Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANTX1N4983DUS/TR

Part No.:
JANTX1N4983DUS/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTX1N4983DUS/TR.pdf
Description:
DIODE ZENER 110V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,693

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANTX1N4983DUS/TR from Microsemi is a military-qualified, hermetically sealed surface-mount 5 W Zener diode with nominal Zener voltage of 110 V, ±1% tolerance (D suffix), and 12 mA test current. It delivers stable voltage regulation over -65°C to +175°C operating range and is used in high-reliability power supply reference and overvoltage protection circuits for aerospace avionics and defense electronics.

For engineers reviewing the JANTX1N4983DUS/TR datasheet, JANTX1N4983DUS/TR pinout, JANTX1N4983DUS/TR application, or JANTX1N4983DUS/TR equivalent, this part is selected for mission-critical voltage clamping where radiation hardness, ESD immunity, and long-term parametric stability under thermal stress are mandatory design requirements.

Technical Context

This device belongs to the MIL-PRF-19500/356 qualified 1N4954US–1N4996US series and uses voidless hermetically sealed hard-glass construction with internal Category I metallurgical bonds. Its Zener breakdown mechanism provides low dynamic impedance (125 Ω at 12 mA) and tight voltage regulation (ΔVZ ≤ 9.0 V between 10% and 50% of IZM).

It operates with 1.5 V forward voltage at 1.0 A, exhibits <2 μA reverse leakage at 83.6 V, and maintains temperature coefficient of +0.100 %/°C - enabling predictable drift compensation in precision analog references across extreme ambient conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Nominal Zener Voltage (VZ) 110 V ±1% at 12 mA - defines precise clamping threshold for overvoltage protection and reference generation.
Power Dissipation 5 W @ TEC = 140°C - supports continuous operation in high-temperature chassis-mounted applications.
Dynamic Impedance (ZZ) 125 Ω at IZT = 12 mA - ensures minimal output voltage variation under load transients.
Max Reverse Leakage (IR) <2 μA at 83.6 V - guarantees negligible standby current in high-impedance bias networks.
Temp Coefficient (αVZ) +0.100 %/°C - enables accurate thermal drift modeling for compensated reference designs.
Surge Current (IZSM) 1.2 A (8.3 ms square wave) - withstands transient energy surges without degradation.
Operating Temperature -65°C to +175°C - validated for use in uncooled military vehicle and satellite power systems.

Pinout & Package

Hermetically sealed "E" package (also designated D-5B), glass-body surface-mount device with copper end caps finished in Sn/Pb. Cathode indicated by band. No marking on body. Weight: 539 mg. Tape-and-reel compliant per EIA-481-B.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential node; carries full surge/continuous current during forward bias or clamp recovery.
Cathode Zener breakdown terminal Banded end; connected to higher-potential node; establishes regulated voltage reference at cathode-to-anode potential.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates moisture ingress and internal delamination risk over 20+ year field life in humid or vacuum environments.
Category I metallurgical bond Ensures mechanical integrity and thermal cycling reliability up to 1000 cycles between -65°C and +175°C.
Triple-layer passivation Prevents surface leakage paths and contamination-induced parameter shift during extended high-voltage bias.
Nonsensitive to ESD (MIL-STD-750 Method 1020) Withstands >15 kV HBM without parameter shift - simplifies handling and eliminates need for ESD-safe assembly protocols.
Inherent radiation hardness Qualified per MicroNote 050 for total ionizing dose (TID) >100 krad(Si) - suitable for low-earth orbit electronics.

Applications

Aerospace Power Conditioning Defense Radar Bias Supply

Use Scenario: Regulating auxiliary bias rails in satellite DC-DC converters exposed to thermal vacuum and radiation.

IC Role / Device Role / Timing Role: Zener reference and overvoltage clamp protecting FET gate drivers and op-amp supplies.

Use Value: Maintains 110 V reference stability within ±1.1 V over full temperature range and 100 krad(Si) TID exposure.

Use Scenario: Providing stable reference voltage for high-power RF amplifier bias sequencing in ground-based radar transmitters.

IC Role / Device Role / Timing Role: Precision shunt regulator establishing fixed bias point for GaN HEMT gate control circuitry.

Use Value: Delivers <2 μA leakage at 83.6 V and 125 Ω dynamic impedance to minimize bias drift during pulsed RF operation.

Tactical Vehicle Power Management Nuclear Instrumentation Systems

Use Scenario: Overvoltage protection for 28 V aircraft bus interfaces subjected to load dump transients up to 100 V.

IC Role / Device Role / Timing Role: Fast-response shunt clamp absorbing surge energy without latch-up or parametric shift.

Use Value: Withstands 1.2 A, 8.3 ms surge events while maintaining post-surge VZ within ±0.5% of initial value.

Use Scenario: High-stability voltage reference in neutron detector pulse-height analyzers requiring decades-long calibration retention.

IC Role / Device Role / Timing Role: Primary Zener reference element in ultra-low-drift analog front-end signal chains.

Use Value: Achieves <0.001%/1000 hrs long-term stability due to hermetic glass seal and Category I bond integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4983DUS/TR Higher screening level (JANTXV vs JANTX); tighter lot acceptance testing per MIL-PRF-19500/356. Required for Class H (spaceflight) and critical flight-safety systems where zero defect probability is mandated. Select JANTXV1N4983DUS/TR when full burn-in, radiation lot acceptance tests, and enhanced screening documentation are contractually required.
1N4983US (non-military) No MIL-spec qualification; commercial-grade screening; same electrical specs and package. Suitable for industrial test equipment or non-safety-critical instrumentation where cost and lead time outweigh military pedigree. Choose 1N4983US only for prototyping or commercial programs not subject to DoD sourcing mandates.

Compared with JANTX1N4983DUS/TR, the JANTXV variant adds radiation lot acceptance and extended environmental screening but shares identical Zener voltage, impedance, and thermal performance; the commercial 1N4983US offers identical electrical behavior but lacks traceability, screening records, and guaranteed long-term availability.

Availability

JANTX1N4983DUS/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, defense radar bias supply, and nuclear instrumentation systems requiring stable component supply under ITAR-controlled logistics and long-lifecycle support.

Supply support for JANTX1N4983DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The JANTX1N4983DUS/TR belongs to Microsemi's MIL-PRF-19500/356 qualified Zener diode family, engineered specifically for voltage regulation and transient suppression in mission-critical systems where failure is not an option.

FAQ

What is the Zener voltage tolerance of JANTX1N4983DUS/TR?

JANTX1N4983DUS/TR has a nominal Zener voltage of 110 V with ±1% tolerance, indicated by the "D" suffix per Microsemi's standard coding. This tolerance is verified at 25°C with 12 mA test current and applies across the full -65°C to +175°C operating range per MIL-PRF-19500/356 screening requirements.

Is JANTX1N4983DUS/TR compatible with lead-free soldering processes?

JANTX1N4983DUS/TR features Sn/Pb-finished copper end caps and is rated for reflow profiles up to 220°C peak. While it is not lead-free, its terminations comply with MIL-STD-202 Method 210 for solderability. For RoHS-compliant designs, consult Microchip's qualified lead-free alternatives such as the JANTX1N4983DUS/TR-LF, which requires separate qualification.

Does JANTX1N4983DUS/TR require derating above 140°C case temperature?

Yes - JANTX1N4983DUS/TR must be linearly derated from 5 W at TEC = 140°C to 0 W at 175°C. Derating slope is 111 mW/°C. This reflects its thermal resistance of 7°C/W junction-to-end-cap, and must be applied in thermal design calculations for chassis-mount or high-power-density PCB layouts.

What is the maximum reverse leakage current for JANTX1N4983DUS/TR at rated voltage?

At 83.6 V (76% of nominal 110 V), JANTX1N4983DUS/TR guarantees ≤2 μA reverse leakage current per the Electrical Characteristics table. This value is measured at 25°C and remains ≤5 μA across the full -65°C to +175°C range, supporting high-impedance bias network integrity.

Can JANTX1N4983DUS/TR be used in parallel for higher power dissipation?

No - JANTX1N4983DUS/TR is not characterized for parallel operation. Its positive temperature coefficient (+0.100 %/°C) causes current hogging under mismatched thermal conditions. For >5 W regulation, use a single higher-power Zener or implement active regulation with discrete pass elements instead of paralleling JANTX1N4983DUS/TR units.

JANTX1N4983DUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
110 V
Tolerance:
±1%
Power - Max:
5 W
Impedance (Max) (Zzt):
125 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 83.6 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTX1N4983DUS/TR FAQ

1.How can I place an order for JANTX1N4983DUS/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTX1N4983DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTX1N4983DUS/TR reliable?

The price and inventory of JANTX1N4983DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N4983DUS/TR is usually 5 days.

3.What payment methods are accepted for JANTX1N4983DUS/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N4983DUS/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTX1N4983DUS/TR?

JANTX1N4983DUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTX1N4983DUS/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTX1N4983DUS/TR?

For technical support, including JANTX1N4983DUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N4983DUS/TR requirements.

6.How does Aetrix verify that JANTX1N4983DUS/TR is sourced from the original manufacturer or authorized distributors?

All JANTX1N4983DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4983DUS/TR meets industry standards.

7.What is the process for return or replacement of JANTX1N4983DUS/TR?

All JANTX1N4983DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4983DUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTX1N4983DUS/TR part is unused and in its original packaging.

Return procedure for JANTX1N4983DUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANTX1N4983DUS/TR Tags

  • JANTX1N4983DUS/TR
  • JANTX1N4983DUS/TR PDF
  • JANTX1N4983DUS/TR Datasheet
  • JANTX1N4983DUS/TR Specifications
  • JANTX1N4983DUS/TR Images
  • Microchip Technology
  • Microchip Technology JANTX1N4983DUS/TR
  • Buy JANTX1N4983DUS/TR
  • JANTX1N4983DUS/TR Price
  • JANTX1N4983DUS/TR Distributor
  • JANTX1N4983DUS/TR Supplier
  • JANTX1N4983DUS/TR Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER