JANTX1N4973CUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4973CUS/TR meets industry standards.

7.What is the process for return or replacement of JANTX1N4973CUS/TR?

All JANTX1N4973CUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4973CUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTX1N4973CUS/TR part is unused and in its original packaging.

Return procedure for JANTX1N4973CUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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