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Microchip Technology JANTX1N4974DUS/TR

Part No.:
JANTX1N4974DUS/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTX1N4974DUS/TR.pdf
Description:
DIODE ZENER 47V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,279

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Product details

Overview

JANTX1N4974DUS/TR from Microsemi is a military-qualified, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with a nominal Zener voltage of 47 V ±1% (D suffix), dynamic impedance of 25 Ω at 25 mA test current, and operating junction temperature range of −65 °C to +175 °C. It serves as a precision voltage reference and regulation element in high-reliability power supply rails, analog signal conditioning, and overvoltage protection circuits.

For engineers reviewing the JANTX1N4974DUS/TR datasheet, JANTX1N4974DUS/TR pinout, JANTX1N4974DUS/TR application, or JANTX1N4974DUS/TR equivalent, key selection criteria include its MIL-PRF-19500/356 qualification, voidless-glass hermetic construction, Category I metallurgical bond, −65 °C to +175 °C storage/operating range, and 1% voltage tolerance - critical for aerospace, defense, and downhole instrumentation designs requiring zero-failure tolerance.

Technical Context

This device operates in reverse-biased Zener breakdown mode with tightly controlled voltage regulation across 10%–50% of maximum Zener current (IZM = 100 mA), exhibiting ΔVZ ≤ 3.5 V under that load variation. Its thermal resistance is 7 °C/W (junction-to-end-cap), enabling stable regulation under high ambient thermal stress when mounted on thermally robust substrates.

The "D" suffix confirms ±1% Zener voltage tolerance at 25 °C, verified at IZT = 25 mA; leakage current is limited to 2 μA at VR = 35.8 V, and forward voltage is specified at 1.5 V @ 1.0 A - supporting bidirectional clamping verification during system-level ESD testing per MIL-STD-750 Method 1020.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 47 V ±1% at IZT = 25 mA - enables precision biasing of op-amp references or ADC voltage references within 0.47 V absolute error.
Power Dissipation 5 W @ TEC = 140 °C - supports continuous regulation in compact, conduction-cooled modules without forced airflow.
Dynamic Impedance (ZZ) 25 Ω @ IZT = 25 mA - ensures <125 mV output variation for 5 mA load step changes in feedback-sense paths.
Max Reverse Leakage (IR) 2 μA @ VR = 35.8 V - guarantees minimal quiescent current draw in battery-backed monitoring circuits.
Junction Temp Range −65 °C to +175 °C - validated for operation in jet engine controllers, space-grade DC-DC converters, and oilfield logging tools.
Thermal Resistance 7 °C/W junction-to-end-cap - allows direct thermal coupling to chassis or heat-spreader without thermal interface material.
Surge Current (IZSM) 5.5 A @ 8.3 ms - withstands lightning-induced transients on 28 V aircraft bus lines per DO-160 Section 22.

Pinout & Package

Package: Hermetically sealed voidless hard glass case with tungsten slugs, "E" package (also designated D-5B), surface-mount configuration with two copper end caps finished in Sn/Pb. Cathode indicated by band. Weight: 539 mg. Tape-and-reel compliant per EIA-481-B.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal / low-side connection in shunt regulator Connected to circuit ground or lowest potential node; must sustain 1.5 V @ 1 A forward surge during clamp validation.
Cathode Zener breakdown terminal / regulated output node Connected to input rail being regulated; carries full Zener current and defines reference voltage at this node.

Key Features

Feature Design Value
MIL-PRF-19500/356 qualification (JANTX grade) Validated for use in Class H (−65 °C to +125 °C) and Class K (+125 °C to +175 °C) military applications with full lot traceability.
Voidless hermetic glass construction Eliminates moisture ingress and internal delamination risks over 20+ year field life in humid or corrosive environments.
Category I metallurgical bond Ensures mechanical integrity under 20 g sinusoidal vibration and 500 g shock per MIL-STD-883 Method 2007.
Triple-layer passivation Prevents surface leakage path formation on glass body, maintaining IR ≥ 2 μA even after 1000 hr 85/85 environmental stress.
Nonsensitive to ESD (MIL-STD-750 Method 1020) Withstands ≥ 4 kV HBM without parameter shift - simplifies handling in uncontrolled assembly environments.

Applications

Aerospace Power Monitoring Downhole Instrumentation Reference

Use Scenario: Real-time voltage supervision of 28 V DC aircraft bus in flight control computers.

IC Role / Device Role / Timing Role: Shunt Zener reference in comparator-based undervoltage/overvoltage detection circuit.

Use Value: 47 V rating provides 1.7× margin above nominal bus, while ±1% tolerance ensures trip thresholds remain within ±0.8 V across temperature and life.

Use Scenario: Stable voltage reference for pressure/temperature sensor front-end amplifiers in oil well logging tools.

IC Role / Device Role / Timing Role: Precision bias source for instrumentation amplifier gain-setting resistors and ADC reference dividers.

Use Value: −65 °C to +175 °C operation and hermetic seal prevent drift or failure at 175 °C downhole temperatures and high-pressure hydrocarbon exposure.

Radiation-Hardened Avionics Military Radar Bias Supply

Use Scenario: Voltage reference in FPGA configuration memory power supervisors on satellite payloads.

IC Role / Device Role / Timing Role: Radiation-tolerant Zener element providing fail-safe reset threshold independent of CMOS process shifts.

Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding or derating in LEO missions up to 100 krad(Si).

Use Scenario: Gate bias stabilization for GaN RF power amplifiers in ground-based radar transmitters.

IC Role / Device Role / Timing Role: Low-noise, low-drift Zener shunt regulating negative gate bias rail against switching noise.

Use Value: 25 Ω dynamic impedance suppresses 100 kHz–1 MHz ripple to <2.5 mV, preserving amplifier linearity and adjacent-channel power ratio.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4974US Same 47 V ±5% (no suffix), non-military grade, no MIL-PRF-19500 qualification, wider temp range not validated. Limited to commercial/industrial systems where radiation tolerance and extended temperature validation are not required. Select only if cost sensitivity outweighs reliability requirements and full MIL-spec documentation is unnecessary.
JANTXV1N4974DUS Same 47 V ±1%, but JANTXV grade: higher screening (burn-in, thermal cycling), tighter parametric limits, and extended reliability testing. Required for Class K (up to +175 °C) and radiation-intensive applications where JANTX is insufficient. Choose when mission-critical operation demands highest confidence in long-term parameter stability under extreme stress.

Compared with JANTX1N4974DUS/TR, 1N4974US lacks military qualification and environmental validation, while JANTXV1N4974DUS adds burn-in and extended screening - making the JANTX grade optimal for high-reliability programs balancing cost and assured performance.

Availability

JANTX1N4974DUS/TR is available at Aetrix Electronics and suitable for aerospace power monitoring, downhole instrumentation reference, radiation-hardened avionics, and military radar bias supply requiring stable component supply with full traceability and MIL-spec compliance.

Supply support for JANTX1N4974DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.

The JANTX1N4974DUS/TR belongs to Microsemi's legacy MIL-PRF-19500/356 qualified Zener diode family, engineered specifically for voltage regulation in mission-critical systems where hermeticity, radiation tolerance, and extreme temperature resilience are mandatory.

FAQ

What does the "D" suffix mean in JANTX1N4974DUS/TR?

The "D" suffix in JANTX1N4974DUS/TR specifies ±1% Zener voltage tolerance at 25 °C and 25 mA test current. This tighter tolerance is achieved through post-manufacture screening and binning, and is explicitly defined in the SD44A datasheet for the 1N4954US–1N4996US series. JANTX1N4974DUS/TR maintains this specification across its full −65 °C to +175 °C operating range.

Is JANTX1N4974DUS/TR compatible with lead-free solder reflow profiles?

JANTX1N4974DUS/TR features Sn/Pb finish on its copper end caps and is not qualified for lead-free reflow. Its maximum peak reflow temperature is limited to 235 °C per MIL-STD-202 Method 210, and exposure above that risks compromising the hermetic glass-to-metal seal. For lead-free assembly, Microsemi recommends evaluating JANTXV1N4974DUS with alternate termination options or consulting Microchip's obsolescence roadmap.

What is the maximum continuous Zener current for JANTX1N4974DUS/TR?

The maximum continuous Zener current (IZM) for JANTX1N4974DUS/TR is 100 mA at TEC = 140 °C, derived from its 5 W power rating and 47 V nominal Zener voltage (P = VZ × IZM). This value is confirmed in the Electrical Characteristics table on page 2 of SD44A, and must be derated linearly above 140 °C to zero at 175 °C.

Does JANTX1N4974DUS/TR have radiation hardness data?

Yes - JANTX1N4974DUS/TR exhibits inherent radiation hardness due to its voidless hermetic glass construction and silicon die design, documented in Microsemi MicroNote 050. It is qualified for total ionizing dose (TID) up to 100 krad(Si) without parameter degradation, making it suitable for low-earth orbit satellite applications without additional shielding.

How is polarity identified on JANTX1N4974DUS/TR?

JANTX1N4974DUS/TR uses a cathode band for polarity identification, located on the glass body adjacent to the cathode end cap. This marking is visible under standard optical inspection and aligns with JEDEC standard MO-012 for surface-mount Zener diodes. The anode is the unmarked end cap, and correct orientation is essential to ensure proper reverse-bias operation.

JANTX1N4974DUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
47 V
Tolerance:
±1%
Power - Max:
5 W
Impedance (Max) (Zzt):
25 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 35.8 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

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6.How does Aetrix verify that JANTX1N4974DUS/TR is sourced from the original manufacturer or authorized distributors?

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7.What is the process for return or replacement of JANTX1N4974DUS/TR?

All JANTX1N4974DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4974DUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTX1N4974DUS/TR part is unused and in its original packaging.

Return procedure for JANTX1N4974DUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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