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Microchip Technology JANTX1N4979DUS/TR

Part No.:
JANTX1N4979DUS/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTX1N4979DUS/TR.pdf
Description:
DIODE ZENER 75V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,883

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Product details

Overview

JANTX1N4979DUS/TR from Microsemi is a hermetically sealed, voidless-glass surface-mount 5 W Zener diode with nominal Zener voltage of 75 V, ±1% tolerance (D suffix), and 20 mA test current. It operates from –65 °C to +175 °C and delivers stable voltage regulation in high-reliability military power conditioning circuits.

For engineers reviewing the JANTX1N4979DUS/TR datasheet, JANTX1N4979DUS/TR pinout, JANTX1N4979DUS/TR application, or JANTX1N4979DUS/TR equivalent, key selection criteria include its MIL-PRF-19500/356 qualification, Category III metallurgical bond, 539 mg mass, and 10 °C/W junction-to-end-cap thermal resistance - all critical for aerospace power bus protection and radiation-hardened systems.

Technical Context

This device belongs to the JANTX-grade 1N4954US–1N4996US series, featuring triple-layer passivation and internal Category III metallurgical bonds per MIL-PRF-19500/356. Its voidless-glass construction ensures zero internal delamination under thermal cycling and shock.

It regulates voltage across a wide current range (10% to 50% of IZM = 2 A), with dynamic impedance of 55 Ω at 20 mA and reverse leakage ≤2 μA at 57 V. Temperature coefficient is +0.100 %/°C, enabling predictable drift compensation in precision reference designs.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 75 V ±1% at 20 mA - defines precise regulation point for 75 V rail stabilization
Power Dissipation 5 W @ TEC = 125 °C - requires heatsinking or thermal pad design for sustained operation
Dynamic Impedance (ZZ) 55 Ω at IZT = 20 mA - low AC impedance ensures minimal output ripple under load transients
Max Reverse Leakage (IR) 2 μA at VR = 57 V - enables ultra-low standby current in battery-backed hold-up circuits
Thermal Resistance (θJC) 10 °C/W junction-to-end-cap - dictates minimum copper area and via count for thermal management
Operating Temperature –65 °C to +175 °C - supports deployment in engine bay, space payload, and downhole electronics
Surge Current (IZSM) 2 A at 8.3 ms - withstands lightning-induced transients without degradation

Pinout & Package

Package: Hermetically sealed voidless glass "E" package (also designated D-5B), with copper end caps and Sn/Pb finish. Cathode indicated by band. Weight: 539 mg. Tape-and-reel compliant per EIA-481-B.

Pin/Terminal Circuit Role Design Meaning
Anode Current sink terminal in reverse-bias regulation mode Connected to system ground or lower-potential node during Zener operation
Cathode Regulated output terminal (band-marked) Provides stable 75 V reference when anode is grounded and current ≥20 mA flows

Key Features

Feature Design Value
MIL-PRF-19500/356 JANTX qualification Guarantees screening for burn-in, temperature cycling, and hermeticity - required for Class H/S space and defense programs
Category III metallurgical bond Eliminates interfacial voids between silicon die and tungsten slug - prevents bond lift under mechanical stress
Triple-layer passivation Prevents moisture ingress and ion migration - essential for long-term reliability in humid or saline environments
Nonsensitive to ESD (MIL-STD-750 Method 1020) Withstands >4 kV HBM without parameter shift - simplifies handling and assembly in uncontrolled environments
Inherent radiation hardness No TID degradation up to 100 krad(Si) - validated per MicroNote 050 for satellite power subsystems

Applications

Aerospace Power Bus Protection Downhole Instrumentation Reference

Use Scenario: Clamping transient overvoltage on 70–80 V DC bus in satellite power distribution units.

IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown as shunt regulator and surge limiter.

Use Value: Withstands 2 A 8.3 ms surges and maintains <±1% regulation across –65 °C to +175 °C - eliminates need for external TVS cascading.

Use Scenario: Providing stable 75 V bias for piezoelectric sensor amplifiers in oil/gas well logging tools.

IC Role / Device Role / Timing Role: Precision voltage reference source with ultra-low leakage (<2 μA).

Use Value: Enables sub-0.1% gain stability over temperature and lifetime - critical for calibrated pressure measurement accuracy.

Military Radar Pulse Modulator Radiation-Hardened Medical Imaging PSU

Use Scenario: Regulating gate drive voltage for high-voltage MOSFET stacks in pulsed radar transmitters.

IC Role / Device Role / Timing Role: Zener clamp protecting gate drivers from flyback spikes during switching.

Use Value: Category III bond and voidless glass prevent microcrack propagation under repeated 10 kV pulse stress - extends mean time between failures.

Use Scenario: Generating isolated 75 V bias for X-ray detector front-end ASICs in radiotherapy equipment.

IC Role / Device Role / Timing Role: Radiation-tolerant voltage reference in high-dose gamma environments.

Use Value: Inherent hardness per MicroNote 050 avoids derating or shielding - reduces system size and weight by 35% vs. commercial alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4979DUS/TR Higher screening level (JANTXV vs. JANTX): includes additional lot acceptance tests and tighter parametric limits Required for mission-critical avionics where failure probability must be <10−9/hour Select when full MIL-PRF-19500/356 Class V compliance is mandated by program spec
1N4979US Commercial-grade version: no MIL screening, no radiation hardness validation, ±5% tolerance Suitable only for non-safety-critical industrial controls with ambient temperature <+125 °C Choose only for cost-sensitive prototyping where military reliability is not required

Compared with JANTX1N4979DUS/TR, JANTXV1N4979DUS/TR adds life-test validation and tighter VZ drift control for flight-critical systems, while 1N4979US omits hermeticity testing and radiation assurance - making it unsuitable for space or nuclear medicine use.

Availability

JANTX1N4979DUS/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, downhole instrumentation, and radiation-hardened medical imaging systems requiring stable component supply across extended temperature and radiation environments.

Supply support for JANTX1N4979DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.

The JANTX1N4979DUS/TR belongs to Microsemi's military-qualified Zener diode family, engineered specifically for fail-safe voltage regulation in extreme-environment electronics where hermeticity, radiation tolerance, and thermal robustness are non-negotiable.

FAQ

What is the Zener voltage tolerance of JANTX1N4979DUS/TR?

JANTX1N4979DUS/TR has a nominal Zener voltage of 75 V with ±1% tolerance, indicated by the "D" suffix per Microsemi's standard coding. This tight tolerance ensures consistent regulation across production lots and temperature extremes, critical for precision reference applications in defense and space systems where calibration stability is mandatory.

Is JANTX1N4979DUS/TR hermetically sealed?

Yes, JANTX1N4979DUS/TR uses voidless hermetically sealed hard glass construction with internal tungsten slugs and Category III metallurgical bonds. This meets MIL-PRF-19500/356 requirements and prevents moisture ingress, outgassing, or bond degradation under thermal cycling - a key differentiator versus plastic-packaged commercial Zeners.

What is the maximum continuous Zener current for JANTX1N4979DUS/TR?

The maximum continuous Zener current (IZM) for JANTX1N4979DUS/TR is 2 A, derived from its 5 W power rating and 75 V Zener voltage (P = V × I). This value assumes operation at TEC = 125 °C; derating is linear to zero at +175 °C, requiring careful thermal design in high-power applications.

Does JANTX1N4979DUS/TR have radiation hardness certification?

Yes, JANTX1N4979DUS/TR exhibits inherent radiation hardness validated per Microsemi MicroNote 050, with no total ionizing dose (TID) degradation up to 100 krad(Si). This makes it suitable for satellite power systems and radiotherapy equipment without additional shielding or derating.

What package type is used for JANTX1N4979DUS/TR?

JANTX1N4979DUS/TR uses the "E" package (also known as D-5B), a surface-mount hermetic glass case with copper end caps and Sn/Pb finish. Its dimensions and pad layout are standardized per Microsemi's SD44A datasheet, supporting automated placement and reflow soldering in high-reliability PCB assembly lines.

JANTX1N4979DUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
75 V
Tolerance:
±1%
Power - Max:
5 W
Impedance (Max) (Zzt):
55 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 56 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTX1N4979DUS/TR FAQ

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Please submit a Request for Quotation (RFQ) for JANTX1N4979DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of JANTX1N4979DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N4979DUS/TR is usually 5 days.

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5.How can I obtain technical support or documentation for JANTX1N4979DUS/TR?

For technical support, including JANTX1N4979DUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N4979DUS/TR requirements.

6.How does Aetrix verify that JANTX1N4979DUS/TR is sourced from the original manufacturer or authorized distributors?

All JANTX1N4979DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4979DUS/TR meets industry standards.

7.What is the process for return or replacement of JANTX1N4979DUS/TR?

All JANTX1N4979DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4979DUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTX1N4979DUS/TR part is unused and in its original packaging.

Return procedure for JANTX1N4979DUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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