Microchip Technology JANTX1N4983DUS/TR
- Part No.:
- JANTX1N4983DUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTX1N4983DUS/TR.pdf
- Description:
- DIODE ZENER 110V 5W E-MELF
- Quantity:
- Payment:

- Shipping:

Inventory:4,693
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Product details
Overview
JANTX1N4983DUS/TR from Microsemi is a military-qualified, hermetically sealed surface-mount 5 W Zener diode with nominal Zener voltage of 110 V, ±1% tolerance (D suffix), and 12 mA test current. It delivers stable voltage regulation over -65°C to +175°C operating range and is used in high-reliability power supply reference and overvoltage protection circuits for aerospace avionics and defense electronics.
For engineers reviewing the JANTX1N4983DUS/TR datasheet, JANTX1N4983DUS/TR pinout, JANTX1N4983DUS/TR application, or JANTX1N4983DUS/TR equivalent, this part is selected for mission-critical voltage clamping where radiation hardness, ESD immunity, and long-term parametric stability under thermal stress are mandatory design requirements.
Technical Context
This device belongs to the MIL-PRF-19500/356 qualified 1N4954US–1N4996US series and uses voidless hermetically sealed hard-glass construction with internal Category I metallurgical bonds. Its Zener breakdown mechanism provides low dynamic impedance (125 Ω at 12 mA) and tight voltage regulation (ΔVZ ≤ 9.0 V between 10% and 50% of IZM).
It operates with 1.5 V forward voltage at 1.0 A, exhibits <2 μA reverse leakage at 83.6 V, and maintains temperature coefficient of +0.100 %/°C - enabling predictable drift compensation in precision analog references across extreme ambient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage (VZ) | 110 V ±1% at 12 mA - defines precise clamping threshold for overvoltage protection and reference generation. |
| Power Dissipation | 5 W @ TEC = 140°C - supports continuous operation in high-temperature chassis-mounted applications. |
| Dynamic Impedance (ZZ) | 125 Ω at IZT = 12 mA - ensures minimal output voltage variation under load transients. |
| Max Reverse Leakage (IR) | <2 μA at 83.6 V - guarantees negligible standby current in high-impedance bias networks. |
| Temp Coefficient (αVZ) | +0.100 %/°C - enables accurate thermal drift modeling for compensated reference designs. |
| Surge Current (IZSM) | 1.2 A (8.3 ms square wave) - withstands transient energy surges without degradation. |
| Operating Temperature | -65°C to +175°C - validated for use in uncooled military vehicle and satellite power systems. |
Pinout & Package
Hermetically sealed "E" package (also designated D-5B), glass-body surface-mount device with copper end caps finished in Sn/Pb. Cathode indicated by band. No marking on body. Weight: 539 mg. Tape-and-reel compliant per EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential node; carries full surge/continuous current during forward bias or clamp recovery. |
| Cathode | Zener breakdown terminal | Banded end; connected to higher-potential node; establishes regulated voltage reference at cathode-to-anode potential. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in humid or vacuum environments. |
| Category I metallurgical bond | Ensures mechanical integrity and thermal cycling reliability up to 1000 cycles between -65°C and +175°C. |
| Triple-layer passivation | Prevents surface leakage paths and contamination-induced parameter shift during extended high-voltage bias. |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands >15 kV HBM without parameter shift - simplifies handling and eliminates need for ESD-safe assembly protocols. |
| Inherent radiation hardness | Qualified per MicroNote 050 for total ionizing dose (TID) >100 krad(Si) - suitable for low-earth orbit electronics. |
Applications
| Aerospace Power Conditioning | Defense Radar Bias Supply |
|---|---|
|
Use Scenario: Regulating auxiliary bias rails in satellite DC-DC converters exposed to thermal vacuum and radiation. IC Role / Device Role / Timing Role: Zener reference and overvoltage clamp protecting FET gate drivers and op-amp supplies. Use Value: Maintains 110 V reference stability within ±1.1 V over full temperature range and 100 krad(Si) TID exposure. |
Use Scenario: Providing stable reference voltage for high-power RF amplifier bias sequencing in ground-based radar transmitters. IC Role / Device Role / Timing Role: Precision shunt regulator establishing fixed bias point for GaN HEMT gate control circuitry. Use Value: Delivers <2 μA leakage at 83.6 V and 125 Ω dynamic impedance to minimize bias drift during pulsed RF operation. |
| Tactical Vehicle Power Management | Nuclear Instrumentation Systems |
|
Use Scenario: Overvoltage protection for 28 V aircraft bus interfaces subjected to load dump transients up to 100 V. IC Role / Device Role / Timing Role: Fast-response shunt clamp absorbing surge energy without latch-up or parametric shift. Use Value: Withstands 1.2 A, 8.3 ms surge events while maintaining post-surge VZ within ±0.5% of initial value. |
Use Scenario: High-stability voltage reference in neutron detector pulse-height analyzers requiring decades-long calibration retention. IC Role / Device Role / Timing Role: Primary Zener reference element in ultra-low-drift analog front-end signal chains. Use Value: Achieves <0.001%/1000 hrs long-term stability due to hermetic glass seal and Category I bond integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4983DUS/TR | Higher screening level (JANTXV vs JANTX); tighter lot acceptance testing per MIL-PRF-19500/356. | Required for Class H (spaceflight) and critical flight-safety systems where zero defect probability is mandated. | Select JANTXV1N4983DUS/TR when full burn-in, radiation lot acceptance tests, and enhanced screening documentation are contractually required. |
| 1N4983US (non-military) | No MIL-spec qualification; commercial-grade screening; same electrical specs and package. | Suitable for industrial test equipment or non-safety-critical instrumentation where cost and lead time outweigh military pedigree. | Choose 1N4983US only for prototyping or commercial programs not subject to DoD sourcing mandates. |
Compared with JANTX1N4983DUS/TR, the JANTXV variant adds radiation lot acceptance and extended environmental screening but shares identical Zener voltage, impedance, and thermal performance; the commercial 1N4983US offers identical electrical behavior but lacks traceability, screening records, and guaranteed long-term availability.
Availability
JANTX1N4983DUS/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, defense radar bias supply, and nuclear instrumentation systems requiring stable component supply under ITAR-controlled logistics and long-lifecycle support.
Supply support for JANTX1N4983DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JANTX1N4983DUS/TR belongs to Microsemi's MIL-PRF-19500/356 qualified Zener diode family, engineered specifically for voltage regulation and transient suppression in mission-critical systems where failure is not an option.
FAQ
What is the Zener voltage tolerance of JANTX1N4983DUS/TR?
JANTX1N4983DUS/TR has a nominal Zener voltage of 110 V with ±1% tolerance, indicated by the "D" suffix per Microsemi's standard coding. This tolerance is verified at 25°C with 12 mA test current and applies across the full -65°C to +175°C operating range per MIL-PRF-19500/356 screening requirements.
Is JANTX1N4983DUS/TR compatible with lead-free soldering processes?
JANTX1N4983DUS/TR features Sn/Pb-finished copper end caps and is rated for reflow profiles up to 220°C peak. While it is not lead-free, its terminations comply with MIL-STD-202 Method 210 for solderability. For RoHS-compliant designs, consult Microchip's qualified lead-free alternatives such as the JANTX1N4983DUS/TR-LF, which requires separate qualification.
Does JANTX1N4983DUS/TR require derating above 140°C case temperature?
Yes - JANTX1N4983DUS/TR must be linearly derated from 5 W at TEC = 140°C to 0 W at 175°C. Derating slope is 111 mW/°C. This reflects its thermal resistance of 7°C/W junction-to-end-cap, and must be applied in thermal design calculations for chassis-mount or high-power-density PCB layouts.
What is the maximum reverse leakage current for JANTX1N4983DUS/TR at rated voltage?
At 83.6 V (76% of nominal 110 V), JANTX1N4983DUS/TR guarantees ≤2 μA reverse leakage current per the Electrical Characteristics table. This value is measured at 25°C and remains ≤5 μA across the full -65°C to +175°C range, supporting high-impedance bias network integrity.
Can JANTX1N4983DUS/TR be used in parallel for higher power dissipation?
No - JANTX1N4983DUS/TR is not characterized for parallel operation. Its positive temperature coefficient (+0.100 %/°C) causes current hogging under mismatched thermal conditions. For >5 W regulation, use a single higher-power Zener or implement active regulation with discrete pass elements instead of paralleling JANTX1N4983DUS/TR units.
JANTX1N4983DUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 110 V
- Tolerance:
- ±1%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 125 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 83.6 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTX1N4983DUS/TR FAQ
1.How can I place an order for JANTX1N4983DUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N4983DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that JANTX1N4983DUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N4983DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4983DUS/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N4983DUS/TR?
All JANTX1N4983DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4983DUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N4983DUS/TR part is unused and in its original packaging.
Return procedure for JANTX1N4983DUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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